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11. 发明授权

US08047179B2 Engine unit and vehicle including the same 有权
标题翻译：发动机单元和车辆包括相同
公开(公告)号：US08047179B2
公开(公告)日：2011-11-01
申请号：US12248712
申请日：2008-10-09
申请人： Takayuki Yamada
发明人： Takayuki Yamada
IPC分类号： F02D9/10
CPC分类号： F02D9/1065 , F02B61/02 , F02D9/105 , F02D9/109 , F02D11/10 , F02M35/10032 , F02M35/116 , F02M35/162 , F02M69/044
摘要： An engine unit that has a throttle valve driving actuator securely fixed thereto, and in which the vibration caused on the actuator is small. The engine unit includes a V-type engine and a throttle body assembly. The throttle body assembly has first and second front and rear throttle bodies, an actuator, a transmission gear mechanism, and a casing that houses the actuator and the transmission gear mechanism. The casing has a first casing portion that is fixed to the first front and rear throttle bodies, and a second casing portion that faces the first casing portion in a width direction and is fixed to at least one of the second front and rear throttle bodies.
摘要翻译：具有可靠地固定在其上的节气门驱动致动器，并且致动器上产生的振动小的发动机单元。发动机单元包括V型发动机和节气门体组件。节气门体组件具有第一和第二前后节流体，致动器，传动齿轮机构和容纳致动器和传动齿轮机构的壳体。壳体具有固定到第一前后节流体的第一壳体部和与宽度方向相对的第一壳体部的第二壳体部，并且固定在第二前后节流体的至少一个上。

12. 发明授权

US07994036B2 Semiconductor device and fabrication method for the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07994036B2
公开(公告)日：2011-08-09
申请号：US12492605
申请日：2009-06-26
申请人： Riichirou Mitsuhashi , Takayuki Yamada
发明人： Riichirou Mitsuhashi , Takayuki Yamada
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： The semiconductor device includes a first transistor and a second transistor formed in a semiconductor substrate. The first transistor includes: a first gate insulating film formed on the semiconductor substrate; and a first gate electrode formed on the first gate insulating film. The second transistor includes: a second gate insulating film formed on the semiconductor substrate; and a second gate electrode formed on the second gate insulating film. The first gate insulating film includes a first insulating material with a first element diffused therein, the second gate insulating film includes the first insulating material, and the amount of the first element contained in the first gate insulating film is greater than the amount of the first element contained in the second gate insulating film.
摘要翻译：半导体器件包括形成在半导体衬底中的第一晶体管和第二晶体管。第一晶体管包括：形成在半导体衬底上的第一栅极绝缘膜; 以及形成在第一栅极绝缘膜上的第一栅电极。第二晶体管包括：形成在半导体衬底上的第二栅极绝缘膜; 以及形成在第二栅极绝缘膜上的第二栅电极。所述第一栅极绝缘膜包括第一绝缘材料，其中扩散有第一元素，所述第二栅极绝缘膜包括所述第一绝缘材料，并且所述第一栅极绝缘膜中包含的所述第一元素的量大于所述第一绝缘膜的量元件包含在第二栅极绝缘膜中。

13. 发明申请

US20110163388A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110163388A1
公开(公告)日：2011-07-07
申请号：US13052546
申请日：2011-03-21
申请人： Kentaro NAKANISHI , Hiromasa Fujimoto , Takayuki Yamada
发明人： Kentaro NAKANISHI , Hiromasa Fujimoto , Takayuki Yamada
IPC分类号： H01L27/092
CPC分类号： H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/66636 , H01L29/7843 , H01L29/7848
摘要： A semiconductor device includes an n-type MIS transistor and a p-type MIS transistor. The n-type MIS transistor includes a first gate electrode formed on a first active region and a first sidewall formed on the side face of the first gate electrode. The p-type MIS transistor includes a second gate electrode formed on a second active region, a second sidewall formed on the side face of the second gate electrode and strain layers formed in the second active region. The second sidewall has a smaller thickness than the first sidewall.
摘要翻译：半导体器件包括n型MIS晶体管和p型MIS晶体管。 n型MIS晶体管包括形成在第一有源区上的第一栅电极和形成在第一栅电极的侧面上的第一侧壁。 p型MIS晶体管包括形成在第二有源区上的第二栅电极，形成在第二栅电极的侧面上的第二侧壁和形成在第二有源区中的应变层。第二侧壁具有比第一侧壁更小的厚度。

14. 发明申请

US20100109370A1 FRONT VEHICLE BODY STRUCTURE 失效
标题翻译：前车身结构
公开(公告)号：US20100109370A1
公开(公告)日：2010-05-06
申请号：US12608385
申请日：2009-10-29
申请人： Takayuki Yamada
发明人： Takayuki Yamada
IPC分类号： B62D25/14
CPC分类号： B62D25/14 , B62D25/2018
摘要： Dashboard panel, partitioning between an engine compartment and a passenger compartment, includes a reinforcing frame structure or connection member that extends, through the interior space of the dashboard panel, to linearly interconnect a horizontal rear end portion of each of left and right front side frames and a front end portion of a corresponding one of left and right side sills.
摘要翻译：仪表板面板，在发动机舱和乘客舱之间的分隔包括加强框架结构或连接构件，该加强框架结构或连接构件通过仪表板的内部空间延伸，以使左右前侧框架中的每一个的水平后端部线性互连以及相应的左右两侧梁的前端部分。

15. 发明授权

US07709911B2 Semiconductor device having silicide transistors and non-silicide transistors formed on the same substrate and method for fabricating the same 有权
标题翻译：具有形成在同一衬底上的硅化物晶体管和非硅化物晶体管的半导体器件及其制造方法
公开(公告)号：US07709911B2
公开(公告)日：2010-05-04
申请号：US11522996
申请日：2006-09-19
申请人： Masayuki Kamei , Isao Miyanaga , Takayuki Yamada
发明人： Masayuki Kamei , Isao Miyanaga , Takayuki Yamada
IPC分类号： H01L29/78
CPC分类号： H01L21/823425 , H01L21/823418 , H01L21/823443
摘要： A semiconductor device includes a first MIS transistor of a non-salicide structure and a second MIS transistor of a salicide structure which are both formed on a substrate of silicon. The first MIS transistor includes a first gate electrode of silicon, first sidewalls, a first source and drain, and plasma reaction films grown in a plasma atmosphere to cover the top surfaces of the first gate electrode and first source and drain, wherein the plasma reaction film prevents silicide formation on the first MIS transistor.
摘要翻译：半导体器件包括非硅化物结构的第一MIS晶体管和硅化物结构的第二MIS晶体管，二者都形成在硅衬底上。第一MIS晶体管包括硅的第一栅电极，第一侧壁，第一源极和漏极以及在等离子体气氛中生长以覆盖第一栅电极和第一源极和漏极的顶表面的等离子体反应膜，其中等离子体反应膜防止在第一MIS晶体管上形成硅化物。

16. 发明授权

US07708950B2 Microfluidic device 失效
标题翻译：微流控装置
公开(公告)号：US07708950B2
公开(公告)日：2010-05-04
申请号：US11206100
申请日：2005-08-18
申请人： Takayuki Yamada , Kazuaki Tabata , Mutsuya Takahashi , Yoshihisa Yamazaki
发明人： Takayuki Yamada , Kazuaki Tabata , Mutsuya Takahashi , Yoshihisa Yamazaki
IPC分类号： B01L3/00 , B01L3/02 , B01L99/00 , B01J19/00 , G01N1/10
CPC分类号： F28F3/12 , B01F5/0646 , B01F5/0647 , B01F13/0059 , B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00826 , B01J2219/00828 , B01J2219/00831 , B01J2219/0086 , B01J2219/00873 , B01J2219/00889 , B01L3/5027 , B01L3/502707 , B01L7/00 , B01L2300/0816 , B01L2300/0867 , B01L2300/0874 , B01L2300/0887 , B01L2300/185 , B01L2300/1883 , F28F2260/02 , Y10T436/2575
摘要： A microfluidic device includes a processing layer and a temperature control layer. The processing layer applies a predetermined process to a subject fluid. The temperature control layer is disposed adjacent to the processing layer to give a predetermined temperature environment to the processing layer.
摘要翻译：微流体装置包括处理层和温度控制层。处理层对目标流体施加预定的处理。温度控制层设置成与处理层相邻，以给予处理层预定的温度环境。

17. 发明申请

US20080174150A1 VEHICLE BODY FRAME 失效
标题翻译：车身身体
公开(公告)号：US20080174150A1
公开(公告)日：2008-07-24
申请号：US12015011
申请日：2008-01-16
申请人： Takayuki Yamada
发明人： Takayuki Yamada
IPC分类号： B62D21/00
CPC分类号： B62D21/152 , B62D27/065 , B62D29/008
摘要： Vehicle body frame includes a main frame section that is made of light metal and extends in a band shape from a front end portion to a rear end portion of the vehicle body frame to thereby form a compression wall portion, and a sub-frame section that is made of steel and fixedly mounted along the band-shaped main frame section. The sub-frame section forms a hollow structure in conjunction with the main frame section and forms a tension wall portion. The main frame section has a greater thickness than the sub-frame section.
摘要翻译：车身框架包括由轻金属制成的主框架部分，并且从车身框架的前端部分到后端部分呈带状延伸，从而形成压缩壁部分;以及子框架部分，由钢制成，并沿着带状主框架部分固定安装。副框架部分与主框架部分结合形成中空结构并形成张力壁部分。主框架部分具有比子框架部分更大的厚度。

18. 发明授权

US07300718B2 Electrolyte-electrode joined assembly and method for producing the same 有权
标题翻译：电解电极接合组件及其制造方法
公开(公告)号：US07300718B2
公开(公告)日：2007-11-27
申请号：US10982300
申请日：2004-11-05
申请人： Takayuki Yamada , Naoki Kamide , Kazuyuki Yamada
发明人： Takayuki Yamada , Naoki Kamide , Kazuyuki Yamada
IPC分类号： H01M8/02 , H01M8/10 , H01M4/86
CPC分类号： H01M8/1213 , C04B35/486 , C04B35/488 , C04B35/64 , C04B2235/3225 , C04B2235/3279 , C04B2235/405 , C04B2235/6025 , C04B2235/652 , C04B2235/661 , C04B2235/77 , C04B2235/80 , H01M4/8621 , H01M4/8657 , H01M4/8885 , H01M8/0297 , H01M2008/1293 , Y02P70/56
摘要： A flattening layer is provided between an anode and a solid electrolyte. The flattening layer has a porosity which is set to be smaller than that of the anode. Large diameter pores, which are open at an end surface of the anode on a side facing the solid electrolyte, are filled with the flattening layer, and projections, which bulge out of the end surface, are buried therewith to flatten the projections. Therefore, when the solid electrolyte is formed on the flattening layer, the solid electrolyte is prevented from any depressions and bulges on which stress is concentrated.
摘要翻译：在阳极和固体电解质之间设置有平坦化层。平坦化层的孔隙率设定为小于阳极的孔隙率。在面向固体电解质的一侧在阳极的端面处开口的大直径的孔填充有平坦化层，并且从端表面凸出的突起被埋入其中以使突起平坦化。因此，当在平坦化层上形成固体电解质时，可防止固体电解质发生压力集中的任何凹陷和凸起。

19. 发明申请

US20070007617A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070007617A1
公开(公告)日：2007-01-11
申请号：US11480909
申请日：2006-07-06
申请人： Masayuki Nakamura , Satoshi Ishikura , Takayuki Yamada
发明人： Masayuki Nakamura , Satoshi Ishikura , Takayuki Yamada
IPC分类号： H01L29/00 , G11C11/00
CPC分类号： H01L27/11
摘要： An isolation insulating film is formed so that an active region of a first access transistor and a substrate contact region can be integrated with each other in a plan view. A dummy gate electrode is formed on the semiconductor substrate between the active region of the first access transistor and the substrate contact region. The dummy gate electrode is electrically connected to a P-type impurity region of the substrate contact region.
摘要翻译：形成隔离绝缘膜，使得第一存取晶体管和基板接触区域的有源区域可以在平面图中彼此一体化。在第一存取晶体管的有源区和衬底接触区之间的半导体衬底上形成伪栅电极。虚拟栅电极与衬底接触区域的P型杂质区电连接。

20. 发明申请

US20060280961A1 Laminated structure, donor substrate, and method for fabricating laminated structure 有权
标题翻译：叠层结构，供体基板和层叠结构的制造方法
公开(公告)号：US20060280961A1
公开(公告)日：2006-12-14
申请号：US11314359
申请日：2005-12-22
申请人： Takayuki Yamada , Kazuaki Tabata
发明人： Takayuki Yamada , Kazuaki Tabata
IPC分类号： C25D5/10 , B32B9/00 , B32B3/00
CPC分类号： C25D5/12 , B32B3/085 , B32B15/00 , B32B15/04 , B32B15/043 , B32B15/20 , B32B2255/06 , B32B2255/205 , B32B2307/202 , B32B2457/00 , B81C99/008 , B81C99/009 , B81C2201/0191 , B81C2201/0197 , C23C26/00 , C23C28/021 , C23C28/023 , C25D5/022 , C25D5/16 , Y10T29/49128 , Y10T29/49146 , Y10T29/49155 , Y10T29/49169 , Y10T29/49172 , Y10T428/12493 , Y10T428/12882 , Y10T428/24917 , Y10T428/24983
摘要： A laminated structure includes: a plurality of first electroconductive films each having a prescribed hardness; and a plurality of second electroconductive films each having a hardness that is lower than the prescribed hardness. The first and second electroconductive films are laminated alternately.
摘要翻译：叠层结构包括：具有规定硬度的多个第一导电膜; 以及多个第二导电膜，其各自具有低于规定硬度的硬度。第一和第二导电膜交替层叠。

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