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1. 发明申请

US20090202721A1 Method for Thin Film Formation 审中-公开
标题翻译：薄膜形成方法
公开(公告)号：US20090202721A1
公开(公告)日：2009-08-13
申请号：US11886317
申请日：2006-03-14
申请人： Hiroshi Nogami , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Hiroshi Nogami , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： C23C16/00 , C23C16/54
CPC分类号： C23C16/401 , C23C16/402 , C23C16/452 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： A method for thin film formation that can form, at a low temperature, a good thin film having a good interfacial property between a silicon substrate and a silicon oxide film and having a low interfacial trap density is provided.The method for thin film formation comprises generating plasma within a vacuum vessel to generate an active species (radical) and forming a silicon oxide film on a silicon substrate using this active species and a material gas, wherein, in addition to the material gas, a nitrogen atom-containing gas is introduced into the vacuum vessel in its film forming space where the active species (radical) and the material gas come into contact with each other for the first time and are reacted with each other to form a silicon film on the silicon substrate, and wherein the flow rate of the nitrogen atom-containing gas during the formation of the silicon oxide film on the silicon substrate is regulated so as to be the maximum value at least at the time of the start of formation of the silicon film on the silicon substrate.
摘要翻译：提供了一种薄膜形成方法，其可以在低温下形成在硅衬底和氧化硅膜之间具有良好界面性能并具有低界面陷阱密度的良好薄膜。用于薄膜形成的方法包括在真空容器内产生等离子体以产生活性物质（自由基），并使用该活性物质和材料气体在硅衬底上形成氧化硅膜，其中，除了材料气体之外，含氮原子气体在其成膜空间中被引入真空容器中，其中活性物质（自由基）和原料气体首次相互接触并且彼此反应以形成硅膜硅衬底，并且其中在硅衬底上形成氧化硅膜期间含氮原子气体的流速被调节为至少在开始形成硅膜时为最大值在硅衬底上。

2. 发明授权

US07585708B2 Method for manufacturing a thin-film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07585708B2
公开(公告)日：2009-09-08
申请号：US11512596
申请日：2006-08-30
申请人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： H01L21/00
CPC分类号： H01L27/1296 , B23K26/04 , B23K26/066 , H01L21/02675 , H01L21/2026 , H01L23/544 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78633 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
摘要翻译：薄膜晶体管形成在透明基板上，具有栅极电极膜层和源极和漏极区域，并且还具有由与栅极中至少一个的构成材料相同的构成材料制成的对准标记电极膜层和源极和漏极区，并且形成在与栅极电极膜层或源极和漏极区域相同的位置处。

3. 发明申请

US20070045624A1 Method for manufacturing a thin-film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US20070045624A1
公开(公告)日：2007-03-01
申请号：US11512596
申请日：2006-08-30
申请人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： H01L29/04
CPC分类号： H01L27/1296 , B23K26/04 , B23K26/066 , H01L21/02675 , H01L21/2026 , H01L23/544 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78633 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
摘要翻译：薄膜晶体管形成在透明基板上，具有栅极电极膜层和源极和漏极区域，并且还具有由与栅极中至少一个的构成材料相同的构成材料制成的对准标记电极膜层和源极和漏极区，并且形成在与栅极电极膜层或源极和漏极区域相同的位置处。

4. 发明授权

US06830786B2 Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film 有权
标题翻译：氧化硅膜，形成氧化硅膜的方法和用于沉积氧化硅膜的装置
公开(公告)号：US06830786B2
公开(公告)日：2004-12-14
申请号：US10197422
申请日：2002-07-18
申请人： Katsuhisa Yuda , Hiroshi Tanabe
发明人： Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： C23C1640
CPC分类号： C23C16/5096 , C23C16/402
摘要： A silicon oxide film has a ratio of A1 to A2 which is not higher than 0.21, where A1 is a first peak integrated intensity of a first peak belonging to Si—OH and appearing in the vicinity of a wave-number of 970 cm−1, and A2 is a second peak integrated intensity of a second peak belonging to O—Si—O and appearing in the vicinity of a wave-number 820 cm−1, and each of the first and second peak integrated intensities is defined as a product of peak width at half height and a peak height of a Raman spectrum obtained by a Raman scattering spectroscopic analysis of the silicon oxide film. The silicon oxide film is deposited under a condition that a ratio of a first flow rate Fo of oxygen gas to a second flow rate Fsi of a silicon source gas is not lower than 20.
摘要翻译：氧化硅膜的A1与A2的比率不高于0.21，其中A1是属于Si-OH的第一峰的第一峰积分强度，并且出现在970cm -1的波数附近， 1>，A2是属于O-Si-O并出现在波数820cm -1附近的第二峰的第二峰积分强度，并且第一和第二峰积分强度分别为定义为通过氧化硅膜的拉曼散射光谱分析获得的半高峰宽度和拉曼光谱的峰高的乘积。在氧气的第一流量Fo与硅源气体的第二流量Fsi的比率不低于20的条件下沉积氧化硅膜。

5. 发明授权

US06703267B2 Method of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US06703267B2
公开(公告)日：2004-03-09
申请号：US10231045
申请日：2002-08-30
申请人： Hiroshi Tanabe , Katsuhisa Yuda , Hiroshi Okumura , Yoshinobu Sato
发明人： Hiroshi Tanabe , Katsuhisa Yuda , Hiroshi Okumura , Yoshinobu Sato
IPC分类号： H01L2100
CPC分类号： H01L29/42384 , H01L27/14665 , H01L29/66757 , H01L29/78609
摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.
摘要翻译：在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。这可以大大减少闸门泄漏的发生。由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小质量数量被包含在与栅电极的第二界面中和附近。

6. 发明授权

US06822263B2 Thin film transistor formed on a transparent substrate 有权
标题翻译：薄膜晶体管形成在透明基板上
公开(公告)号：US06822263B2
公开(公告)日：2004-11-23
申请号：US10457928
申请日：2003-06-09
申请人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： H01L2904
CPC分类号： H01L27/1296 , B23K26/04 , B23K26/066 , H01L21/02675 , H01L21/2026 , H01L23/544 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78633 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
摘要翻译：薄膜晶体管形成在透明基板上，具有栅极电极膜层和源极和漏极区域，并且还具有由与栅极中至少一个的构成材料相同的构成材料制成的对准标记电极膜层和源极和漏极区，并且形成在与栅极电极膜层或源极和漏极区域相同的位置处。

7. 发明申请

US20080305275A1 CVD system and substrate cleaning method 审中-公开
公开(公告)号：US20080305275A1
公开(公告)日：2008-12-11
申请号：US12216598
申请日：2008-07-08
申请人： Kazuo Ichikawa , Hiroshi Tanabe , Katsuhisa Yuda
发明人： Kazuo Ichikawa , Hiroshi Tanabe , Katsuhisa Yuda
IPC分类号： C23C16/453
CPC分类号： C23C16/0245 , H01L29/4908
摘要： An insulating film deposition chamber 40 has a plasma generator 14 having a plasma generation chamber 21 separated from the film deposition chamber 13 in which the substrate is arranged. A material gas is directly supplied to the film deposition chamber, and radicals are introduced into the film deposition chamber from the plasma generator, and a thin film is deposited on the substrate. Further, a cleaning gas feeder is added to the plasma generator. A cleaning gas is introduced through the cleaning gas feeder to produce plasma at the plasma generator to generate radicals, and the radicals are introduced into the film deposition chamber and irradiate the substrate to clean it.

8. 发明申请

US20050012098A1 Thin film transistor formed on a transparent substrate 有权
标题翻译：薄膜晶体管形成在透明基板上
公开(公告)号：US20050012098A1
公开(公告)日：2005-01-20
申请号：US10911833
申请日：2004-08-05
申请人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： G02F1/136 , B23K26/04 , B23K26/06 , G02F1/1368 , H01L21/027 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L23/544 , H01L27/12 , H01L27/146 , H01L29/786 , H01L31/036
CPC分类号： H01L27/1296 , B23K26/04 , B23K26/066 , H01L21/02675 , H01L21/2026 , H01L23/544 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78633 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
摘要翻译：薄膜晶体管形成在透明基板上，具有栅极电极膜层和源极和漏极区域，并且还具有由与栅极中至少一个的构成材料相同的构成材料制成的对准标记电极膜层和源极和漏极区，并且形成在与栅极电极膜层或源极和漏极区域相同的位置处。

9. 发明授权

US06444508B1 Method of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US06444508B1
公开(公告)日：2002-09-03
申请号：US09900007
申请日：2001-07-09
申请人： Hiroshi Tanabe , Katsuhisa Yuda , Hiroshi Okumura , Yoshinobu Sato
发明人： Hiroshi Tanabe , Katsuhisa Yuda , Hiroshi Okumura , Yoshinobu Sato
IPC分类号： H01L2184
CPC分类号： H01L29/42384 , H01L27/14665 , H01L29/66757 , H01L29/78609
摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.
摘要翻译：在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。这可以大大减少闸门泄漏的发生。由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小质量数量被包含在与栅电极的第二界面中和附近。

10. 发明授权

US06383299B1 Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film 失效
标题翻译：氧化硅膜，形成氧化硅膜的方法和用于沉积氧化硅膜的装置
公开(公告)号：US06383299B1
公开(公告)日：2002-05-07
申请号：US09082583
申请日：1998-05-21
申请人： Katsuhisa Yuda , Hiroshi Tanabe
发明人： Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： B32B3100
CPC分类号： C23C16/5096 , C23C16/402
摘要： A silicon oxide film has a ratio of A1 to A2 which is not higher than 0.21, where A1 is a first peak integrated intensity of a first peak belonging to Si—OH and appearing in the vicinity of a wave-number of 970 cm−1, and A2 is a second peak integrated intensity of a second peak belonging to O—Si—O and appearing in the vicinity of a wave-number 820 cm−1, and each of the first and second peak integrated intensities is defined as a product of peal width at half height and a peak height of a Raman spectrum obtained by a Raman scattering spectroscopic analysis of the silicon oxide film. The silicon oxide film is deposited under a condition that a ratio of a first flow rate Fo of oxygen gas to a second flow rate Fsi of a silicon source gas is not lower than 20.
摘要翻译：氧化硅膜的Al与A2的比率不高于0.21，其中A1是属于Si-OH的第一峰的第一峰积分强度，并且出现在970cm -1的波数附近 A2是属于O-Si-O的第二峰的第二峰积分强度，出现在波数820cm -1附近，第一和第二峰积分强度中的每一个被定义为产物通过氧化硅膜的拉曼散射光谱分析获得的半高度的峰宽度和拉曼光谱的峰高。在氧气的第一流量Fo与硅源气体的第二流量Fsi的比率不低于20的条件下沉积氧化硅膜。

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