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    • 4. 发明授权
    • Thin film transistor and the manufacturing method thereof
    • 薄膜晶体管及其制造方法
    • US07655951B2
    • 2010-02-02
    • US11433177
    • 2006-05-12
    • Jae Kyeong JeongJae Bon KooHyun Soo ShinYeon Gon Mo
    • Jae Kyeong JeongJae Bon KooHyun Soo ShinYeon Gon Mo
    • H01L29/786
    • H01L29/78603H01L29/66757H01L29/78675
    • A thin film transistor and a method for manufacturing the same capable of reducing a change in a threshold voltage of the thin film transistor formed on a flexible substrate. The thin film transistor includes: a substrate, the substrate being flexible; a buffer layer having a low dielectric constant from about 1.2 to about 4.0 and formed on the substrate; a semiconductor layer formed on the buffer layer; a gate electrode; first insulation layer formed between the gate electrode and the semiconductor layer; a second insulation layer formed on the semiconductor layer and the gate electrode; and a source/drain electrode electrically connected to the semiconductor layer through a contact hole formed in the second insulation layer. Therefore, the thin film transistor can reduce a change in its threshold voltage, thereby reducing changes in brightness, gray scale, contrast, etc., of light-emitting devices using the thin film transistor.
    • 一种薄膜晶体管及其制造方法,能够减小形成在柔性基板上的薄膜晶体管的阈值电压的变化。 所述薄膜晶体管包括:基板,所述基板是柔性的; 缓冲层,其介电常数为约1.2至约4.0,并形成在基底上; 形成在缓冲层上的半导体层; 栅电极; 形成在所述栅电极和所述半导体层之间的第一绝缘层; 形成在所述半导体层和所述栅电极上的第二绝缘层; 以及源极/漏极,其通过形成在第二绝缘层中的接触孔与半导体层电连接。 因此,薄膜晶体管可以减小其阈值电压的变化,从而减少使用薄膜晶体管的发光器件的亮度,灰度,对比度等的变化。
    • 9. 发明申请
    • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    • 半导体器件的制造方法
    • US20110092032A1
    • 2011-04-21
    • US12766958
    • 2010-04-26
    • Jae Bon KooSeung Youl Kang
    • Jae Bon KooSeung Youl Kang
    • H01L21/336
    • H01L29/78603H01L21/84
    • Provided is a manufacturing methods of a semiconductor device. The methods includes: forming an active layer on a first substrate; bonding a top surface of the active layer with a second substrate and separating the active layer from the first substrate; forming conductive impurity regions corresponding to source and drain regions of the active layer bonded on the second substrate; bonding a third substrate on a bottom surface of the active layer and removing the second substrate; and forming a gate electrode on a top between the conductive impurity regions of the active layer bonded on the third substrate and forming source and drain electrodes on the conductive impurity regions.
    • 提供半导体器件的制造方法。 所述方法包括:在第一基板上形成有源层; 将有源层的顶表面与第二衬底结合并将有源层与第一衬底分离; 形成对应于结合在所述第二基板上的所述有源层的源区和漏区的导电杂质区; 将第三衬底接合在有源层的底表面上并移除第二衬底; 以及在结合在第三基板上的有源层的导电杂质区之间的顶部上形成栅电极,并在导电杂质区上形成源电极和漏电极。