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11. 发明授权

US06824611B1 Method and apparatus for growing silicon carbide crystals 有权
标题翻译：生长碳化硅晶体的方法和装置
公开(公告)号：US06824611B1
公开(公告)日：2004-11-30
申请号：US09415402
申请日：1999-10-08
申请人： Olle Claes Erik Kordina , Michael James Paisley
发明人： Olle Claes Erik Kordina , Michael James Paisley
IPC分类号： C30B2936
CPC分类号： C30B23/00 , C30B25/00 , C30B29/36 , Y10S117/90 , Y10S117/902
摘要： A method and apparatus for controlled, extended and repeatable growth of high quality silicon carbide boules of a desired polytype is disclosed which utilizes graphite crucibles coated with a thin coating of a metal carbide and in particular carbides selected from the group consisting of tantalum carbide, hafnium carbide, niobium carbide, titanium carbide, zirconium carbide, tungsten carbide and vanadium carbide.
摘要翻译：公开了一种用于控制，延长和重复生长所需多晶型高品质碳化硅晶粒的方法和装置，其利用涂覆有金属碳化物的薄涂层的石墨坩埚，特别是选自碳化钽，铪碳化物，碳化铌，碳化钛，碳化锆，碳化钨和碳化钒。

12. 发明授权

US06849874B2 Minimizing degradation of SiC bipolar semiconductor devices 有权
公开(公告)号：US06849874B2
公开(公告)日：2005-02-01
申请号：US10046346
申请日：2001-10-26
申请人： Joseph J. Sumakeris , Ranbir Singh , Michael James Paisley , Stephan Georg Mueller , Hudson M. Hobgood , Calvin H. Carter, Jr. , Albert Augustus Burk, Jr.
发明人： Joseph J. Sumakeris , Ranbir Singh , Michael James Paisley , Stephan Georg Mueller , Hudson M. Hobgood , Calvin H. Carter, Jr. , Albert Augustus Burk, Jr.
IPC分类号： H01L29/24 , H01L29/732 , H01L29/744 , H01L29/861 , H01L29/161
CPC分类号： H01L29/1608 , C30B19/00 , C30B23/002 , C30B25/02 , C30B29/36 , H01L29/6606 , H01L29/66068 , H01L29/732 , H01L29/744 , H01L29/861
摘要： A bipolar device has at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.

13. 发明授权

US07427326B2 Minimizing degradation of SiC bipolar semiconductor devices 有权
标题翻译：最小化SiC双极半导体器件的退化
公开(公告)号：US07427326B2
公开(公告)日：2008-09-23
申请号：US11560575
申请日：2006-11-16
申请人： Joseph J. Sumakeris , Ranbir Singh , Michael James Paisley , Stephan Georg Mueller , Hudson M. Hobgood , Calvin H. Carter, Jr. , Albert Augustus Burk, Jr.
发明人： Joseph J. Sumakeris , Ranbir Singh , Michael James Paisley , Stephan Georg Mueller , Hudson M. Hobgood , Calvin H. Carter, Jr. , Albert Augustus Burk, Jr.
IPC分类号： C30B25/12
CPC分类号： H01L29/1608 , C30B19/00 , C30B23/002 , C30B25/02 , C30B29/36 , H01L29/6606 , H01L29/66068 , H01L29/732 , H01L29/744 , H01L29/861
摘要： A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.
摘要翻译：形成双极性器件的方法包括在衬底上形成至少一个单晶碳化硅的p型层和至少一个单晶碳化硅n型层。在设备的正向操作下生长的堆叠故障与活动区域和设备的其余部分之间的至少一个接口分离。形成双极器件的方法包括将至少一个外延层生长至大于该层中的少数载流子扩散长度的厚度。该方法还增加了漂移区周围的外延层的掺杂浓度，以减少其中的少数载流子寿命。

14. 发明授权

US06297522B1 Highly uniform silicon carbide epitaxial layers 有权
标题翻译：高度均匀的碳化硅外延层
公开(公告)号：US06297522B1
公开(公告)日：2001-10-02
申请号：US09502612
申请日：2000-02-11
申请人： Olle Claes Erik Kordina , Kenneth George Irvine , Michael James Paisley
发明人： Olle Claes Erik Kordina , Kenneth George Irvine , Michael James Paisley
IPC分类号： H01L310312
CPC分类号： C23C16/325 , C30B25/02 , C30B29/36 , Y10S148/148
摘要： An improved chemical vapor deposition method is disclosed that increases the uniformity of silicon carbide epitaxial layers and that is particularly useful for obtaining thicker epitaxial layers. The method comprises heating a reactor to a temperature at which silicon carbide source gases will form an epitaxial layer of silicon carbide on a substrate in the reactor; and then directing a flow of source and carrier gases through the heated reactor to form an epitaxial layer of silicon carbide on the substrate with the carrier gases comprising a blend of hydrogen and a second gas in which the second gas has a thermal conductivity that is less than the thermal conductivity of hydrogen so that the source gases deplete less as they pass through the reactor than they would if hydrogen is used as the sole carrier gas.
摘要翻译：公开了改进的化学气相沉积方法，其提高了碳化硅外延层的均匀性，并且对于获得较厚的外延层特别有用。该方法包括将反应器加热到碳化硅源气体将在反应器中的基底上形成碳化硅外延层的温度; 然后引导源和载气流通过加热的反应器，以在衬底上形成碳化硅的外延层，其中载气包含氢和第二气体的共混物，其中第二气体的导热系数较小比氢气的导热性好，这样当源气体通过反应器时，如果氢气用作唯一的载气，源气体就会消耗更少的气体。

15. 发明授权

US6063186A Growth of very uniform silicon carbide epitaxial layers 失效
标题翻译：生长非常均匀的碳化硅外延层
公开(公告)号：US6063186A
公开(公告)日：2000-05-16
申请号：US992157
申请日：1997-12-17
申请人： Kenneth George Irvine , Michael James Paisley , Olle Claes Erik Kordina
发明人： Kenneth George Irvine , Michael James Paisley , Olle Claes Erik Kordina
IPC分类号： C30B29/36 , C23C16/32 , C30B25/02 , C30B25/14
CPC分类号： C23C16/325 , C30B25/02 , C30B29/36 , Y10S148/148
摘要： An improved chemical vapor deposition method is disclosed that increases the uniformity of silicon carbide epitaxial layers and that is particularly useful for obtaining thicker epitaxial layers. The method comprises heating a reactor to a temperature at which silicon carbide source gases will form an epitaxial layer of silicon carbide on a substrate in the reactor; and then directing a flow of source and carrier gases through the heated reactor to form an epitaxial layer of silicon carbide on the substrate with the carrier gases comprising a blend of hydrogen and a second gas in which the second gas has a thermal conductivity that is less than the thermal conductivity of hydrogen so that the source gases deplete less as they pass through the reactor than they would if hydrogen is used as the sole carrier gas.
摘要翻译：公开了改进的化学气相沉积方法，其提高了碳化硅外延层的均匀性，并且对于获得较厚的外延层特别有用。该方法包括将反应器加热到碳化硅源气体将在反应器中的基底上形成碳化硅外延层的温度; 然后引导源和载气流通过加热的反应器，以在衬底上形成碳化硅的外延层，其中载气包含氢和第二气体的共混物，其中第二气体的导热系数较小比氢气的导热性好，这样当源气体通过反应器时，如果氢气用作唯一的载气，源气体就会消耗更少的气体。

16. 发明授权

US07880171B2 Minimizing degradation of SiC bipolar semiconductor devices 有权
标题翻译：最小化SiC双极半导体器件的退化
公开(公告)号：US07880171B2
公开(公告)日：2011-02-01
申请号：US11022520
申请日：2004-12-22
申请人： Joseph J. Sumakeris , Ranbir Singh , Michael James Paisley , Stephan Georg Mueller , Hudson M. Hobgood , Calvin H. Carter, Jr. , Albert Augustus Burk, Jr.
发明人： Joseph J. Sumakeris , Ranbir Singh , Michael James Paisley , Stephan Georg Mueller , Hudson M. Hobgood , Calvin H. Carter, Jr. , Albert Augustus Burk, Jr.
IPC分类号： H01L31/0312
CPC分类号： H01L29/1608 , C30B19/00 , C30B23/002 , C30B25/02 , C30B29/36 , H01L29/6606 , H01L29/66068 , H01L29/732 , H01L29/744 , H01L29/861
摘要： A bipolar device has at least one p− type layer of single crystal silicon carbide and at least one n− type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.
摘要翻译：双极器件具有至少一个单晶碳化硅的p型层和至少一个单晶碳化硅的n型层，其中在正向操作下生长的那些堆垛层错的那些部分与至少一个活动区域和设备的其余部分之间的接口。

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