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11. 发明授权

US5500393A Method for fabricating a schottky junction 失效
标题翻译：制造肖特基结的方法
公开(公告)号：US5500393A
公开(公告)日：1996-03-19
申请号：US184105
申请日：1994-01-21
申请人： Yoshiki Nishibayashi , Hiromu Shiomi , Naoji Fujimori
发明人： Yoshiki Nishibayashi , Hiromu Shiomi , Naoji Fujimori
IPC分类号： H01L21/04 , H01L21/306 , H01L29/16 , H01L29/47 , H01L21/28
CPC分类号： H01L21/02085 , H01L21/0435 , H01L29/1602 , H01L29/47 , Y10S148/017
摘要： The characteristics of a Schottky junction between diamond and metal causes the diode using the Schottky junction to have a large leakage reverse current and n-value far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is pretreated by oxygen plasma or halogen plasma. The oxygen plasma or hydrogen plasma improves the surface state of the diamond by decoupling the surface C--C bonds and endowing the resulting extra bonds with hydrogen atoms, normalizing the superlattice structure at the surface. Pretreatment of the diamond by the oxygen or halogen plasma improves the diode properties; decreasing reverse current, increasing forward current and decreasing the n-value nearer to 1.
摘要翻译：金刚石与金属之间的肖特基结的特征导致使用肖特基结的二极管具有大的漏电反向电流和n值远大于1.将形成肖特基结的金刚石表面用氧等离子体或卤素等离子体。氧等离子体或氢等离子体或氢等离子体通过使表面C-C键解耦并赋予所形成的额外键与氢原子来改善金刚石的表面状态，使表面超晶格结构标准化。通过氧或卤素等离子体预处理金刚石可提高二极管性能; 减小反向电流，增加正向电流，并将n值减小到更接近1。

12. 发明授权

US5162886A Hall device 失效
标题翻译：霍尔设备
公开(公告)号：US5162886A
公开(公告)日：1992-11-10
申请号：US697441
申请日：1991-05-09
申请人： Yoshiki Nishibayashi , Hideaki Nakahata , Hiromu Shiomi , Naoji Fujimori
发明人： Yoshiki Nishibayashi , Hideaki Nakahata , Hiromu Shiomi , Naoji Fujimori
IPC分类号： G01R33/07 , H01L43/06 , H01L43/10
CPC分类号： H01L43/065 , Y10T428/265 , Y10T428/30
摘要： A Hall device having an active part made from semiconductor diamond. The Hall device works even at high temperature or in corrosive atmosphere. Boron doped diamond is suitable for controlling the acceptor concentration.

13. 发明授权

US6007730A Method of manufacturing diamond heat sink 失效
标题翻译：金刚石散热器制造方法
公开(公告)号：US6007730A
公开(公告)日：1999-12-28
申请号：US21546
申请日：1998-02-10
申请人： Hiromu Shiomi , Yoshiaki Kumazawa
发明人： Hiromu Shiomi , Yoshiaki Kumazawa
IPC分类号： C04B41/88 , C04B35/52 , H01L21/48 , H01L23/373 , B44C1/22 , H01L21/3065 , H01L23/34
CPC分类号： H01L21/4871 , H01L21/4878 , H01L23/3732 , H01L2924/0002 , Y10S257/93
摘要： A diamond polycrystal body having metal films on its upper and lower surfaces is cut in the vertical direction using a laser to form a diamond polycrystal body piece having upper and lower surfaces and a cut surface connecting the upper and lower surfaces. The cut surface may be damaged and include graphite resulting from the laser cutting. To remove the damage and the graphite, the cut surface of the diamond polycrystal body piece is then plasma-treated. Thereby a prescribed degree of electrical insulation between the metallized upper and lower surfaces can be ensured.
摘要翻译：使用激光在垂直方向上切割在其上下表面具有金属膜的金刚石多晶体，以形成具有上下表面的金刚石多晶体片和连接上表面和下表面的切割面。切割表面可能被损坏并且包括由激光切割产生的石墨。为了除去损伤和石墨，然后对金刚石多晶体片的切割表面进行等离子体处理。从而可以确保金属化的上表面和下表面之间的规定的电绝缘程度。

14. 发明申请

US20120119225A1 SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：硅碳化硅基板，外延层基板，半导体器件及制造碳化硅基板的方法
公开(公告)号：US20120119225A1
公开(公告)日：2012-05-17
申请号：US13322089
申请日：2011-02-21
申请人： Hiromu Shiomi , Hideto Tamaso , Shin Harada , Takashi Tsuno , Yasuo Namikawa
发明人： Hiromu Shiomi , Hideto Tamaso , Shin Harada , Takashi Tsuno , Yasuo Namikawa
IPC分类号： H01L29/24 , H01L21/20
CPC分类号： H01L29/7802 , H01L21/02378 , H01L21/02447 , H01L21/02529 , H01L21/02631 , H01L21/02658 , H01L21/02664 , H01L21/046 , H01L21/0495 , H01L29/04 , H01L29/1608 , H01L29/6606 , H01L29/66068
摘要： The present invention provides a silicon carbide substrate, an epitaxial layer provided substrate, a semiconductor device, and a method for manufacturing the silicon carbide substrate, each of which achieves reduced on-resistance. The silicon carbide substrate is a silicon carbide substrate having a main surface, and includes: a SiC single-crystal substrate formed in at least a portion of the main surface; and a base member disposed to surround the SiC single-crystal substrate. The base member includes a boundary region and a base region. The boundary region is adjacent to the SiC single-crystal substrate in a direction along the main surface, and has a crystal grain boundary therein. The base region is adjacent to the SiC single-crystal substrate in a direction perpendicular to the main surface, and has an impurity concentration higher than that of the SiC single-crystal substrate.
摘要翻译：本发明提供一种碳化硅衬底，提供衬底的外延层，半导体器件和制造碳化硅衬底的方法，其中每一个都实现了降低的导通电阻。碳化硅衬底是具有主表面的碳化硅衬底，并且包括：形成在主表面的至少一部分中的SiC单晶衬底; 以及设置成围绕SiC单晶衬底的基底构件。基部构件包括边界区域和基底区域。边界区域沿着主表面的方向与SiC单晶基板相邻，并且在其中具有晶界。基极区域在与主表面垂直的方向上与SiC单晶衬底相邻，杂质浓度高于SiC单晶衬底。

15. 发明授权

US08785301B2 Method of cleaning silicon carbide semiconductor 有权
标题翻译：清洁碳化硅半导体的方法
公开(公告)号：US08785301B2
公开(公告)日：2014-07-22
申请号：US13390869
申请日：2011-02-25
申请人： Keiji Wada , Takeyoshi Masuda , Tomihito Miyazaki , Toru Hiyoshi , Satomi Itoh , Hiromu Shiomi
发明人： Keiji Wada , Takeyoshi Masuda , Tomihito Miyazaki , Toru Hiyoshi , Satomi Itoh , Hiromu Shiomi
IPC分类号： H01L21/322 , H01L21/31
CPC分类号： H01L21/02052 , H01L21/02057 , H01L21/67051 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.
摘要翻译：清洗SiC半导体的方法包括以下步骤：在SiC半导体的表面形成氧化膜，除去氧化物膜。在形成氧化膜的步骤中，使用浓度大于或等于30ppm的臭氧水形成氧化膜。成形步骤优选包括加热SiC半导体的表面和臭氧水中的至少一个的步骤。因此，可以获得能够对SiC半导体具有清洁效果的SiC半导体的清洗方法。

16. 发明授权

US06660084B1 Sic single crystal and method for growing the same 有权
标题翻译： Sic单晶和生长方法相同
公开(公告)号：US06660084B1
公开(公告)日：2003-12-09
申请号：US10069503
申请日：2002-02-27
申请人： Hiromu Shiomi , Tsunenobu Kimoto , Hiroyuki Matsunami
发明人： Hiromu Shiomi , Tsunenobu Kimoto , Hiroyuki Matsunami
IPC分类号： C30B2502
CPC分类号： C30B23/00 , C30B23/02 , C30B29/36
摘要： A method of growing a 4H-poly type SiC single crystal 40, characterized in that the 4H-poly type SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal where a {03-38} plane 30u or a plane which is inclined at off angle &agr;, within about 10°, with respect to the {03-38} plane, is exposed.
摘要翻译：一种生长4H-多晶型SiC单晶40的方法，其特征在于，4H-多晶型SiC单晶40在由SiC单晶构成的晶种30上生长，其中{03-38}面30u或相对于{03-38}平面倾斜偏角α在约10°内的平面被暴露。

17. 发明授权

US06391109B1 Method of making SiC single crystal and apparatus for making SiC single crystal 有权
公开(公告)号：US06391109B1
公开(公告)日：2002-05-21
申请号：US09750157
申请日：2000-12-29
申请人： Hiromu Shiomi , Shigehiro Nishino
发明人： Hiromu Shiomi , Shigehiro Nishino
IPC分类号： C30B3500
摘要： An apparatus comprises an Si-disposing section in which solid Si is disposed; a seed-crystal-disposing section in which a seed crystal of SiC is disposed; a synthesis vessel adapted to accommodate the Si-disposing section, the seed-crystal-disposing section, and carbon; heating means adapted to heat the Si-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Si to an evaporation temperature of Si or higher and heating the seed crystal to a temperature higher than that of Si; wherein the Si evaporated by the heating means is adapted to reach the seed-crystal-disposing section.

18. 发明授权

US6132550A Apparatuses for desposition or etching 失效
标题翻译：用于放置或蚀刻的设备
公开(公告)号：US6132550A
公开(公告)日：2000-10-17
申请号：US694457
申请日：1996-08-07
申请人： Hiromu Shiomi
发明人： Hiromu Shiomi
IPC分类号： C23C16/505 , C23C16/511 , H01J37/32 , C23C16/00 , C23C14/00 , C23F1/02 , C25B9/00
CPC分类号： H01J37/32247 , C23C16/505 , C23C16/511 , H01J37/32192 , H01J37/3244
摘要： The apparatus according to the present invention is capable of maintain a plasma at relatively high pressure while preventing a window from being heated or sputtered by the plasma. The reaction chamber includes (1) an entrance window for guiding an electromagnetic wave such as a microwave or an RF to the reaction chamber, (2) a reaction room where film formation or etching for a substrate is performed by exciting a gas with the electromagnetic wave such as the microwave or the RF, and (3) an intermediate room arranged between the reaction room and the entrance window and having a pressure higher than that in the reaction chamber. The gas in the intermediate room is not excited with the electromagnetic wave such as the microwave or the RF.
摘要翻译：根据本发明的装置能够在防止窗口被等离子体加热或溅射的同时将等离子体保持在相对较高的压力。反应室包括（1）用于将电磁波如微波或RF引导到反应室的入口窗口，（2）反应室，其中通过用电磁体激发气体来进行基底的成膜或蚀刻波形如微波或RF，以及（3）设置在反应室和入口窗之间并具有高于反应室中的压力的中间室。中间室内的气体不会受到微波或射频等电磁波的激发。

19. 发明授权

US5757032A Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature 失效
标题翻译：半导体金刚石器件具有改进的金刚石接触，在高温下具有出色的操作稳定性
公开(公告)号：US5757032A
公开(公告)日：1998-05-26
申请号：US510220
申请日：1995-08-02
申请人： Yoshiki Nishibayashi , Hiromu Shiomi , Shin-ichi Shikata
发明人： Yoshiki Nishibayashi , Hiromu Shiomi , Shin-ichi Shikata
IPC分类号： H01L21/28 , H01L21/04 , H01L29/43 , H01L29/47 , H01L29/872 , H01L31/0312 , H01L23/48 , H01L23/52 , H01L27/095
CPC分类号： H01L21/043 , H01L21/0435
摘要： A semiconductor device comprising an electrode formed on a semiconductor diamond. The electrode includes a first metal section which is in contact with a surface of the semiconductor diamond and which has a thickness of 100 nm or smaller, and further including a second metal section which is in contact with the first metal section and which has a thickness of equal to or larger than four times the thickness of the first metal section. The second metal section is made of a metal having a melting point of 1000.degree. C. or higher.
摘要翻译：一种半导体器件，包括形成在半导体金刚石上的电极。电极包括与半导体金刚石的表面接触并且具有100nm或更小的厚度的第一金属部分，并且还包括与第一金属部分接触的第二金属部分，并且具有厚度等于或大于第一金属部分的厚度的四倍。第二金属部分由熔点为1000℃以上的金属制成。

20. 发明授权

US5132749A Semiconductor device 失效
公开(公告)号：US5132749A
公开(公告)日：1992-07-21
申请号：US665593
申请日：1991-03-06
申请人： Yoshiki Nishibayashi , Hiromu Shiomi , Maoji Fujimori
发明人： Yoshiki Nishibayashi , Hiromu Shiomi , Maoji Fujimori
IPC分类号： H01L29/861 , H01L29/16 , H01L29/47 , H01L29/872
CPC分类号： H01L29/1602
摘要： Doping a dopant into a diamond semiconductor causes lattice defects. The pn junction diode or the Schottky junction diode made from diamond has low break down voltage and high reverse leakage current owing to the lattice defects. A non-doped or low doped diamond layer with high resistivity is epitaxially grown between the N-type diamond layer and the p-type diamond layer in the pn junction diode or between the metal layer and the doped diamond layer in the Schottky diode. The intermediate layer heightens the break down voltage and decreases the reverse leakage current.

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