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11. 发明申请

US20120138889A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120138889A1
公开(公告)日：2012-06-07
申请号：US13198105
申请日：2011-08-04
申请人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
发明人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/325 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/40 , H01S5/32341
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分和p侧电极。发光部分设置在n型和p型半导体层之间，并且包括多个势垒层和多个阱层。 p侧电极与p型半导体层接触。 p型半导体层包括第一，第二，第三和第四p型层。第一p型层与p侧电极接触。第二p型层与发光部接触。第三p型层设置在第一p型层和第二p型层之间。第四p型层设置在第二p型层和第三p型层之间。第二p型层含有Al并含有比第一浓度低的浓度的p型杂质。

12. 发明申请

US20110198561A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110198561A1
公开(公告)日：2011-08-18
申请号：US12874510
申请日：2010-09-02
申请人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
发明人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes AlX1Ga1-x1N having first Al composition ratio x1. The second layer is provided between the first layer and the p-type semiconductor layer and includes Alx2Ga1-x2N having second Al composition ratio x2 higher than the first Al composition ratio x1. The intermediate layer is provided between the first layer and the light emitting portion and has a thickness not smaller than 3 nanometers and not larger than 8 nanometers and includes Inz1Ga1-z1N (0≦z1
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分，第一层，第二层和中间层。半导体层包括氮化物半导体。发光部分设置在n型半导体层和p型半导体层之间，并且包括量子阱层。第一层设置在发光部和p型半导体层之间，并且包括具有第一Al组成比x1的AlX1Ga1-x1N。第二层设置在第一层和p型半导体层之间，并且包括具有比第一Al组成比x1高的第二Al组成比x2的Al x2 Ga1-x2N。中间层设置在第一层和发光部之间，并且具有不小于3纳米且不大于8纳米的厚度，并且包括Inz1Ga1-z1N（0＆nlE; z1 <1）。

13. 发明授权

US08643044B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08643044B2
公开(公告)日：2014-02-04
申请号：US13222912
申请日：2011-08-31
申请人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。第一半导体层具有第一和第二部分。发光层设置在第二部分上。第二半导体层设置在发光层上。第一电极设置在第一部分上。第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。焊盘层连接到第二电极。焊盘层的透射率低于第二电极的透射率。第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

14. 发明申请

US20120286284A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 有权
标题翻译：半导体发光器件和散热器
公开(公告)号：US20120286284A1
公开(公告)日：2012-11-15
申请号：US13206700
申请日：2011-08-10
申请人： Koichi TACHIBANA , Shigeya Kimura , Hajime Nago , Shinya Nunoue
发明人： Koichi TACHIBANA , Shigeya Kimura , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01S5/3407 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.
摘要翻译：根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。基础层包括氮化物半导体。基础层的位错密度不大于5×108cm-2。第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。发光部分设置在第一半导体层上。发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

15. 发明授权

US09142717B2 Semiconductor light emitting device and wafer 有权
标题翻译：半导体发光器件和晶圆
公开(公告)号：US09142717B2
公开(公告)日：2015-09-22
申请号：US13206700
申请日：2011-08-10
申请人： Koichi Tachibana , Shigeya Kimura , Hajime Nago , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/00 , H01L33/12 , B82Y20/00 , H01L33/20 , H01L33/22 , H01L33/06 , H01L33/08 , H01L33/32 , H01S5/34 , H01S5/343
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01S5/3407 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.
摘要翻译：根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。基础层包括氮化物半导体。基础层的位错密度不大于5×108cm-2。第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。发光部分设置在第一半导体层上。发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

16. 发明授权

US08455917B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08455917B2
公开(公告)日：2013-06-04
申请号：US13221456
申请日：2011-08-30
申请人： Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shigeya Kimura , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L29/66
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/025 , H01L33/06
摘要： According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.
摘要翻译：根据一个实施例，在氮化物半导体发光器件中，第一覆盖层包括n型氮化物半导体。在第一包层上形成有源层，并且包括含In氮化物半导体。在有源层上形成GaN层。第一AlGaN层形成在GaN层上，并具有第一Al组成比。在第一AlGaN层上形成p型第二AlGaN层，具有高于第一Al组成比的第二Al组成比，并且含有比GaN层和第一AlGaN层更大量的Mg。第二覆盖层形成在第二AlGaN层上，并且包括p型氮化物半导体。

17. 发明授权

US09048362B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09048362B2
公开(公告)日：2015-06-02
申请号：US13405565
申请日：2012-02-27
申请人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
发明人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32 , B82Y20/00 , H01S5/343 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.
摘要翻译：根据一个实施例，半导体发光器件包括含有氮化物半导体和发光层的n型和p型半导体层。发光层包括含有III族元素的阻挡层，以及与阻挡层堆叠并含有III族元素的阱层。阻挡层被分为n型半导体层侧的第一部分和p型半导体层侧的第二部分，第二部分的III族元素中的In组成比低于第一部分一部分。阱层被分为n型半导体层侧的第三部分和p型半导体层侧的第四部分，第四部分的III族元素中的In组成比高于第三部分的第三部分一部分。

18. 发明授权

US08895956B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08895956B2
公开(公告)日：2014-11-25
申请号：US13218827
申请日：2011-08-26
申请人： Shigeya Kimura , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Shigeya Kimura , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/04 , H01L33/32 , H01L33/06
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.
摘要翻译：根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。

19. 发明申请

US20120286237A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 审中-公开
标题翻译：半导体发光器件和散热器
公开(公告)号：US20120286237A1
公开(公告)日：2012-11-15
申请号：US13222185
申请日：2011-08-31
申请人： Hajime Nago , Koichi Tachibana , Shigeya Kimura , Takahiro Sato , Taisuke Sato , Toshihide Ito , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Shigeya Kimura , Takahiro Sato , Taisuke Sato , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/325 , H01S5/34333 , H01S2304/04
摘要： According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including Inx1Ga1-x1N (0
摘要翻译：根据一个实施例，半导体发光器件包括：n型半导体层，p型半导体层和发光部分。发光部分设置在n型半导体层和p型半导体层之间。发光部分包括：包括In x Ga 1-x1 N（0

20. 发明申请

US20120049157A1 NITRIDE SEMICONDUCTOR LIGHT EMMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体光照射装置及其制造方法
公开(公告)号：US20120049157A1
公开(公告)日：2012-03-01
申请号：US13221456
申请日：2011-08-30
申请人： Hajime NAGO , Koichi Tachibana , Toshiyuki Oka , Shigeya Kimura , Shinya Nunoue
发明人： Hajime NAGO , Koichi Tachibana , Toshiyuki Oka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/06 , H01L33/30
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/025 , H01L33/06
摘要： According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.
摘要翻译：根据一个实施例，在氮化物半导体发光器件中，第一覆盖层包括n型氮化物半导体。在第一包层上形成有源层，并且包括含In氮化物半导体。在有源层上形成GaN层。第一AlGaN层形成在GaN层上，并具有第一Al组成比。在第一AlGaN层上形成p型第二AlGaN层，具有高于第一Al组分比的第二Al组分比，并且含有比GaN层和第一AlGaN层更大量的Mg。第二覆盖层形成在第二AlGaN层上，并且包括p型氮化物半导体。

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