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    • 1. 发明授权
    • Thin film transistor and method of manufacturing the same
    • 薄膜晶体管及其制造方法
    • US07868327B2
    • 2011-01-11
    • US11508530
    • 2006-08-22
    • Jae Kyeong JeongHyun Soo ShinSe Yeoul KwonYeon Gon Mo
    • Jae Kyeong JeongHyun Soo ShinSe Yeoul KwonYeon Gon Mo
    • H01L29/04
    • H01L29/78603H01L29/66757
    • A thin film transistor (TFT) and a method of manufacturing the same, and more particularly, a TFT for reducing leakage current and a method of manufacturing the same are provided. The TFT includes a flexible substrate, a diffusion preventing layer formed on the flexible substrate, a buffer layer formed of at least two insulated materials on the diffusion preventing layer, a semiconductor layer formed on a region of the buffer layer to include a channel layer and a source and drain region, a gate insulating layer formed on the buffer layer including the semiconductor layer, a gate electrode formed on the gate insulating layer in a region corresponding to the channel layer, an interlayer insulating layer formed on the gate insulating layer including the gate electrode, and source and drain electrodes formed in the interlayer insulating layer to include a predetermined contact hole that exposes at least a region of the source and drain region and to be connected to the source and drain region.
    • 提供一种薄膜晶体管(TFT)及其制造方法,更具体地说,提供了一种用于减小漏电流的TFT及其制造方法。 TFT包括柔性基板,形成在柔性基板上的扩散防止层,由扩散防止层上的至少两个绝缘材料形成的缓冲层,形成在缓冲层的包括沟道层的区域上的半导体层,以及 源极和漏极区域,形成在包括半导体层的缓冲层上的栅极绝缘层,形成在与沟道层对应的区域中的栅极绝缘层上的栅极电极,形成在栅极绝缘层上的层间绝缘层, 栅极电极和形成在层间绝缘层中的源电极和漏电极,以包括预定的接触孔,其暴露出源极和漏极区域的至少一部分并连接到源极和漏极区域。