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11. 发明授权

US08003424B2 Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag 失效
标题翻译：用于制造具有袖珍光电二极管的CMOS图像传感器以最小化图像滞后的方法
公开(公告)号：US08003424B2
公开(公告)日：2011-08-23
申请号：US11983913
申请日：2007-11-13
申请人： Kyung-Ho Lee , Yi-Tae Kim , Jung-Chak Ahn , Sae-Young Kim
发明人： Kyung-Ho Lee , Yi-Tae Kim , Jung-Chak Ahn , Sae-Young Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14689 , H01L31/035281
摘要： A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.
摘要翻译： CMOS图像传感器包括形成在第一导电类型的半导体衬底中的感光器件，浮动扩散区域，转移晶体管和腔室光电二极管。浮动扩散区域是第二导电类型。转移晶体管具有设置在感光器件和浮动扩散区域之间的沟道区域。袋状光电二极管是第二导电类型，并且形成在沟道区的底表面的第一部分下方，使得沟道区的底表面的第二部分与半导体衬底相邻。

12. 发明申请

US20110193147A1 BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：背景照明CMOS图像传感器及其制造方法
公开(公告)号：US20110193147A1
公开(公告)日：2011-08-11
申请号：US12984404
申请日：2011-01-04
申请人： Jung-Chak Ahn , Kyung-ho Lee
发明人： Jung-Chak Ahn , Kyung-ho Lee
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/1461 , H01L27/14645 , H01L27/14689
摘要： Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.
摘要翻译：具有凸形光接收面的背面照明CMOS图像传感器及其制造方法。背面照明CMOS图像传感器包括金属层，绝缘层和光电二极管。绝缘层位于金属层上。光电二极管在绝缘层上，并且接收光的光电二极管的顶面是弯曲的。包括具有凸表面的光电二极管的背面照明CMOS图像传感器的制造方法包括在光电二极管的受光面的一部分上形成小于光电二极管的岛，并退火该岛以形成具有凸光的光电二极管接受面孔

13. 发明申请

US20110096215A1 Image Sensors and Methods of Manufacturing Image Sensors 有权
标题翻译：图像传感器和制造图像传感器的方法
公开(公告)号：US20110096215A1
公开(公告)日：2011-04-28
申请号：US12909948
申请日：2010-10-22
申请人： Sang-Jun Choi , Yoon-Dong Park , Chris Hong , Dae-Lok Bae , Jung-Chak Ahn , Chang-Rok Moon , June-Mo Koo , Suk-Pil Kim , Hoon-Sang Oh
发明人： Sang-Jun Choi , Yoon-Dong Park , Chris Hong , Dae-Lok Bae , Jung-Chak Ahn , Chang-Rok Moon , June-Mo Koo , Suk-Pil Kim , Hoon-Sang Oh
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/14641 , H01L21/76898 , H01L23/481 , H01L27/14612 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/14687 , H01L2224/9212 , H01L2224/80896 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82
摘要： An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.
摘要翻译：图像传感器包括：第一基板，包括驱动元件，第一基板上的第一绝缘层和驱动元件;第二基板，包括光电转换元件;以及第二绝缘层，在第二基板上和光电转换元件。第二绝缘层的表面位于第一绝缘层的上表面上。图像传感器包括穿透第二绝缘层和第一绝缘层的一部分的导电连接器。还公开了形成图像传感器的方法。

14. 发明授权

US07888715B2 Active pixel sensor with coupled gate transfer transistor 有权
标题翻译：有源像素传感器与耦合栅极转移晶体管
公开(公告)号：US07888715B2
公开(公告)日：2011-02-15
申请号：US11317356
申请日：2005-12-23
申请人： Jung-Chak Ahn , Tetsuo Asaba , Young-Chan Kim
发明人： Jung-Chak Ahn , Tetsuo Asaba , Young-Chan Kim
IPC分类号： H01L27/144
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14621 , H01L27/14647 , H04N5/3559 , H04N5/3745 , H04N5/37457
摘要： A complementary metal-oxide semiconductor (CMOS) active pixel sensor includes a photodiode, a transfer transistor with a coupled gate, a reset transistor and a signal transfer circuit, where the photodiode generates electric charges in response to incident light, the transfer transistor transfers the electric charges integrated in the photodiode to a floating diffusion node, wherein the transfer transistor has a first transfer gate and a second transfer gate, and the first and second transfer gates have a coupled gate structure, the reset transistor resets a potential level of the floating diffusion node by a given voltage level, the signal transfer circuit transfers the potential level of the floating diffusion node to an internal circuit in response to a selection signal, and the CMOS active pixel sensor with the coupled gate may increase a capacity of the photodiode and reduce an image lag by using a voltage coupling effect of the coupled gate.
摘要翻译：互补金属氧化物半导体（CMOS）有源像素传感器包括光电二极管，具有耦合栅极的传输晶体管，复位晶体管和信号传输电路，其中光电二极管响应于入射光产生电荷，传输晶体管将集成在光电二极管中的电荷到浮动扩散节点，其中传输晶体管具有第一传输门和第二传输门，并且第一和第二传输门具有耦合的栅极结构，复位晶体管复位浮置的电位扩散节点通过给定的电压电平，信号传输电路响应于选择信号将浮动扩散节点的电位电平传输到内部电路，并且具有耦合栅极的CMOS有源像素传感器可以增加光电二极管的容量，通过使用耦合栅极的电压耦合效应来减小图像滞后。

15. 发明申请

US20090174799A1 Method of driving an image sensor 有权
标题翻译：驱动图像传感器的方法
公开(公告)号：US20090174799A1
公开(公告)日：2009-07-09
申请号：US12313350
申请日：2008-11-19
申请人： Jong-Jin Lee , Ju-Hyun Ko , Jung-Chak Ahn
发明人： Jong-Jin Lee , Ju-Hyun Ko , Jung-Chak Ahn
IPC分类号： H04N5/335
CPC分类号： H04N5/361 , H01L27/14656 , H04N5/3594
摘要： For driving an image sensor having a pixel with a transfer gate formed between a photo-detector and a floating diffusion region, a noise-reducing voltage is applied on the transfer gate during a first period of an integration mode. A blooming current voltage is applied on the transfer gate during a second period of the integration mode. A read voltage is applied on the transfer gate during a read mode after the integration mode. The read voltage has a higher magnitude than the blooming current voltage. With application of the noise-reducing voltage, noise is reduced and a dynamic range is extended for the image sensor.
摘要翻译：为了驱动具有形成在光电检测器和浮动扩散区域之间的传输门的像素的图像传感器，在积分模式的第一周期期间，在传输门上施加降噪电压。在积分模式的第二周期期间，在传输门上施加开花电流电压。在积分模式之后的读取模式下，在传输门上施加读取电压。读取电压的幅度比起霜电流电压高。通过应用降噪电压，噪声降低，图像传感器的动态范围扩大。

16. 发明申请

US20080035969A1 CMOS image sensors and methods of forming the same 审中-公开
标题翻译： CMOS图像传感器及其形成方法
公开(公告)号：US20080035969A1
公开(公告)日：2008-02-14
申请号：US11889501
申请日：2007-08-14
申请人： Ju-Hyun Ko , Yong-Jei Lee , Jung-Chak Ahn
发明人： Ju-Hyun Ko , Yong-Jei Lee , Jung-Chak Ahn
IPC分类号： H01L31/062 , H01L21/02
CPC分类号： H01L27/14643 , H01L27/14601 , H01L27/14689
摘要： Example embodiments may provide a CMOS image sensor and example methods of forming the same. Example embodiment CMOS image sensors may include a transfer gate insulating pattern between a transfer gate and an active region. A photodiode region and/or a floating doped region may be in the active region at either side of the transfer gate. The transfer gate insulating pattern may include a first part adjacent to the photodiode region and/or a second part adjacent to the floating doped region. The first part may be thicker than the second part.
摘要翻译：示例性实施例可提供CMOS图像传感器及其形成方法。示例性实施例CMOS图像传感器可以包括传输门和有源区之间的传输门绝缘图案。光电二极管区域和/或浮置掺杂区域可以在传输门的任一侧的有源区中。传输栅极绝缘图案可以包括与光电二极管区域相邻的第一部分和/或与浮动掺杂区域相邻的第二部分。第一部分可以比第二部分厚。

17. 发明授权

US08941199B2 Image sensors 有权
标题翻译：图像传感器
公开(公告)号：US08941199B2
公开(公告)日：2015-01-27
申请号：US13431306
申请日：2012-03-27
申请人： Kyung-Ho Lee , Jung-Chak Ahn
发明人： Kyung-Ho Lee , Jung-Chak Ahn
IPC分类号： H01L31/02 , H01L31/0232 , H01L27/146
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/1463 , H01L27/1464
摘要： An image sensor includes a semiconductor substrate, a plurality of photo detecting elements and a backside protection pattern. The plurality of photo detecting elements may be formed in an upper portion of the semiconductor substrate. The plurality of photo detecting elements may be separate from each other. The backside protection pattern may be formed in a lower portion of the semiconductor substrate between the plurality of photo detecting elements.
摘要翻译：图像传感器包括半导体衬底，多个光电检测元件和背面保护图案。多个光电检测元件可以形成在半导体衬底的上部。多个光检测元件可以彼此分开。背面保护图案可以形成在多个光检测元件之间的半导体衬底的下部。

18. 发明授权

US08614470B2 Unit pixel of a CMOS image sensor 失效
标题翻译： CMOS图像传感器的单位像素
公开(公告)号：US08614470B2
公开(公告)日：2013-12-24
申请号：US13541343
申请日：2012-07-03
申请人： Kyung-Ho Lee , Dong-Yoon Jang , Jung-Chak Ahn , Moo-Sup Lim
发明人： Kyung-Ho Lee , Dong-Yoon Jang , Jung-Chak Ahn , Moo-Sup Lim
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L27/14627
摘要： A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.
摘要翻译： CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。光电二极管具有基于半导体衬底中的光的入射角的倾斜形状。

19. 发明授权

US08309995B2 CMOS image sensor 失效
标题翻译： CMOS图像传感器
公开(公告)号：US08309995B2
公开(公告)日：2012-11-13
申请号：US12820787
申请日：2010-06-22
申请人： Kyung-Ho Lee , Dong-Yoon Jang , Jung-Chak Ahn , Moo-Sup Lim
发明人： Kyung-Ho Lee , Dong-Yoon Jang , Jung-Chak Ahn , Moo-Sup Lim
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L27/14627
摘要： A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.
摘要翻译： CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。光电二极管具有基于半导体衬底中的光的入射角的斜率形状。

20. 发明授权

US08053821B2 Image sensor with high conversion efficiency 有权
标题翻译：图像传感器具有高转换效率
公开(公告)号：US08053821B2
公开(公告)日：2011-11-08
申请号：US12321665
申请日：2009-01-23
申请人： Kyoung-Sik Moon , Jung-Chak Ahn , Moo-Sup Lim , Sung-Ho Choi , Kang-Sun Lee
发明人： Kyoung-Sik Moon , Jung-Chak Ahn , Moo-Sup Lim , Sung-Ho Choi , Kang-Sun Lee
IPC分类号： H01L31/062
CPC分类号： G11B17/228 , H01L27/14625 , H01L27/14629 , H01L27/14643
摘要： An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding region is disposed between the photoelectric converter and the reflector. The reflector reflects incident light passed by the photoelectric converter back through the photoelectric converter for increasing photoelectric conversion efficiency and reduced crosstalk. The charge carrier guiding region dissipates undesired charge carriers for further increasing photoelectric conversion efficiency.
摘要翻译：图像传感器包括光电转换器，反射器和电荷载体引导区域。反射器设置在光电转换器下方，电荷载体引导区域设置在光电转换器和反射器之间。反射镜将通过光电转换器的入射光反射回光电转换器，以提高光电转换效率并降低串扰。电荷载流子引导区消耗不期望的电荷载流子，以进一步提高光电转换效率。

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