专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20050082548A1 III-V group GaN-based semiconductor device and method of manufacturing the same 审中-公开
标题翻译： III-V族GaN基半导体器件及其制造方法
公开(公告)号：US20050082548A1
公开(公告)日：2005-04-21
申请号：US10951905
申请日：2004-09-29
申请人： Tan Sakong , Ho-sun Paek , Sung-nam Lee , Joong-kon Son , Won-seok Lee
发明人： Tan Sakong , Ho-sun Paek , Sung-nam Lee , Joong-kon Son , Won-seok Lee
IPC分类号： B82Y20/00 , H01S5/02 , H01S5/20 , H01S5/343 , H01L21/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/02 , H01S5/2009 , H01S5/3072 , H01S5/34333 , H01S2301/173 , H01S2301/176 , H01S2304/00
摘要： Provided are a III-V group GaN-based compound semiconductor device and a method of manufacturing the same. The device includes an AlGaN diffusion blocking layer and an InGaN sacrificial layer interposed between an active layer having a multiple quantum well and a p-type GaN-based compound semiconductor layer.
摘要翻译：提供III-V族GaN基化合物半导体器件及其制造方法。该器件包括插入在具有多量子阱的有源层和p型GaN基化合物半导体层之间的AlGaN扩散阻挡层和InGaN牺牲层。

12. 发明授权

US08378381B2 GaN-based semiconductor light emitting device 有权
标题翻译： GaN系半导体发光元件
公开(公告)号：US08378381B2
公开(公告)日：2013-02-19
申请号：US12890361
申请日：2010-09-24
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1-x-yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

13. 发明授权

US08279904B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08279904B2
公开(公告)日：2012-10-02
申请号：US11812439
申请日：2007-06-19
申请人： Tan Sakong , Joong-kon Son , Ho-sun Paek , Sung-nam Lee
发明人： Tan Sakong , Joong-kon Son , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3072
摘要： A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes a quantum well layer formed of Inx1Ga(1−x1)N, where 0
摘要翻译：提供了包括有源层的半导体发光器件。发光器件包括n型半导体层和p型半导体层之间的有源层。有源层包括由Inx1Ga（1-x1）N形成的量子阱层，其中0

14. 发明授权

US07825428B2 GaN-based semiconductor light emitting device 有权
标题翻译： GaN系半导体发光元件
公开(公告)号：US07825428B2
公开(公告)日：2010-11-02
申请号：US12251872
申请日：2008-10-15
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1−x−yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

15. 发明申请

US20070297474A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20070297474A1
公开(公告)日：2007-12-27
申请号：US11812439
申请日：2007-06-19
申请人： Tan Sakong , Joong-kon Son , Ho-sun Paek , Sung-nam Lee
发明人： Tan Sakong , Joong-kon Son , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3072
摘要： A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes a quantum well layer formed of Inx1Ga(1−x1)N, where 0
摘要翻译：提供了包括有源层的半导体发光器件。发光器件包括n型半导体层和p型半导体层之间的有源层。有源层包括由In 1 x 1 Ga（1-x1）N形成的量子阱层，其中0 在量子的相对表面上阱层和形成在量子阱层与至少一个阻挡层之间的扩散防止层。由于有源层中的量子阱层与势垒层之间的扩散防止层，发光效率提高。

16. 发明授权

US08304791B2 Nitride-based semiconductor light emitting device and methods of manufacturing the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US08304791B2
公开(公告)日：2012-11-06
申请号：US11812435
申请日：2007-06-19
申请人： Tan Sakong , Joong-kon Son , Ho-sun Paek , Sung-nam Lee
发明人： Tan Sakong , Joong-kon Son , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L33/32
摘要： A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InxGa(1-x)N (0.01≦x≦0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InyGa(1-y)N (0≦y
摘要翻译：提供具有能够提高光输出性能的结构的氮化物系半导体发光元件及其制造方法。有源层可以包括在n型半导体层上由In x Ga（1-x）N（0.01和n 1; x＆nl; E; 0.05）形成的第一阻挡层，由InyGa（1-y）N（0＆ ; y <0.01），掺杂有包含N（氮）元素和Si（硅）元素中的至少一种的抗缺陷剂，由InzGa（1-z）形成的量子阱层，在第一扩散阻挡层上的N（0.25和nlE; z＆nlE; 0.35），在量子阱层上由InyGa（1-y）N（0＆lt; 1E; y <0.01）形成的第二扩散阻挡层，并掺杂有抗缺陷包括N元素和Si元素中的至少一种的第二阻挡层，以及由第二扩散阻挡层上的In x Ga（1-x）N（0.01＆amp; N e; x＆amp; 氮化物系半导体发光元件可以包括依次层叠在基板上的n型半导体层，有源层和p型半导体层。

17. 发明申请

US20090200565A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：基于GaN的半导体发光器件
公开(公告)号：US20090200565A1
公开(公告)日：2009-08-13
申请号：US12251872
申请日：2008-10-15
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1−x−yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

18. 发明申请

US20080095492A1 Semiconductor optoelectronic device and method of fabricating the same 有权
标题翻译：半导体光电器件及其制造方法
公开(公告)号：US20080095492A1
公开(公告)日：2008-04-24
申请号：US11878495
申请日：2007-07-25
申请人： Joong-kon Son , Han-youl Ryu , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Han-youl Ryu , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： G02B6/12
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/0014 , H01S5/2004 , H01S5/2009 , H01S5/321 , H01S5/3213 , H01S5/3403 , H01S5/3406 , H01S5/34333
摘要： Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.
摘要翻译：提供了一种半导体光电器件，其可以包括分别包括量子阱和在衬底上的势垒层，有源层上和下面的上波导层和下层波导层的有源层，以及位于有源层之上和之下的上和下包层上下波导层。半导体光电器件还可以包括在有源层和上波导层之间的上部光限制层（OCL），并且具有小于上波导层的能隙的能隙，并且等于或大于能隙以及有源层和下波导层之间的下部OCL，并且具有小于下部波导层的能隙的能隙，并且等于或小于势垒层的能隙。还提供了一种制造半导体光电器件的方法。

19. 发明申请

US20080012002A1 Nitride-based semiconductor light emitting device and methods of manufacturing the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US20080012002A1
公开(公告)日：2008-01-17
申请号：US11812435
申请日：2007-06-19
申请人： Tan Sakong , Joong-kon Son , Ho-sun Paek , Sung-nam Lee
发明人： Tan Sakong , Joong-kon Son , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/32
摘要： A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InxGa(1-x)N (0.01≦x≦0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InyGa(1-y)N (0≦y≦0.01) on the first barrier layer, and doped with an anti-defect agent including at least one of an N (nitrogen) element and a Si (silicon) element, a quantum well layer formed of InzGa(1-z)N (0.25≦z≦0.35) on the first diffusion barrier layer, a second diffusion barrier layer formed of InyGa(1-y)N (0≦y≦0.01) on the quantum well layer, and doped with an anti-defect agent including at least one of an N element and a Si element, and a second barrier layer formed of InxGa(1-x)N (0.01≦x≦0.05) on the second diffusion barrier layer. The nitride-based semiconductor light emitting device may include an n-type semiconductor layer, the active layer, and a p-type semiconductor layer that are sequentially stacked on a substrate.
摘要翻译：提供具有能够提高光输出性能的结构的氮化物系半导体发光元件及其制造方法。有源层可以包括在n型半导体层上由In x Ga（1-x）N（0.01 <= x <= 0.05）形成的第一势垒层，在第一阻挡层上由In（x）y（1-y）N（0 <= y <0.01））形成的第一扩散阻挡层，并掺杂有包括N（氮）元素和Si（硅）元素中的至少一种元素的抗缺陷剂，由In（z）（1-z）形成的量子阱层在第一扩散阻挡层上的N（0.25 <= z <= 0.35），由In Y y（1-y）N（0）表示的第二扩散阻挡层并且掺杂有包含N元素和Si元素中的至少一种的抗缺陷剂，以及由In元素和Si元素形成的第二势垒层，在第二扩散阻挡层上的Ga（1-x）N（0.01 <= x <= 0.05）。氮化物系半导体发光元件可以包括依次层叠在基板上的n型半导体层，有源层和p型半导体层。

20. 发明申请

US20060237709A1 GaN-based compound semiconductor device 审中-公开
标题翻译： GaN系化合物半导体装置
公开(公告)号：US20060237709A1
公开(公告)日：2006-10-26
申请号：US11285169
申请日：2005-11-23
申请人： Sung-nam Lee , Ho-sun Paek , Joong-kon Son , Tan Sakong
发明人： Sung-nam Lee , Ho-sun Paek , Joong-kon Son , Tan Sakong
IPC分类号： H01L29/06 , H01L29/12
CPC分类号： H01L29/2003 , B82Y20/00 , H01L29/045 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0211 , H01S5/2231 , H01S5/34333
摘要： A gallium nitride (GaN)-based compound semiconductor device having a structure improving a surface characteristic of a thin film growing on a substrate is provided. The GaN-based compound semiconductor device includes an AlxInyGa1-x-yN substrate (0≦x≦1, 0≦y≦1, and 0≦x+y≦1) whose surface inclines toward a predetermined direction at an off-angle of greater than 0° and less than 1° with respect to the (0001) plane, and a GaN-based compound semiconductor layer grown on the surface of the substrate.
摘要翻译：提供了具有提高在基板上生长的薄膜的表面特性的结构的基于氮化镓（GaN）的化合物半导体器件。 GaN基化合物半导体器件包括Al衬底（0≤x≤1,0）相对于（0001）面，其表面朝向预定方向倾斜大于0°且小于1°的角度<= y <= 1和0 <= x + y <= 1），以及在基板的表面上生长的GaN基化合物半导体层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式