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11. 发明申请

US20100297849A1 PLASMA ETCHING METHOD FOR ETCHING AN OBJECT 审中-公开
标题翻译：用于蚀刻对象的等离子体蚀刻方法
公开(公告)号：US20100297849A1
公开(公告)日：2010-11-25
申请号：US12512084
申请日：2009-07-30
申请人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
发明人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01L21/31144
摘要： The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.
摘要翻译：本发明提供一种能够抑制待蚀刻物体的开口弯曲的等离子体蚀刻方法，并且解决了在具有高纵横比的深孔加工中在高纵横比部分缺少开口。在等离子体蚀刻装置中使用图案化并形成在待蚀刻对象上的掩模来蚀刻待蚀刻物体的等离子体蚀刻方法包括：顺序地执行用于蚀刻掩模的第一步骤，同时将沉积物附着在靠近使用碳氟化合物气体CxFy（x = 1,2,3,4,5,6，y = 4,5,6,8）的掩模的掩模图案的表面，以及蚀刻被蚀刻物体的第二步骤同时使用碳氟化合物气体除去附着在开口的侧壁附近的沉积物的掩模图案的表面附近的沉积物。

12. 发明授权

US07842619B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07842619B2
公开(公告)日：2010-11-30
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/00
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： A plasma processing method includes etching an insulating film of a sample to be processed using plasma generated from etching gas, supplying a large flow of inert gas from above the sample while having the sample mounted on a sample mounting stage, supplying deposit removal gas to only an area near a side wall of a processing chamber, and controlling a plasma density distribution to thereby vary a plasma density at a center area of the processing chamber and a plasma density at an area near the side wall of the processing chamber so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译：等离子体处理方法包括使用蚀刻气体产生的等离子体对待处理样品的绝缘膜进行蚀刻，同时将样品安装在样品安装台上，从样品安装台提供大量惰性气体，仅向其提供沉积物去除气体处理室的侧壁附近的区域，并且控制等离子体密度分布，从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的等离子体密度，以便执行用于去除沉积在处理室的侧壁上的膜的沉积膜去除工艺。

13. 发明申请

US20100029024A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20100029024A1
公开(公告)日：2010-02-04
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： The invention provides a plasma processing method capable of reducing the damage applied to the low-k film or the underlayer. The method uses a plasma processing apparatus comprising gas supply means 41, 42 for respectively supplying processing gas independently to a center area of the processing chamber 1 and to an area near the sidewall thereof; a sample mounting electrode 13 for mounting a sample W to be processed; a high frequency power supply 21 for generating plasma; an antenna 11; and a plasma generating means 17 for generating plasma in the processing chamber; the method comprising etching an insulating film on the sample W using plasma; and supplying a large flow of inert gas from the center area of the chamber while having the sample W mounted on the sample mounting electrode 13, supplying deposit removal gas to only the area near the side wall of the processing chamber 1 and controlling the plasma density distribution to thereby vary the plasma density at the center area of the processing chamber and the plasma density at the area near the side wall of the processing chamber, so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译：本发明提供一种等离子体处理方法，其能够降低对低k膜或底层施加的损伤。该方法使用包括气体供给装置41,42的等离子体处理装置，用于分别独立地向处理室1的中心区域供应处理气体，并且分配到其侧壁附近的区域; 用于安装待处理样品W的样品安装电极13; 用于产生等离子体的高频电源21; 天线11; 以及用于在处理室中产生等离子体的等离子体产生装置17; 该方法包括使用等离子体蚀刻样品W上的绝缘膜; 并且在将样品W安装在样品安装电极13上的同时，从室的中心区域供给大量惰性气体，仅将沉积物去除气体提供给处理室1的侧壁附近的区域，并控制等离子体密度从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的区域的等离子体密度，从而进行沉积膜去除工艺，以去除沉积在侧壁上的膜处理室。

14. 发明授权

US08955579B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08955579B2
公开(公告)日：2015-02-17
申请号：US13091770
申请日：2011-04-21
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： F28D15/00 , F25D23/12 , F25B39/02 , H01L21/336 , H01L21/24 , H01L21/40 , C23C16/00 , H01L21/67
CPC分类号： F25B39/02 , F28F2210/02 , H01J2237/2001 , H01L21/67109
摘要： There is provided a means for uniformly controlling the in-plane temperature of a semiconductor wafer at high speed in a high heat input etching process. A refrigerant channel structure in a circular shape is formed in a sample stage. Due to a fact that a heat transfer coefficient of a refrigerant is largely changed from a refrigerant supply port to a refrigerant outlet port, the cross sections of the channel structure is structured so as to be increased from a first channel areas towards a second channel areas in order to make the heat transfer coefficient of the refrigerant constant in the refrigerant channel structure. Thereby, the heat transfer coefficient of the refrigerant is prevented from increasing by reducing the flow rate of the refrigerant at a dry degree area where the heat transfer coefficient of the refrigerant is increased. Further, the cross section of the channel structure is structured so as to be reduced from the second channel areas towards a third channel areas, and thereby the heat transfer coefficient of the refrigerant is prevented from decreasing. Accordingly, the heat transfer coefficient of the refrigerant can be uniformed in the channel structure.
摘要翻译：提供了一种用于在高热输入蚀刻工艺中高速均匀地控制半导体晶片的面内温度的装置。在样品台中形成圆形的制冷剂流路结构。由于制冷剂的传热系数从制冷剂供给口向制冷剂排出口发生很大的变化，所以，通道结构的横截面被构造成从第一通道区域向第二通道区域以使制冷剂流路结构中的制冷剂的传热系数恒定。因此，通过降低制冷剂的传热系数增加的干燥区域的制冷剂的流量，可以防止制冷剂的传热系数增加。此外，通道结构的横截面被构造成从第二通道区域朝向第三通道区域减小，从而防止制冷剂的传热系数降低。因此，制冷剂的传热系数可以在通道结构中均匀化。

15. 发明授权

US08397668B2 Plasma processing apparatus 有权
公开(公告)号：US08397668B2
公开(公告)日：2013-03-19
申请号：US12398226
申请日：2009-03-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

16. 发明申请

US20120211163A1 PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体处理装置，其中包括蚀刻加工装置和使用等离子体加工装置的匀浆加工装置和等离子体处理方法
公开(公告)号：US20120211163A1
公开(公告)日：2012-08-23
申请号：US13457082
申请日：2012-04-26
申请人： Hiroyuki KOBAYASHI , Masaru Izawa
发明人： Hiroyuki KOBAYASHI , Masaru Izawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/335 , H01L21/67207 , H01L21/68735 , H01L21/68785 , Y10S156/915
摘要： A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
摘要翻译：灰化处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于客观物品的直径。

17. 发明授权

US08142567B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08142567B2
公开(公告)日：2012-03-27
申请号：US12392127
申请日：2009-02-25
申请人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Makoto Nawata
发明人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Makoto Nawata
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4412
摘要： A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilted in a direction opposite the direction of the rotary blade of the turbo-molecular pump on the outer circumference of the member.
摘要翻译：真空处理装置包括具有形成在排气系统的压力调节阀和涡轮分子泵之间的中心的气体通道的构件和具有多个静止叶片的颗粒分散防止单元，所述多个固定叶片形成为沿相反方向倾斜涡轮分子泵的旋转叶片在构件的外周上的方向。

18. 发明申请

US20110132541A1 VACUUM PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS WITH TEMPERATURE CONTROL FUNCTION FOR WAFER STAGE 有权
标题翻译：具有温度控制功能的真空加工设备和等离子体加工设备
公开(公告)号：US20110132541A1
公开(公告)日：2011-06-09
申请号：US12696552
申请日：2010-01-29
申请人： Takumi TANDOU , Masaru Izawa
发明人： Takumi TANDOU , Masaru Izawa
IPC分类号： H01L21/465
CPC分类号： H01L21/67109 , H01L21/67017
摘要： A wafer stage includes a first evaporator where a refrigerant circulates. The first evaporator makes up a cooling cycle with a compressor, first condenser, expansion valve, second evaporator, refrigerant thermometer, and refrigerant flowmeter. The first condenser is supplied with a heat exchange medium. The temperature of a coolant supplied to the second evaporator is measured by an inlet refrigerant thermometer and outlet refrigerant thermometer, while the flow rate of the coolant is monitored and adjusted by a flow-rate adjuster. The temperature difference in the coolant between being at the inlet and at the outlet and flow rate can be measured. Upon complete evaporation of the refrigerant in the second evaporator, the dryness of the refrigerant discharged from the wafer stage is calculated from the amount of heat absorbed from (exchanged with) the coolant, the circulation amount of the refrigerant and the refrigerant temperature to control the rotational speed of the compressor.
摘要翻译：晶片台包括制冷剂循环的第一蒸发器。第一蒸发器与压缩机，第一冷凝器，膨胀阀，第二蒸发器，制冷剂温度计和制冷剂流量计构成冷却循环。第一冷凝器配有热交换介质。通过入口制冷剂温度计和出口制冷剂温度计测量供应到第二蒸发器的冷却剂的温度，同时通过流速调节器监测和调节冷却剂的流量。可以测量在入口和出口处的冷却剂的温度差和流量。在第二蒸发器中制冷剂完全蒸发时，从冷却剂的吸收热量，制冷剂的循环量和制冷剂的温度来计算从晶片台排出的制冷剂的干度，以控制压缩机的转速。

19. 发明申请

US20100326094A1 PLASMA PROCESSING APPARATUS AND MAINTENANCE METHOD THEREFOR 有权
标题翻译：等离子体加工设备及其维护方法
公开(公告)号：US20100326094A1
公开(公告)日：2010-12-30
申请号：US12538986
申请日：2009-08-11
申请人： Takumi TANDOU , Masaru Izawa
发明人： Takumi TANDOU , Masaru Izawa
IPC分类号： F25B45/00 , H01L21/3065 , F25B19/00
CPC分类号： H01J37/32091 , F25B45/00 , F25B2500/06 , H01J2237/2001
摘要： In a plasma processing apparatus, a check valve is installed close to a refrigerant inlet of a compressor. When performing maintenance of a sample stage, refrigerant collected from a refrigerant flow path is temporarily stored in a flow path section extending from an expansion valve to the check valve, making it possible to perform the maintenance without changing the amount of refrigerant in the refrigerating cycle. With a refrigerant storage tank, a refrigerant supply valve, and a refrigerant discharge valve included in the refrigerating cycle, when maintenance of the compressor, a condenser, or the expansion valve is performed, the refrigerant collected from the refrigerating cycle can be put in use again.
摘要翻译：在等离子体处理装置中，止回阀安装在压缩机的制冷剂入口附近。在对样品台进行维护时，从制冷剂流路收集的制冷剂暂时存储在从膨胀阀向止回阀延伸的流路部中，能够不改变制冷循环中的制冷剂量而进行维护。在冷冻循环中包括的制冷剂储存箱，制冷剂供给阀和制冷剂排出阀中，当执行压缩机，冷凝器或膨胀阀的维护时，可以使用从制冷循环中收集的制冷剂再次。

20. 发明授权

US07767054B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07767054B2
公开(公告)日：2010-08-03
申请号：US11213737
申请日：2005-08-30
申请人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Tomoyuki Tamura , Kenji Maeda
发明人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Tomoyuki Tamura , Kenji Maeda
IPC分类号： C23F1/00
CPC分类号： H01J37/32642 , C23F4/00 , H01J37/32009 , H01J37/32532 , H01L21/02087 , H01L21/67109 , H01L21/6831 , H01L21/68707 , H01L21/68742
摘要： A plasma processing apparatus includes a vacuum processing chamber, supplying means for introducing a processing gas into the vacuum processing chamber, a mounting electrode in the vacuum processing chamber for mounting a specimen on the mounting electrode, and a pusher pin for raising the specimen placed on the mounting electrode and holding the specimen over the mounting electrode, wherein the mounting electrode includes an inner area for mounting the specimen, an outer area for mounting a focus ring, and a high-frequency power source for supplying electric power to the inner area and the outer area, and wherein high-frequency electric power is applied to the outer area to generate plasma at the outer edge of the backside of the specimen while the specimen is raised with the pusher pin.
摘要翻译：等离子体处理装置包括真空处理室，将处理气体导入真空处理室的供给单元，将真空室内的试样安装在真空处理室内的安装电极，以及将试样放置在所述安装电极将所述试样保持在所述安装电极上，其中所述安装电极包括用于安装所述试样的内部区域，用于安装聚焦环的外部区域和用于向所述内部区域供电的高频电源，外部区域，并且其中高频电力施加到外部区域，以在样本被推动销升高的同时在试样的背面的外边缘处产生等离子体。

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