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11. 发明授权

US06350999B1 Electron-emitting device 失效
标题翻译：电子发射器件
公开(公告)号：US06350999B1
公开(公告)日：2002-02-26
申请号：US09449525
申请日：1999-11-29
申请人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
发明人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
IPC分类号： H01L310328
CPC分类号： H01J1/308
摘要： In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.
摘要翻译：在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。由此获得优异的电子发射特性。

12. 发明授权

US06239674B1 Elliptical resonator with an input/output capacitive gap 失效
标题翻译：具有输入/输出电容间隙的椭圆谐振器
公开(公告)号：US06239674B1
公开(公告)日：2001-05-29
申请号：US08360362
申请日：1994-12-21
申请人： Akira Enokihara , Kentaro Setsune
发明人： Akira Enokihara , Kentaro Setsune
IPC分类号： H01P1203
CPC分类号： H01P7/082 , H01P7/084 , H01P7/086
摘要： A resonator having high Q-value has a compact structure with little loss caused by the conductor's resistance. The resonator includes a high-frequency circuit element. Two points on the circumference of the conductor of elliptical shape which forms the resonator at which both of the two dipole modes of the resonant modes of the resonator polarizing orthogonally are excited equally and are located at neighboring positions input/output bonding points. The input/output terminals are bonded to the resonator at the input/output bonding points.
摘要翻译：具有高Q值的谐振器具有紧凑的结构，导体电阻的损耗很小。谐振器包括高频电路元件。椭圆形导体的圆周上的两个点形成谐振器，谐振器的谐振模式的两个偶极子模式中的两个偶极子两者均匀地被激发并且位于相邻的位置输入/输出结合点。输入/输出端子在输入/输出接合点处接合到谐振器。

13. 发明授权

US06147360A Superconducting device and a method of manufacturing the same 失效
标题翻译：超导装置及其制造方法
公开(公告)号：US06147360A
公开(公告)日：2000-11-14
申请号：US82761
申请日：1998-05-21
申请人： Akihiro Odagawa , Hideaki Adachi , Kentaro Setsune
发明人： Akihiro Odagawa , Hideaki Adachi , Kentaro Setsune
IPC分类号： H01L39/22 , H01L29/06
CPC分类号： H01L39/225
摘要： This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly-shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part in between.
摘要翻译：本发明提供一种能够在基板上的任意位置再现的具有良好特性的超导装置及其制造方法。在作为栅电极的基板上设置有取向金属的凸区域（经处理的线状的铂薄膜）。然后，在凸区域上沉积氧化物绝缘膜（SrTiO 3薄膜），再在氧化物绝缘膜上沉积YBa2Cu3O7氧化物超导薄膜。因此，在凸部形成有晶界部。漏极电极和源极电极彼此面对地形成，晶界部分在其间。

14. 发明授权

US6016434A High-frequency circuit element in which a resonator and input/ouputs are relatively movable 失效
标题翻译：谐振器和输入/输出相对可移动的高频电路元件
公开(公告)号：US6016434A
公开(公告)日：2000-01-18
申请号：US765587
申请日：1996-12-17
申请人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
发明人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
IPC分类号： H01P1/203 , H01P7/08
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译： PCT No.PCT / JP95 / 01168 Sec。 371日期1996年12月17日第 102（e）日期1996年12月17日PCT提交1995年6月9日PCT公布。公开号WO95 / 35584 日期1995年12月28日在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和所述输入输出端子（13）形成为相对的。通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。

15. 发明授权

US5731270A Oxide superconductor and method and apparatus for fabricating the same 失效
标题翻译：氧化物超导体及其制造方法和装置
公开(公告)号：US5731270A
公开(公告)日：1998-03-24
申请号：US688687
申请日：1996-07-29
申请人： Kentaro Setsune , Yo Ichikawa , Akira Enokihara , Masahiro Sakai
发明人： Kentaro Setsune , Yo Ichikawa , Akira Enokihara , Masahiro Sakai
IPC分类号： H01L39/24 , B05D5/12 , B05D3/06
CPC分类号： H01L39/2464 , Y10S505/742
摘要： An oxide is formed which will form an oxide superconductor containing a Cu-O atomic layer. The oxide is hydrogenated. The oxide is oxidized after it is hydrogenated. The hydrogenation and the oxidization are executed simultaneously with or after the oxide is formed. The hydrogenation and the oxidization improve the superconducting characteristics of the oxide superconductor.
摘要翻译：形成氧化物，其形成含有Cu-O原子层的氧化物超导体。氧化物被氢化。氧化物在氢化后被氧化。氢化和氧化在氧化物形成之后或之后同时进行。氢化和氧化提高氧化物超导体的超导特性。

16. 发明授权

US5527767A Method for annealing thin film superconductors 失效
标题翻译：薄膜超导体退火方法
公开(公告)号：US5527767A
公开(公告)日：1996-06-18
申请号：US238339
申请日：1994-05-05
申请人： Kentaro Setsune , Kiyotaka Wasa , You Ichikawa
发明人： Kentaro Setsune , Kiyotaka Wasa , You Ichikawa
IPC分类号： H01L39/24 , B05D3/06
CPC分类号： H01L39/2464 , Y10S505/729 , Y10S505/742
摘要： There is disclosed a method for annealing oxide thin film superconductors having layered structures including at least Cu--O layers in which each oxide thin film superconductor is heated partially by a heating means and the heating portion is moved at a predetermined speed.
摘要翻译：公开了一种退火氧化物薄膜超导体的方法，其具有至少包含Cu-O层的层状结构，其中每个氧化物薄膜超导体部分地由加热装置加热并且加热部分以预定速度移动。

17. 发明授权

US4859908A Plasma processing apparatus for large area ion irradiation 失效
标题翻译：用于大面积离子照射的等离子体处理装置
公开(公告)号：US4859908A
公开(公告)日：1989-08-22
申请号：US100148
申请日：1987-09-23
申请人： Akihisa Yoshida , Kentaro Setsune , Takashi Hirao
发明人： Akihisa Yoshida , Kentaro Setsune , Takashi Hirao
IPC分类号： C30B31/22 , H01J37/32 , H01J27/02
CPC分类号： H01J37/32091 , C30B31/22 , H01J37/32357 , H01J37/3266
摘要： A plasma processing apparatus performs various plasma processings of a substrate having a large area in a semiconductor element manufacturing process, by using highly excited plasma generated at a low pressure under the application of RF power and a magnetic field. In this plasma processing apparatus, a gas is introduced into a vacuum chamber to be used as an ion source, RF power is applied to two electrodes having respective surfaces opposite to each other through the gas to thereby generate the plasma in the vacuum chamber, and a magnetic field is applied to the plasma from a magnetic field source arranged at a predetermined position. The intensity of the applied magnetic field is set to be 1.5 times or more the magnetic field intensity which causes electron cyclotron resonance to occur at the frequency f of the applied RF power. Particularly, when the frequency f of the RF power is 13.56 MHz, the magnetic field intensity is selected to be in the range from 25 gausses to 35 gausses.
摘要翻译：等离子体处理装置通过使用在RF功率和磁场的应用下在低压下产生的高激发等离子体，在半导体元件制造工艺中执行具有大面积的衬底的各种等离子体处理。在该等离子体处理装置中，将气体引入到真空室中以用作离子源，通过气体将两相电极的两个电极施加RF功率，从而在真空室中产生等离子体，从布置在预定位置的磁场源向等离子体施加磁场。所施加的磁场的强度被设定为在所施加的RF功率的频率f处发生电子回旋共振的磁场强度的1.5倍或更多。特别地，当RF功率的频率f为13.56MHz时，磁场强度被选择在从25高斯到35高斯的范围内。

18. 发明授权

US4610894A Method of manufacturing surface acoustic wave device 失效
标题翻译：表面声波装置的制造方法
公开(公告)号：US4610894A
公开(公告)日：1986-09-09
申请号：US623131
申请日：1984-06-19
申请人： Kentaro Setsune , Osamu Yamazaki , Kiyotaka Wasa , Kazuo Tazuke
发明人： Kentaro Setsune , Osamu Yamazaki , Kiyotaka Wasa , Kazuo Tazuke
IPC分类号： H03H3/08 , H03H3/10 , B05D3/06
CPC分类号： H03H3/10 , Y10T29/42
摘要： In a method of manufacturing a surface-acoustic-wave device composed of, at least, a substrate through which a surface acoustic wave is propagated, the propagation velocity of the surface acoustic wave is adjusted by applying light directly to the surface of the substrate constituting the device or through a thin film of asymmetric lattice configuration deposited thereon by sputtering, the thin film having a thickness not exceeding a value of 0.03 times as large as the wavelength of the surface acoustic wave propagated through the substrate.
摘要翻译：在制造表面弹性波装置的至少由表面声波传播的基板构成的表面声波装置的方法中，通过将光直接施加到构成的基板的表面来调节声表面波的传播速度该装置或通过溅射沉积在其上的不对称晶格构造的薄膜，所述薄膜的厚度不超过通过衬底传播的声表面波的波长的0.03倍。

19. 发明授权

US4464597A Surface acoustic wave device comprising an interdigital transducer having omitted fingers 失效
标题翻译：表面声波装置包括具有省略的指状物的指指式换能器
公开(公告)号：US4464597A
公开(公告)日：1984-08-07
申请号：US343175
申请日：1982-01-27
申请人： Kentaro Setsune
发明人： Kentaro Setsune
IPC分类号： H03H9/02 , H03H9/145 , H01L41/04
CPC分类号： H03H9/14505
摘要： A withdrawal transducer structure is employed in a narrow-band surface acoustic wave device requiring many pairs of interdigital transducer fingers or in a high-frequency surface acoustic wave device in which the thickness of interdigital transducer fingers is large relative to the wavelength of the surface acoustic wave, so that the interdigital transducer fingers may not severely adversely affect the characteristics of the device. The interdigital transducer fingers in the input and output piezoelectric transducers are suitably partly omitted leaving some of them or dummy fingers are additionally provided to eliminate the adverse effect of the interdigital transducer fingers on the characteristics of the device, so that the narrow-band or high-frequency surface acoustic wave device can operate with improved performance without having any unnecessary frequency response.
摘要翻译：在需要多对叉指式换能器指状物或高频表面声波装置的窄带声表面波装置中采用取出换能器结构，其中叉指换能器指状物的厚度相对于表面声波的波长较大使得叉指式传感器手指不会严重不利地影响装置的特性。输入和输出压电换能器中的叉指传感器指状部分被省略，留下其中一些或虚设手指，以消除叉指式换能器手指对装置的特性的不利影响，使得窄带或高 - 频率声表面波器件可以以改进的性能工作，而不会产生任何不必要的频率响应。

20. 发明授权

US06360111B1 High-frequency circuit element having a superconductive resonator with an electroconductive film about the periphery 有权
标题翻译：具有超导谐振器的高频电路元件，其周围具有导电膜
公开(公告)号：US06360111B1
公开(公告)日：2002-03-19
申请号：US09415117
申请日：1999-10-08
申请人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
发明人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
IPC分类号： H01P708
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译：在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和所述输入输出端子（13）形成为相对的。通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。

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