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11. 发明申请

US20070256704A1 METHOD AND APPARATUS FOR IMPROVED OPERATION OF AN ABATEMENT SYSTEM 审中-公开
标题翻译：改进运算系统的方法和装置
公开(公告)号：US20070256704A1
公开(公告)日：2007-11-08
申请号：US11686005
申请日：2007-03-14
申请人： Peter Porshnev , Mark Curry , Sebastien Raoux
发明人： Peter Porshnev , Mark Curry , Sebastien Raoux
IPC分类号： B08B6/00 , B08B3/00 , B08B7/04
CPC分类号： F04B49/00
摘要： In one aspect, an apparatus is provided that includes (1) an interface adapted to analyze information about an electronic device manufacturing system that produces an effluent having an undesirable material, and provide information about the effluent, and (2) an abatement system adapted to receive information about the effluent, receive the effluent, and attenuate the undesirable material. Numerous other aspects are provided.
摘要翻译：一方面，提供了一种装置，其包括（1）适于分析关于产生具有不期望的材料的流出物的电子装置制造系统的信息并且提供关于流出物的信息的界面的界面，以及（2）适于接收有关废水的信息，接收废水，并减少不需要的物料。提供了许多其他方面。

12. 发明申请

US20070172398A1 METHODS AND APPARATUS FOR MANUFACTURING A PROCESS ABATEMENT REACTOR 失效
标题翻译：制造过程回收反应器的方法和装置
公开(公告)号：US20070172398A1
公开(公告)日：2007-07-26
申请号：US11555056
申请日：2006-10-31
申请人： Daniel Clark , Sebastien Raoux , Robert Vermeulen , Shaun Crawford
发明人： Daniel Clark , Sebastien Raoux , Robert Vermeulen , Shaun Crawford
IPC分类号： B01D53/34 , B01D50/00 , F23M9/00 , B32B27/02
CPC分类号： B01D53/38 , B01D53/68 , B01D53/74 , B01D53/79 , B01D53/8659 , B01D53/8662 , B01D2251/104 , B01D2251/106 , B01D2251/2062 , B01D2258/0216 , C23C16/4412 , F23C7/02 , F23D2900/00016 , F23G7/065 , F23M5/00
摘要： In certain embodiments, methods, systems, and apparatus are provided for use in removing pollutants from a gas stream. The invention includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings. A first of the porous ceramic rings has a first coefficient of thermal expansion (CTE) and a second of the porous ceramic rings has a second CTE. Numerous other aspects are provided.
摘要翻译：在某些实施例中，提供了用于从气流中去除污染物的方法，系统和装置。本发明包括由多个层叠的多孔陶瓷环形成的热反应单元。多孔陶瓷环中的第一个具有第一热膨胀系数（CTE），并且第二个多孔陶瓷环具有第二CTE。提供了许多其他方面。

13. 发明授权

US06517913B1 Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions 失效
标题翻译：从底物处理设备排放物减少全氟化合物气体的方法和装置
公开(公告)号：US06517913B1
公开(公告)日：2003-02-11
申请号：US09632502
申请日：2000-08-03
申请人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
发明人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
IPC分类号： C23C1644
CPC分类号： H01J37/32844 , B01D45/06 , B01D53/32 , B01D53/46 , B01D2257/206 , B01D2259/818 , B01J19/08 , B01J19/088 , B01J19/126 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , H01J37/3244 , H01J2237/022 , H05H1/46 , H05H2001/4622 , H05H2001/4667 , H05H2245/1215 , Y02C20/30 , Y02P70/605
摘要： An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.
摘要翻译：用于将从半导体处理设备排出的PFC气体转化为较少有害的非PFC气体的设备。该装置的一个实施例包括硅滤波器和等离子体产生系统。等离子体发生系统从流出的PFC气体形成等离子体。来自等离子体的成分与过滤器中的硅和/或氧反应，并将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。另一实施例包括等离子体产生系统和颗粒捕集和收集系统。颗粒捕集和收集系统从产生这种残余物的沉积过程中捕集含硅残渣，等离子体产生系统从流出的PFC气体形成等离子体。来自等离子体的成分与收集的残余物反应，将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。

14. 发明授权

US06041734A Use of an asymmetric waveform to control ion bombardment during substrate processing 失效
标题翻译：使用不对称波形来控制衬底处理过程中的离子轰击
公开(公告)号：US06041734A
公开(公告)日：2000-03-28
申请号：US982252
申请日：1997-12-01
申请人： Sebastien Raoux , Mandar Mudholkar
发明人： Sebastien Raoux , Mandar Mudholkar
IPC分类号： H05H1/46 , C23C16/26 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/509 , C23C16/515 , C23C16/517 , H01J37/32 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/4557 , C23C16/5096 , C23C16/515 , C23C16/517 , H01J37/32082 , H01J37/32165 , H01J37/32706
摘要： A substrate processing system that includes a deposition chamber having a reaction zone, first and second electrodes, a mixed frequency RF power supply including a low frequency RF power source and a high frequency RF power source. The high frequency RF power supply provides enough power to form a plasma from a process gas introduced into the reaction zone and the low frequency RF power supply is configured to supply an asymmetrical waveform to either said first or second electrodes to bias the plasma toward the substrate.
摘要翻译：一种衬底处理系统，包括具有反应区，沉积室，第一和第二电极，包括低频RF电源和高频RF电源的混合频率RF电源。高频RF电源提供足够的功率以从引入反应区的工艺气体形成等离子体，并且低频RF电源被配置为向所述第一或第二电极提供非对称波形以将等离子体偏压到衬底。

15. 发明申请

US20080014134A1 METHODS AND APPARATUS FOR PFC ABATEMENT USING A CDO CHAMBER 审中-公开
公开(公告)号：US20080014134A1
公开(公告)日：2008-01-17
申请号：US11838521
申请日：2007-08-14
申请人： Sebastien Raoux , Kuo-Chen Lin , Robbert Vermeulen , Daniel Clark , Stephen Tsu , Mehran Moalem , Allen Fox , Monique McIntosh , Joshua Putz , Eric Rieske , Poh Lee
发明人： Sebastien Raoux , Kuo-Chen Lin , Robbert Vermeulen , Daniel Clark , Stephen Tsu , Mehran Moalem , Allen Fox , Monique McIntosh , Joshua Putz , Eric Rieske , Poh Lee
IPC分类号： C07C1/00 , C01B7/20
CPC分类号： B01D53/8662 , B01D2257/2066 , C01B7/20 , Y02C20/30 , Y02P20/154
摘要： In some aspects, a method is provided for abating perfluorocarbons (PFCs) in a gaseous waste abatement system having a pre-installed controlled decomposition oxidation (CDO) thermal reaction chamber. The method that includes (1) providing a catalyst bed within the CDO thermal reaction chamber; and (2) introducing a gaseous waste stream into the CDO thermal reaction chamber so as to expose the gaseous waste stream to the catalyst bed. Numerous other aspects are provided.

16. 发明申请

US20070172399A1 METHODS AND APPARATUS FOR SENSING CHARACTERISTICS OF THE CONTENTS OF A PROCESS ABATEMENT REACTOR 失效
标题翻译：过程回收反应器内部感应特性的方法与装置
公开(公告)号：US20070172399A1
公开(公告)日：2007-07-26
申请号：US11555000
申请日：2006-10-31
申请人： Daniel Clark , Sebastien Raoux , Robert Vermeulen , Shaun Crawford
发明人： Daniel Clark , Sebastien Raoux , Robert Vermeulen , Shaun Crawford
IPC分类号： B01D53/34
CPC分类号： B01D53/38 , B01D53/68 , B01D53/74 , B01D53/79 , B01D53/8659 , B01D53/8662 , B01D2251/104 , B01D2251/106 , B01D2251/2062 , B01D2258/0216 , C23C16/4412 , F23C7/02 , F23D2900/00016 , F23G7/065 , F23M5/00
摘要： In certain embodiments, an apparatus is provided for use in removing pollutants from a gas stream. The apparatus includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings. At least one of the stacked ceramic sections may be adapted to allow sensing of a characteristic of contents of the central chamber. In some embodiments, waste gas inlets to the thermal reaction unit may be angled to create a helical vortex within the thermal reaction unit. Other aspects are provided.
摘要翻译：在某些实施方案中，提供了用于从气流中除去污染物的装置。该装置包括由多个堆叠的多孔陶瓷环形成的热反应单元。堆叠的陶瓷部分中的至少一个可以适于允许感测中央室的内容物的特性。在一些实施例中，到热反应单元的废气入口可以成角度以在热反应单元内产生螺旋涡流。提供其他方面。

17. 发明授权

US06888639B2 In-situ film thickness measurement using spectral interference at grazing incidence 失效
标题翻译：原位薄膜厚度测量采用光谱干涉进行放牧
公开(公告)号：US06888639B2
公开(公告)日：2005-05-03
申请号：US09963048
申请日：2001-09-24
申请人： Andreas Goebel , Moshe Sarfaty , Sebastien Raoux
发明人： Andreas Goebel , Moshe Sarfaty , Sebastien Raoux
IPC分类号： G01B11/06 , G01N21/84 , G01N21/95 , H01L21/66 , G01B11/02 , G01B9/02
CPC分类号： H01L22/26 , G01B11/0675 , G01N21/8422 , G01N21/9501 , H01L22/12
摘要： A method and system using spectral interference of light from plasma emissions collected at near grazing incidence to in-situ monitor and control the film thickness of a non-opaque film. Embodiments of this invention are particularly useful to all substrate processing chambers equipped to form an in-situ plasma within the chamber and which are used to deposit or etch non-opaque films. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to deposit a non-opaque film on a wafer substrate within the chamber. During the plasma deposition process, a plurality of wavelengths of radiation including those reflected from the top and bottom layer of the film being deposited upon a wafer surface are collected through an existing viewport, and conveyed to a spectrometer for measurements via an optical fiber attached near this viewport. These measurements are analyzed to determine the film's thickness. An alternate embodiment of the method of the present invention uses an interference filter to confine the spectral composition of the plasma emissions to an emission at a narrow wavelength interval and a photodiode to detect the intensity of the emission.
摘要翻译：一种方法和系统，利用近场放射采集的等离子体发射光的光谱干涉进行原位监测和控制非不透明膜的膜厚度。本发明的实施例对于所有衬底处理腔室特别有用，所述衬底处理腔室在室内形成原位等离子体，并用于沉积或蚀刻非不透明膜。本发明方法的一个实施例在衬底处理室内形成等离子体，以将非不透明膜沉积在腔室内的晶片衬底上。在等离子体沉积过程中，包括从沉积在晶片表面上的膜的顶层和底层反射的多个辐射波长通过现有的视口被收集，并通过附近的光纤被传送到光谱仪进行测量这个视口。分析这些测量结果以确定膜的厚度。本发明方法的替代实施例使用干涉滤波器来限制等离子体发射的光谱组成与窄波长间隔的发射和光电二极管以检测发射的强度。

18. 发明授权

US6162709A Use of an asymmetric waveform to control ion bombardment during substrate processing 有权
公开(公告)号：US6162709A
公开(公告)日：2000-12-19
申请号：US481985
申请日：2000-01-11
申请人： Sebastien Raoux , Mandar Mudholkar
发明人： Sebastien Raoux , Mandar Mudholkar
IPC分类号： H05H1/46 , C23C16/26 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/509 , C23C16/515 , C23C16/517 , H01J37/32 , H01L21/31 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/4557 , C23C16/5096 , C23C16/515 , C23C16/517 , H01J37/32082 , H01J37/32165 , H01J37/32706
摘要： A substrate processing system that includes a deposition chamber having a reaction zone, first and second electrodes, a mixed frequency RF power supply including a low frequency RF power source and a high frequency RF power source. The high frequency RF power supply provides enough power to form a plasma from a process gas introduced into the reaction zone and the low frequency RF power supply is configured to supply an asymmetrical waveform to either said first or second electrodes to bias the plasma toward the substrate.

19. 发明授权

US6098568A Mixed frequency CVD apparatus 失效
标题翻译：混合频率CVD装置
公开(公告)号：US6098568A
公开(公告)日：2000-08-08
申请号：US980520
申请日：1997-12-01
申请人： Sebastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
发明人： Sebastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
IPC分类号： H05H1/46 , C23C16/505 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/31 , C23C16/00
CPC分类号： H01J37/32174 , C23C16/5096 , C23C16/517 , H01J37/32082
摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.
摘要翻译：一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

20. 发明授权

US5319653A Integrated optical component structure 失效
标题翻译：集成光学元件结构
公开(公告)号：US5319653A
公开(公告)日：1994-06-07
申请号：US979659
申请日：1992-11-19
申请人： Pierre-Noel Favennec , Helene L'Haridon , Danielle Moutonnet , Albert Barriere , Sebastien Raoux , Bruno Nombelli
发明人： Pierre-Noel Favennec , Helene L'Haridon , Danielle Moutonnet , Albert Barriere , Sebastien Raoux , Bruno Nombelli
IPC分类号： H01S3/16 , C09K11/77 , C09K11/85 , G02B6/122 , H01S3/06 , H01S3/063 , H01S3/30
CPC分类号： C09K11/7705 , G02B6/122 , H01S3/063 , H01S3/1608 , H01S3/163
摘要： An integrated optical component structure designed to operate at a rare earth ion fluorescence wavelength .lambda..sub.1 comprises at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M.sub.1-y M'.sub.y F.sub.2)-x TRF.sub.z deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF.sub.z denotes a rare earth fluoride, x is in the range ]0,1[ and y is in the range [0,1]. The component structure finds applications in telecommunications using optical waveguides.
摘要翻译：设计为以稀土离子荧光波长λ1工作的集成光学部件结构至少包括具有式（1-x）（M1-y M'y F2）-x的混合稀土氟化物固溶体的至少一薄层 TRFz沉积在单晶半导体材料的衬底上，其中M和M'表示碱土金属离子，TRFz表示稀土氟化物，x在[0,1]范围内，y在[0,1]的范围内。组件结构在光通信中使用光波导应用。

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