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11. 发明申请

US20100141593A1 Stylus pen and flat panel display apparatus including the same 有权
标题翻译：触笔和包括它的平板显示装置
公开(公告)号：US20100141593A1
公开(公告)日：2010-06-10
申请号：US12585031
申请日：2009-09-01
申请人： Sung-Un Park , Tae-Jin Kim , Joo-Hyeon Jeong
发明人： Sung-Un Park , Tae-Jin Kim , Joo-Hyeon Jeong
IPC分类号： G06F3/041 , G06F3/033
CPC分类号： G06F3/0421 , G06F3/03545
摘要： A stylus pen includes a body portion, and an end portion on the body portion, the end portion including a reflecting unit and adapted to contact a touch screen. The reflecting unit is adapted to reflect light toward a display apparatus including the stylus pen, so light receiving accuracy of a photosensor in the display apparatus is increased.
摘要翻译：触控笔包括主体部分和主体部分上的端部，所述端部包括反射单元并且适于接触触摸屏。反射单元适于将光反射到包括触控笔的显示装置，因此显示装置中的光传感器的光接收精度提高。

12. 发明授权

US07589042B2 Arylphenoxy catalyst system for producing ethylene homopolymer or copolymers of ethylene and α-olefins 有权
标题翻译：用于生产乙烯均聚物或乙烯和α-烯烃共聚物的芳基苯氧基催化剂体系
公开(公告)号：US07589042B2
公开(公告)日：2009-09-15
申请号：US11671794
申请日：2007-02-06
申请人： Tae-Woo Woo , Myung-Ahn Ok , Jong-sok Hahn , Mal-Ou Lee , Sang-Ook Kang , Sung-bo Ko , Tae-Jin Kim , Sung Kun Kim
发明人： Tae-Woo Woo , Myung-Ahn Ok , Jong-sok Hahn , Mal-Ou Lee , Sang-Ook Kang , Sung-bo Ko , Tae-Jin Kim , Sung Kun Kim
IPC分类号： C08F4/64 , C08F4/6592 , C08F210/02 , B01J31/22
CPC分类号： C07F17/00 , C08F4/65908 , C08F4/65912 , C08F10/00 , C08F110/02 , C08F210/16 , C08F2420/03 , C08F4/6592 , C08F2500/12 , C08F210/14
摘要： Disclosed is an arylphenoxy catalyst system for producing an ethylene homopolymer or copolymers of ethylene and α-olefins, and a method of producing an ethylene homopolymer or copolymers of ethylene and α-olefins having a high molecular weight under a high temperature solution polymerization condition using the same. The catalyst system includes a group 4 arylphenoxy-based transition metal catalyst and an aluminoxane cocatalyst or a boron compound cocatalyst. In the transition metal catalyst, a cyclopentadienyl derivative and arylphenoxide as fixed ligands are located around the group 4 transition metal, arylphenoxide is substituted with at least one aryl derivative and is located at the ortho position thereof, and the ligands are not crosslinked to each other. The catalyst includes non-toxic raw materials, synthesis of the catalyst is economical, and thermal stability of the catalyst is excellent. It is useful for producing an ethylene homopolymer or copolymers of ethylene and α-olefins having various physical properties in commercial polymerization processes.
摘要翻译：公开了用于生产乙烯均聚物或乙烯与α-烯烃的共聚物的芳基苯氧基催化剂体系，以及在高温溶液聚合条件下使用高温溶液聚合条件制备乙烯均聚物或乙烯与α-烯烃的共聚物的方法，相同。该催化剂体系包括基团4芳基苯氧基基过渡金属催化剂和铝氧烷助催化剂或硼化合物助催化剂。在过渡金属催化剂中，作为固定配体的环戊二烯基衍生物和芳基苯氧基位于第4族过渡金属周围，芳基酚被至少一个芳基衍生物取代并位于其邻位，并且配体彼此不交联。催化剂包括无毒原料，催化剂的合成是经济的，催化剂的热稳定性优异。在商业聚合方法中生产具有各种物理性质的乙烯均聚物或乙烯和α-烯烃的共聚物是有用的。

13. 发明申请

US20080315914A1 Data transmission device and method thereof 审中-公开
标题翻译：数据传输装置及其方法
公开(公告)号：US20080315914A1
公开(公告)日：2008-12-25
申请号：US12149885
申请日：2008-05-09
申请人： Jang-Jin Nam , Tae-Jin Kim
发明人： Jang-Jin Nam , Tae-Jin Kim
IPC分类号： H03K19/003
CPC分类号： H04L25/0278
摘要： A data transmission device may include a transmission chip, a plurality of reception chips and/or a pair of transmission lines. The transmission chip may transmit data and the reception chips may receive the data from the transmission chip. One of the plurality of reception chips may provide a corresponding terminal resistance when it receives the data. The transmission lines may be coupled between the transmission chip and the reception chips, and the transmission lines may have a daisy-chain configuration. Therefore, a data transmission device may provide a fixed terminal resistance in impedance matching and increase a transmission speed.
摘要翻译：数据传输设备可以包括传输芯片，多个接收芯片和/或一对传输线。传输芯片可以发送数据，并且接收芯片可以从传输芯片接收数据。多个接收芯片中的一个可以在接收到数据时提供对应的终端电阻。传输线可以耦合在传输芯片和接收芯片之间，并且传输线可以具有菊花链配置。因此，数据传输装置可以提供阻抗匹配中的固定终端电阻并且增加传输速度。

14. 发明申请

US20080267932A1 Lactobacillus Rhamnosus with Body-Fat Reducing Activity and the Foods Containing Them 审中-公开
标题翻译：具有体脂肪减少活性的鼠李糖乳杆菌和含有它们的食物
公开(公告)号：US20080267932A1
公开(公告)日：2008-10-30
申请号：US11659368
申请日：2005-06-30
申请人： Yeon-Hee Lee , Kyung-Soo Paek , Kenny Sohn , Tae-Jin Kim , Jee-Hoon Koh , Bum-Suk Park
发明人： Yeon-Hee Lee , Kyung-Soo Paek , Kenny Sohn , Tae-Jin Kim , Jee-Hoon Koh , Bum-Suk Park
IPC分类号： A61K45/00 , C12N1/20 , A23C9/123 , A61P3/04
CPC分类号： C12R1/225 , A23L33/135 , A23L33/30 , A61K35/747
摘要： The present invention relates to Lactobacillus strain with a body-fat reducing activity and provides Lactobacillus rhamnosus Strain PL60 KCCM-10654P. The strain of the invention can be directly used as body-fat reducing functional foods, or can be used as additives of body-fat reducing functional foods or a ferment starter strain of body-fat reducing functional fermented foods. Body-fat inhibiting materials that the strain of the present invention produce can be isolated to be used. In addition, in case that fermented foods are produced using the strain the invention provides conditions capable of having a maximal body-fat reducing effect.
摘要翻译：本发明涉及具有体脂肪还原活性的乳杆菌菌株，并提供鼠李糖乳杆菌菌株PL60KCCM-10654P。本发明的菌株可以直接用作体脂肪减少功能性食品，也可以作为体脂肪减少功能性食品的添加剂或减肥功能发酵食品的发酵发酵剂。可以将本发明的菌株产生的体脂抑制物质分离使用。此外，在使用该菌株生产发酵食品的情况下，本发明提供能够具有最大减少身体 - 脂肪的效果的条件。

15. 发明申请

US20070135297A1 ARYLPHENOXY CATALYST SYSTEM FOR PRODUCING ETHYLENE HOMOPOLYMER OR COPOLYMERS OF ETHYLENE AND a-OLEFINS 有权
标题翻译：用于生产乙烯和乙烯的乙烯共聚物或共聚物的芳氧基催化剂体系
公开(公告)号：US20070135297A1
公开(公告)日：2007-06-14
申请号：US11671794
申请日：2007-02-06
申请人： Tae-Woo Woo , Myung-Ahn Ok , Jong-Sok Hahn , Mal-Ou Lee , Sang-Ook Kang , Sung-Bo Ko , Tae-Jin Kim , Sung-Kwan Kim
发明人： Tae-Woo Woo , Myung-Ahn Ok , Jong-Sok Hahn , Mal-Ou Lee , Sang-Ook Kang , Sung-Bo Ko , Tae-Jin Kim , Sung-Kwan Kim
IPC分类号： B01J31/00 , C08F4/44
CPC分类号： C07F17/00 , C08F4/65908 , C08F4/65912 , C08F10/00 , C08F110/02 , C08F210/16 , C08F2420/03 , C08F4/6592 , C08F2500/12 , C08F210/14
摘要： Disclosed is an arylphenoxy catalyst system for producing an ethylene homopolymer or copolymers of ethylene and α-olefins, and a method of producing an ethylene homopolymer or copolymers of ethylene and α-olefins having a high molecular weight under a high temperature solution polymerization condition using the same. The catalyst system includes a group 4 arylphenoxy-based transition metal catalyst and an aluminoxane cocatalyst or a boron compound cocatalyst. In the transition metal catalyst, a cyclopentadiene derivative and arylphenoxide as fixed ligands are located around the group 4 transition metal, arylphenoxide is substituted with at least one aryl derivative and is located at the ortho position thereof, and the ligands are not crosslinked to each other. The catalyst includes non-toxic raw materials, synthesis of the catalyst is economical, and thermal stability of the catalyst is excellent. It is useful for producing an ethylene homopolymer or copolymers of ethylene and α-olefins having various physical properties in commercial polymerization processes.
摘要翻译：公开了用于生产乙烯均聚物或乙烯与α-烯烃的共聚物的芳基苯氧基催化剂体系，以及在高温溶液聚合条件下使用高温溶液聚合条件制备乙烯均聚物或乙烯与α-烯烃的共聚物的方法，相同。该催化剂体系包括基团4芳基苯氧基基过渡金属催化剂和铝氧烷助催化剂或硼化合物助催化剂。在过渡金属催化剂中，作为固定配体的环戊二烯衍生物和芳基苯氧基位于第4族过渡金属周围，芳基酚被至少一个芳基衍生物取代，位于其邻位，并且配体彼此不交联。催化剂包括无毒原料，催化剂的合成是经济的，催化剂的热稳定性优异。在商业聚合方法中生产具有各种物理性质的乙烯均聚物或乙烯和α-烯烃的共聚物是有用的。

16. 发明授权

US5838990A Circuit in a semiconductor memory for programming operation modes of the memory 失效
标题翻译：用于存储器的编程操作模式的半导体存储器中的电路
公开(公告)号：US5838990A
公开(公告)日：1998-11-17
申请号：US905562
申请日：1997-08-04
申请人： Churoo Park , Hyun-Soon Jang , Chull-Soo Kim , Myung-Ho Kim , Seung-Hun Lee , Si-Yeol Lee , Ho-Cheol Lee , Tae-Jin Kim , Yun-Ho Choi
发明人： Churoo Park , Hyun-Soon Jang , Chull-Soo Kim , Myung-Ho Kim , Seung-Hun Lee , Si-Yeol Lee , Ho-Cheol Lee , Tae-Jin Kim , Yun-Ho Choi
IPC分类号： G11C11/401 , G11C7/00 , G11C7/10 , G11C11/403 , G11C11/406 , G11C11/407 , G11C11/4076 , G11C11/408 , G11C11/409 , G06F9/00 , G06F13/16
CPC分类号： G11C7/1018 , G11C11/406 , G11C11/40618 , G11C11/4076 , G11C11/408 , G11C11/4082 , G11C11/4087 , G11C7/1045 , G11C7/1072 , G11C7/222 , G11C7/225 , G11C2207/2281
摘要： A synchronous dynamic random access memory capable of accessing data in a memory cell array therein in synchronism with a system clock from an external system such as a central processing unit (CPU). The synchronous DRAM receives an external clock and includes a plurality of memory banks each including a plurality of memory cells and operable in either an active cycle or a precharge cycle, a circuit for receiving a row address strobe signal and latching a logic level of the row address strobe signal in response to the clock, an address input circuit for receiving an externally generated address selecting one of the memory banks, and a circuit for receiving the latched logic level and the address from the address input circuit and for outputting an activation signal to the memory bank selected by the address and an inactivation signals to unselected memory banks when the latched logic level is a first logic level, so that the selected memory bank responsive to the activation signal operates in the active cycle while the unselected memory banks responsive to the inactivation signals operate in the precharge cycle.
摘要翻译：能够与来自诸如中央处理单元（CPU）的外部系统的系统时钟同步地访问其中的存储器单元阵列中的数据的同步动态随机存取存储器。同步DRAM接收外部时钟并且包括多个存储器组，每个存储器组包括多个存储器单元并且可以在有效周期或预充电周期中操作，用于接收行地址选通信号并锁存该行的逻辑电平的电路响应于时钟的地址选通信号，用于接收选择存储体之一的外部产生的地址的地址输入电路，以及用于从地址输入电路接收锁存的逻辑电平和地址的电路，并将激活信号输出到当锁存的逻辑电平为第一逻辑电平时，由地址选择的存储器组和对未选择的存储体的失活信号，使得响应于激活信号的所选择的存储器组在活动周期中工作，而未选定的存储器组响应于灭活信号在预充电循环中工作。

17. 发明授权

US5835956A Synchronous dram having a plurality of latency modes 失效
标题翻译：具有多个等待时间模式的同步电话
公开(公告)号：US5835956A
公开(公告)日：1998-11-10
申请号：US822148
申请日：1997-03-17
申请人： Churoo Park , Hyun-Soon Jang , Chull-Soo Kim , Myung-Ho Kim , Seung-Hun Lee , Si-Yeol Lee , Ho-Cheol Lee , Tae-Jin Kim , Yun-Ho Choi
发明人： Churoo Park , Hyun-Soon Jang , Chull-Soo Kim , Myung-Ho Kim , Seung-Hun Lee , Si-Yeol Lee , Ho-Cheol Lee , Tae-Jin Kim , Yun-Ho Choi
IPC分类号： G11C11/401 , G11C7/00 , G11C7/10 , G11C11/403 , G11C11/406 , G11C11/407 , G11C11/4076 , G11C11/408 , G11C11/409 , G06F13/16
CPC分类号： G11C7/1018 , G11C11/406 , G11C11/40618 , G11C11/4076 , G11C11/408 , G11C11/4082 , G11C11/4087 , G11C7/1045 , G11C7/1072 , G11C7/222 , G11C7/225 , G11C2207/2281
摘要： A synchronous dynamic random access memory capable of accessing data in a memory cell array therein in synchronism with a system clock from an external system such as a central processing unit (CPU). The synchronous DRAM receives an external clock and includes a plurality of memory banks each including a plurality of memory cells and operable in either an active cycle or a precharge cycle, a circuit for receiving a row address strobe signal and latching a logic level of the row address strobe signal in response to the clock, an address input circuit for receiving an externally generated address selecting one of the memory banks, and a circuit for receiving the latched logic level and the address from the address input circuit and for outputting an activation signal to the memory bank selected by the address and an inactivation signals to unselected memory banks when the latched logic level is a first logic level, so that the selected memory bank responsive to the activation signal operates in the active cycle while the unselected memory banks responsive to the inactivation signals operate in the precharge cycle.
摘要翻译：能够与来自诸如中央处理单元（CPU）的外部系统的系统时钟同步地访问其中的存储器单元阵列中的数据的同步动态随机存取存储器。同步DRAM接收外部时钟并且包括多个存储器组，每个存储器组包括多个存储器单元并且可以在有效周期或预充电周期中操作，用于接收行地址选通信号并锁存该行的逻辑电平的电路响应于时钟的地址选通信号，用于接收选择存储体之一的外部产生的地址的地址输入电路，以及用于从地址输入电路接收锁存的逻辑电平和地址的电路，并将激活信号输出到当锁存的逻辑电平为第一逻辑电平时，由地址选择的存储器组和对未选择的存储体的失活信号，使得响应于激活信号的所选择的存储器组在活动周期中工作，而未选定的存储器组响应于灭活信号在预充电循环中工作。

18. 发明授权

US5703828A Semiconductor memory 失效
标题翻译：半导体存储器
公开(公告)号：US5703828A
公开(公告)日：1997-12-30
申请号：US580622
申请日：1995-12-29
申请人： Churoo Park , Hyun-Soon Jang , Chull-Soo Kim , Myung-Ho Kim , Seung-Hun Lee , Si-Yeol Lee , Ho-Cheol Lee , Tae-Jin Kim , Yun-Ho Choi
发明人： Churoo Park , Hyun-Soon Jang , Chull-Soo Kim , Myung-Ho Kim , Seung-Hun Lee , Si-Yeol Lee , Ho-Cheol Lee , Tae-Jin Kim , Yun-Ho Choi
IPC分类号： G11C11/401 , G11C7/00 , G11C7/10 , G11C11/403 , G11C11/406 , G11C11/407 , G11C11/4076 , G11C11/408 , G11C11/409 , G11C8/00
CPC分类号： G11C7/1018 , G11C11/406 , G11C11/40618 , G11C11/4076 , G11C11/408 , G11C11/4082 , G11C11/4087 , G11C7/1045 , G11C7/1072 , G11C7/222 , G11C7/225 , G11C2207/2281
摘要： A synchronous dynamic random access memory capable of accessing data in a memory cell array therein in synchronism with a system clock from an external system such as a central processing unit (CPU). The synchronous DRAM receives an external clock and includes a plurality of memory banks each including a plurality of memory cells and operable in either an active cycle or a precharge cycle, a circuit for receiving a row address strobe signal and latching a logic level of the row address strobe signal in response to the clock, an address input circuit for receiving an externally generated address selecting one of the memory banks, and a circuit for receiving the latched logic level and the address from the address input circuit and for outputting an activation signal to the memory bank selected by the address and an inactivation signals to unselected memory banks when the latched logic level is a first logic level, so that the selected memory bank responsive to the activation signal operates in the active cycle while the unselected memory banks responsive to the inactivation signals operate in the precharge cycle.
摘要翻译：能够与来自诸如中央处理单元（CPU）的外部系统的系统时钟同步地访问其中的存储器单元阵列中的数据的同步动态随机存取存储器。同步DRAM接收外部时钟并且包括多个存储器组，每个存储器组包括多个存储器单元并且可以在有效周期或预充电周期中操作，用于接收行地址选通信号并锁存该行的逻辑电平的电路响应于时钟的地址选通信号，用于接收选择存储体之一的外部产生的地址的地址输入电路，以及用于从地址输入电路接收锁存的逻辑电平和地址的电路，并将激活信号输出到当锁存的逻辑电平为第一逻辑电平时，由地址选择的存储器组和对未选择的存储体的失活信号，使得响应于激活信号的所选择的存储器组在活动周期中工作，而未选定的存储器组响应于灭活信号在预充电循环中工作。

19. 发明授权

US09318063B2 Display apparatus and method of driving the same 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US09318063B2
公开(公告)日：2016-04-19
申请号：US13591531
申请日：2012-08-22
申请人： Tae-Jin Kim
发明人： Tae-Jin Kim
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3614 , G09G3/3655 , G09G2320/0214 , G09G2320/103 , G09G2330/021
摘要： A method of driving a display apparatus including a plurality of pixels that respectively store a voltage level corresponding to a data signal and respectively include a storage capacitor connected between a pixel electrode and a second common voltage electrode, the method including operations of determining whether image data of a current frame is changed, compared to image data of a previous frame, when the image data of the current frame is changed, storing a voltage level corresponding to the image data of the current frame in the storage capacitor of each of the plurality of pixels, and when the image data of the current frame is not changed, changing a level of a second common voltage applied to the second common voltage electrode of each of the plurality of pixels.
摘要翻译：一种驱动显示装置的方法，所述显示装置包括分别存储与数据信号相对应的电压电平的多个像素，并且分别包括连接在像素电极和第二公共电压电极之间的存储电容器，所述方法包括确定图像数据与当前帧的图像数据相比，当前帧的图像数据被改变时，当当前帧的图像数据改变时，将与当前帧的图像数据相对应的电压电平存储在多个像素，并且当当前帧的图像数据不改变时，改变施加到多个像素中的每一个的第二公共电压电极的第二公共电压的电平。

20. 发明授权

US08697535B2 Thin film transistor substrate and method for fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08697535B2
公开(公告)日：2014-04-15
申请号：US13328094
申请日：2011-12-16
申请人： Tae-Jin Kim , Sang-Jae Yeo , Dae-Sung Choi
发明人： Tae-Jin Kim , Sang-Jae Yeo , Dae-Sung Choi
IPC分类号： H01L21/76
CPC分类号： H01L29/78696 , H01L29/42384
摘要： A thin film transistor substrate includes a substrate, a gate electrode on the substrate, an active layer on or below the gate electrode (the active layer at least partially overlapping the gate electrode) including a first active region and a second active region, the first active region and the second active region facing each other and extending beyond the gate electrode, a source electrode electrically connected to the first active region and a drain electrode electrically connected to the second active region, wherein the active layer includes a recess region which is at least partially recessed from a surface of the active layer facing the gate electrode, and the recess region includes a portion extending between the first active region and the second active region.
摘要翻译：薄膜晶体管衬底包括衬底，衬底上的栅电极，在包括第一有源区和第二有源区的栅电极（活性层至少部分与栅电极重叠的）上或之下的有源层，第一有源区和第二有源区彼此相对并延伸超过栅电极，电连接到第一有源区的源极和与第二有源区电连接的漏电极，其中有源层包括位于从有源层的面向栅电极的表面至少部分地凹入，并且凹陷区域包括在第一有源区和第二有源区之间延伸的部分。

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