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11. 发明授权

US07716004B2 Method and apparatus for matching test equipment calibration 有权
标题翻译：匹配测试设备校准的方法和设备
公开(公告)号：US07716004B2
公开(公告)日：2010-05-11
申请号：US11772467
申请日：2007-07-02
申请人： Elfido Coss, Jr. , Kevin R. Lensing , Eric Omar Green , Rajesh Vijayaraghavan
发明人： Elfido Coss, Jr. , Kevin R. Lensing , Eric Omar Green , Rajesh Vijayaraghavan
IPC分类号： G01M19/00
CPC分类号： G01M99/00 , G01R31/2851 , G01R31/3191 , G01R35/005
摘要： A method includes collecting trace data associated with a plurality of device testers. Tester health metrics are generated for each of the device testers. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester health metrics. A corrective action is initiated for the tester associated with the selected tester health metric. A method includes collecting trace data associated with a plurality of device testers. The trace data for each of the device testers is compared to a reference trace data set to generate tester health metrics for each of the device testers based on the difference therebetween. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester health metrics. A corrective action is initiated for the tester associated with the selected tester health metric.
摘要翻译：一种方法包括收集与多个设备测试器相关联的跟踪数据。为每个设备测试人员生成测试仪健康度量。分析测试者健康度量，以识别从多个测试者健康度量中分歧的所选测试者健康度量。对与所选测试者健康度量相关联的测试仪启动校正动作。一种方法包括收集与多个设备测试器相关联的跟踪数据。将每个设备测试仪的跟踪数据与参考跟踪数据集进行比较，以根据其间的差异为每个设备测试人员生成测试仪健康度量。分析测试者健康度量，以识别从多个测试者健康度量中分歧的所选测试者健康度量。对与所选测试者健康度量相关联的测试仪启动校正动作。

12. 发明申请

US20090012730A1 Method and apparatus for matching test equipment calibration 有权
标题翻译：匹配测试设备校准的方法和设备
公开(公告)号：US20090012730A1
公开(公告)日：2009-01-08
申请号：US11772467
申请日：2007-07-02
申请人： ELFIDO COSS, JR. , Kevin R. Lensing , Eric Omar Green , Rajesh Vijayaraghavan
发明人： ELFIDO COSS, JR. , Kevin R. Lensing , Eric Omar Green , Rajesh Vijayaraghavan
IPC分类号： G01M19/00
CPC分类号： G01M99/00 , G01R31/2851 , G01R31/3191 , G01R35/005
摘要： A method includes collecting trace data associated with a plurality of device testers. Tester health metrics are generated for each of the device testers. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester health metrics. A corrective action is initiated for the tester associated with the selected tester health metric. A method includes collecting trace data associated with a plurality of device testers. The trace data for each of the device testers is compared to a reference trace data set to generate tester health metrics for each of the device testers based on the difference therebetween. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester health metrics. A corrective action is initiated for the tester associated with the selected tester health metric.
摘要翻译：一种方法包括收集与多个设备测试器相关联的跟踪数据。为每个设备测试人员生成测试仪健康度量。分析测试者健康度量，以识别从多个测试者健康度量中分歧的所选测试者健康度量。对与所选测试者健康度量相关联的测试仪启动校正动作。一种方法包括收集与多个设备测试器相关联的跟踪数据。将每个设备测试仪的跟踪数据与参考跟踪数据集进行比较，以根据其间的差异为每个设备测试人员生成测试仪健康度量。分析测试者健康度量，以识别从多个测试者健康度量中分歧的所选测试者健康度量。对与所选测试者健康度量相关联的测试仪启动校正动作。

13. 发明申请

US20090006021A1 METHOD AND APPARATUS FOR IMPLEMENTING SCALED DEVICE TESTS 失效
标题翻译：用于实施标准设备测试的方法和装置
公开(公告)号：US20090006021A1
公开(公告)日：2009-01-01
申请号：US11771467
申请日：2007-06-29
申请人： Kevin R. Lensing , Michael G. McIntyre
发明人： Kevin R. Lensing , Michael G. McIntyre
IPC分类号： G01R31/02
CPC分类号： G01R31/2894 , G01R31/31707
摘要： A method includes defining a hierarchy of test routines in a test program for testing integrated circuit devices. A first device is tested at a first screening level in the hierarchy. The first device is tested at a second detailed level in the hierarchy responsive to the first device failing the testing at the first screening level.
摘要翻译：一种方法包括在用于测试集成电路设备的测试程序中定义测试例程的层级。第一个设备在层次结构中的第一个筛选级别进行测试。第一个设备在层次结构中的第二个详细级别进行测试，响应于第一个设备在第一个筛选级别的测试失败。

14. 发明申请

US20080281545A1 DETERMINING DIE TEST PROTOCOLS BASED ON PROCESS HEALTH 有权
标题翻译：基于过程健康确定DIE测试协议
公开(公告)号：US20080281545A1
公开(公告)日：2008-11-13
申请号：US11745688
申请日：2007-05-08
申请人： Michael G. McIntyre , Kevin R. Lensing
发明人： Michael G. McIntyre , Kevin R. Lensing
IPC分类号： G01R31/26 , G06F19/00
CPC分类号： G01R31/2894
摘要： A method includes receiving a first set of parameters associated with a subset of a plurality of die on a wafer. A die health metric is determined for at least a portion of the plurality of die based on the first set of parameters. The die health metric includes at least one process component associated with the fabrication of the die and at least one performance component associated with an electrical performance characteristic of the die. At least one of the die is tested. A protocol of the testing is determined based on the associated die health metric.
摘要翻译：一种方法包括接收与晶片上的多个管芯的子集相关联的第一组参数。基于第一组参数为多个管芯的至少一部分确定管芯健康度量。模具健康度量包括与模具的制造相关联的至少一个工艺部件和与模具的电性能特性相关联的至少一个性能部件。至少有一个模具被测试。测试的协议基于相关的模具健康度量来确定。

15. 发明授权

US07337034B1 Method and apparatus for determining a root cause of a statistical process control failure 有权
标题翻译：用于确定统计过程控制失败的根本原因的方法和装置
公开(公告)号：US07337034B1
公开(公告)日：2008-02-26
申请号：US11220436
申请日：2005-09-07
申请人： Kevin R. Lensing , Ernest Dean Adams, III
发明人： Kevin R. Lensing , Ernest Dean Adams, III
IPC分类号： G06F19/00
CPC分类号： G05B23/0235 , G05B23/0281 , G05B2219/45031
摘要： The present invention provides a method and apparatus for determining a root cause of a fault. The method includes detecting at least one fault associated with at least one first wafer processed according to a first processing context and processing at least one second wafer according to at least one second processing context. The second processing context is different than the first processing context. The method also includes determining a root cause associated with the fault based on the first processed wafer and the second processed wafer.
摘要翻译：本发明提供一种确定故障根本原因的方法和装置。该方法包括检测与根据第一处理环境处理的至少一个第一晶片相关联的至少一个故障，以及根据至少一个第二处理环境处理至少一个第二晶片。第二处理环境与第一处理环境不同。该方法还包括基于第一处理晶片和第二处理晶片来确定与故障相关联的根本原因。

16. 发明授权

US07282374B1 Method and apparatus for comparing device and non-device structures 有权
标题翻译：用于比较装置和非装置结构的方法和装置
公开(公告)号：US07282374B1
公开(公告)日：2007-10-16
申请号：US10980517
申请日：2004-11-03
申请人： Kevin R. Lensing , Matthew S. Ryskoski
发明人： Kevin R. Lensing , Matthew S. Ryskoski
IPC分类号： H01L21/00
CPC分类号： G05B19/41875 , G01N21/211 , G01N2021/4735 , G05B2219/37224 , H01L22/12 , H01L22/20 , H01L2924/0002 , Y02P90/22 , H01L2924/00
摘要： The present invention provides a method and apparatus for comparing device and non-device structures. The method includes determining at least one characteristic parameter associated with at least one non-device structure on at least one workpiece and determining at least one characteristic parameter associated with at least one device structure on the at least one workpiece. The method also includes comparing the at least one characteristic parameter associated with the at least one non-device structure and the at least one characteristic parameter associated with at least one device structure.
摘要翻译：本发明提供了一种用于比较装置和非装置结构的方法和装置。该方法包括确定与至少一个工件上的至少一个非装置结构相关联的至少一个特征参数，并确定与至少一个工件上的至少一个装置结构相关联的至少一个特征参数。该方法还包括比较与至少一个非设备结构相关联的至少一个特性参数和与至少一个设备结构相关联的至少一个特征参数。

17. 发明授权

US06933158B1 Method of monitoring anneal processes using scatterometry, and system for performing same 失效
标题翻译：使用散射法监测退火处理的方法，以及执行相同的系统
公开(公告)号：US06933158B1
公开(公告)日：2005-08-23
申请号：US10285041
申请日：2002-10-31
申请人： Kevin R. Lensing , James Broc Stirton , Homi E. Nariman , Steven P. Reeves
发明人： Kevin R. Lensing , James Broc Stirton , Homi E. Nariman , Steven P. Reeves
IPC分类号： G01N21/21 , G01N21/47 , H01L21/265 , H01L21/324 , H01L21/66 , H01L23/544
CPC分类号： G01N21/4788 , G01N21/211 , H01L21/26513 , H01L21/324 , H01L22/20 , H01L22/34
摘要： The present invention is directed to several inventive methods of monitoring anneal processes performed on implant regions, and a system for accomplishing same. In one aspect, the method comprises forming a first plurality of implant regions in a semiconducting substrate, performing at least one anneal process on implant regions, performing a scatterometric measurement of at least one of the implant regions after at least a portion of the anneal process is performed to determine a profile of the implant region and determining an effectiveness of the anneal process based upon the determined profile of the implant region. In other embodiments, one or more parameters of the anneal process may be varied on subsequently processed substrates based upon the determined efficiency of the anneal process.
摘要翻译：本发明涉及用于监测在植入区域上执行的退火处理的几种发明方法，以及用于实现其的系统。在一个方面，该方法包括在半导体衬底中形成第一多个注入区域，在注入区域上执行至少一个退火工艺，在退火工艺的至少一部分之后执行至少一个注入区域的散射测量被执行以确定植入区域的轮廓并且基于所确定的植入区域的轮廓来确定退火过程的有效性。在其他实施例中，退火工艺的一个或多个参数可以基于确定的退火工艺的效率在随后处理的衬底上变化。

18. 发明授权

US06630362B1 Method and apparatus for performing trench depth analysis 有权
标题翻译：进行沟槽深度分析的方法和装置
公开(公告)号：US06630362B1
公开(公告)日：2003-10-07
申请号：US09880990
申请日：2001-06-13
申请人： Kevin R. Lensing
发明人： Kevin R. Lensing
IPC分类号： H01L2166
CPC分类号： H01L22/14 , H01L22/26
摘要： A method and an apparatus for performing trench depth analysis in semiconductor device manufacturing. A first processing on at least one semiconductor wafer is performed. Optical trench data is acquired from the processed semiconductor wafer. An optical trench analysis, based upon the optical trench data, is performed. A corrective feedback step is performed during a second processing of the semiconductor wafer in response to the optical trench analysis.
摘要翻译：一种用于在半导体器件制造中进行沟槽深度分析的方法和装置。执行至少一个半导体晶片的第一处理。从处理的半导体晶片获取光沟槽数据。基于光沟槽数据进行光沟槽分析。响应于光学沟槽分析在半导体晶片的第二次处理期间执行校正反馈步骤。

19. 发明授权

US06562635B1 Method of controlling metal etch processes, and system for accomplishing same 失效
标题翻译：控制金属蚀刻工艺的方法及其完成的系统
公开(公告)号：US06562635B1
公开(公告)日：2003-05-13
申请号：US10083710
申请日：2002-02-26
申请人： Kevin R. Lensing , James Broc Stirton , Matthew A. Purdy
发明人： Kevin R. Lensing , James Broc Stirton , Matthew A. Purdy
IPC分类号： H01L2100
CPC分类号： H01L21/67253 , G01N21/9501 , G01N21/956 , H01L22/34
摘要： A method of using scatterometry measurements to determine and control conductive interconnect profiles is disclosed. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which correspond to a grating structure comprised of a plurality of conductive interconnects having a known profile, providing a substrate having at least one grating structure formed thereabove, the formed grating structure comprised of a plurality of conductive interconnects having an unknown profile, and illuminating the formed grating structure. The method further comprises measuring light reflected off of the grating structure to generate an optical characteristic trace for the formed grating structure and determining a profile of the gate electrode structures comprising the formed grating structure by correlating the generated optical characteristic trace to an optical characteristic trace from the library. In another embodiment, the method disclosed herein comprises comparing a generated optical characteristic trace of conductive interconnects having an unknown profile to a target trace established for conductive interconnects having an ideal or acceptable profile.
摘要翻译：公开了一种使用散射测量来确定和控制导电互连轮廓的方法。在一个实施例中，该方法包括提供光学特征曲线库，每个光栅特征迹线对应于由具有已知轮廓的多个导电互连构成的光栅结构，提供具有形成在其上方的至少一个光栅结构的衬底，所形成的光栅结构由具有未知轮廓的多个导电互连构成，并且照射所形成的光栅结构。该方法还包括测量从光栅结构反射的光，以产生用于所形成的光栅结构的光学特征迹线，并通过将所产生的光学特性曲线与所形成的光学特征曲线相关联的光学特性曲线相关联来确定包括所形成的光栅结构的栅电极结构的轮廓图书馆。在另一个实施例中，本文公开的方法包括将具有未知轮廓的导电互连的所产生的光学特性曲线与为具有理想或可接受轮廓的导电互连建立的目标轨迹进行比较。

20. 发明授权

US06537833B1 Method and apparatus for characterizing an interconnect structure profile using scatterometry measurements 有权
标题翻译：使用散射测量来表征互连结构轮廓的方法和装置
公开(公告)号：US06537833B1
公开(公告)日：2003-03-25
申请号：US09885411
申请日：2001-06-19
申请人： Kevin R. Lensing
发明人： Kevin R. Lensing
IPC分类号： H01L2166
CPC分类号： G01N21/4738
摘要： A method for characterizing an interconnect structure profile includes providing a wafer having a grating structure including a plurality of interconnect structures; illuminating at least a portion of the grating structure; measuring light reflected from the grating structure to generate a reflection profile; and determining a profile of the interconnect structures based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure including a plurality of interconnect structures includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grating structure. The detector is adapted to measure light reflected from the grating structure to generate a reflection profile. The data processing unit is adapted to determine a profile of the interconnect structures based on the reflection profile.
摘要翻译：用于表征互连结构轮廓的方法包括提供具有包括多个互连结构的光栅结构的晶片; 照亮所述光栅结构的至少一部分; 测量从光栅结构反射的光以产生反射曲线; 以及基于所述反射分布来确定所述互连结构的轮廓。适于接收具有包括多个互连结构的光栅结构的晶片的计量工具包括光源，检测器和数据处理单元。光源适于照亮光栅结构的至少一部分。检测器适于测量从光栅结构反射的光以产生反射曲线。数据处理单元适于基于反射曲线确定互连结构的轮廓。

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