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11. 发明申请

US20060121700A1 Method of forming a gate insulator in group III-V nitride semiconductor devices 有权
标题翻译：在III-V族氮化物半导体器件中形成栅极绝缘体的方法
公开(公告)号：US20060121700A1
公开(公告)日：2006-06-08
申请号：US11005193
申请日：2004-12-06
申请人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
IPC分类号： H01L21/84 , H01L21/20
CPC分类号： H01L21/02241 , H01L21/02258 , H01L21/02337 , H01L21/3143 , H01L21/31679 , H01L29/78681
摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.
摘要翻译：在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓并进行快速热退火处理。光辅助电化学方法在约5.5和7.5之间的pH下使用包括缓冲CH 3 COOH的电解质浴。快速热退火工艺在O 2 O 2环境中在约500℃至800℃的温度下进行。

12. 发明申请

US20060014368A1 METHOD FOR MANUFACTURING GALLIUM NITRIDE BASED TRANSPARENT CONDUCTIVE OXIDIZED FILM OHMIC ELECTRODES 有权
标题翻译：用于制造基于氮化镓的透明导电氧化膜电极的方法
公开(公告)号：US20060014368A1
公开(公告)日：2006-01-19
申请号：US10892180
申请日：2004-07-16
申请人： Lung-Han Peng , Han-Ming Wu , Sung-Li Wang , Chia-Wei Chang , Chin-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Sung-Li Wang , Chia-Wei Chang , Chin-Yi Lin
IPC分类号： H01L21/28
CPC分类号： H01L33/42 , H01L33/32
摘要： A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.
摘要翻译：一种制造氮化镓基透明导电氧化膜欧姆电极的方法包括在GaN层上形成透明导电膜，通过离子在GaN层的表面上的透明导电膜上形成具有相反电特性的透明导电异质结扩散工艺，并在后续制造操作中在布线工艺的透明导电异质结表面上铺设金属厚膜。因此，通过离子扩散过程中的电子和空穴隧穿效应，可以改善异质结的费米能级以形成欧姆接触电极。

13. 发明授权

US06926770B2 Method of fabricating two-dimensional ferroelectric nonlinear crystals with periodically inverted domains 有权
标题翻译：制造具有周期性反转域的二维铁电非线性晶体的方法
公开(公告)号：US06926770B2
公开(公告)日：2005-08-09
申请号：US10434233
申请日：2003-05-09
申请人： Lung-Han Peng , Way-Seen Wang , Shu-Mei Tsan , Yi-Chun Shih , Yung-Chang Zhang , Chao-Ching Hsu
发明人： Lung-Han Peng , Way-Seen Wang , Shu-Mei Tsan , Yi-Chun Shih , Yung-Chang Zhang , Chao-Ching Hsu
IPC分类号： G02F1/37 , C30B33/00 , G02F1/355 , C30B33/06
CPC分类号： G02F1/3558 , C30B29/30 , C30B33/00
摘要： The present invention relates to a method to control the nucleation and transverse motion of 180° inverted domains in ferroelectric nonlinear crystals. It includes a process composing of a high temperature oxidation of the first metal layer and a pulsed field poling of the second electrodes. The main object of present invention is to provide domain inversion of ferroelectric nonlinear crystals with field control the nucleation and transverse motion of inverted domains and two-dimension nonlinear photonic crystals for time-domain multiple-wave simultaneous lasers and space filter function. Another object of present invention is to provide space-charge effect for screened edge field beneath the metal electrode, The other object of present invention is to provide the constraint of inverted domain nucleation in the oxidized electrode for arbitrarily geometrical form of 2D ferroelectric lattice structure.
摘要翻译：本发明涉及一种控制铁电非线性晶体中180°倒置畴的成核和横向运动的方法。它包括构成第一金属层的高温氧化和第二电极的脉冲场极化的工艺。本发明的主要目的是提供铁电非线性晶体的域反转，其中场控制反向域的成核和横向运动以及用于时域多波同时激光器和空间滤波器功能的二维非线性光子晶体。本发明的另一个目的是为金属电极下方的筛选边缘场提供空间电荷效应。本发明的另一个目的是提供二氧化铁电晶格结构的任意几何形式的氧化电极中的反向晶核成核的约束。

14. 发明申请

US20150090999A1 WHITE LED 有权
标题翻译：白色LED
公开(公告)号：US20150090999A1
公开(公告)日：2015-04-02
申请号：US14146097
申请日：2014-01-02
申请人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
发明人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
IPC分类号： H01L33/08 , H01L33/32 , H01L33/34 , H01L33/28
CPC分类号： H01L33/08 , H01L33/26 , H01L33/32
摘要： A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.
摘要翻译：提供白色LED。白色LED包括P型层，隧道结构，N型层，N型电极和P型电极。隧道结构设置在P型层上。隧道结构包括第一阻挡层，有源层和第二阻挡层。第一阻挡层包括第一金属氧化物层。有源层包括第二金属氧化物层。第二阻挡层包括第三金属氧化物层。 N型层设置在隧道结构之上。 N型电极和P型电极分别与N型层和P型层接触。第二金属氧化物层的能隙低于第一金属氧化物层的能隙，并且低于第三金属氧化物层的能隙。

15. 发明授权

US08481353B2 Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation 有权
标题翻译：通过选择性光增强湿氧化从生长衬底分离氮化膜的方法
公开(公告)号：US08481353B2
公开(公告)日：2013-07-09
申请号：US13086787
申请日：2011-04-14
申请人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
发明人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/268 , H01L33/32
摘要： Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.
摘要翻译：本公开的各种实施例涉及通过选择性光增强湿氧化从生长衬底分离氮化物膜。在一个方面，一种方法可以通过选择性光增强湿氧化将与第一衬底结构结合的III族氮化物结构的一部分转变为III氧化物层。该方法还可以将第一衬底结构与III族氮化物结构分开。

16. 发明申请

US20120264247A1 Method of Separating Nitride Films from the Growth Substrates by Selective Photo-Enhanced Wet Oxidation 有权
标题翻译：通过选择性光增强湿氧化从生长底物分离氮化物膜的方法
公开(公告)号：US20120264247A1
公开(公告)日：2012-10-18
申请号：US13086787
申请日：2011-04-14
申请人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
发明人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
IPC分类号： H01L33/32 , H01L21/268
CPC分类号： H01L33/0079 , H01L21/268 , H01L33/32
摘要： Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.
摘要翻译：本公开的各种实施方案涉及通过选择性光增强湿氧化从生长衬底分离氮化物膜。在一个方面，一种方法可以通过选择性光增强湿氧化将与第一衬底结构结合的III族氮化物结构的一部分转变为III氧化物层。该方法还可以将第一衬底结构与III族氮化物结构分开。

17. 发明授权

US07977254B2 Method of forming a gate insulator in group III-V nitride semiconductor devices 有权
标题翻译：在III-V族氮化物半导体器件中形成栅极绝缘体的方法
公开(公告)号：US07977254B2
公开(公告)日：2011-07-12
申请号：US12931361
申请日：2007-06-27
申请人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
IPC分类号： H01L21/31
CPC分类号： H01L21/02241 , H01L21/02258 , H01L21/02337 , H01L21/3143 , H01L21/31679 , H01L29/78681
摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.
摘要翻译：在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓并进行快速热退火处理。光辅助电化学方法使用包含缓冲CH 3 COOH的电解质浴，pH在约5.5和7.5之间。快速热退火过程在氧气环境中在约500℃至800℃之间的温度下进行。

18. 发明授权

US07884345B2 Phase-change material, memory unit and method for electrically storing/reading data 有权
标题翻译：相变材料，存储单元和用于电存储/读取数据的方法
公开(公告)号：US07884345B2
公开(公告)日：2011-02-08
申请号：US12182644
申请日：2008-07-30
申请人： Lung-Han Peng , Sung-Li Wang , Meng-Kuei Hsieh , Chien-Yu Chen
发明人： Lung-Han Peng , Sung-Li Wang , Meng-Kuei Hsieh , Chien-Yu Chen
IPC分类号： H01L29/04
CPC分类号： C23C14/0676 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/145 , H01L45/1625 , Y10S438/90
摘要： A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.
摘要翻译：提供了相变材料和使用该相变材料的存储单元。相变材料为单晶状态，包括金属氧化物或氮氧化物的化合物，其中金属为选自铟，镓和锗的至少一种。存储单元包括基板; 至少形成在所述基板上的第一接触电极; 介电层，其设置在所述基板上，并且形成有用于要形成在其中的所述相变材料层的开口; 以及设置在电介质层上的至少第二接触电极。由于相变材料处于单晶状态，在高电阻状态和低电阻状态之间存在很大的差异，所以使用相变材料的存储器单元可以通过脉冲电压快速获得相变特性，并避免任何不完全复位具有低临界功率。

19. 发明授权

US08587862B2 Second-harmonic generation nonliner frenquency converter 有权
标题翻译：二次谐波发生非线性频率转换器
公开(公告)号：US08587862B2
公开(公告)日：2013-11-19
申请号：US13218462
申请日：2011-08-26
申请人： Jiun-Wei Liou , Jun-Ying Li , Chih-Ming Lai , Chern-Lin Chen , Way-Seen Wang , Lung-Han Peng
发明人： Jiun-Wei Liou , Jun-Ying Li , Chih-Ming Lai , Chern-Lin Chen , Way-Seen Wang , Lung-Han Peng
IPC分类号： G02F1/37 , G02F1/35
CPC分类号： G02F1/37 , G02F1/3558 , G02F1/3775
摘要： A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.
摘要翻译：二次谐波发生非线性频率转换器包括非线性光学晶体。非线性光学晶体包括多个部分。这些部分依次相互连接，每个部分的阶段与其他部分不同。每个相包括正域和负域。每个部分包括多个准相位匹配结构。准相位匹配结构依次相互连接，在一个部分中具有相同的相位。

20. 发明授权

US08409892B2 Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates 有权
标题翻译：选择性光增强湿法氧化氮化层再生长在衬底上的方法
公开(公告)号：US08409892B2
公开(公告)日：2013-04-02
申请号：US13086663
申请日：2011-04-14
申请人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
发明人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/02639 , H01L33/007 , H01L33/06
摘要： Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
摘要翻译：本公开的各种实施方案涉及对衬底上的氮化物层再生长的选择性光增强湿氧化。一方面，一种方法可以包括：在衬底的第一表面上形成具有第一低带隙能的第一III族氮化物层; 在所述第一III族氮化物层上形成具有第一高带隙能的第二III族氮化物层; 通过光增强湿氧化将第一III-氮化物层的部分转变成多个III-氧化物条; 在所述III氧化物条之间的所述第二III族氮化物层上形成具有第二低带隙能量的多个III族氮化物纳米线; 并且通过选择性光增强氧化将至少一些III族氮化物纳米线选择性地转化为III族氧化物纳米线。

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