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11. 发明申请

US20050152634A1 Optical device, method for fabricating optical device, cap component, and method for forming cap component 有权
标题翻译：光学元件，光学元件的制造方法，盖部件，以及形成盖部件的方法
公开(公告)号：US20050152634A1
公开(公告)日：2005-07-14
申请号：US10980154
申请日：2004-11-04
申请人： Shigeki Okamoto , Masaya Tateyanagi , Masanori Mimamio , Kiyoshi Fujihara , Hiroyuki Ishida , Toshiyuki Fukuda
发明人： Shigeki Okamoto , Masaya Tateyanagi , Masanori Mimamio , Kiyoshi Fujihara , Hiroyuki Ishida , Toshiyuki Fukuda
IPC分类号： H01S5/022 , G02B6/12 , H01L21/50 , H01L23/00 , H01L31/02 , H01S5/026 , H05K7/14
CPC分类号： H01L31/022408 , H01L31/02002 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： An optical device includes a copper plate, light receiving elements mounted on the copper plate, a light emitting element mounted on the light receiving elements, a flexible substrate bent to cover portions of upper and side surfaces of the copper plate, and a positioning frame of metal for fixing the flexible substrate and the copper plate to each other. Since the positioning frame secures the flexible substrate and the copper plate against movement, a thin optical device can be attained without employing a resin-molded construction.
摘要翻译：光学装置包括铜板，安装在铜板上的光接收元件，安装在光接收元件上的发光元件，弯曲成覆盖铜板的上表面和侧表面的部分的柔性基板，以及定位框架用于将柔性基板和铜板彼此固定的金属。由于定位框架固定柔性基板和铜板以防止移动，所以可以在不使用树脂模制结构的情况下获得薄的光学装置。

12. 发明授权

US5936763A Optical fiber amplifier, semiconductor laser module for pumping and optical signal communication system 失效
标题翻译：光纤放大器，用于泵浦和光信号通信系统的半导体激光模块
公开(公告)号：US5936763A
公开(公告)日：1999-08-10
申请号：US968578
申请日：1997-11-13
申请人： Masahiro Mitsuda , Tomoaki Uno , Kiyoshi Fujihara
发明人： Masahiro Mitsuda , Tomoaki Uno , Kiyoshi Fujihara
IPC分类号： G02B6/42 , H01S3/094 , G02B6/28 , H01S3/30
CPC分类号： H01S3/094003 , G02B6/4249 , G02B6/4246 , H01S3/094096
摘要： The optical fiber amplifier of this invention includes plural pump light sources for emitting pump light; a first wavelength multiplexer for receiving the pump light emitted by the pump light sources at plural input ports and wavelength multiplexing the received pump light, so as to generate wavelength multiplexed pump light and output the wavelength multiplexed pump light from an output port; a second wavelength multiplexer for receiving the wavelength multiplexed pump light at a first input port and receiving signal light at a second input port, so as to generate coupled light by coupling the wavelength multiplexed pump light and the signal light and emit the coupled light from an output port; and a rare earth-doped optical fiber for receiving the coupled light emitted from the output port of the second wavelength multiplexer and amplifying the coupled light. At least one of the pump light sources is a narrow-linewidth light source for emitting light with a laser linewidth of approximately 5 nm or less as the pump light.
摘要翻译：本发明的光纤放大器包括用于发射泵浦光的多个泵浦光源; 第一波长多路复用器，用于接收在多个输入端口处由泵浦光源发射的泵浦光，并对接收的泵浦光进行波长多路复用，以产生波长多路复用的泵浦光，并从输出端口输出波长多路复用的泵浦光; 第二波长多路复用器，用于在第一输入端口处接收波长多路复用的泵浦光并在第二输入端口接收信号光，以便通过耦合所述波长多路复用的泵浦光和所述信号光来产生耦合的光，并从输出端口以及稀土掺杂光纤，用于接收从第二波长多路复用器的输出端口发射的耦合光并放大耦合的光。泵浦光源中的至少一个是用于发射具有约5nm或更小的激光线宽的光作为泵浦光的窄线宽光源。

13. 发明授权

US08525307B2 Semiconductor device, lead frame assembly, and method for fabricating the same 失效
标题翻译：半导体装置，引线框组件及其制造方法
公开(公告)号：US08525307B2
公开(公告)日：2013-09-03
申请号：US13192167
申请日：2011-07-27
申请人： Kenichi Ito , Shigehisa Oonakahara , Yoshikazu Tamura , Kiyoshi Fujihara
发明人： Kenichi Ito , Shigehisa Oonakahara , Yoshikazu Tamura , Kiyoshi Fujihara
IPC分类号： H01L23/495
CPC分类号： H01L23/49861 , H01L23/047 , H01L23/24 , H01L23/49541 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L33/486 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/92247 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12041 , H01L2924/181 , H01L2924/3025 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00014 , H01L2924/20752 , H01L2924/00
摘要： A semiconductor device includes a lead frame, a semiconductor element mounted on the lead frame, and a frame-like member formed on the lead frame, surrounding the semiconductor element, and covering a side surface of the lead frame and exposing a lower surface of the lead frame. The frame-like member has at least one concave portion in a side surface thereof. The concave portion has a ceiling portion located at the same height as or lower than an upper surface of the lead frame, and a bottom portion located higher than the lower surface of the lead frame.
摘要翻译：半导体器件包括引线框架，安装在引线框架上的半导体元件和形成在引线框架上的框架构件，围绕半导体元件，并且覆盖引线框架的侧表面并暴露引线框架的下表面引线框架框状构件在其侧面具有至少一个凹部。凹部具有位于与引线框架的上表面相同的高度的顶部和位于引线框架的下表面之上的底部。

14. 发明申请

US20070008862A1 Semiconductor laser unit and optical pickup device 失效
标题翻译：半导体激光单元和光学拾取装置
公开(公告)号：US20070008862A1
公开(公告)日：2007-01-11
申请号：US11480478
申请日：2006-07-05
申请人： Kiyoshi Fujihara , Masaya Tateyanagi , Shigeki Okamoto
发明人： Kiyoshi Fujihara , Masaya Tateyanagi , Shigeki Okamoto
IPC分类号： G11B7/00
CPC分类号： G11B7/127 , H01L2224/48091 , H01S5/02248 , H01L2924/00014
摘要： The semiconductor laser unit includes: a metal plate having a center portion wider than the remaining portions; a flexible substrate having a first opening; a substrate mounted on the center portion; a semiconductor laser placed on the substrate; a frame having a second opening and fixing the flexible substrate in the state of being bent along from the top surface to both side faces of the metal plate; and an optical element covering the second opening. The flexible substrate is fixed so that the first opening extends over the top surface and both side faces of the center portion.
摘要翻译：半导体激光单元包括：具有比其余部分宽的中心部分的金属板; 具有第一开口的柔性基板; 安装在中心部分上的基板; 放置在基板上的半导体激光器; 具有第二开口的框架，并且在从所述金属板的顶面向两侧面弯曲的状态下固定所述柔性基板; 以及覆盖所述第二开口的光学元件。柔性基板被固定，使得第一开口在中心部分的顶表面和两个侧面上延伸。

15. 发明申请

US20060092812A1 Optical device and method of manufacturing the same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US20060092812A1
公开(公告)日：2006-05-04
申请号：US11253602
申请日：2005-10-20
申请人： Masaya Tateyanagi , Masanori Minamio , Shigeki Okamoto , Kiyoshi Fujihara
发明人： Masaya Tateyanagi , Masanori Minamio , Shigeki Okamoto , Kiyoshi Fujihara
IPC分类号： G11B7/00
CPC分类号： H01L31/0203 , H01L2224/48091 , H01L2924/3025 , H05K1/147 , H05K1/189 , H01L2924/00014 , H01L2924/00
摘要： A copper frame plate (2) has a central frame plate (2a) and a pair of side frame plates (2c) bent from both ends of the central frame plate. A flexible substrate (3) has a central substrate (3a) covering the central frame plate and bent substrates (3b) bent from the central substrate so as to cover the side frame plates. An optical element (4) is mounted on the central frame plate. A plurality of internal wiring terminals (9) connected to the optical element are disposed on the central substrate and arranged in the width direction (W) along which the pair of side frame plates are opposed to each other. A plurality of external wiring terminals (11) used for connection to external equipment are disposed on the bent substrates and arranged in the length direction (L) orthogonal to the width direction.
摘要翻译：铜框架板（2）具有中央框架板（2a）和从中央框架板的两端弯曲的一对侧框架板（2c）。柔性基板（3）具有覆盖中心框架板的中心基板（3a）和从中心基板弯曲的弯曲基板（3b），以覆盖侧框架板。光学元件（4）安装在中央框架板上。连接到光学元件的多个内部布线端子（9）设置在中心基板上并且沿着一对侧框板彼此相对的宽度方向（W）布置。用于与外部设备连接的多个外部接线端子（11）设置在弯曲的基板上并且沿与宽度方向正交的长度方向（L）布置。

16. 发明授权

US6108361A Semiconductor laser and method for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US6108361A
公开(公告)日：2000-08-22
申请号：US106892
申请日：1998-06-29
申请人： Kiyoshi Fujihara , Yoshihiro Mori
发明人： Kiyoshi Fujihara , Yoshihiro Mori
IPC分类号： H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01L24/33 , H01S5/024 , H01S5/227 , H01L2924/12042 , H01S2301/18 , H01S5/0224 , H01S5/02264 , H01S5/02272 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2206 , H01S5/2222 , H01S5/2275 , H01S5/3434 , H01S5/34373
摘要： A semiconductor laser includes a substrate of a first conductive type, a mesa provided on the substrate and having a multilayered structure including at least a cladding layer of the first conductive type, an active layer and another cladding layer of a second conductive type, a current blocking layer provided on both sides of the mesa, a buried layer of the second conductive type provided on the mesa and the current blocking layer, and a contact layer of the second conductive type provided in a predetermined region on the buried layer. The predetermined region does not include a portion immediately above the mesa.
摘要翻译：半导体激光器包括第一导电类型的衬底，设置在衬底上的台面，并且具有至少包括第一导电类型的包覆层，有源层和第二导电类型的另一覆盖层的多层结构，电流设置在台面两侧的阻挡层，设置在台面上的第二导电类型的埋层和电流阻挡层，以及设置在掩埋层上的预定区域中的第二导电类型的接触层。预定区域不包括紧邻台面上方的部分。

17. 发明授权

US5949808A Semiconductor laser and method for producing the same 失效
公开(公告)号：US5949808A
公开(公告)日：1999-09-07
申请号：US684385
申请日：1996-07-19
申请人： Kiyoshi Fujihara , Yoshihiro Mori
发明人： Kiyoshi Fujihara , Yoshihiro Mori
IPC分类号： H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01L24/33 , H01S5/024 , H01S5/227 , H01L2924/12042 , H01S2301/18 , H01S5/0224 , H01S5/02264 , H01S5/02272 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2206 , H01S5/2222 , H01S5/2275 , H01S5/3434 , H01S5/34373
摘要： A semiconductor laser includes a substrate of a first conductive type, a mesa provided on the substrate and having a multilayered structure including at least a cladding layer of the first conductive type, an active layer and another cladding layer of a second conductive type, a current blocking layer provided on both sides of the mesa, a buried layer of the second conductive type provided on the mesa and the current blocking layer, and a contact layer of the second conductive type provided in a predetermined region on the buried layer. The predetermined region does not include a portion immediately above the mesa.

18. 发明授权

US5793788A Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same 失效
标题翻译：包含铂层的p型非合金电极的半导体发光元件及其制造方法
公开(公告)号：US5793788A
公开(公告)日：1998-08-11
申请号：US693806
申请日：1996-08-01
申请人： Yuichi Inaba , Kiyoshi Fujihara , Masato Ishino , Takeshi Shimazaki , Isao Kidoguchi
发明人： Yuichi Inaba , Kiyoshi Fujihara , Masato Ishino , Takeshi Shimazaki , Isao Kidoguchi
IPC分类号： H01L33/30 , H01L33/32 , H01L33/40 , H01S5/042 , H01S5/223 , H01S5/227 , H01S5/30 , H01S3/19 , H01L23/48 , H01L33/00
CPC分类号： H01L33/40 , H01S5/0425 , H01L33/30 , H01L33/32 , H01S5/0421 , H01S5/2231 , H01S5/2275 , H01S5/2277 , H01S5/3054
摘要： A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer.
摘要翻译：半导体发光元件包括p型电极，该p型电极又包括至少包括Pt层的接触电极层。特别地，半导体发光元件还包括至少包括n型包覆层，有源层和p型覆层的层状结构; 以及形成在层状结构上方的p型接触层，并且在p型接触层上形成接触电极层。

19. 发明授权

US5227015A Method of fabricating semiconductor laser 失效
标题翻译：制造半导体激光器的方法
公开(公告)号：US5227015A
公开(公告)日：1993-07-13
申请号：US735728
申请日：1991-07-25
申请人： Kiyoshi Fujihara , Masato Ishino , Naoki Takenaka
发明人： Kiyoshi Fujihara , Masato Ishino , Naoki Takenaka
IPC分类号： H01L21/306 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/323
CPC分类号： H01L21/30612 , H01S5/227 , H01S5/1231 , H01S5/2081 , H01S5/2275 , H01S5/32391 , Y10S148/095
摘要： An n-InP buffer layer 102, an InGaAsP active layer 103, a p-InP cladding layer 104 and a p-InGaAsP surface protective layer 105 are successively epitaxially grown on an n-InP substrate 101 having a (100) plane as a main plane. An etching mask 106, an insulating film, is formed in a stripe in the direction by photolithography and dry etching. Using a solution comprising a mixture of hydrochloric acid, oxygenated water and acetic acid, the n-InP buffer layer 102 is etched to a depth lower than the p-InP cladding layer 103, to form a mesa stripe 107. Next, the insulating film 106 is removed and the p-InGaAsP surface protective layer 105 is removed using a solution comprising a mixture of sulfuric acid and oxygenated water. Thereafter, InP current blocking layers 108 and 109 are selectively formed at the regions other than the mesa stripe 107 by the liquid-phase epitaxial growth. Thus, a buried heterostructure semiconductor laser is fabricated, having good laser characteristics and a high reliability.
摘要翻译：在具有（100）面作为主要的n-InP衬底101上依次外延生长n-InP缓冲层102，InGaAsP有源层103，p-InP包层104和p-InGaAsP表面保护层105 飞机通过光刻和干蚀刻在<011>方向上的条纹中形成蚀刻掩模106，绝缘膜。使用包含盐酸，含氧水和乙酸的混合物的溶液，将n-InP缓冲层102蚀刻到比p-InP包覆层103低的深度，以形成台面条107.接下来，绝缘膜 106，并且使用包含硫酸和含氧水的混合物的溶液除去p-InGaAsP表面保护层105。此后，通过液相外延生长，在台面条107以外的区域选择性地形成InP电流阻挡层108和109。因此，制造了具有良好的激光特性和高可靠性的掩埋异质结构半导体激光器。

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