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11. 发明申请

US20080193876A1 Rinsing Liquid for Lithography and Method for Resist Pattern Formation 审中-公开
标题翻译：用于光刻的冲洗液和抗蚀剂图案形成方法
公开(公告)号：US20080193876A1
公开(公告)日：2008-08-14
申请号：US11661426
申请日：2005-08-29
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： H01L21/0273 , G03F7/32
摘要： This invention provides a novel rinsing liquid for lithography, which, for a photoresist pattern, can reduce surface defects, the so-called defects, without sacrificing the quality of the product, and, at the same time, can impart resistance to electron beam irradiation to suppress the shrinkage of the resist pattern, and a method for resist pattern formation using the same. A resist pattern is formed by preparing a rinsing liquid for lithography comprising an aqueous solution containing (A) a water-soluble and/or alkali-soluble polymer having a nitrogen atom in its molecular structure and (B) at least one member selected from aliphatic alcohols and alkyletherification products thereof, and then carrying out (1) the step of providing a photoresist film on a substrate, (2) the step of selectively exposing the photoresist film thorough a mask pattern, (3) the step of heat-treating the exposed photoresist film, (4) the step of carrying out alkali development, and (5) the step of treating the developed film with the rinsing liquid for lithography.
摘要翻译：本发明提供了一种新颖的光刻冲洗液，其中光致抗蚀剂图案可以减少表面缺陷，即所谓的缺陷，而不会牺牲产品的质量，并且同时可赋予电子束照射以抑制抗蚀剂图案的收缩，以及使用其的抗蚀剂图案形成方法。通过制备用于光刻的冲洗液，通过制备含有（A）在其分子结构中具有氮原子的水溶性和/或碱溶性聚合物的水溶液形成抗蚀剂图案，（B）至少一种选自脂肪族醇和烷基醚化产物，然后进行（1）在基板上提供光致抗蚀剂膜的步骤，（2）通过掩模图案选择性地曝光光致抗蚀剂膜的步骤，（3）热处理暴露的光致抗蚀剂膜，（4）进行碱显影的步骤，（5）用用于光刻的冲洗液处理显影膜的步骤。

12. 发明申请

US20070218412A1 Rinse Solution For Lithography 审中-公开
标题翻译：冲洗液用于平版印刷
公开(公告)号：US20070218412A1
公开(公告)日：2007-09-20
申请号：US11587253
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Yoshihiro Sawada , Hidekazu Tajima
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Yoshihiro Sawada , Hidekazu Tajima
IPC分类号： G03F7/32 , H01L21/027
CPC分类号： G03F7/322 , G03F7/32 , G03F7/40
摘要： A novel rinse solution for lithography to be used for suppressing contraction of a pattern and a method for forming a resist pattern using the rinse solution are provided, by reducing product surface defects of a photoresist pattern and providing the photoresist pattern with resistance to electronic beam irradiation. The rinse solution for lithography composed of a solution including a water-soluble resin having a nitrogen atom in a molecular structure is prepared. The resist pattern is formed with the rinse solution by performing (A) a process of providing a photoresist film on a board, (B) a process of selectively exposing the photoresist film through a mask pattern, (C) a process of performing post exposure bake (PEB), (D) a process of alkaline development, and (E) a process of treatment with the rinse solution for lithography.
摘要翻译：提供了用于抑制图案收缩的新颖的用于光刻的冲洗溶液和使用该冲洗溶液形成抗蚀剂图案的方法，通过减少光致抗蚀剂图案的产品表面缺陷并提供抗电子束照射的抗蚀剂图案。制备由包含分子结构中具有氮原子的水溶性树脂的溶液构成的平版印刷用溶液。通过执行（A）在基板上提供光致抗蚀剂膜的工艺，（B）通过掩模图案选择性地曝光光致抗蚀剂膜的工艺，（C）进行曝光后处理的工艺，由冲洗液形成抗蚀剂图案烘烤（PEB），（D）碱性显影过程，（E）用于光刻的冲洗溶液的处理过程。

13. 发明申请

US20070218399A1 Resist Pattern Forming Method and Composite Rinse Agent 有权
标题翻译：抗蚀剂图案形成方法和复合漂洗剂
公开(公告)号：US20070218399A1
公开(公告)日：2007-09-20
申请号：US11587252
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： G03F7/32 , H01L21/027
CPC分类号： G03F7/40
摘要： A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.
摘要翻译：基于与传统图案塌陷防止方法完全不同的原理，制造高质量产品的方法，而不损害通过漂洗工艺形成的图案的物理性能。通过对设置在基板上的光致抗蚀剂层进行成像曝光，然后在显影处理之后，形成抗蚀剂图案的所得层，通过降低接触角的方法来形成抗蚀剂图案的方法相对于抗蚀剂图案表面上的接触液体达到40度，然后通过将其增加至至少70度，并进一步通过干燥。

14. 发明申请

US20110061678A1 Cleaning liquid for lithography and a cleaning method using it for photoexposure devices 有权
公开(公告)号：US20110061678A1
公开(公告)日：2011-03-17
申请号：US12801529
申请日：2010-06-14
申请人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
发明人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
IPC分类号： B08B7/00 , C11D3/44
CPC分类号： C11D3/43 , C11D1/66 , C11D1/667 , C11D1/72 , C11D3/18 , C11D3/181 , C11D3/182 , C11D3/184 , C11D3/188 , G03F7/2041 , G03F7/70341 , G03F7/70925 , G03F7/70983
摘要： Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production.Means for Solution: A cleaning liquid for photolithography to be used for cleaning a photoexposure device in a process of liquid immersion lithography that comprises filling the space between the optical lens member of a photoexposure device and an object for photoexposure mounted on the wafer stage, with a medium for liquid immersion lithography, the cleaning liquid comprising (a) a surfactant, (b) a hydrocarbon solvent, and (c) water; and a cleaning method using it for photoexposure devices.

15. 发明授权

US08058220B2 Cleaning liquid for lithography and a cleaning method using it for photoexposure devices 有权
标题翻译：用于光刻的清洁液和使用其进行曝光装置的清洁方法
公开(公告)号：US08058220B2
公开(公告)日：2011-11-15
申请号：US12801529
申请日：2010-06-14
申请人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
发明人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
IPC分类号： C11D7/50
CPC分类号： C11D3/43 , C11D1/66 , C11D1/667 , C11D1/72 , C11D3/18 , C11D3/181 , C11D3/182 , C11D3/184 , C11D3/188 , G03F7/2041 , G03F7/70341 , G03F7/70925 , G03F7/70983
摘要： Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production.Means for Solution: A cleaning liquid for photolithography to be used for cleaning a photoexposure device in a process of liquid immersion lithography that comprises filling the space between the optical lens member of a photoexposure device and an object for photoexposure mounted on the wafer stage, with a medium for liquid immersion lithography, the cleaning liquid comprising (a) a surfactant, (b) a hydrocarbon solvent, and (c) water; and a cleaning method using it for photoexposure devices.
摘要翻译：问题：提供用于光刻的清洗液和使用其进行曝光的清洁装置。在液浸式光刻工序中，清洗液可以有效地清除被光致抗蚀剂除去的成分所污染的光曝光装置部位（特别是光学透镜部件），除去污染物，另外清洗液的废弃处理容易，用于液浸光刻介质的清洁液的替代效率高，并且清洁液体不会降低半导体生产中的生产量。解决方案：一种用于在液浸光刻工艺中用于清洁曝光装置的光刻用清洁液体，其包括填充曝光装置的光学透镜部件和安装在晶片台上的光曝光对象之间的空间，用用于液浸光刻的介质，所述清洗液包含（a）表面活性剂，（b）烃溶剂和（c）水; 以及将其用于曝光装置的清洁方法。

16. 发明申请

US20120084034A1 NON-TRANSITORY COMPUTER-READABLE MEDIUM STORING DESIGN CHECK PROGRAM, DESIGN CHECK APPARATUS, AND DESIGN CHECK METHOD 审中-公开
标题翻译：非终端计算机可读介质存储设计检查程序，设计检查设备和设计检查方法
公开(公告)号：US20120084034A1
公开(公告)日：2012-04-05
申请号：US13237019
申请日：2011-09-20
申请人： Yoshiaki Hiratsuka , Yoshihiro Sawada , Kenji Nagase , Tomoyuki Nakao , Keisuke Nakamura
发明人： Yoshiaki Hiratsuka , Yoshihiro Sawada , Kenji Nagase , Tomoyuki Nakao , Keisuke Nakamura
IPC分类号： G06F19/00
CPC分类号： G06F17/5081 , G06F17/5036 , G06F2217/82 , H05K1/023 , H05K3/0005
摘要： A design check method executed by a computer includes determining a countermeasure component provided in a certain range from a terminal of a reference component, determining whether a terminal of the determined countermeasure component is electrically connected to the terminal of the reference component, and determining that the countermeasure component is suitably mounted when the terminal of the determined countermeasure component that is electrically connected to the terminal of the reference component is at least within the certain range.
摘要翻译：由计算机执行的设计检查方法包括从参考部件的终端确定在一定范围内提供的对策部件，确定所确定的对策部件的终端是否电连接到所述参考部件的终端，以及确定当与参考部件的端子电连接的所确定的对策部件的端子至少在一定范围内时，适当地安装对策部件。

17. 发明授权

US5976705A Ferroelectric thin film, making method thereof and coating liquid for making thin film 失效
标题翻译：铁电薄膜，其制造方法和用于制造薄膜的涂布液
公开(公告)号：US5976705A
公开(公告)日：1999-11-02
申请号：US768293
申请日：1996-12-17
申请人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
发明人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
IPC分类号： C04B35/48 , C04B35/622 , H01B3/00 , H01B3/12 , H01L21/02 , H01L21/314 , H01L21/316 , B32B17/00
CPC分类号： H01L21/31691 , C04B35/62218 , H01L28/56
摘要： An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr.sub.x Ti.sub.1-x Sb.sub.y O.sub.3 (where 0
摘要翻译：本发明的目的是降低施加电压时的Pb Zr Ti O系铁电薄膜的漏电流。本文提供了包含PbZrxTi1-xSbyO3（其中0

18. 发明授权

US06403160B1 Ferroelectric thin film, production method thereof and coating liquid for making thin film 失效
标题翻译：铁电薄膜，其制造方法和制造薄膜的涂布液
公开(公告)号：US06403160B1
公开(公告)日：2002-06-11
申请号：US09389484
申请日：1999-09-03
申请人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
发明人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
IPC分类号： B05D302
CPC分类号： H01L21/31691 , C04B35/62218 , H01L28/56
摘要： An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZrxTi1−xSbyO3 (where 0
摘要翻译：本发明的目的是降低施加电压时的Pb Zr Ti O系铁电薄膜的漏电流。提供了包含PbZr x Ti 1-x S y O 3（其中0

19. 发明授权

US06197102B1 Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof 失效
标题翻译：用于形成铋基铁电薄膜的涂布溶液以及由所述涂布溶液形成的铁电薄膜，铁电电容器和铁电存储体以及其制备方法
公开(公告)号：US06197102B1
公开(公告)日：2001-03-06
申请号：US09008245
申请日：1998-01-15
申请人： Yoshihiro Sawada , Akira Hashimoto , Ichiro Koiwa , Juro Mita , Yukihisa Okada , Takao Kanehara , Hiroyo Kato
发明人： Yoshihiro Sawada , Akira Hashimoto , Ichiro Koiwa , Juro Mita , Yukihisa Okada , Takao Kanehara , Hiroyo Kato
IPC分类号： C09K300
CPC分类号： H01L21/02197 , C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/85 , C01P2004/80 , C01P2006/40 , C23C16/40 , C23C16/448 , H01L21/02282 , H01L21/31691 , H01L28/55
摘要： The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (5), a ferroelectric capacitor (10) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.
摘要翻译：本发明公开了一种用于形成含有Bi，金属元素A（选自Bi，Pb，Ba，Sr，Ca，Na，K和稀土元素中的至少一种）的Bi基铁电薄膜的涂布溶液，和金属元素B（选自Ti，Nb，Ta，W，Mo，Fe，Co和Cr中的至少一种），其中分别含有Bi的金属醇盐，金属元素A和金属元素B，通过将由任意两种以上的所述金属醇盐形成的复合金属醇盐与单独的水或与催化剂组合水解而得到的有机金属化合物，并且含有摩尔量为化学计量量的1-1.1倍摩尔量的Bi; 铁电薄膜（5），铁电电容器（10）和使用这种涂布液的铁电存储器; 及其制造方法。

20. 发明授权

US5530021A Hydrazine derivative and pesticidal composition comprising said derivative as an effective ingredient 失效
标题翻译：肼衍生物和包含所述衍生物作为有效成分的农药组合物
公开(公告)号：US5530021A
公开(公告)日：1996-06-25
申请号：US308643
申请日：1994-09-19
申请人： Mikio Yanagi , Hiroyasu Sugizaki , Tetsuya Toya , Yasuhito Kato , Hidetoshi Shirakura , Tetsuo Watanabe , Yoshimi Yajima , Seiichirou Kodama , Akio Masui , Toshiaki Yanai , Yoshihisa Tsukamoto , Yoshihiro Sawada , Shinji Yokoi
发明人： Mikio Yanagi , Hiroyasu Sugizaki , Tetsuya Toya , Yasuhito Kato , Hidetoshi Shirakura , Tetsuo Watanabe , Yoshimi Yajima , Seiichirou Kodama , Akio Masui , Toshiaki Yanai , Yoshihisa Tsukamoto , Yoshihiro Sawada , Shinji Yokoi
IPC分类号： A01N43/16 , A01N43/18 , A01N43/24 , A01N43/32 , A01N43/42 , A01N43/46 , A01N43/60 , A01N43/62 , A01N43/72 , A01N43/84 , A01P7/04 , C07D223/16 , C07D241/42 , C07D241/44 , C07D243/12 , C07D265/36 , C07D267/14 , C07D279/16 , C07D281/10 , C07D311/12 , C07D311/22 , C07D311/58 , C07D311/68 , C07D313/08 , C07D319/16 , C07D319/18 , C07D319/20 , C07D321/10 , C07D327/06 , C07D335/06 , C07D337/08 , C07D339/00 , C07D339/08 , C07D493/10 , C07F7/18
CPC分类号： C07D493/10 , A01N43/16 , A01N43/24 , A01N43/32 , A01N43/84 , C07D265/36 , C07D311/22 , C07D311/58 , C07D311/68 , C07D319/18 , C07D319/20 , C07D321/10 , C07D327/06 , C07F7/1844
摘要： A novel hydrazine derivative and a pesticidal composition containing the hydrazine derivative as the effecting ingredient. The hydrazine derivative show high pesticidal activity against harmful pests which are resistant to known pesticides such as organophosphorus pesticides, pyrethroids, etc., especially against Lepidoptera harmful pests such as Plutella xylostella, Spodoptera litura, Cnaphalocrocis medinalis, Adoxophyes orana, etc., and is effective for controlling harmful pests in paddy field, upland field, orchard, forest or places to be kept environmentally hygienic.
摘要翻译：一种新颖的肼衍生物和含有肼衍生物作为有效成分的农药组合物。肼衍生物对杀虫剂具有很强的杀虫活性，对有机磷杀虫剂，拟除虫菊酯等已知的农药具有抗性，特别是针对鳞翅目有害害虫如小菜蛾（Plutella xylostella），斜纹夜蛾（Spodoptera litura），Cnaphalocrocis medinalis，Adoxophyes orana等，有效控制水田，旱田，果园，森林或环境卫生的有害害虫。

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