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1. 发明授权

US08593550B2 Method of driving an image sensor with blooming current 有权
标题翻译：用鲜花电流驱动图像传感器的方法
公开(公告)号：US08593550B2
公开(公告)日：2013-11-26
申请号：US12313350
申请日：2008-11-19
申请人： Jong-Jin Lee , Ju-Hyun Ko , Jung-Chak Ahn
发明人： Jong-Jin Lee , Ju-Hyun Ko , Jung-Chak Ahn
IPC分类号： H04N5/335
CPC分类号： H04N5/361 , H01L27/14656 , H04N5/3594
摘要： For driving an image sensor having a pixel with a transfer gate formed between a photo-detector and a floating diffusion region, a noise-reducing voltage is applied on the transfer gate during a first period of an integration mode. A blooming current voltage is applied on the transfer gate during a second period of the integration mode. A read voltage is applied on the transfer gate during a read mode after the integration mode. The read voltage has a higher magnitude than the blooming current voltage. With application of the noise-reducing voltage, noise is reduced and a dynamic range is extended for the image sensor.
摘要翻译：为了驱动具有形成在光电检测器和浮动扩散区域之间的传输门的像素的图像传感器，在积分模式的第一周期期间，在传输门上施加降噪电压。在积分模式的第二周期期间，在传输门上施加开花电流电压。在积分模式之后的读取模式下，在传输门上施加读取电压。读取电压的幅度比起霜电流电压高。通过应用降噪电压，噪声降低，图像传感器的动态范围扩大。

2. 发明申请

US20080224191A1 Image pickup device with prevention of leakage current 审中-公开
标题翻译：防止漏电流的图像拾取装置
公开(公告)号：US20080224191A1
公开(公告)日：2008-09-18
申请号：US12074573
申请日：2008-03-05
申请人： Jung-Chak Ahn , Yi-Tae Kim , Kyung-Ho Lee , Hyuck-In Kwon , Ju-Hyun Ko , Tetsuo Asaba , Jong-Jin Lee , Su-Hun Lim , Jung-Yeon Kim , Se-Young Kim , Sung-In Hwang
发明人： Jung-Chak Ahn , Yi-Tae Kim , Kyung-Ho Lee , Hyuck-In Kwon , Ju-Hyun Ko , Tetsuo Asaba , Jong-Jin Lee , Su-Hun Lim , Jung-Yeon Kim , Se-Young Kim , Sung-In Hwang
IPC分类号： H01L31/101
CPC分类号： H01L29/0847 , H01L27/14609 , H01L29/1083 , H01L29/78
摘要： An image pickup device includes an active pixel sensor (APS), a row driver, and a leakage current breaker. The active pixel sensor includes an array of a plurality of pixels. The row driver selects at least one pixel to be activated to output signals. The leakage current breaker decreases the leakage current through the unselected pixels by applying a leakage current breaker voltage at the bit lines of the APS array.
摘要翻译：图像拾取装置包括有源像素传感器（APS），行驱动器和泄漏电流断路器。有源像素传感器包括多个像素的阵列。行驱动器选择要激活的至少一个像素来输出信号。泄漏电流断路器通过在APS阵列的位线处施加泄漏电流断路器电压来减小通过未选择的像素的泄漏电流。

3. 发明申请

US20090174799A1 Method of driving an image sensor 有权
标题翻译：驱动图像传感器的方法
公开(公告)号：US20090174799A1
公开(公告)日：2009-07-09
申请号：US12313350
申请日：2008-11-19
申请人： Jong-Jin Lee , Ju-Hyun Ko , Jung-Chak Ahn
发明人： Jong-Jin Lee , Ju-Hyun Ko , Jung-Chak Ahn
IPC分类号： H04N5/335
CPC分类号： H04N5/361 , H01L27/14656 , H04N5/3594
摘要： For driving an image sensor having a pixel with a transfer gate formed between a photo-detector and a floating diffusion region, a noise-reducing voltage is applied on the transfer gate during a first period of an integration mode. A blooming current voltage is applied on the transfer gate during a second period of the integration mode. A read voltage is applied on the transfer gate during a read mode after the integration mode. The read voltage has a higher magnitude than the blooming current voltage. With application of the noise-reducing voltage, noise is reduced and a dynamic range is extended for the image sensor.
摘要翻译：为了驱动具有形成在光电检测器和浮动扩散区域之间的传输门的像素的图像传感器，在积分模式的第一周期期间，在传输门上施加降噪电压。在积分模式的第二周期期间，在传输门上施加开花电流电压。在积分模式之后的读取模式下，在传输门上施加读取电压。读取电压的幅度比起霜电流电压高。通过应用降噪电压，噪声降低，图像传感器的动态范围扩大。

4. 发明申请

US20080018757A1 Color correction in CMOS image sensor 有权
标题翻译： CMOS图像传感器中的色彩校正
公开(公告)号：US20080018757A1
公开(公告)日：2008-01-24
申请号：US11811630
申请日：2007-06-11
申请人： Bum-Suk Kim , Alexander Getman , Jong-Jin Lee , Yun-Ho Jang , Jung-Chak Ahn
发明人： Bum-Suk Kim , Alexander Getman , Jong-Jin Lee , Yun-Ho Jang , Jung-Chak Ahn
IPC分类号： H04N3/14
CPC分类号： H04N9/045 , H04N2209/046
摘要： For color correction in an image sensor, an image sensor processing block generates a plurality of color correction parameters corresponding to a plurality of selected pixels of the image sensor for defining a plurality of areas of a sample image. In addition, a color correction value calculation block generates a respective color correction value corresponding to a given pixel from bilinear interpolation of a respective subset of the color correction parameters corresponding to a respective one of the areas including a respective location of the given pixel.
摘要翻译：对于图像传感器中的颜色校正，图像传感器处理块生成对应于图像传感器的多个选择像素的多个颜色校正参数，用于定义样本图像的多个区域。此外，颜色校正值计算块根据对应于包括给定像素的相应位置的各个区域的颜色校正参数的相应子集的双线性插值，从给定像素生成对应于给定像素的相应颜色校正值。

5. 发明授权

US07990437B2 Color correction in CMOS image sensor 有权
标题翻译： CMOS图像传感器中的色彩校正
公开(公告)号：US07990437B2
公开(公告)日：2011-08-02
申请号：US11811630
申请日：2007-06-11
申请人： Bum-Suk Kim , Alexander Getman , Jong-Jin Lee , Yun-Ho Jang , Jung-Chak Ahn
发明人： Bum-Suk Kim , Alexander Getman , Jong-Jin Lee , Yun-Ho Jang , Jung-Chak Ahn
IPC分类号： H04N5/262 , H04N9/73
CPC分类号： H04N9/045 , H04N2209/046
摘要： For color correction in an image sensor, an image sensor processing block generates a plurality of color correction parameters corresponding to a plurality of selected pixels of the image sensor for defining a plurality of areas of a sample image. In addition, a color correction value calculation block generates a respective color correction value corresponding to a given pixel from bilinear interpolation of a respective subset of the color correction parameters corresponding to a respective one of the areas including a respective location of the given pixel.
摘要翻译：对于图像传感器中的颜色校正，图像传感器处理块生成对应于图像传感器的多个选择像素的多个颜色校正参数，用于定义样本图像的多个区域。此外，颜色校正值计算块根据对应于包括给定像素的相应位置的各个区域的颜色校正参数的相应子集的双线性插值，从给定像素生成对应于给定像素的相应颜色校正值。

6. 发明申请

US20080182354A1 METHODS OF FABRICATING CMOS IMAGE SENSORS 审中-公开
标题翻译：制作CMOS图像传感器的方法
公开(公告)号：US20080182354A1
公开(公告)日：2008-07-31
申请号：US11950249
申请日：2007-12-04
申请人： Jong-Jin Lee , Ju-Hyun Ko , Jong-Eun Park , Hyun-Suk Kim , Dong-Yoon Jang
发明人： Jong-Jin Lee , Ju-Hyun Ko , Jong-Eun Park , Hyun-Suk Kim , Dong-Yoon Jang
IPC分类号： H01L31/18
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/1463 , H01L27/14681 , H01L27/14689
摘要： CMOS image sensors and related methods of fabricating CMOS image sensors are disclosed. Fabrication of a CMOS image sensor can include forming a first impurity region having a first conductivity type in a semiconductor substrate. A second impurity region having a second conductivity type is formed in the semiconductor substrate adjacent to the first impurity region. A third impurity region having the first conductivity type is formed in the semiconductor substrate and located below the second impurity region. A transfer gate is formed on the semiconductor substrate and at least partially overlaps the first, second, and third impurity regions. A photo sensitive device is formed in the semiconductor substrate and adjacent to one side of the transfer gate. A floating diffusion region is formed in the semiconductor substrate and located adjacent to an opposite side of the transfer gate from the photosensitive device.
摘要翻译：公开了CMOS图像传感器和制造CMOS图像传感器的相关方法。 CMOS图像传感器的制造可以包括在半导体衬底中形成具有第一导电类型的第一杂质区域。在与第一杂质区相邻的半导体衬底中形成具有第二导电类型的第二杂质区。具有第一导电类型的第三杂质区形成在半导体衬底中并位于第二杂质区的下方。传输栅极形成在半导体衬底上并且至少部分地与第一，第二和第三杂质区重叠。光敏元件形成在半导体衬底中并与传输门的一侧相邻。浮动扩散区域形成在半导体衬底中并且位于与传感栅极的与光敏器件相反的一侧。

7. 发明申请

US20130219246A1 Method and Apparatus for Detecting Free Page and a Method and Apparatus for Decoding Error Correction Code Using the Method and Apparatus for Detecting Free Page 有权
标题翻译：用于检测自由页的方法和装置以及使用用于检测自由页的方法和装置来解码纠错码的方法和装置
公开(公告)号：US20130219246A1
公开(公告)日：2013-08-22
申请号：US13859976
申请日：2013-04-10
申请人： Kwan-Ho Kim , Jong-In Kim , Young-Wook Jang , Hee-Dong Shin , Bong-Chun Kang , Jong-Jin Lee
发明人： Kwan-Ho Kim , Jong-In Kim , Young-Wook Jang , Hee-Dong Shin , Bong-Chun Kang , Jong-Jin Lee
IPC分类号： G06F11/10
CPC分类号： G06F11/10 , G06F11/1008 , H03M13/37 , H03M13/3707
摘要： A method and apparatus for detecting a free page of a memory device, and a method and apparatus for decoding an error correction code by using the method and apparatus for detecting a free page are provided. Free page data read from the memory is converted into a converted codeword for inclusion as an element of an error correction code field. The converted codeword is compared to an initially set target codeword to detect an amount of non-identical bits. A page read from the memory is determined to be a free page when the amount of non-identical bits is equal to or less than an initially set threshold value.
摘要翻译：提供一种用于检测存储装置的自由页面的方法和装置，以及通过使用用于检测空闲页面的方法和装置来解码纠错码的方法和装置。从存储器读取的自由页面数据被转换为转换的码字，以作为纠错码字段的元素。将转换的码字与初始设置的目标码字进行比较，以检测不相同比特的量。当不相同比特量等于或小于初始设置的阈值时，从存储器读取的页面被确定为空闲页面。

8. 发明申请

US20100012364A1 METHOD OF MANUFACTURING ELECTRONIC COMPONENT EMBEDDED CIRCUIT BOARD 有权
标题翻译：制造电子元件嵌入式电路板的方法
公开(公告)号：US20100012364A1
公开(公告)日：2010-01-21
申请号：US12359416
申请日：2009-01-26
申请人： Byoung-Chan KIM , Young-Hwan Shin , Jong-Jin Lee
发明人： Byoung-Chan KIM , Young-Hwan Shin , Jong-Jin Lee
IPC分类号： H05K1/16 , H05K3/36
CPC分类号： H01L24/91 , H01L24/24 , H01L24/82 , H01L24/97 , H01L2224/04105 , H01L2224/16 , H01L2224/24227 , H01L2224/32145 , H01L2224/73267 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/18162 , H05K1/187 , H05K3/205 , H05K3/4602 , H05K2201/10515 , H05K2201/10674 , H05K2203/0376 , H05K2203/1469 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913 , Y10T29/49133 , Y10T29/49155 , Y10T29/49165 , H01L2224/82 , H01L2224/0401
摘要： An electronic component embedded printed circuit board and a method for manufacturing the same are disclosed. The method includes: providing a first carrier having a first circuit pattern formed on one surface thereof; providing a second carrier having a second circuit pattern formed on one surface thereof; flip-chip bonding an electronic component to the first circuit pattern; stacking one side of an insulator on one side of the first carrier to cover the electronic component; compressing the second carrier having the second circuit pattern formed on one surface thereof on an other side of the insulator; and removing the first carrier and the second carrier. The method can improve the degree of conformation for an electrical component by embedding the electrical component using a flip-chip bonding method and can improve the yield by simplifying the production process.
摘要翻译：公开了电子部件嵌入式印刷电路板及其制造方法。该方法包括：提供具有形成在其一个表面上的第一电路图案的第一载体; 提供具有形成在其一个表面上的第二电路图案的第二载体; 将电子部件倒装成第一电路图案; 将绝缘体的一侧堆叠在第一载体的一侧以覆盖电子部件; 在绝缘体的另一侧上压制在其一个表面上形成有第二电路图案的第二载体; 以及去除所述第一载体和所述第二载体。该方法可以通过使用倒装芯片接合方法嵌入电子部件来提高电气部件的构造程度，并且可以通过简化制造工艺来提高成品率。

9. 发明授权

US07560681B2 Image sensor and manufacturing method thereof 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US07560681B2
公开(公告)日：2009-07-14
申请号：US11797561
申请日：2007-05-04
申请人： Kyoung-Sik Moon , Bum-Suk Kim , Jong-Jin Lee , Yun-Ho Jang
发明人： Kyoung-Sik Moon , Bum-Suk Kim , Jong-Jin Lee , Yun-Ho Jang
IPC分类号： H01L27/00 , H01L31/18 , H01J40/14
CPC分类号： G02B3/08 , G02B3/0056 , G02B13/22 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14685 , H01L31/02165
摘要： An image sensor may include a plurality of photodiodes for performing a photo-electric conversion and a plurality of microlenses. Each of the microlenses is formed over one of the photodiodes. The image sensor may further include a vertical light generating portion formed over the microlenses and configured to refract each of plurality of incident light rays such that the light rays are vertically incident on the microlenses.
摘要翻译：图像传感器可以包括用于执行光电转换和多个微透镜的多个光电二极管。每个微透镜形成在一个光电二极管上。图像传感器还可以包括形成在微透镜上的垂直光产生部分，并被配置为折射多个入射光线中的每一个，使得光线垂直入射在微透镜上。

10. 发明申请

US20080105927A1 Memory devices and methods of manufacturing the same 审中-公开
标题翻译：存储器件及其制造方法
公开(公告)号：US20080105927A1
公开(公告)日：2008-05-08
申请号：US11711117
申请日：2007-02-27
申请人： Young-Joon Ahn , Jong-Jin Lee
发明人： Young-Joon Ahn , Jong-Jin Lee
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L27/11521 , H01L21/764 , H01L27/115 , H01L29/40114
摘要： The memory device includes upper gate structures and lower gate structures formed on an active region of a substrate, and an insulation layer. Each of the upper gate structures may have a blocking layer pattern and a control gate electrode. Each of the lower gate structures may have a tunnel insulation layer pattern and a floating gate electrode. The floating gate electrode may include a lower portion that is narrower than an upper portion contacting with the upper gate structure. The insulation layer may cover gate structures formed of the lower and upper gate structures, and may include air gaps between adjacent gate structures.
摘要翻译：存储器件包括形成在衬底的有源区上的上栅极结构和下栅极结构以及绝缘层。每个上部栅极结构可以具有阻挡层图案和控制栅电极。每个下栅极结构可以具有隧道绝缘层图案和浮栅电极。浮栅电极可以包括比与上栅极结构接触的上部更窄的下部。绝缘层可以覆盖由下部和上部栅极结构形成的栅极结构，并且可以包括相邻栅极结构之间的气隙。

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