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    • 17. 发明申请
    • Polishing composition for a semiconductor substrate
    • 半导体衬底抛光组合物
    • US20060113283A1
    • 2006-06-01
    • US11262852
    • 2005-11-01
    • Yasuhiro YonedaMami Shirota
    • Yasuhiro YonedaMami Shirota
    • C09K13/00B44C1/22H01L21/461
    • H01L21/31053C09G1/02C09K3/1436C09K3/1463
    • A polishing composition containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a polishing process of a semiconductor substrate, including the step of polishing a semiconductor substrate with a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a method for manufacturing a semiconductor device including the step of polishing a semiconductor substrate having a film formed on its surface, the film containing a silicon atom and having a shape with dents and projections, with a polishing pad pressed against a semiconductor substrate at a polishing load of from 5 to 100 kPa in the presence of a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium.
    • 一种抛光组合物,其含有选自丝氨酸,半胱氨酸和二羟乙基甘氨酸,二氧化铈颗粒和水性介质中的至少一种或多种氨基羧酸; 包括半导体衬底的抛光工艺,其包括用半导体衬底抛光组合物抛光半导体衬底的步骤,其包含至少一种或多种选自丝氨酸,半胱氨酸和二羟乙基甘氨酸的氨基羧酸,二氧化铈颗粒和水性 中; 一种制造半导体器件的方法,包括以下步骤:在其表面上研磨具有形成膜的半导体衬底,所述膜含有硅原子并具有凹陷和突起的形状,抛光垫在抛光时被压靠在半导体衬底上 在含有至少一种或多种选自丝氨酸,半胱氨酸和二羟乙基甘氨酸的氨基羧酸,二氧化铈颗粒和水性介质的半导体衬底抛光组合物存在下,载荷为5至100kPa。