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11. 发明申请

US20060222031A1 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US20060222031A1
公开(公告)日：2006-10-05
申请号：US11387986
申请日：2006-03-24
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

12. 发明申请

US20060222030A1 Optical semiconductor device, manufacturing method therefor, and optical semiconductor apparatus 有权
标题翻译：光半导体装置及其制造方法以及光半导体装置
公开(公告)号：US20060222030A1
公开(公告)日：2006-10-05
申请号：US11349172
申请日：2006-02-08
申请人： Kazunori Saitoh , Hiroshi Hamada
发明人： Kazunori Saitoh , Hiroshi Hamada
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/48091 , H01L2224/48465 , H01S5/02212 , H01S5/02461 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/34326 , H01L2924/00014 , H01L2924/00
摘要： A highly reliable optical semiconductor device insusceptible to degradation in the characteristics thereof. An n-type buffer layer, n-type first cladding layer, active layer, a p-type first layer of the second cladding layer, p-type etch-stop layer, p-type second layer of the second cladding layer, and p-type contact layer are formed an n-type semiconductor substrate. Two lengths of separation grooves are formed in parallel in such a way as to reach the underside of the p-type second layer of the second cladding layer from the top face of the contact layer, and a ridge is formed between the respective separation grooves. The ridge comprises a lower portion thereof, made up of the second layer of the second cladding layer, and a portion of the contact layer, corresponding to the ridge, made up of the contact layer. Side parts of the top face of the portion of the contact layer, corresponding to the ridge, facing the separation grooves, respectively, are turned to tilted faces, respectively, and a barrier metal layer is formed on top of the tilted faces. Portions extending from side faces of the lower portion of the ridge to run across the respective separation grooves are covered with an insulating film. Since the tilted faces are formed at the respective side parts of the top face of the portion of the contact layer, no stepping occurs to the barrier metal layer. Accordingly, Au of an Au layer formed outside of the barrier metal layer is prevented from being diffused into the portion of the contact layer, corresponding to the ridge, made of GaAs, through steeped parts of the barrier metal layer.
摘要翻译：高度可靠的光学半导体器件，其特性不易降解。 n型缓冲层，n型第一覆层，有源层，第二覆层的p型第一层，p型蚀刻停止层，第二覆层的p型第二层和p 型接触层形成为n型半导体衬底。从接触层的顶面到达第二包覆层的p型第二层的下侧的方式平行地形成两段分隔槽，在各分离槽之间形成有脊。脊包括由第二覆层的第二层构成的下部，以及由接触层构成的与脊相对应的接触层的一部分。接触层的分别对应于脊的部分的顶面的侧面分别转向倾斜面，并且在倾斜面的顶部上形成阻挡金属层。从脊的下部的侧面延伸穿过相应的分隔槽的部分被绝缘膜覆盖。由于倾斜面形成在接触层的部分的顶面的各个侧部，所以不会对阻挡金属层发生阶梯。因此，通过阻挡金属层的浸渍部分，防止形成在阻挡金属层外侧的Au层的Au扩散到对应于由GaAs制成的脊的接触层的部分中。

13. 发明授权

US4611339A Method and apparatus for removal of impure gases at time of scrap preheating 失效
标题翻译：废料预热时除去不纯气体的方法和装置
公开(公告)号：US4611339A
公开(公告)日：1986-09-09
申请号：US543974
申请日：1983-11-14
申请人： Kazunori Saitoh
发明人： Kazunori Saitoh
IPC分类号： C21C5/56 , F27D13/00 , F27D17/00
CPC分类号： C21C5/565 , F27D13/002 , F27D17/003 , Y02P10/216
摘要： A method of preheating scrap metal with impure gases discharging from a metallurgical vessel includes the steps of conducting a first portion of the gases to a container of scrap metal, contacting the scrap metal with the gases for preheating the same whereby additional impurities are generated, withdrawing the impure gases after contact with the scrap metal and mixing the same with a second portion of impure gases from the metallurgical vessel, thermally cracking the mixture in a combustion chamber to remove impurities and thereafter removing particular matter from the gases prior to the discharge to the atmosphere.
摘要翻译：一种用于从冶金容器排出的不纯气体预热废金属的方法包括以下步骤：将第一部分气体导入废金属容器，使废金属与气体接触，以预热其中，从而产生附加的杂质，取出与废金属接触之后的不纯气体并将其与来自冶金容器的不纯气体的第二部分混合，将燃烧室中的混合物热裂解以除去杂质，然后在排放到大气层。

14. 发明申请

US20090041076A1 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US20090041076A1
公开(公告)日：2009-02-12
申请号：US12232652
申请日：2008-09-22
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S5/00
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than 50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

15. 发明授权

US07463662B2 Optical semiconductor device, manufacturing method therefor, and optical semiconductor apparatus 有权
标题翻译：光半导体装置及其制造方法以及光半导体装置
公开(公告)号：US07463662B2
公开(公告)日：2008-12-09
申请号：US11349172
申请日：2006-02-08
申请人： Kazunori Saitoh , Hiroshi Hamada
发明人： Kazunori Saitoh , Hiroshi Hamada
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/48091 , H01L2224/48465 , H01S5/02212 , H01S5/02461 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/34326 , H01L2924/00014 , H01L2924/00
摘要： A highly reliable optical semiconductor device insusceptible to degradation in the characteristics thereof. An n-type buffer layer, n-type first cladding layer, active layer, a p-type first layer of the second cladding layer, p-type etch-stop layer, p-type second layer of the second cladding layer, and p-type contact layer are formed an n-type semiconductor substrate. Two lengths of separation grooves are formed in parallel in such a way as to reach the underside of the p-type second layer of the second cladding layer from the top face of the contact layer, and a ridge is formed between the respective separation grooves. The ridge comprises a lower portion thereof, made up of the second layer of the second cladding layer, and a portion of the contact layer, corresponding to the ridge, made up of the contact layer. Side parts of the top face of the portion of the contact layer, corresponding to the ridge, facing the separation grooves, respectively, are turned to tilted faces, respectively, and a barrier metal layer is formed on top of the tilted faces. Portions extending from side faces of the lower portion of the ridge to run across the respective separation grooves are covered with an insulating film. Since the tilted faces are formed at the respective side parts of the top face of the portion of the contact layer, no stepping occurs to the barrier metal layer. Accordingly, Au of an Au layer formed outside of the barrier metal layer is prevented from being diffused into the portion of the contact layer, corresponding to the ridge, made of GaAs, through steeped parts of the barrier metal layer.
摘要翻译：高度可靠的光学半导体器件，其特性不易降解。 n型缓冲层，n型第一覆层，有源层，第二覆层的p型第一层，p型蚀刻停止层，第二覆层的p型第二层和p 型接触层形成为n型半导体衬底。从接触层的顶面到达第二包覆层的p型第二层的下侧的方式平行地形成两段分隔槽，在各分离槽之间形成有脊。脊包括由第二覆层的第二层构成的下部，以及由接触层构成的与脊相对应的接触层的一部分。接触层的分别对应于脊的部分的顶面的侧面分别转向倾斜面，并且在倾斜面的顶部上形成阻挡金属层。从脊的下部的侧面延伸穿过相应的分隔槽的部分被绝缘膜覆盖。由于倾斜面形成在接触层的部分的顶面的各个侧部，所以不会对阻挡金属层发生阶梯。因此，通过阻挡金属层的浸渍部分，防止形成在阻挡金属层外侧的Au层的Au扩散到对应于由GaAs制成的脊的接触层的部分中。

16. 发明申请

US20050285862A1 Semiconductor device and semiconductor signal processing apparatus 失效
标题翻译：半导体装置及半导体信号处理装置
公开(公告)号：US20050285862A1
公开(公告)日：2005-12-29
申请号：US11148369
申请日：2005-06-09
申请人： Hideyuki Noda , Kazunori Saitoh , Kazutami Ariomoto , Katsumi Dosaka
发明人： Hideyuki Noda , Kazunori Saitoh , Kazutami Ariomoto , Katsumi Dosaka
IPC分类号： G06F15/16 , G11C7/10
CPC分类号： G11C7/1006
摘要： A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width.
摘要翻译：存储单元垫被分成多个条目，并且对应于每个条目布置了算术逻辑单元。在条目和相应的算术逻辑单元之间，以比特串行和并行方式执行算术/逻辑运算。在并行操作不是非常有效的情况下，数据以串行和位并行方式传送到设置在存储器垫的下部的一组处理器。以这种方式，无论操作内容或数据位宽度如何，都可以高速处理大量的数据。

17. 发明授权

US4492567A Method of removal of impure gases at the time of scrap preheating, and equipment for use of same 失效
标题翻译：在废料预热时除去不纯气体的方法及其使用的设备
公开(公告)号：US4492567A
公开(公告)日：1985-01-08
申请号：US543988
申请日：1983-10-20
申请人： Kazunori Saitoh
发明人： Kazunori Saitoh
IPC分类号： H04B17/40 , C21C5/56 , F23J15/00 , F27D13/00 , F27D17/00 , F24H7/00 , B01D47/00
CPC分类号： C21C5/565 , F23J15/006 , F27D13/002 , F27D17/008 , F23J2217/101 , F23J2219/40 , Y02P10/216
摘要： A method and apparatus for preheating scrap metal within pure gases discharged from a metallurgical vessel. The method comprises the steps of burning the gases in a combustion chamber to remove impurities therefrom, conducting a first portion of the combustion products to a container of scrap metal, contacting the scrap metal with the combustion products for preheating the scrap metal whereby additional impurities are generated, washing in a wet scrubber the mixture of combustion products and additional impurities, mixing the scrubbed combustion products and additional impurities with a second portion of the combustion products from the combustion chamber, and removing particulates from the mixture.
摘要翻译：一种在从冶金容器排出的纯气体中预热废金属的方法和装置。该方法包括以下步骤：在燃烧室中燃烧气体以除去杂质，将燃烧产物的第一部分导入废金属容器，使废金属与燃烧产物接触，以预热废金属，由此附加的杂质为在湿式洗涤器中洗涤燃烧产物和附加杂质的混合物，将来自燃烧室的燃烧产物的第二部分的洗涤的燃烧产物和另外的杂质混合，并从混合物中除去微粒。

18. 发明申请

US20100308858A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SIGNAL PROCESSING APPARATUS 失效
标题翻译：半导体器件和半导体信号处理装置
公开(公告)号：US20100308858A1
公开(公告)日：2010-12-09
申请号：US12857063
申请日：2010-08-16
申请人： Hideyuki NODA , Kazunori Saitoh , Kazutami Ariomoto , Katsumi Dosaka
发明人： Hideyuki NODA , Kazunori Saitoh , Kazutami Ariomoto , Katsumi Dosaka
IPC分类号： H03K19/003
CPC分类号： G11C7/1006
摘要： A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width.
摘要翻译：存储单元垫被分成多个条目，并且对应于每个条目布置了算术逻辑单元。在条目和相应的算术逻辑单元之间，以比特串行和并行方式执行算术/逻辑运算。在并行操作不是非常有效的情况下，数据以串行和位并行方式传送到设置在存储器垫的下部的一组处理器。以这种方式，无论操作内容或数据位宽度如何，都可以高速处理大量的数据。

19. 发明授权

US07791962B2 Semiconductor device and semiconductor signal processing apparatus 失效
标题翻译：半导体装置及半导体信号处理装置
公开(公告)号：US07791962B2
公开(公告)日：2010-09-07
申请号：US12213131
申请日：2008-06-16
申请人： Hideyuki Noda , Kazunori Saitoh , Kazutami Ariomoto , Katsumi Dosaka
发明人： Hideyuki Noda , Kazunori Saitoh , Kazutami Ariomoto , Katsumi Dosaka
IPC分类号： G11C7/10
CPC分类号： G11C7/1006
摘要： A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width.
摘要翻译：存储单元垫被分成多个条目，并且对应于每个条目布置了算术逻辑单元。在条目和相应的算术逻辑单元之间，以比特串行和并行方式执行算术/逻辑运算。在并行操作不是非常有效的情况下，数据以串行和位并行方式传送到设置在存储器垫的下部的一组处理器。以这种方式，无论操作内容或数据位宽度如何，都可以高速处理大量的数据。

20. 发明授权

US07443901B2 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US07443901B2
公开(公告)日：2008-10-28
申请号：US11387986
申请日：2006-03-24
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S3/097
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

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