专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07144766B2 Method of manufacturing semiconductor integrated circuit device having polymetal gate electrode 有权
标题翻译：具有多金属栅电极的半导体集成电路器件的制造方法
公开(公告)号：US07144766B2
公开(公告)日：2006-12-05
申请号：US11198858
申请日：2005-08-08
申请人： Naoki Yamamoto , Hiroyuki Uchiyama , Norio Suzuki , Eisuke Nishitani , Shin'ichiro Kimura , Kazuyuki Hozawa
发明人： Naoki Yamamoto , Hiroyuki Uchiyama , Norio Suzuki , Eisuke Nishitani , Shin'ichiro Kimura , Kazuyuki Hozawa
IPC分类号： H01L22/336 , H01L22/8234
CPC分类号： H01L21/28194 , H01L21/02057 , H01L21/02068 , H01L21/02071 , H01L21/0217 , H01L21/02211 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/28061 , H01L21/28176 , H01L21/28247 , H01L21/31662 , H01L21/67115 , H01L21/76838 , H01L21/823437 , H01L21/84 , H01L27/10814 , H01L27/10873 , H01L27/10894 , H01L27/1214 , H01L29/4941 , H01L29/518
摘要： When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.
摘要翻译：当在多晶硅膜上堆叠WN薄膜和W膜的多金属结构的栅极电极7A之后进行用于再生栅极绝缘膜6的氧化处理时，晶片1 在用于还原每个栅电极7A的侧壁上的W氧化物27的条件下被加热和冷却。结果，沉积在晶片1的表面上的W氧化物27的量减少。

12. 发明授权

US06875280B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US06875280B2
公开(公告)日：2005-04-05
申请号：US09780951
申请日：2001-02-09
申请人： Kazuhito Ikeda , Eisuke Nishitani , Harunobu Sakuma , Kazuhiro Nakagomi
发明人： Kazuhito Ikeda , Eisuke Nishitani , Harunobu Sakuma , Kazuhiro Nakagomi
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , H01L21/31 , H01L21/677 , H01L21/687 , C23C16/00 , H01L21/00
CPC分类号： H01L21/67748 , C23C16/45521 , C23C16/4585 , C23C16/54 , H01L21/67751 , H01L21/68735
摘要： A substrate processing apparatus includes a chamber, a gas introducing portion, a gas discharge port, a substrate transfer gate, and a substrate moving member which moves the substrate between a substrate processing position where the substrate is processed in the chamber and a substrate transferring in-out position in the chamber where the substrate transferred into the chamber from the substrate transfer gate is located and where the substrate is located when the substrate is transferred out from the chamber through the substrate transfer gate. The gas introducing portion, the substrate processing position, the gas discharge port and the substrate transfer gate are disposed in this order. A gas restraining member which restrains processing gas for processing the substrate from flowing toward the substrate transfer gate is provided between the gas discharge port and the substrate transfer gate.
摘要翻译：一种基板处理装置，包括：室，气体导入部，气体排出口，基板输送栅极和基板移动部件，其使基板在基板处理位置和基板之间移动; 在基板从衬底传送门转移到室中的衬底的位置以及当衬底通过衬底传送门从腔室传出时位于衬底的位置。气体导入部，基板处理位置，气体排出口和基板输送口以该顺序设置。在气体排出口和基板输送口之间设置限制用于处理基板的处理气体朝向基板输送口流动的气体抑制构件。

13. 发明授权

US06472639B2 Heat treatment method and heat treatment apparatus 失效
标题翻译：热处理方法和热处理装置
公开(公告)号：US06472639B2
公开(公告)日：2002-10-29
申请号：US10108432
申请日：2002-03-29
申请人： Eisuke Nishitani , Katsuhisa Kasanami , Naoko Matsuyama , Shinya Sasaki
发明人： Eisuke Nishitani , Katsuhisa Kasanami , Naoko Matsuyama , Shinya Sasaki
IPC分类号： F27B514
CPC分类号： H01L21/67115 , C30B25/105 , C30B31/12 , H01L21/67109
摘要： Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps 10 are provided outside the furnace body 3 of a hot-wall CVD apparatus. The hot-wall reactor furnace body 3 is preheated to a prescribed temperature. Wafers W are loaded into the furnace body 3, and these wafers W are rapidly heated mediately thereafter to the desired temperature by light emitted by the lamps 10. The lamps 10 are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body 3. It is also possible to adopt an arrangement in which preheating commensurate with the cooling occurring during the transport period is performed before the wafers W are loaded into the furnace body 3. the wafers W are then loaded into the reactor furnace body 3. and the water temperature is allowed to achieve a uniform state.
摘要翻译：在晶片内形成均匀的温度，并且通过将灯加热与热壁加热组合来显着降低晶片加热时间，从而实现更高的通量。灯10设置在热壁CVD装置的炉体3的外部。将热壁反应炉体3预热至规定温度。将晶片W装载到炉体3中，并且这些晶片W随后由灯10发出的光中等地迅速地加热到期望的温度。灯10在加热之后被切断，并且允许晶片温度达到均匀由于在热壁反应炉体3中的晶片中的热扩散的结果，也可以采用这样的配置：在将晶片W装载到炉体3.然后将晶片W装载到反应器炉体3中，并允许水温达到均匀的状态。

14. 发明授权

US06171641B2 Vacuum processing apparatus, and a film deposition apparatus and a film deposition method both using the vacuum processing apparatus 失效
标题翻译：真空处理装置，以及使用真空处理装置的成膜装置和成膜方法
公开(公告)号：US06171641B2
公开(公告)日：2001-01-09
申请号：US08260321
申请日：1994-06-15
申请人： Akira Okamoto , Shigeru Kobayashi , Hideaki Shimamura , Susumu Tsuzuku , Eisuke Nishitani , Satosi Kisimoto , Yuji Yoneoka
发明人： Akira Okamoto , Shigeru Kobayashi , Hideaki Shimamura , Susumu Tsuzuku , Eisuke Nishitani , Satosi Kisimoto , Yuji Yoneoka
IPC分类号： C23C1646
CPC分类号： C23C16/463 , H01L21/67109 , H01L21/67248
摘要： A vacuum processing apparatus for performing various processes on a wafer in a vacuum chamber, and a film deposition method and a film deposition apparatus using this vacuum processing apparatus. The vacuum processing apparatus, the film deposition method and the film deposition apparatus using the vacuum processing apparatus according to this invention are characterized in that temperature control of the wafer is performed in a film deposition process, and particularly characterized in that after the emissivity calibration using a combination of a temperature calibration stage and a shutter is performed, the substrate is transferred to stages in a vacuum film deposition process chamber, and a film is deposited on the substrate by controlling the substrate temperature to a specified temperature.
摘要翻译：一种用于在真空室中的晶片上进行各种处理的真空处理设备，以及使用该真空处理设备的成膜方法和成膜设备。使用本发明的真空处理装置的真空处理装置，成膜方法和成膜装置的特征在于，在薄膜沉积工艺中进行晶片的温度控制，其特征在于，在使用执行温度校准阶段和快门的组合，将衬底转移到真空膜沉积处理室中的阶段，并且通过将衬底温度控制到指定温度将膜沉积在衬底上。

15. 发明授权

US5707500A Vacuum processing equipment, film coating equipment and deposition method 失效
标题翻译：真空加工设备，薄膜涂装设备及沉积方法
公开(公告)号：US5707500A
公开(公告)日：1998-01-13
申请号：US467964
申请日：1995-06-06
申请人： Hideaki Shimamura , Yuji Yoneoka , Shigeru Kobayashi , Satosi Kisimoto , Sunao Matsubara , Hiroyuki Shida , Yukio Tanigaki , Masashi Yamamoto , Susumu Tsuzuku , Eisuke Nishitani , Tokio Kato , Akira Okamoto
发明人： Hideaki Shimamura , Yuji Yoneoka , Shigeru Kobayashi , Satosi Kisimoto , Sunao Matsubara , Hiroyuki Shida , Yukio Tanigaki , Masashi Yamamoto , Susumu Tsuzuku , Eisuke Nishitani , Tokio Kato , Akira Okamoto
IPC分类号： C23C14/54 , H01L21/00 , C23C16/00 , C23F1/02
CPC分类号： H01L21/67109 , C23C14/541 , H01L21/67098
摘要： The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.
摘要翻译：本发明涉及在真空中加工晶片的真空处理设备，以及在晶片上形成薄膜的薄膜涂布或成形设备及方法，其中通过使用红外辐射温度计进行晶片的辐射测量和温度控制。基于辐射测量，进行处理期间晶片的加热和/或冷却。

16. 发明授权

US5574247A CVD reactor apparatus 失效
标题翻译： CVD反应器装置
公开(公告)号：US5574247A
公开(公告)日：1996-11-12
申请号：US263323
申请日：1994-06-21
申请人： Eisuke Nishitani , Susmu Tsuzuku , Natsuyo Chiba , Shigeru Kobayashi , Naoyuki Tamura , Norihiro Uchida
发明人： Eisuke Nishitani , Susmu Tsuzuku , Natsuyo Chiba , Shigeru Kobayashi , Naoyuki Tamura , Norihiro Uchida
IPC分类号： H01L21/285 , C23C16/02 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C23C16/54 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/0245 , C23C16/4585 , C23C16/481 , C23C16/54
摘要： A CVD reactor apparatus includes a substrate clamp for clamping a peripheral edge of the front of a substrate disposed in a CVD reactor and, dividing a space in the reactor into a first space adjacent the front of the substrate and a second space adjacent the backside of the substrate. The apparatus also includes a unit for cooling the surface temperature of an inner wall of the reactor to a temperature equal to or less than a deposition lower limit, and a unit for supplying a CVD gas to the first space adjacent the substrate front and supplying an inert gas to the second space adjacent the substrate backside at different pressures and causing a reaction at only the substrate front, a reaction gas monitor and a substrate temperature monitor.
摘要翻译： CVD反应器装置包括用于夹持设置在CVD反应器中的衬底的前部的周边边缘并将反应器中的空间分成邻近衬底前部的第一空间的衬底夹具和邻近衬底前侧的第二空间底物。该装置还包括用于将反应器的内壁的表面温度冷却到等于或小于沉积下限的温度的单元，以及用于将CVD气体供应到邻近基板前部的第一空间并提供惰性气体在不同压力下靠近衬底背面的第二空间并且仅在衬底前部产生反应，反应气体监测器和衬底温度监测器。

17. 发明授权

US07300833B2 Process for producing semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件制造工艺
公开(公告)号：US07300833B2
公开(公告)日：2007-11-27
申请号：US11553690
申请日：2006-10-27
申请人： Naoki Yamamoto , Hiroyuki Uchiyama , Norio Suzuki , Eisuke Nishitani , Shin'ichiro Kimura , Kazuyuki Hozawa
发明人： Naoki Yamamoto , Hiroyuki Uchiyama , Norio Suzuki , Eisuke Nishitani , Shin'ichiro Kimura , Kazuyuki Hozawa
IPC分类号： H01L21/336 , H01L21/8236
CPC分类号： H01L21/28194 , H01L21/02057 , H01L21/02068 , H01L21/02071 , H01L21/0217 , H01L21/02211 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/28061 , H01L21/28176 , H01L21/28247 , H01L21/31662 , H01L21/67115 , H01L21/76838 , H01L21/823437 , H01L21/84 , H01L27/10814 , H01L27/10873 , H01L27/10894 , H01L27/1214 , H01L29/4941 , H01L29/518
摘要： When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.
摘要翻译：当在多晶硅膜上堆叠WN薄膜和W膜的多金属结构的栅极电极7A之后进行用于再生栅极绝缘膜6的氧化处理时，晶片1 在用于还原每个栅电极7A的侧壁上的W氧化物27的条件下被加热和冷却。结果，沉积在晶片1的表面上的W氧化物27的量减少。

18. 发明申请

US20070048917A1 Process for Producing Semiconductor Integrated Circuit Device 有权
标题翻译：生产半导体集成电路器件的工艺
公开(公告)号：US20070048917A1
公开(公告)日：2007-03-01
申请号：US11553690
申请日：2006-10-27
申请人： Naoki Yamamoto , Hiroyuki Uchiyama , Norio Suzuki , Eisuke Nishitani , Shin'ichiro Kimura , Kazuyuki Hozawa
发明人： Naoki Yamamoto , Hiroyuki Uchiyama , Norio Suzuki , Eisuke Nishitani , Shin'ichiro Kimura , Kazuyuki Hozawa
IPC分类号： H01L21/8234 , H01L21/8242 , H01L21/336 , H01L21/44 , H01L21/31
CPC分类号： H01L21/28194 , H01L21/02057 , H01L21/02068 , H01L21/02071 , H01L21/0217 , H01L21/02211 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/28061 , H01L21/28176 , H01L21/28247 , H01L21/31662 , H01L21/67115 , H01L21/76838 , H01L21/823437 , H01L21/84 , H01L27/10814 , H01L27/10873 , H01L27/10894 , H01L27/1214 , H01L29/4941 , H01L29/518
摘要： When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.
摘要翻译：当在多晶硅膜上堆叠WN薄膜和W膜的多金属结构的栅极电极7A之后进行用于再生栅极绝缘膜6的氧化处理时，晶片1 在用于还原每个栅电极7A的侧壁上的W氧化物27的条件下被加热和冷却。结果，沉积在晶片1的表面上的W氧化物27的量减少。

19. 发明授权

US5670421A Process for forming multilayer wiring 失效
标题翻译：多层布线形成工艺
公开(公告)号：US5670421A
公开(公告)日：1997-09-23
申请号：US589867
申请日：1996-01-23
申请人： Eisuke Nishitani , Susumu Tsuzuku , Shigeru Kobayashi , Osamu Kasahara , Hiroki Nezu , Masakazu Ishino , Tsuyoshi Tamaru
发明人： Eisuke Nishitani , Susumu Tsuzuku , Shigeru Kobayashi , Osamu Kasahara , Hiroki Nezu , Masakazu Ishino , Tsuyoshi Tamaru
IPC分类号： C23C16/02 , C23C16/04 , C23C16/06 , C23C16/54 , H01L21/28 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/768 , H01L23/522 , H01L21/441
CPC分类号： C23C16/0245 , C23C16/045 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , Y10S438/906
摘要： The present invention relates to a method for filling small via holes provided to insulating film on a wafer to expose parts of the underlayer of the wafer by metal by means of CVD, and an apparatus therefor. The gist of the present invention lies in that, before CVD is conducted, a surface cleaning treatment of small via hole bottom underlayer surface and a stabilization treatment of insulating film surface activated thereby are carried out successively or simultaneously and optionally an anti-corrosive treatment is applied to underlayer surface, and then the CVD treatment is conducted without exposing the underlayer metal subjected to above treatments to the air. The present invention provides an effect of enabling via filling by metal which shows good selectivity and gives a low interfacial resistance between underlayer metal and filled metal.
摘要翻译：本发明涉及一种用于填充设置在晶片上的绝缘膜的小通孔的方法，用于通过CVD将金属的部分金属暴露在晶片的底层上，以及其装置。本发明的要点在于，在进行CVD之前，依次或同时进行小通孔底底层表面的表面清洗处理和由此而被活化的绝缘膜表面的稳定化处理，任选地，防腐处理为施加到底层表面，然后进行CVD处理而不将经过上述处理的底层金属暴露在空气中。本发明提供能够通过金属进行通孔填充的效果，其显示出良好的选择性并且在下层金属和填充金属之间产生低的界面电阻。

20. 发明授权

US08833909B2 Liquid ejection head and liquid ejection method 有权
标题翻译：液体喷射头和液体喷射方法
公开(公告)号：US08833909B2
公开(公告)日：2014-09-16
申请号：US13559871
申请日：2012-07-27
申请人： Eisuke Nishitani , Toru Yamane , Tomoyuki Inoue
发明人： Eisuke Nishitani , Toru Yamane , Tomoyuki Inoue
IPC分类号： B41J2/05 , B41J2/14
CPC分类号： B41J2/1404 , B41J2002/14169 , B41J2002/14177 , B41J2202/11
摘要： A liquid ejection head including: includes an ejection orifice for ejecting liquid, a pressure chamber communicating with the ejection orifice, a flow path for supplying the liquid to the pressure chamber, and a first heat-generating element and a second heat-generating element for generating energy to be used for ejecting the liquid. The first heat-generating element is arranged in the pressure chamber before the second heat-generating element with respect to a supply direction of the liquid from the flow path to the pressure chamber. A portion between the first heat-generating element and the second heat-generating element is located within a projection of an opening of the ejection orifice, when viewed from a direction in which the liquid is ejected from the ejection orifice.
摘要翻译：一种液体喷射头，包括：包括用于喷射液体的喷射孔，与喷射孔连通的压力室，用于将液体供应到压力室的流路，以及第一发热元件和第二发热元件，产生用于喷射液体的能量。第一发热元件相对于液体从流路到压力室的供给方向设置在第二发热元件之前的压力室中。当从喷射口喷射液体的方向观察时，第一发热元件和第二发热元件之间的部分位于喷射孔的开口的突出部内。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式