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11. 发明授权

US08523996B2 Method of fabricating liquid for oxide thin film 有权
标题翻译：制造氧化物薄膜液体的方法
公开(公告)号：US08523996B2
公开(公告)日：2013-09-03
申请号：US12739657
申请日：2008-02-14
申请人： Hyun Jae Kim , Kyung Ho Kim , Gun Hee Kim , Tae Hoon Jeong , Hyun Soo Shin , Won Jun Park , Yun Jung Choi , Ka Young Lee
发明人： Hyun Jae Kim , Kyung Ho Kim , Gun Hee Kim , Tae Hoon Jeong , Hyun Soo Shin , Won Jun Park , Yun Jung Choi , Ka Young Lee
IPC分类号： C23C18/08 , C23C30/00 , C23C18/12
CPC分类号： C23C6/00 , C23C18/08 , C23C18/1216 , C23C18/1254 , C23C30/00 , H01L21/02554 , H01L21/02565 , H01L21/02628
摘要： A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method.
摘要翻译：提供一种制造用于氧化物薄膜的液体的方法，其包括将选自锌化合物，铟化合物，镓化合物，锡化合物和铊化合物的至少两种分散体与对应于所选择的分散体的分散介质以形成分散体系，并在预定温度下将分散体系搅拌并老化预定时间，其中锌化合物与铟化合物，镓化合物，锡化合物和铊化合物为1:0.1至1:2。根据本发明，用于氧化物薄膜的液体可以通过溶胶 - 凝胶法制造，使其能够以简单且低成本的方式与常规真空沉积方法相反地进行批量生产。

12. 发明授权

US07995023B2 Flat panel display and method for driving the same 有权
标题翻译：平板显示器及其驱动方法
公开(公告)号：US07995023B2
公开(公告)日：2011-08-09
申请号：US11478169
申请日：2006-06-28
申请人： Jae Kyeong Jeong , Jae Bon Koo , Hyun Soo Shin , Se Yeoul Kwon , Yeon Gon Mo , Keum Nam Kim
发明人： Jae Kyeong Jeong , Jae Bon Koo , Hyun Soo Shin , Se Yeoul Kwon , Yeon Gon Mo , Keum Nam Kim
IPC分类号： G09G3/38
CPC分类号： G02F1/13458 , G02F1/13452 , G02F1/1362 , G02F1/136286 , G02F1/1368 , H01L27/3276 , H01L29/78648 , H01L51/52
摘要： A flat panel display and method for driving the same. The flat panel display includes a conductive substrate forming an image display unit having at least one thin film transistor and a pad unit including a plurality of terminals, wherein the conductive substrate is laminated with a plurality of insulating layers to form the image display unit and the pad unit; a substrate-exposing part for exposing the conductive substrate is formed by removing at least one area of the insulating layers formed on the pad unit; a system control panel for supplying a reverse bias voltage through the substrate-exposing part, wherein the system control panel is electrically connected with the pad unit; and a metal member for transferring the reverse bias voltage to the conductive substrate, wherein the metal member is formed between the substrate-exposing part and the system control panel.
摘要翻译：一种平板显示器及其驱动方法。平板显示器包括形成具有至少一个薄膜晶体管的图像显示单元的导电基板和包括多个端子的焊盘单元，其中导电基板层叠有多个绝缘层以形成图像显示单元，并且垫单位通过去除在衬垫单元上形成的绝缘层的至少一个区域来形成用于暴露导电衬底的衬底暴露部分; 用于通过所述衬底暴露部分提供反向偏置电压的系统控制面板，其中所述系统控制面板与所述衬垫单元电连接; 以及用于将所述反向偏置电压传送到所述导电基板的金属构件，其中所述金属构件形成在所述基板曝光部和所述系统控制面板之间。

13. 发明授权

US07727823B2 Flat panel display and method for driving the same 有权
标题翻译：平板显示器及其驱动方法
公开(公告)号：US07727823B2
公开(公告)日：2010-06-01
申请号：US11477101
申请日：2006-06-27
申请人： Jae Kyeong Jeong , Jae Bon Koo , Hyun Soo Shin , Se Yeoul Kwon , Yeon Gon Mo , Keum Nam Kim
发明人： Jae Kyeong Jeong , Jae Bon Koo , Hyun Soo Shin , Se Yeoul Kwon , Yeon Gon Mo , Keum Nam Kim
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78603 , H01L27/12 , H01L27/1214 , H01L27/1218 , H01L29/78606 , H01L29/78648
摘要： A flat panel display for preventing a thin film transistor from deteriorating due to voltage, static electricity, and external force, accidentally applied to a substrate, and a method for driving the same. The flat panel display includes a conductive substrate, at least one insulating layer formed on the conductive substrate, at least one thin film transistor formed on the conductive substrate, and a ground formed in a region of the conductive substrate to ground the conductive substrate. Thus, the deterioration of the thin film transistor that would be generated by voltage, static electricity, or external force, accidentally applied to the conductive substrate can be substantially prevented and the performance of the display is enhanced.
摘要翻译：用于防止薄膜晶体管由于电压，静电和外力而意外施加到基板的劣化的平板显示器及其驱动方法。平板显示器包括导电基板，形成在导电基板上的至少一个绝缘层，形成在导电基板上的至少一个薄膜晶体管，以及形成在导电基板的区域中的接地导电基板的接地。因此，可以基本上防止意外地施加到导电基板上的由电压，静电或外力产生的薄膜晶体管的劣化，从而提高显示器的性能。

14. 发明授权

US07338870B2 Methods of fabricating semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07338870B2
公开(公告)日：2008-03-04
申请号：US11026714
申请日：2004-12-30
申请人： Hyun Soo Shin
发明人： Hyun Soo Shin
IPC分类号： H01L21/336
CPC分类号： H01L21/3003 , H01L21/823481 , H01L29/66575
摘要： Methods of recovering damage on a semiconductor device by performing a hydrogen annealing process are disclosed. An example disclosed method includes forming an STI structure on a semiconductor substrate; forming a gate electrode and spacers on the sidewalls of the gate electrode; implanting ions into source and drain regions and performing a hydrogen annealing process; and performing a thermal treatment for the resulting structure to diffuse and align the ions in the source/drain region.
摘要翻译：公开了通过进行氢退火处理在半导体器件上恢复损伤的方法。所揭示的方法包括在半导体衬底上形成STI结构; 在栅电极的侧壁上形成栅电极和间隔物; 将离子注入源区和漏区并进行氢退火处理; 并且对所得结构进行热处理以使源/漏区中的离子扩散和对准。

15. 发明申请

US20070188087A1 Organic light emitting display device and method for fabricating the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20070188087A1
公开(公告)日：2007-08-16
申请号：US11638792
申请日：2006-12-14
申请人： Se Yeoul Kwon , Hyun Soo Shin , Jae Kyeong Jeong
发明人： Se Yeoul Kwon , Hyun Soo Shin , Jae Kyeong Jeong
IPC分类号： H05B33/00 , H01J1/62
CPC分类号： H01L51/52 , H01L27/3244 , H01L2251/5338
摘要： An organic light emitting display device which can prevent separation of a buffer layer, thereby reducing an electrical short is disclosed. One embodiment of the organic light emitting display device includes a substrate made of a metal, a metal thin film formed on the substrate, a buffer layer formed on the metal thin film, and an organic light emitting diode formed on the buffer layer. Accordingly, a leakage current caused by an electrical short can be effectively prevented by preventing the separation of the buffer layer.
摘要翻译：公开了一种能够防止缓冲层分离从而减少电短路的有机发光显示装置。有机发光显示装置的一个实施例包括由金属制成的基板，形成在基板上的金属薄膜，形成在金属薄膜上的缓冲层和形成在缓冲层上的有机发光二极管。因此，通过防止缓冲层的分离，可以有效地防止由电气短路引起的漏电流。

16. 发明申请

US20070155109A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20070155109A1
公开(公告)日：2007-07-05
申请号：US11617145
申请日：2006-12-28
申请人： Hyun Soo Shin
发明人： Hyun Soo Shin
IPC分类号： H01L21/336
CPC分类号： H01L21/324 , H01L21/28035 , H01L21/28247 , H01L29/1083
摘要： Embodiments relate to a method for fabricating a semiconductor device. In embodiments, the method may include forming a gate insulating layer and a gate on a semiconductor substrate, performing a rapid thermal process, in which a sidewall oxidation process and a gate conductance annealing process are combined as a single process, with respect to the semiconductor substrate, forming a pocket and a source/drain extension region in the semiconductor substrate, forming a spacer on both sides of the gate, and forming a deep source/drain region in the semiconductor substrate. Because the sidewall oxidation process and the gate conductance annealing process may be combined and performed as a single process, a number of the pre-cleaning processes may be reduced from two to one, and the loading/unloading time of the semiconductor substrate may also be reduced from two to one.
摘要翻译：实施例涉及一种用于制造半导体器件的方法。在实施例中，该方法可以包括在半导体衬底上形成栅极绝缘层和栅极，执行快速热处理，其中侧壁氧化处理和栅极电导退火处理相对于半导体被组合为单个工艺衬底，在半导体衬底中形成凹穴和源极/漏极延伸区域，在栅极的两侧形成间隔物，并在半导体衬底中形成深的源极/漏极区域。由于侧壁氧化处理和栅极电导退火处理可以作为单个工艺组合和执行，因此可以将许多预清洁工艺从两个减少到一个，并且半导体衬底的加载/卸载时间也可以是从两个减少到一个。

17. 发明授权

US5896323A Data output control circuit for semiconductor memory device 失效
标题翻译：半导体存储器件的数据输出控制电路
公开(公告)号：US5896323A
公开(公告)日：1999-04-20
申请号：US900340
申请日：1997-07-25
申请人： Yi Hwan Park , Hyun Soo Shin
发明人： Yi Hwan Park , Hyun Soo Shin
IPC分类号： G11C11/41 , G11C7/10 , G11C11/407 , G11C11/409 , G11C11/413 , G11C16/04
CPC分类号： G11C7/1057 , G11C7/1051 , G11C7/106
摘要： A data output control circuit for a semiconductor memory device sequentially transmits input data via a main amplifier controlled by an address transition detecting signal, a multiplex/latch unit, a data output buffer and an output operator. The data output control circuit prevents false data output, which also improves data processing speed by using a control signal. The data output control circuit includes an output control unit that converts an address transition detecting signal into a kill signal. The kill signal is applied to the data output buffer to cause the output operator to generate a zero level signal based on the address transition detecting signal. The data output control circuit enables the output operator to generate a zero level signal by applying the kill signal to the data output buffer when the transition of an address signal is detected. Accordingly, an interval for a data reversal or a full swing is prevented to enhance data processing speed and reduce current consumption.
摘要翻译：用于半导体存储器件的数据输出控制电路通过由地址转换检测信号控制的主放大器，多路复用/锁存单元，数据输出缓冲器和输出运算器顺序发送输入数据。数据输出控制电路防止伪数据输出，这也通过使用控制信号来提高数据处理速度。数据输出控制电路包括将地址转换检测信号转换为停止信号的输出控制单元。杀死信号被施加到数据输出缓冲器，以使得输出操作者基于地址转换检测信号产生零电平信号。当检测到地址信号的转换时，数据输出控制电路使得输出操作者能够通过将数据输出缓冲器应用到数据输出缓冲器来产生零电平信号。因此，防止数据反转或全摆动的间隔以提高数据处理速度并减少电流消耗。

18. 发明授权

US09362116B2 Methods of forming oxide thin film and electrical devices and thin film transistors using the methods 有权
标题翻译：使用该方法形成氧化物薄膜和电子器件和薄膜晶体管的方法
公开(公告)号：US09362116B2
公开(公告)日：2016-06-07
申请号：US14127690
申请日：2011-11-22
申请人： Hyun Jae Kim , Hyun Soo Shin , You Seung Rim
发明人： Hyun Jae Kim , Hyun Soo Shin , You Seung Rim
IPC分类号： H01L21/00 , H01L23/58 , H01L21/02 , H01L29/24 , H01L29/49 , H01L29/66 , H01L29/786
CPC分类号： H01L21/02565 , H01L21/02422 , H01L21/02554 , H01L21/02628 , H01L29/24 , H01L29/4908 , H01L29/66969 , H01L29/7869
摘要： Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100° C. to about 400° C.
摘要翻译：提供了使用该方法形成氧化物薄膜的方法和电子器件和薄膜晶体管。该方法包括通过施加前体溶液在衬底上形成氧化物薄膜; 并且在加压气氛下使用约100℃至约400℃的气体在基板上进行热处理过程。

19. 发明授权

US07868327B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07868327B2
公开(公告)日：2011-01-11
申请号：US11508530
申请日：2006-08-22
申请人： Jae Kyeong Jeong , Hyun Soo Shin , Se Yeoul Kwon , Yeon Gon Mo
发明人： Jae Kyeong Jeong , Hyun Soo Shin , Se Yeoul Kwon , Yeon Gon Mo
IPC分类号： H01L29/04
CPC分类号： H01L29/78603 , H01L29/66757
摘要： A thin film transistor (TFT) and a method of manufacturing the same, and more particularly, a TFT for reducing leakage current and a method of manufacturing the same are provided. The TFT includes a flexible substrate, a diffusion preventing layer formed on the flexible substrate, a buffer layer formed of at least two insulated materials on the diffusion preventing layer, a semiconductor layer formed on a region of the buffer layer to include a channel layer and a source and drain region, a gate insulating layer formed on the buffer layer including the semiconductor layer, a gate electrode formed on the gate insulating layer in a region corresponding to the channel layer, an interlayer insulating layer formed on the gate insulating layer including the gate electrode, and source and drain electrodes formed in the interlayer insulating layer to include a predetermined contact hole that exposes at least a region of the source and drain region and to be connected to the source and drain region.
摘要翻译：提供一种薄膜晶体管（TFT）及其制造方法，更具体地说，提供了一种用于减小漏电流的TFT及其制造方法。 TFT包括柔性基板，形成在柔性基板上的扩散防止层，由扩散防止层上的至少两个绝缘材料形成的缓冲层，形成在缓冲层的包括沟道层的区域上的半导体层，以及源极和漏极区域，形成在包括半导体层的缓冲层上的栅极绝缘层，形成在与沟道层对应的区域中的栅极绝缘层上的栅极电极，形成在栅极绝缘层上的层间绝缘层，栅极电极和形成在层间绝缘层中的源电极和漏电极，以包括预定的接触孔，其暴露出源极和漏极区域的至少一部分并连接到源极和漏极区域。

20. 发明申请

US20100251936A1 METHOD OF FABRICATING LIQUID FOR OXIDE THIN FILM 有权
标题翻译：氧化物薄膜制备液体的方法
公开(公告)号：US20100251936A1
公开(公告)日：2010-10-07
申请号：US12739657
申请日：2008-02-14
申请人： Hyun Jae Kim , Kyung Ho Kim , Gun Hee Kim , Tae Hoon Jeong , Hyun Soo Shin , Won Jun Park , Yun Jung Choi , Ka Young Lee
发明人： Hyun Jae Kim , Kyung Ho Kim , Gun Hee Kim , Tae Hoon Jeong , Hyun Soo Shin , Won Jun Park , Yun Jung Choi , Ka Young Lee
IPC分类号： C09D1/00
CPC分类号： C23C6/00 , C23C18/08 , C23C18/1216 , C23C18/1254 , C23C30/00 , H01L21/02554 , H01L21/02565 , H01L21/02628
摘要： A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method.
摘要翻译：提供一种制造用于氧化物薄膜的液体的方法，其包括将选自锌化合物，铟化合物，镓化合物，锡化合物和铊化合物的至少两种分散体与对应于所选择的分散体的分散介质以形成分散体系，并在预定温度下将分散体系搅拌并老化预定时间，其中锌化合物与铟化合物，镓化合物，锡化合物和铊化合物为1:0.1至1:2。根据本发明，用于氧化物薄膜的液体可以通过溶胶 - 凝胶法制造，使其能够以简单且低成本的方式与常规真空沉积方法相反地进行批量生产。

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