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11. 发明授权

US07633571B2 Thin-film transistor with semiconductor layer and off-leak current characteristics 失效
标题翻译：具有半导体层和漏电流特性的薄膜晶体管
公开(公告)号：US07633571B2
公开(公告)日：2009-12-15
申请号：US11029405
申请日：2005-01-06
申请人： Takahiro Korenari , Hiroshi Tanabe , Nobuya Seko
发明人： Takahiro Korenari , Hiroshi Tanabe , Nobuya Seko
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , H01L27/12 , H01L29/78609 , H01L29/78621 , H01L29/78645
摘要： Recognizing the phenomenon that the film thickness of a semiconductor layer causes shift in the OFF-leak current characteristic that corresponds to back-gate voltage of a thin-film transistor, the average film thickness of a semiconductor layer is prescribed such that the shift of the OFF-leak current characteristic is reduced. Alternatively, the film thickness distribution (the ratio of the occurrence of each region having different film thickness) in the direction of the channel width of the semiconductor layer is prescribed.
摘要翻译：认识到半导体层的膜厚导致与薄膜晶体管的背栅极电压相对应的OFF漏电流特性偏移的现象，规定半导体层的平均膜厚，使得泄漏电流特性降低。或者，规定半导体层的沟道宽度方向的膜厚分布（膜厚不同的区域的出现比例）。

12. 发明授权

US07632577B2 Organic light-emitting device 失效
标题翻译：有机发光装置
公开(公告)号：US07632577B2
公开(公告)日：2009-12-15
申请号：US10525198
申请日：2003-08-26
申请人： Akihito Saitoh , Mizuho Hiraoka , Koichi Suzuki , Akihiro Senoo , Hiroshi Tanabe , Naoki Yamada , Chika Negishi
发明人： Akihito Saitoh , Mizuho Hiraoka , Koichi Suzuki , Akihiro Senoo , Hiroshi Tanabe , Naoki Yamada , Chika Negishi
IPC分类号： H01L51/54 , H05B33/14
CPC分类号： H01L51/0058 , C09K11/06 , C09K2211/1003 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0039 , H01L51/005 , H01L51/0054 , H01L51/0055 , H01L51/0059 , H01L51/006 , H01L51/0067 , H01L51/0068 , H01L51/0072 , H01L51/0077 , H01L51/0078 , H01L51/0081 , H01L51/0094 , H01L51/5012 , H01L2251/308 , Y10S428/917
摘要： To provide an organic light-emitting device that exhibits the hue of light emission having extremely high purity and has a light output having high luminance and long life with a high degree of efficiency. The organic light-emitting device comprises at least a pair of electrodes consisting of an anode and a cathode and one or more organic compound-containing layers sandwiched between the pair of electrodes, wherein at least one of the above described organic compound-containing layers contains at least one compound selected from the group consisting of the compounds represented by the following general formula [1] and at least one compound selected from the group consisting of the compounds represented by the following general formula [2].
摘要翻译：本发明提供一种具有高纯度的发光色调的有机发光装置，具有高亮度，长寿命的光输出，效率高。有机发光器件包括由阳极和阴极组成的至少一对电极和夹在该对电极之间的一个或多个含有机化合物的层，其中至少一个上述含有机化合物的层含有选自由以下通式[1]表示的化合物中的至少一种化合物和选自下列通式[2]表示的化合物中的至少一种化合物。

13. 发明授权

US07585708B2 Method for manufacturing a thin-film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07585708B2
公开(公告)日：2009-09-08
申请号：US11512596
申请日：2006-08-30
申请人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： H01L21/00
CPC分类号： H01L27/1296 , B23K26/04 , B23K26/066 , H01L21/02675 , H01L21/2026 , H01L23/544 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78633 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
摘要翻译：薄膜晶体管形成在透明基板上，具有栅极电极膜层和源极和漏极区域，并且还具有由与栅极中至少一个的构成材料相同的构成材料制成的对准标记电极膜层和源极和漏极区，并且形成在与栅极电极膜层或源极和漏极区域相同的位置处。

14. 发明授权

US07576910B2 Microscope and sample observation method 有权
标题翻译：显微镜和样品观察法
公开(公告)号：US07576910B2
公开(公告)日：2009-08-18
申请号：US11979592
申请日：2007-11-06
申请人： Hirotoshi Terada , Ikuo Arata , Masaharu Tokiwa , Hiroshi Tanabe , Shigeru Sakamoto , Yoshio Isobe
发明人： Hirotoshi Terada , Ikuo Arata , Masaharu Tokiwa , Hiroshi Tanabe , Shigeru Sakamoto , Yoshio Isobe
IPC分类号： G02B21/00
CPC分类号： G02B21/33 , G01N21/9501 , G01N21/956 , G01N21/95684 , G02B21/0016 , G02B21/362
摘要： For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.
摘要翻译：对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。然后在两个控制模式下进行观察，该两种控制模式由SIL 3位于待机位置的第一模式进行，并且基于第一模式的基板的折射率n0和厚度t0进行聚焦和像差校正半导体器件S和第二模式，其中SIL 3位于插入位置，并且基于衬底的折射率n0和厚度t0执行聚焦和像差校正，并且折射率n1，厚度 d1和SIL3的曲率半径R1。这提供了能够容易地观察对半导体器件的微结构等的分析所需的样品的显微镜和样品观察方法。

15. 发明申请

US20090202721A1 Method for Thin Film Formation 审中-公开
标题翻译：薄膜形成方法
公开(公告)号：US20090202721A1
公开(公告)日：2009-08-13
申请号：US11886317
申请日：2006-03-14
申请人： Hiroshi Nogami , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Hiroshi Nogami , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： C23C16/00 , C23C16/54
CPC分类号： C23C16/401 , C23C16/402 , C23C16/452 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： A method for thin film formation that can form, at a low temperature, a good thin film having a good interfacial property between a silicon substrate and a silicon oxide film and having a low interfacial trap density is provided.The method for thin film formation comprises generating plasma within a vacuum vessel to generate an active species (radical) and forming a silicon oxide film on a silicon substrate using this active species and a material gas, wherein, in addition to the material gas, a nitrogen atom-containing gas is introduced into the vacuum vessel in its film forming space where the active species (radical) and the material gas come into contact with each other for the first time and are reacted with each other to form a silicon film on the silicon substrate, and wherein the flow rate of the nitrogen atom-containing gas during the formation of the silicon oxide film on the silicon substrate is regulated so as to be the maximum value at least at the time of the start of formation of the silicon film on the silicon substrate.
摘要翻译：提供了一种薄膜形成方法，其可以在低温下形成在硅衬底和氧化硅膜之间具有良好界面性能并具有低界面陷阱密度的良好薄膜。用于薄膜形成的方法包括在真空容器内产生等离子体以产生活性物质（自由基），并使用该活性物质和材料气体在硅衬底上形成氧化硅膜，其中，除了材料气体之外，含氮原子气体在其成膜空间中被引入真空容器中，其中活性物质（自由基）和原料气体首次相互接触并且彼此反应以形成硅膜硅衬底，并且其中在硅衬底上形成氧化硅膜期间含氮原子气体的流速被调节为至少在开始形成硅膜时为最大值在硅衬底上。

16. 发明申请

US20090079921A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20090079921A1
公开(公告)日：2009-03-26
申请号：US12237332
申请日：2008-09-24
申请人： Kenichi Mori , Michiaki Sakamoto , Ken Sumiyoshi , Hiroshi Nagai , Kenichirou Naka , Masayuki Jumonji , Hiroshi Tanabe
发明人： Kenichi Mori , Michiaki Sakamoto , Ken Sumiyoshi , Hiroshi Nagai , Kenichirou Naka , Masayuki Jumonji , Hiroshi Tanabe
IPC分类号： G02F1/1343 , G02F1/1333
CPC分类号： G02F1/133555
摘要： To suppress light leakage at the time of dark state, and to provide a liquid crystal display device whose electrodes in the reflection areas can be formed with high precision. The liquid crystal display device has a reflection area within a pixel unit by corresponding at least to a reflection plate forming part, and the reflection area is driven with a lateral electric field mode and normally-white. A driving electrode for forming an electric field to a liquid crystal layer of the reflection area is formed on the reflection plate via an insulating film by using a non-transparent electric conductor.
摘要翻译：为了抑制黑暗时的漏光，并且提供能够以高精度形成反射区域中的电极的液晶显示装置。液晶显示装置通过至少对应于反射板形成部分而在像素单元内具有反射区域，并且反射区域以横向电场模式和常白色驱动。通过使用非透明导电体，通过绝缘膜在反射板上形成用于向反射区域的液晶层形成电场的驱动电极。

17. 发明授权

US07468765B2 Electro-optical display device and image projection unit 有权
标题翻译：电光显示装置和图像投影单元
公开(公告)号：US07468765B2
公开(公告)日：2008-12-23
申请号：US11001240
申请日：2004-12-02
申请人： Kunihiro Shiota , Hiroshi Tanabe
发明人： Kunihiro Shiota , Hiroshi Tanabe
IPC分类号： G02F1/1333
CPC分类号： G02F1/136209 , G02F1/133345 , G02F2201/40
摘要： An LCD device includes a plurality of pixels each having a slope area configured by a plurality of layers. A shielded element shielded by a black matrix has an inner edge located at a distance X apart from the outer edge of the slope area, the distance X being expressed by the formula: x=(T1/cos β)×sin(α−β), wherein α and β are incidence angle and refracted angle, respectively, of the incident light at an interface between the layers having different refractive indexes in the slope area, and T1 is a thickness of the underlying layer forming the interface.
摘要翻译： LCD装置包括多个像素，每个像素具有由多个层构成的斜面区域。由黑矩阵屏蔽的屏蔽元件具有位于与斜面区域的外边缘相距X距离的内边缘，距离X由下式表示：x =（T1 /cosβ）xsin（α-β）其中α和β分别是在倾斜区域中具有不同折射率的层之间的界面处的入射光的入射角和折射角，T1是形成界面的下层的厚度。

18. 发明申请

US20080074739A1 Microscope and sample observation method 有权
标题翻译：显微镜和样品观察法
公开(公告)号：US20080074739A1
公开(公告)日：2008-03-27
申请号：US11979592
申请日：2007-11-06
申请人： Hirotoshi Terada , Ikuo Arata , Masaharu Tokiwa , Hiroshi Tanabe , Shigeru Sakamoto , Yoshio Isobe
发明人： Hirotoshi Terada , Ikuo Arata , Masaharu Tokiwa , Hiroshi Tanabe , Shigeru Sakamoto , Yoshio Isobe
IPC分类号： G02B21/00
CPC分类号： G02B21/33 , G01N21/9501 , G01N21/956 , G01N21/95684 , G02B21/0016 , G02B21/362
摘要： For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.
摘要翻译：对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。然后在两个控制模式下进行观察，该两种控制模式由SIL 3位于待机位置的第一模式组成，并且基于折射率n <0>进行聚焦和像差校正，半导体器件S的衬底的厚度t 0 <0 _{和其中SIL 3位于插入位置并且基于折射率执行聚焦和像差校正的第二模式 n 和底层的厚度t 0 <0，折射率n <1，厚度d 1，以及SIL 3的曲率半径R 1 1。这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。}

19. 发明授权

US07312921B2 Microscope and sample observation method 有权
标题翻译：显微镜和样品观察法
公开(公告)号：US07312921B2
公开(公告)日：2007-12-25
申请号：US11333550
申请日：2006-01-18
申请人： Hirotoshi Terada , Ikuo Arata , Masaharu Tokiwa , Hiroshi Tanabe , Shigeru Sakamoto , Yoshio Isobe
发明人： Hirotoshi Terada , Ikuo Arata , Masaharu Tokiwa , Hiroshi Tanabe , Shigeru Sakamoto , Yoshio Isobe
IPC分类号： G02B21/00
CPC分类号： G02B21/33 , G01N21/9501 , G01N21/956 , G01N21/95684 , G02B21/0016 , G02B21/362
摘要： For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.
摘要翻译：对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。然后在两个控制模式下进行观察，该两种控制模式由SIL 3位于待机位置的第一模式组成，并且基于折射率n <0>进行聚焦和像差校正，半导体器件S的衬底的厚度t 0 <0 _{和其中SIL 3位于插入位置并且基于折射率执行聚焦和像差校正的第二模式 n 和底层的厚度t 0 <0，折射率n <1，厚度d 1，以及SIL 3的曲率半径R 1 1。这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。}

20. 发明授权

US07312418B2 Semiconductor thin film forming system 有权
标题翻译：半导体薄膜成型系统
公开(公告)号：US07312418B2
公开(公告)日：2007-12-25
申请号：US11021306
申请日：2004-12-23
申请人： Hiroshi Tanabe , Tomoyuki Akashi , Yoshimi Watabe
发明人： Hiroshi Tanabe , Tomoyuki Akashi , Yoshimi Watabe
IPC分类号： H01L21/268
CPC分类号： H01L21/02675 , B23K26/04 , B23K26/043 , B23K26/046 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/066 , B23K26/067 , B23K26/0732 , H01L21/2026 , H01L21/268 , H01L21/67225 , H01L27/1285
摘要： In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20′) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm−2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
摘要翻译：在半导体薄膜形成系统中，通过将半导体薄膜暴露于通过形成在光掩模上的图案图案化的投影光，来修饰半导体薄膜的预定区域，该系统包括用于使半导体薄膜均匀化的机构（opt 20'）用于在光掩模上的预定区域中曝光的光。该系统可以提供具有小于1012cm -2的陷阱状态密度的结晶硅膜，并且可以提供表现出低界面态密度的硅绝缘膜界面。

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