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11. 发明授权

US5721377A Angular velocity sensor with built-in limit stops 失效
标题翻译：角速度传感器，内置限位件
公开(公告)号：US5721377A
公开(公告)日：1998-02-24
申请号：US681243
申请日：1996-07-22
申请人： Juergen Kurle , Kurt Weiblen , Horst Muenzel , Helmut Baumann , Klaus Heyers , Markus Lutz
发明人： Juergen Kurle , Kurt Weiblen , Horst Muenzel , Helmut Baumann , Klaus Heyers , Markus Lutz
IPC分类号： G01C19/56 , G01P9/04
CPC分类号： G01C19/5712 , G01P2015/0814
摘要： In an angular velocity sensor, an acceleration sensor is arranged on a resonator formed of a multilayer substrate and attached to a resonating bar. The multilayer substrate includes a top silicon layer, an insulating sacrificial layer arranged below the top silicon layer, and a bottom silicon layer arranged below the insulating sacrificial layer. An excitor causes the resonator to vibrate while a limit stop, configured out of the multilayer substrate, limits the movement of the resonator.
摘要翻译：在角速度传感器中，加速度传感器布置在由多层基板形成并且附接到谐振杆的谐振器上。多层基板包括顶部硅层，布置在顶部硅层下方的绝缘牺牲层和布置在绝缘牺牲层下方的底部硅层。激励器使谐振器振动，而由多层基板构成的极限停止限制了谐振器的移动。

12. 发明申请

US20090206438A1 Semiconductor component 有权
标题翻译：半导体元件
公开(公告)号：US20090206438A1
公开(公告)日：2009-08-20
申请号：US11664857
申请日：2005-09-12
申请人： Peter Flohrs , Alfred Goerlach , Peter Urbach , Wolfgang Feiler , Ning Qu , Klaus Heyers
发明人： Peter Flohrs , Alfred Goerlach , Peter Urbach , Wolfgang Feiler , Ning Qu , Klaus Heyers
IPC分类号： H01L29/66 , H01L21/24 , H01L21/50
CPC分类号： H01L28/20 , G01K7/22 , H01L27/0802 , H01L29/8605 , H01L29/8611
摘要： A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.
摘要翻译：一种半导体元件及其制造方法，该半导体元件具有很大程度上取决于温度的电阻特性。该电阻特性通过半导体元件的特殊的多层结构获得，一层被设计成例如在n掺杂区域中存在多个p掺杂区域，所述区域被短路在一侧通过金属镀层。例如，半导体组件可以用于通过集成到导体中来减小电流峰值。在冷态中，当由于流动电流而加热半导体元件时，半导体元件具有高电阻，其变得明显较低。

13. 发明授权

US06825057B1 Thermal membrane sensor and method for the production thereof 失效
标题翻译：热膜传感器及其制造方法
公开(公告)号：US06825057B1
公开(公告)日：2004-11-30
申请号：US09355373
申请日：1999-10-25
申请人： Klaus Heyers , Wilhelm Frey
发明人： Klaus Heyers , Wilhelm Frey
IPC分类号： H01L2100
CPC分类号： G01F1/6845 , G01K7/028
摘要： A process for manufacturing a membrane sensor over a silicon substrate, preferably a thermal membrane sensor. A thin layer of silicon carbide or silicon nitride is deposited over an area of porous silicon formed in the surface of the substrate, and then openings that extend as far as the layer of porous silicon are formed in the silicon carbide or silicon nitride layer via a dry etching process. Next, semiconductor structures and conductor path structures are implanted into the upper surface of the membrane layer via lithographic steps, and then the sacrificial layer of porous silicon is removed using a suitable solvent such as ammonia. Thus an empty space that thermally isolates the sensor membrane from the substrate is created beneath the membrane layer.
摘要翻译：一种用于在硅衬底，优选热膜传感器上制造膜传感器的方法。在衬底表面上形成的多孔硅的一个区域上沉积一层薄的碳化硅或氮化硅，然后在碳化硅或氮化硅层中形成延伸至多孔硅层的开口，干蚀刻工艺。接下来，通过光刻步骤将半导体结构和导体路径结构注入膜层的上表面，然后使用合适的溶剂如氨除去多孔硅的牺牲层。因此，在膜层之下产生将隔离传感器膜与基底的空白空间。

14. 发明授权

US06724023B2 Field effect transistor, especially for use as a sensor element or acceleration sensor 失效
标题翻译：场效应晶体管，特别用作传感器元件或加速度传感器
公开(公告)号：US06724023B2
公开(公告)日：2004-04-20
申请号：US09838062
申请日：2001-04-19
申请人： Klaus Heyers , Bernhard Elsner
发明人： Klaus Heyers , Bernhard Elsner
IPC分类号： H01L2984
CPC分类号： H01L29/84 , G01P15/0802 , G01P15/124 , G01P2015/0814
摘要： A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.
摘要翻译：描述适合用作传感器元件或加速度传感器的场效应晶体管。为此，平面衬底内的场效应晶体管具有通过沟道区彼此分离的漏极区和源极区。此外，提供栅极电极，其布置成在沟道区域上基板上基本上自支撑。栅电极被柔性地支撑，使得作用在其上的具有与衬底的表面平行的部件的外力导致栅极平行于衬底的表面的偏转。还描述了一种方法，其中在第一方法步骤中，在CMOS工艺中制造或制造具有漏极区域，源极区域和沟道区域的集成电路，此后，在第二方法步骤中，使用电镀添加剂技术在集成电路上产生基本上自支撑的栅电极。

15. 发明授权

US06645800B2 Method for the production of a field-effect structure 失效
标题翻译：生产场效应结构的方法
公开(公告)号：US06645800B2
公开(公告)日：2003-11-11
申请号：US10016259
申请日：2001-10-26
申请人： Wilhelm Frey , Franz Laermer , Klaus Heyers
发明人： Wilhelm Frey , Franz Laermer , Klaus Heyers
IPC分类号： H01L218238
CPC分类号： G01P15/0802 , G01P15/124 , H01L21/3065
摘要： In a method for the production of a field-effect structure and a field-effect structure, a movable gate structure is arranged above a gate region in a substrate between a drain and a source. The gate region is covered with a gate oxide. The movable gate structure is created from silicon-germanium and in an intermediate step of the production method is arranged on a germanium sacrificial layer on the gate oxide.
摘要翻译：在制造场效应结构和场效应结构的方法中，可动栅极结构布置在漏极和源极之间的衬底中的栅极区域的上方。栅极区域被栅极氧化物覆盖。可移动栅极结构由硅锗制成，并且在制造方法的中间步骤中，栅极氧化物上的锗牺牲层上布置有可动栅结构。

16. 发明授权

US5959208A Acceleration sensor 失效
标题翻译：加速度传感器
公开(公告)号：US5959208A
公开(公告)日：1999-09-28
申请号：US933446
申请日：1997-09-18
申请人： Horst Muenzel , Dietrich Schubert , Alexandra Boehringer , Michael Offenberg , Klaus Heyers , Markus Lutz
发明人： Horst Muenzel , Dietrich Schubert , Alexandra Boehringer , Michael Offenberg , Klaus Heyers , Markus Lutz
IPC分类号： G01P15/02 , G01P3/48 , G01P9/04 , G01P15/08 , G01P15/125 , H01L29/84
CPC分类号： G01P3/48 , G01P15/0802 , G01P15/125 , G01P2015/0814 , Y10S148/135 , Y10S148/159
摘要： An acceleration sensor is composed of a three layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system.
摘要翻译：加速度传感器由三层系统组成。将加速度传感器和导体轨迹从第三层图案化。导体轨道通过凹部与第三层的其它区域电绝缘，并且通过第二电绝缘层与第一层电绝缘。以这种方式，实现了由三层系统构成的简单的电接触。

17. 发明授权

US5723353A Process for manufacturing a sensor 失效
标题翻译：传感器制造工艺
公开(公告)号：US5723353A
公开(公告)日：1998-03-03
申请号：US599838
申请日：1996-02-12
申请人： Horst Muenzel , Dietrich Schubert , Alexandra Boehringer , Michael Offenberg , Klaus Heyers , Markus Lutz
发明人： Horst Muenzel , Dietrich Schubert , Alexandra Boehringer , Michael Offenberg , Klaus Heyers , Markus Lutz
IPC分类号： G01P15/02 , G01P3/48 , G01P9/04 , G01P15/08 , G01P15/125 , H01L29/84 , H01L21/70
CPC分类号： G01P3/48 , G01P15/0802 , G01P15/125 , G01P2015/0814 , Y10S148/135 , Y10S148/159
摘要： An acceleration sensor is composed of a three-layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system.
摘要翻译：加速度传感器由三层系统组成。将加速度传感器和导体轨迹从第三层图案化。导体轨道通过凹部与第三层的其它区域电绝缘，并且通过第二电绝缘层与第一层电绝缘。以这种方式，实现了由三层系统构成的简单的电接触。

18. 发明授权

US07554249B2 Electric motor 有权
标题翻译：电动马达
公开(公告)号：US07554249B2
公开(公告)日：2009-06-30
申请号：US10541783
申请日：2004-04-14
申请人： Hans Braun , Ning Qu , Klaus Heyers , Heinz Eisenschmid , Carsten Raudzis , Frank Schatz
发明人： Hans Braun , Ning Qu , Klaus Heyers , Heinz Eisenschmid , Carsten Raudzis , Frank Schatz
IPC分类号： H02K3/46
CPC分类号： F02N11/10 , F02N11/0859 , F02N15/067 , F02N2300/106 , H01C7/042
摘要： An electric motor, in particular a starter device for internal combustion engines in which a current-limiting electric resistor (57) with a negative temperature coefficient is connected at the beginning of the main current path (49) of an electromagnetically excitable rotor (53) of the electric motor (16). The electric resistor (57) contains at least one monocrystalline semiconductor.
摘要翻译：电动机，特别是用于内燃机的起动装置，其中具有负温度系数的限流电阻器（57）在电磁可激发转子（53）的主电流路径（49）的开始处连接，的电动机（16）。电阻器（57）包含至少一个单晶半导体。

19. 发明申请

US20060138778A1 Electrica motor 有权
标题翻译：电动马达
公开(公告)号：US20060138778A1
公开(公告)日：2006-06-29
申请号：US10541783
申请日：2004-04-14
申请人： Hans Braun , Ning Qu , Klaus Heyers , Heinz Eisenschmid , Carsten Raudzis , Frank Schatz
发明人： Hans Braun , Ning Qu , Klaus Heyers , Heinz Eisenschmid , Carsten Raudzis , Frank Schatz
IPC分类号： F02N11/00 , H02P9/04
CPC分类号： F02N11/10 , F02N11/0859 , F02N15/067 , F02N2300/106 , H01C7/042
摘要： An electric motor, in particular a starter device for internal combustion engines in which a current-limiting electric resistor (57) with a negative temperature coefficient is connected at the beginning of the main current path (49) of an electromagnetically excitable rotor (53) of the electric motor (16). The electric resistor (57) contains at least one monocrystalline semiconductor.
摘要翻译：电动机，特别是用于内燃机的起动装置，其中具有负温度系数的限流电阻器（57）在电磁可激发转子（53）的主电流路径（49）的开始处连接，的电动机（16）。电阻器（57）包含至少一个单晶半导体。

20. 发明授权

US06592664B1 Method and device for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate 有权
标题翻译：用于从基底的沉积表面上的反应性气体外延沉积原子或分子的方法和装置
公开(公告)号：US06592664B1
公开(公告)日：2003-07-15
申请号：US09656546
申请日：2000-09-06
申请人： Wilhelm Frey , Franz Laermer , Klaus Heyers
发明人： Wilhelm Frey , Franz Laermer , Klaus Heyers
IPC分类号： C30B2508
CPC分类号： C30B25/105 , Y10T117/10
摘要： A method for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate is described. The method includes the following steps: a first amount of energy is supplied by heating at least the deposition surface; and an ionized inert gas is conducted, at least from time to time, onto the deposition surface in order to supply, at least from time to time, a second amount of energy through the effect of ions of the ionized inert gas on the deposition surface. The first amount of energy is less than the energy amount necessary for the epitaxial deposition of atoms or molecules of the reactive gas on the deposition surface. A sum of the first energy amount and the second energy equaling, at least from time to time, a total amount of energy that is sufficient for the epitaxial deposition of atoms or molecules of the reactive gas onto the deposition surface.
摘要翻译：描述了从衬底的沉积表面上的反应性气体外延沉积原子或分子的方法。该方法包括以下步骤：通过至少加热沉积表面来提供第一量的能量; 并且电离惰性气体至少不时地进行到沉积表面上，以便至少通过电离惰性气体的离子在沉积表面上的时间来供应第二量的能量。第一量的能量小于沉积表面上的反应气体的原子或分子的外延沉积所需的能量。至少不时地使第一能量和第二能量的总和等于足以将反应气体的原子或分子外延沉积到沉积表面上的能量的总量。

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