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1. 发明授权

US06875280B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US06875280B2
公开(公告)日：2005-04-05
申请号：US09780951
申请日：2001-02-09
申请人： Kazuhito Ikeda , Eisuke Nishitani , Harunobu Sakuma , Kazuhiro Nakagomi
发明人： Kazuhito Ikeda , Eisuke Nishitani , Harunobu Sakuma , Kazuhiro Nakagomi
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , H01L21/31 , H01L21/677 , H01L21/687 , C23C16/00 , H01L21/00
CPC分类号： H01L21/67748 , C23C16/45521 , C23C16/4585 , C23C16/54 , H01L21/67751 , H01L21/68735
摘要： A substrate processing apparatus includes a chamber, a gas introducing portion, a gas discharge port, a substrate transfer gate, and a substrate moving member which moves the substrate between a substrate processing position where the substrate is processed in the chamber and a substrate transferring in-out position in the chamber where the substrate transferred into the chamber from the substrate transfer gate is located and where the substrate is located when the substrate is transferred out from the chamber through the substrate transfer gate. The gas introducing portion, the substrate processing position, the gas discharge port and the substrate transfer gate are disposed in this order. A gas restraining member which restrains processing gas for processing the substrate from flowing toward the substrate transfer gate is provided between the gas discharge port and the substrate transfer gate.
摘要翻译：一种基板处理装置，包括：室，气体导入部，气体排出口，基板输送栅极和基板移动部件，其使基板在基板处理位置和基板之间移动; 在基板从衬底传送门转移到室中的衬底的位置以及当衬底通过衬底传送门从腔室传出时位于衬底的位置。气体导入部，基板处理位置，气体排出口和基板输送口以该顺序设置。在气体排出口和基板输送口之间设置限制用于处理基板的处理气体朝向基板输送口流动的气体抑制构件。

2. 发明授权

US5795452A Dry process system 失效
标题翻译：干法系统
公开(公告)号：US5795452A
公开(公告)日：1998-08-18
申请号：US587822
申请日：1996-01-11
申请人： Haruhisa Kinoshita , Osamu Matsumoto , Harunobu Sakuma
发明人： Haruhisa Kinoshita , Osamu Matsumoto , Harunobu Sakuma
IPC分类号： C23C16/509 , H01J37/32 , H01J37/34 , C23C14/34 , C23C16/00 , C23F1/02
CPC分类号： H01J37/32623 , C23C16/5096 , H01J37/32082 , H01J37/32165 , H01J37/3266 , H01J37/3405
摘要： A dry process system comprising a chamber having an inlet for reaction gas and an exhaust port for exhaust gas, at least one pair of electrodes connected with an alternating current power source through a blocking capacitor, respectively, and one or more magnetic field applying means for generating a magnetic field nearly parallel to a surface of each electrode. The distance between adjacent electrodes is set to the extent that electrons can travel nearly without collision in the space between the adjacent electrodes. Since the distance between adjacent electrodes is narrow, one plasma generated in the neighborhood of one of the adjacent electrode and the other plasma generated in the neighborhood of another electrode can commingle with each other so that the distribution of plasma is made nearly equal, thus a nearly uniform plasma can be formed without a rotating magnetic field.
摘要翻译：一种干法处理系统，包括具有用于反应气体的入口和用于排气的排气口的室，分别通过隔离电容器与交流电源连接的至少一对电极和一个或多个磁场施加装置，产生几乎平行于每个电极的表面的磁场。相邻电极之间的距离被设定为电子在相邻电极之间的空间中几乎不发生碰撞地行进的程度。由于相邻电极之间的距离较窄，所以在邻近的电极附近产生的一个等离子体与另一个电极附近产生的其他等离子体相互结合，使得等离子体的分布几乎相等，可以在没有旋转磁场的情况下形成几乎均匀的等离子体。

3. 发明授权

US07943528B2 Substrate processing apparatus and semiconductor devices manufacturing method 有权
标题翻译：基板加工装置及半导体装置制造方法
公开(公告)号：US07943528B2
公开(公告)日：2011-05-17
申请号：US12868089
申请日：2010-08-25
申请人： Yoshihiko Yanagisawa , Mitsuro Tanabe , Harunobu Sakuma , Tadashi Takasaki
发明人： Yoshihiko Yanagisawa , Mitsuro Tanabe , Harunobu Sakuma , Tadashi Takasaki
IPC分类号： H01L21/46
CPC分类号： C23C16/482 , C23C16/463
摘要： Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
摘要翻译：在处理室中进行基板的基板处理，并且提高面内膜厚的均匀性。排气单元排出处理室中的气氛，并且供应由激励单元激发的处理气体。旋转驱动单元水平地旋转支撑安装基板的安装基板的支撑单元; 并且冷却剂供给/排出单元通过连接单元连接到支撑单元的下端。衬底安装单元在其中具有冷却剂循环路径。支撑单元包括用于使冷却剂通过冷却剂循环路径的第一冷却剂流动路径。冷却剂供给/排出单元包括第二冷却剂流动路径。连接单元将第一冷却剂流动路径和第二冷却剂流动路径连接在一起，并且设置在处理室的外部。

4. 发明授权

US08222161B2 Substrate processing apparatus and semiconductor devices manufacturing method 有权
标题翻译：基板加工装置及半导体装置制造方法
公开(公告)号：US08222161B2
公开(公告)日：2012-07-17
申请号：US13088907
申请日：2011-04-18
申请人： Yoshihiko Yanagisawa , Mitsuro Tanabe , Harunobu Sakuma , Tadashi Takasaki
发明人： Yoshihiko Yanagisawa , Mitsuro Tanabe , Harunobu Sakuma , Tadashi Takasaki
IPC分类号： H01L21/465
CPC分类号： C23C16/482 , C23C16/463
摘要： Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
摘要翻译：在处理室中进行基板的基板处理，并且提高面内膜厚的均匀性。排气单元排出处理室中的气氛，并且供应由激励单元激发的处理气体。旋转驱动单元水平地旋转支撑安装基板的安装基板的支撑单元; 并且冷却剂供给/排出单元通过连接单元连接到支撑单元的下端。衬底安装单元在其中具有冷却剂循环路径。支撑单元包括用于使冷却剂通过冷却剂循环路径的第一冷却剂流路。冷却剂供给/排出单元包括第二冷却剂流动路径。连接单元将第一冷却剂流动路径和第二冷却剂流动路径连接在一起，并且设置在处理室的外部。

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