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11. 发明授权

US06921704B1 Method for improving MOS mobility 有权
标题翻译：提高MOS迁移率的方法
公开(公告)号：US06921704B1
公开(公告)日：2005-07-26
申请号：US10700557
申请日：2003-11-05
申请人： David Wu , Akif Sultan , Bin Yu
发明人： David Wu , Akif Sultan , Bin Yu
IPC分类号： H01L21/762 , H01L21/764 , H01L21/8234 , H01L21/8238 , H01L21/76
CPC分类号： H01L21/764 , H01L21/76224 , H01L21/823481 , H01L21/823878
摘要： A method of forming a silicon-on-insulator semiconductor device including providing a substrate and forming a trench in the substrate, wherein the trench includes opposing side walls extending upwardly from a base of the trench. The method also includes depositing at least two insulating layers into the trench to form a shallow trench isolation structure, wherein an innermost of the insulating layers substantially conforms to the base and the two side walls of the trench and an outermost of the insulating layers spans the side walls of the trench so that a gap is formed between the insulating layers in the trench. The gap creates compressive forces within the shallow trench isolation structure, which in turn creates tensile stress within the surrounding substrate to enhance mobility of the device.
摘要翻译：一种形成绝缘体上半导体器件的方法，包括提供衬底并在衬底中形成沟槽，其中沟槽包括从沟槽的基底向上延伸的相对的侧壁。该方法还包括将至少两个绝缘层沉积到沟槽中以形成浅沟槽隔离结构，其中绝缘层的最内层基本上与基底一致并且沟槽的两个侧壁和绝缘层的最外层横跨沟槽的侧壁，使得在沟槽中的绝缘层之间形成间隙。间隙在浅沟槽隔离结构内产生压缩力，这反过来在周围的衬底内产生拉伸应力，以增强器件的移动性。

12. 发明申请

US20050101284A1 Scaling adjustment using pilot signal 有权
标题翻译：使用导频信号进行缩放调整
公开(公告)号：US20050101284A1
公开(公告)日：2005-05-12
申请号：US11011567
申请日：2004-12-14
申请人： David Wu
发明人： David Wu
IPC分类号： H04H1/00 , H04H20/48 , H04N5/60 , H04H5/00 , H04B1/00 , H04B1/06
CPC分类号： H04N5/607 , H04H20/48 , H04N5/602 , H04N21/8106 , H04N21/85406
摘要： A demodulator (10) converts television signals to video baseband signals and audio baseband signals including stereo signals representing a right channel signal value, a left channel signal value and a pilot signal having an amplitude. A DSP (60) recursively finds a coefficient value for scaling that keeps the pilot signal amplitude within a range of values, there by improving baseband signal quality, such as stereo separation of stereo signals within the baseband signals.
摘要翻译：解调器（10）将电视信号转换为视频基带信号和音频基带信号，包括表示右声道信号值，左声道信号值和具有振幅的导频信号的立体声信号。 DSP（60）递归地找到用于缩放的系数值，其通过改善基带信号质量（例如基带信号内的立体声信号的立体声分离）来将导频信号幅度保持在值的范围内。

13. 发明申请

US20050016348A1 Cutting device for spring manufacturing machines 失效
标题翻译：弹簧制造机切割装置
公开(公告)号：US20050016348A1
公开(公告)日：2005-01-27
申请号：US10623765
申请日：2003-07-22
申请人： David Wu
发明人： David Wu
IPC分类号： B21F3/02 , B21F11/00 , B26D5/16
CPC分类号： B21F11/005 , B21F3/02 , Y10S83/95 , Y10T83/8843 , Y10T83/8873 , Y10T83/8874
摘要： A cutting device for spring manufacturing machines includes an actuator, a transmission mechanism and a sliding mechanism. The actuator includes a connecting rod with a pin hole formed therein. The sliding mechanism includes a track, a slider and a switching pin. The slider including an axial hole slidably moves back and forth in the track. The switching pin can be inserted through or remove from the first axial hole and the pivot hole so that the cutting device can perform either a linear direction or an oval trace cutting in coil spring winding machine.
摘要翻译：用于弹簧制造机的切割装置包括致动器，传动机构和滑动机构。致动器包括其中形成有销孔的连杆。滑动机构包括轨道，滑块和切换销。滑动件包括轴向孔，其可滑动地在轨道中前后移动。切换销可以插入通过或从第一轴向孔和枢轴孔移除，使得切割装置可以在螺旋弹簧卷绕机中执行线性方向或椭圆形轨迹切割。

14. 发明授权

US06777281B1 Maintaining LDD series resistance of MOS transistors by retarding dopant segregation 失效
标题翻译：通过延迟掺杂剂分离来维持MOS晶体管的LDD串联电阻
公开(公告)号：US06777281B1
公开(公告)日：2004-08-17
申请号：US10214361
申请日：2002-08-08
申请人： Daniel Kadosh , Scott D. Luning , Akif Sultan , David Wu
发明人： Daniel Kadosh , Scott D. Luning , Akif Sultan , David Wu
IPC分类号： H01L218238
CPC分类号： H01L29/6659 , H01L21/3115 , H01L21/31155 , H01L21/823814 , H01L29/6656
摘要： A method of manufacturing a semiconductor device, comprising steps of: (a) providing a semi conductor substrate including at least one dopant species-containing region extending to a surface of the substrate; (b) forming a thin liner oxide layer on the surface of the substrate; and (c) incorporating in the thin line oxide layer at least one species which substantially prevents, or at least reduces, segregation therein of the dopant species arising from movement thereinto from the at least one dopant species-containing region.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：（a）提供半导体衬底，其包括至少一个延伸到衬底表面的含掺杂物种的区域;（b）在衬底的表面上形成薄的衬里氧化物层基材; 和（c）在细线氧化物层中并入至少一种物质，其至少一种物质，其基本上防止或至少减少其中从至少一种含掺杂物种的区域移动而引起的掺杂物质的偏析。

15. 发明授权

US06727136B1 Formation of ultra-shallow depth source/drain extensions for MOS transistors 有权
标题翻译：形成MOS晶体管的超浅深度源极/漏极延伸
公开(公告)号：US06727136B1
公开(公告)日：2004-04-27
申请号：US10273291
申请日：2002-10-18
申请人： James F. Buller , Derick J. Wristers , David Wu , Akif Sultan
发明人： James F. Buller , Derick J. Wristers , David Wu , Akif Sultan
IPC分类号： H01L21336
CPC分类号： H01L29/6659 , H01L21/823418 , H01L21/823814 , H01L29/1054 , H01L29/7833
摘要： A method of manufacturing a semiconductor device, comprising sequential steps of: (a) providing a semiconductor substrate including a pre-selected thickness strained lattice layer of a first semiconductor material at an upper surface thereof and an underlying layer of a second semiconductor material; and (b) introducing a dopant-containing species of one conductivity type into at least one pre-selected portion of the strained lattice layer of first semiconductor material to form a dopant-containing region therein with a junction at a depth substantially equal to the pre-selected thickness, wherein the second semiconductor material of the underlying layer inhibits diffusion thereinto of the dopant-containing species from the strained lattice layer, thereby controlling/limiting the depth of the junction to substantially the pre-selected thickness of the strained lattice layer.
摘要翻译：一种制造半导体器件的方法，包括以下顺序的步骤：（a）提供半导体衬底，该半导体衬底在其上表面包括预先选定的第一半导体材料的应变晶格层和第二半导体材料的下层; 和（b）将含有一种导电类型的含掺杂剂的物质引入到第一半导体材料的应变晶格层的至少一个预先选择的部分中，以在其中形成含有掺杂剂的区域，其中接合部的深度基本上等于预先 - 选择的厚度，其中下层的第二半导体材料抑制来自应变晶格层的含掺杂剂物质的扩散，从而将结的深度控制/限制到基本上预应变晶格层的预选厚度。

16. 发明授权

US06695324B1 3-fold type folding collapsible golf cart 失效
标题翻译： 3折型折叠式高尔夫球车
公开(公告)号：US06695324B1
公开(公告)日：2004-02-24
申请号：US10216294
申请日：2002-08-12
申请人： David Wu
发明人： David Wu
IPC分类号： B62B100
CPC分类号： A63B55/60 , A63B2210/50 , B62B1/045 , B62B2202/404 , B62B2205/123 , B62B2205/145 , B62B2205/20 , Y10S280/06
摘要： A 3-fold folding collapsible golf cart, which includes an upper rod member, a bottom rod member, and a lower rod member, the lower rod having a top end pivoted to the upper rod member and locked by a locking mechanism and a bottom end coupled to the bottom rod member by a coupling device, the coupling device having a locating frame supported on a torsional spring and adapted for locking the lower rod member in the operative position and, the lower member being disengaged from the locating frame for folding when the user presses the locating frame with a foot to conquer the spring force of the torsional spring.
摘要翻译：一种三折折叠式折叠高尔夫球车，其包括上杆构件，底杆构件和下杆构件，所述下杆具有枢转到所述上杆构件并由锁定机构锁定的顶端，并且底端通过联接装置联接到底杆构件，联接装置具有支撑在扭转弹簧上并适于将下杆构件锁定在操作位置的定位框架，并且下构件从定位框架脱离以便在当用户用脚按压定位框架以克服扭力弹簧的弹簧力。

17. 发明授权

US06482726B1 Control trimming of hard mask for sub-100 nanometer transistor gate 有权
标题翻译：对100纳米晶体管栅极的硬掩模进行控制修整
公开(公告)号：US06482726B1
公开(公告)日：2002-11-19
申请号：US09690152
申请日：2000-10-17
申请人： Massud Aminpur , David Wu , Scott Luning
发明人： Massud Aminpur , David Wu , Scott Luning
IPC分类号： H01L213205
CPC分类号： H01L21/28123 , H01L29/6659
摘要： A method is provided, the method including forming a gate dielectric layer above a substrate layer, forming a gate conductor layer above the gate dielectric layer, forming a first hard mask layer above the gate conductor layer, and forming a second hard mask layer above the first hard mask layer. The method also includes forming a trimmed photoresist mask above the second hard mask layer, and forming a patterned hard mask in the second hard mask layer using the trimmed photoresist mask to remove portions of the second hard mask layer, the patterned hard mask having a first dimension. The method further includes forming a selectively etched hard mask in the first hard mask layer by removing portions of the first hard mask layer adjacent the patterned hard mask, the selectively etched hard mask having a second dimension less than the first dimension, and forming a gate structure using the selectively etched hard mask to remove portions of the gate conductor layer above the gate dielectric layer.
摘要翻译：提供了一种方法，该方法包括在衬底层上方形成栅介质层，在栅极介电层上方形成栅极导体层，在栅极导体层之上形成第一硬掩模层，并形成第二硬掩模层第一硬掩模层。该方法还包括在第二硬掩模层之上形成修整的光致抗蚀剂掩模，并且在第二硬掩模层中使用经修剪的光致抗蚀剂掩模形成图案化的硬掩模以去除第二硬掩模层的部分，图案化硬掩模具有第一尺寸。该方法还包括通过去除与图案化的硬掩模相邻的第一硬掩模层的部分来形成第一硬掩模层中的选择性蚀刻的硬掩模，该选择性蚀刻的硬掩模具有小于第一尺寸的第二尺寸，以及形成栅极结构，其使用选择性蚀刻的硬掩模以去除栅极介电层上方的栅极导体层的部分。

18. 发明授权

US06232208B1 Semiconductor device and method of manufacturing a semiconductor device having an improved gate electrode profile 有权
标题翻译：具有改进的栅电极轮廓的半导体器件和制造半导体器件的方法
公开(公告)号：US06232208B1
公开(公告)日：2001-05-15
申请号：US09187428
申请日：1998-11-06
申请人： David Wu , Dong-Hyuk Ju
发明人： David Wu , Dong-Hyuk Ju
IPC分类号： H01L213205
CPC分类号： H01L29/4916 , H01L21/28035 , H01L21/82385 , H01L29/42376 , H01L29/6659
摘要： A semiconductor device is provided with a gate electrode having a substantially rectangular profile by depositing a layer of amorphous or microcrystalline silicon. The amorphous or microcrystalline silicon is doped with impurities, before patterning to form the gate electrode, to reduce gate depletion. The doped gate electrode layer is then patterned to form a gate electrode having a substantially rectangular profile.
摘要翻译：通过沉积非晶或微晶硅层，半导体器件设置有具有基本上矩形轮廓的栅电极。在构图形成栅电极之前，非晶或微晶硅掺杂有杂质，以减少栅极耗尽。然后对掺杂的栅电极层进行构图以形成具有大致矩形轮廓的栅电极。

19. 发明授权

US6126182A Wheel holder assembly and main shaft arrangement of a golf cart 失效
标题翻译：高尔夫球车的车轮组件和主轴装置
公开(公告)号：US6126182A
公开(公告)日：2000-10-03
申请号：US136063
申请日：1998-08-19
申请人： David Wu
发明人： David Wu
IPC分类号： B62B1/04 , B62B3/02
CPC分类号： B62B1/045 , B62B2202/404 , Y10S280/06
摘要： A wheel holder assembly and main shaft arrangement includes a main shaft made of a triangular section bar and having an upper bag cradle and a lower bag cradle for holding a golf bag, and a wheel holder assembly mounted on the main shaft to hold a pair of wheels, the wheel holder assembly including a mounting frame fastened to the main shaft, two wheel frames each holding a wheel, two pairs of legs respectively coupled between the mounting frame and the wheel frames at two opposite sides of the main shaft, and two links respectively pivotably connected between the legs and the upper bag cradle, the mounting frame having a hollow frame base with a triangular inner diameter sleeved onto the main shaft and fixedly secured thereto by fastening means and two substantially U-shaped coupling plates integral with the hollow frame base at two opposite sides, the main shaft having a first sloping side wall and a second sloping side wall joined at the top and a bottom side wall connected between the first sloping side wall and the second sloping side wall at the bottom; the U-shaped coupling plates of the mounting frame each having two parallel walls closely attached to the top ends of the legs at top and bottom sides and respectively supported on the sloping side walls of the main shaft.
摘要翻译：轮架组件和主轴装置包括由三角形截面杆制成的主轴，具有用于保持高尔夫球袋的上袋支架和下袋支架，以及安装在主轴上以保持一对车轮组件，其包括固定在主轴上的安装框架，每个保持车轮的两个车轮框架，分别在主轴的两个相对侧分别联接在安装框架和轮架之间的两对脚，以及两个连杆分别可枢转地连接在腿和上袋支架之间，安装框架具有中空框架底座，其具有套在主轴上的三角形内径，并通过紧固装置固定到其上，并且两个大致U形的联接板与中空框架基部在两个相对的两侧，主轴具有在顶部连接的第一倾斜侧壁和第二倾斜侧壁，以及连接在底部的第一倾斜侧壁和第二倾斜侧壁; 安装框架的U形联接板各自具有两个平行的壁，其在顶部和底部侧面紧密地附接到腿的顶端，并且分别支撑在主轴的倾斜侧壁上。

20. 外观设计

USD403391S Personal golf ball and tee holder with a time display 失效
公开(公告)号：USD403391S
公开(公告)日：1998-12-29
申请号：US081380
申请日：1997-12-31
申请人： David Wu
设计人： David Wu

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