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11. 发明授权

US07422654B2 Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor 失效
标题翻译：用于在磁场增强等离子体反应器中成形磁场的方法和装置
公开(公告)号：US07422654B2
公开(公告)日：2008-09-09
申请号：US10778933
申请日：2004-02-13
申请人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
发明人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32688
摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
摘要翻译：提供了提供对磁场的更大控制的磁场发生器。磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

12. 发明申请

US20080203056A1 METHODS FOR ETCHING HIGH ASPECT RATIO FEATURES 审中-公开
标题翻译：用于蚀刻高倍率比特征的方法
公开(公告)号：US20080203056A1
公开(公告)日：2008-08-28
申请号：US11679047
申请日：2007-02-26
申请人： JUDY WANG , Kwang-Soo Kim , Jingbao Liu , Bryan Y. Pu
发明人： JUDY WANG , Kwang-Soo Kim , Jingbao Liu , Bryan Y. Pu
IPC分类号： C23F1/00
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/321 , H01J37/32165 , H01L21/31138
摘要： Methods for forming features for high aspect ratio application in etch process are provided in the present invention. In one embodiment, the method for etching a dielectric layer disposed on a substrate includes placing a substrate having a portion of a dielectric layer exposed through a patterned photoresist layer in an etch chamber, supplying a gas mixture containing argon (Ar) gas into the etch chamber, forming a plasma from the gas mixture using dual frequency RF power and etching the exposed dielectric layer using the plasma formed from the gas mixture.
摘要翻译：在本发明中提供了用于在蚀刻工艺中形成用于高纵横比应用的特征的方法。在一个实施例中，用于蚀刻设置在衬底上的电介质层的方法包括将具有通过图案化光致抗蚀剂层暴露的介电层的一部分的衬底放置在蚀刻室中，将含有氩（Ar）气体的气体混合物供应到蚀刻室，使用双频RF功率从气体混合物形成等离子体，并使用由气体混合物形成的等离子体蚀刻暴露的介电层。

13. 发明申请

US20070249173A1 Plasma etch process using etch uniformity control by using compositionally independent gas feed 审中-公开
标题翻译：使用组成独立气体进料的等离子蚀刻工艺，使用蚀刻均匀性控制
公开(公告)号：US20070249173A1
公开(公告)日：2007-10-25
申请号：US11490885
申请日：2006-07-21
申请人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/76816 , H01J37/32091 , H01J37/32165 , H01J37/32449 , H01J37/3266
摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an inner annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power to the ceiling electrode and HF and/or LF bias power to an electrode within the electrostatic chuck. The process further includes slowing the deposition rate of the polymer near the workpiece center by injecting oxygen gas through a center or inner gas injection orifices in the center region of the ceiling electrode, and adjusting the flow rate of the oxygen gas through the center or inner gas injection orifices to minimize the difference between etch depths at the workpiece center and the workpiece periphery.
摘要翻译：等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的内部环形区域，以及通过围绕工件边缘的泵送环将反应器中的气体排出。通过在蚀刻工艺气体中产生蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，在电介质膜中蚀刻高纵横比开口，通过在天线电极中施加VHF源功率在反应器中产生等离子体和HF和/或LF偏压电力到静电卡盘内的电极。该方法还包括通过将天然气电极的中心区域中的中心区域或内部气体注入孔注入氧气来减缓聚合物靠近工件中心的沉积速率，并且调节通过中心或内部的氧气的流速气体注入孔，以最小化工件中心和工件周边处的蚀刻深度之间的差异。

14. 发明授权

US07374636B2 Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor 失效
标题翻译：在磁场增强等离子体反应器中提供均匀等离子体的方法和装置
公开(公告)号：US07374636B2
公开(公告)日：2008-05-20
申请号：US10205870
申请日：2002-07-26
申请人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu , Qi Li , Mahmoud Dahimene
发明人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu , Qi Li , Mahmoud Dahimene
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.
摘要翻译：一种用于控制磁增强等离子体反应器内的磁场梯度的方法和装置。该装置包括支撑外壳内的晶片的阴极基座，靠近外壳定位的多个电磁体，用于在外壳中产生磁场，并且磁场控制元件位于电磁体附近，用于控制靠近特定区域的磁场的晶片。

15. 发明授权

US07316199B2 Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber 失效
标题翻译：用于控制等离子体增强半导体晶片处理室中的磁场强度的方法和装置
公开(公告)号：US07316199B2
公开(公告)日：2008-01-08
申请号：US10146443
申请日：2002-05-14
申请人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Qi Li , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu
发明人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Qi Li , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.
摘要翻译：用于产生加速等离子体形成的磁场的磁场发生器放置在半导体衬底处理系统的反应室附近。磁场发生器具有四个主要的磁线圈部分，用于产生几乎平行于反应室中的支撑基座的顶表面的磁场和与主电磁线圈部分大致同轴放置的四个子磁线圈部分，以产生磁场的方向与由主电磁线圈段产生的磁场的方向相反。在磁场发生器中，相反极性的磁场在施加到主磁亚极部分和次磁线圈部分的相反方向的电流时彼此叠加。

16. 发明授权

US06273022B1 Distributed inductively-coupled plasma source 失效
标题翻译：分布式电感耦合等离子体源
公开(公告)号：US06273022B1
公开(公告)日：2001-08-14
申请号：US09039216
申请日：1998-03-14
申请人： Bryan Y. Pu , Hongching Shan , Claes Bjorkman , Kenny Doan , Mike Welch , Richard Raymond Mett
发明人： Bryan Y. Pu , Hongching Shan , Claes Bjorkman , Kenny Doan , Mike Welch , Richard Raymond Mett
IPC分类号： C23C16507
CPC分类号： H01J37/321
摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of induction coils is distributed over a geometric surface having a circular transverse section. Each coil has a transverse section which is wedge-shaped so that the adjacent sides of any two adjacent coils in the array are approximately parallel to a radius of the circular transverse section of the geometric surface. The sides of adjacent coils being parallel enhances the radial uniformity of the magnetic field produced by the coil array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the near end of each coil connects directly to electrical ground. In second and third embodiments, two coils are connected in series at the near end of each coil. In the second embodiment, the opposite (“RF hot”) end of each coil is connected to a respective balanced output of an RF power supply. In the third embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.
摘要翻译：用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。在第一方面，感应线圈阵列分布在具有圆形横截面的几何表面上。每个线圈具有楔形的横截面，使得阵列中任何两个相邻线圈的相邻侧面几乎平行于几何表面的圆形横截面的半径。相邻线圈的平行侧面增强了由线圈阵列产生的磁场的径向均匀性。在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线的转弯接近电接地电位。在一个实施例中，每个线圈的近端直接连接到电气接地。在第二和第三实施例中，两个线圈在每个线圈的近端串联连接。在第二实施例中，每个线圈的相对（“RF热”）端连接到RF电源的相应的平衡输出端。在第三实施例中，一个线圈的热端连接到RF电源的不平衡输出，另一个线圈的热端通过电容器连接到电接地，该电容器以与第二线圈的频率谐振的电容器射频电源。

17. 发明授权

US06829056B1 Monitoring dimensions of features at different locations in the processing of substrates 失效
标题翻译：监测基板加工中不同位置特征的尺寸
公开(公告)号：US06829056B1
公开(公告)日：2004-12-07
申请号：US10646943
申请日：2003-08-21
申请人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
发明人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
IPC分类号： G01B1114
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67069
摘要： A substrate processing apparatus has a chamber having a substrate support, gas distributor, gas energizer, and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.
摘要翻译：基板处理装置具有具有基板支撑件，气体分配器，气体激励器和排气口的腔室。提供过程监视器以监测衬底的第一区域中的特征并产生相应的第一信号，并且监测衬底的第二区域中的特征并产生第二信号。室控制器接收并评估第一和第二信号，并相对于信号操作室。例如，腔室控制器可以根据信号值选择工艺配方。腔室控制器还可以在第一处理扇区中将处理参数设置在第一电平处，并在第二处理扇区中将第二电平设置为第二电平。该装置提供一个闭合的控制回路以独立地监测和控制基板的不同区域处的特征的处理。

18. 发明授权

US06513452B2 Adjusting DC bias voltage in plasma chamber 失效
标题翻译：调整等离子体室内的直流偏置电压
公开(公告)号：US06513452B2
公开(公告)日：2003-02-04
申请号：US09841804
申请日：2001-04-24
申请人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
发明人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
IPC分类号： C23C1600
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.
摘要翻译：一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

19. 发明授权

US06284093B1 Shield or ring surrounding semiconductor workpiece in plasma chamber 有权
标题翻译：在等离子体室内围绕半导体工件的屏蔽或环
公开(公告)号：US06284093B1
公开(公告)日：2001-09-04
申请号：US09665484
申请日：2000-09-20
申请人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
发明人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
IPC分类号： H01J100
CPC分类号： H01L21/67126 , H01J37/32623 , H01J37/32633 , H01J37/3266 , H01L21/6831 , H01L21/6833 , H01L21/68721 , H01L21/68735 , H02N13/00 , Y10S156/915
摘要： A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.
摘要翻译：围绕等离子体室中的半导体工件的环或环。根据一个方面，所述环具有提升的套环部分，其内表面以与工件的平面成钝角定向，该角度优选为135°。这种角度取向导致离子轰击提升的轴环的内表面沿更平行于工件的平面的方向散射，从而减少工件周边处的任何介电屏蔽的侵蚀，并且改善等离子体中的空间不均匀性由于这种周边附近的任何过量的离子密度而产生的过程。在第二方面，工件被电介质屏蔽围绕，屏蔽被非介电环覆盖，该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。在第三方面中，电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体，从而改善靠近工件周边的等离子体工艺的空间均匀性。在第四方面，方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。

20. 发明授权

US06568346B2 Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply 失效
标题翻译：分布式电感耦合等离子体源和用于将感应线圈耦合到RF电源的电路
公开(公告)号：US06568346B2
公开(公告)日：2003-05-27
申请号：US09929902
申请日：2001-08-14
申请人： Bryan Y. Pu , Hongching Shan , Claes Bjorkman , Kenny Doan , Mike Welch , Richard Raymond Mett
发明人： Bryan Y. Pu , Hongching Shan , Claes Bjorkman , Kenny Doan , Mike Welch , Richard Raymond Mett
IPC分类号： C23C16507
CPC分类号： H01J37/321
摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.
摘要翻译：用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。在第一方面，楔形感应线圈阵列分布在一个圆周围。相邻线圈的侧面是平行的，从而增强阵列产生的磁场的径向均匀性。在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线的转弯接近电接地电位。在一个实施例中，一个线圈的热端连接到RF电源的不平衡输出端，另一个线圈的热端通过电容器连接到电接地，电容器以RF的频率与后一个线圈谐振电源。

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