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11. 发明授权

US4257011A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4257011A
公开(公告)日：1981-03-17
申请号：US929013
申请日：1978-07-28
申请人： Michiharu Nakamura , Shigeo Yamashita , Takao Kuroda , Jun-ichi Umeda
发明人： Michiharu Nakamura , Shigeo Yamashita , Takao Kuroda , Jun-ichi Umeda
IPC分类号： H01S5/12 , H01S5/223 , H01S3/19
CPC分类号： H01S5/12 , H01S5/2232 , H01S5/2234
摘要： A semiconductor laser device has stabilized longitudinal and transverse modes without excess optical noise for a modulated signal generated by mode interaction. The fundamental construction of the semiconductor laser device comprises a structure wherein a first semiconductor layer is sandwiched between second and third semiconductor layers which have a greater band gap and lower index of refraction than the first semiconductor layer. That region of at least one of the second and third semiconductor layers which is remote from the first semiconductor layer corresponds substantially to a radiation region and serves as a light non-absorptive region in the shape of a stripe. A semiconductor layer has portions lying on both sides of the semiconductor layer remote from the first semiconductor layer and has an effective complex refractive-index for laser light discontinuous at both ends of the semiconductor layer remote from the first semiconductor layer. Periodic corrugations which intersect orthogonally to the lengthwise direction of the stripe-shaped light non-absorptive region are formed in at least one interface of the semiconductor layers in a manner to include at least a region corresponding to the light non-absorptive region.
摘要翻译：半导体激光器件对于通过模式相互作用产生的调制信号具有稳定的纵向和横向模式而没有过多的光学噪声。半导体激光器件的基本结构包括其中第一半导体层夹在具有比第一半导体层更大的带隙和较低的折射率的第二和第三半导体层之间的结构。远离第一半导体层的第二和第三半导体层中的至少一个的区域基本上对应于辐射区域，并且用作条纹形状的光非吸收区域。半导体层具有位于远离第一半导体层的半导体层的两侧的部分，并且对于远离第一半导体层的半导体层的两端处的不连续的激光具有有效的复合折射率。以至少包括对应于光非吸收区域的区域的方式，在半导体层的至少一个界面中形成与条形光非吸收区域的长度方向垂直相交的周期波纹。

12. 发明授权

US07052189B2 Optical electronic device 有权
公开(公告)号：US07052189B2
公开(公告)日：2006-05-30
申请号：US10294698
申请日：2002-11-15
申请人： Hiroshi Naka , Masaaki Tsuchiya , Shigeo Yamashita
发明人： Hiroshi Naka , Masaaki Tsuchiya , Shigeo Yamashita
IPC分类号： G02B6/42
CPC分类号： G02B6/4201 , G02B6/4202 , G02B6/4204 , G02B6/4239 , G02B6/4243 , G02B6/4244 , G02B6/4245 , G02B6/4248 , G02B6/4251 , G02B6/4265 , G02B6/4274 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48465 , H01L2224/48471 , H01L2224/73265 , H01L2924/00014 , H01L2924/30107 , H01L2924/00 , H01L2224/4554
摘要： The present invention provides an optical electronic device which includes a package casing made of plastic, a plurality of metal-made leads which extend between the inside and the outside of the package casing and form electrode terminals at external portions thereof, a lead base which is arranged in an inner bottom of the package and is integrally formed with at least one or the plurality of leads, a support substrate which is fixed onto the lead base and includes a conductive layer of a given pattern on an upper surface thereof, an optical element which is fixed onto the support substrate, an optical fiber which extends between the inside and the outside of the package casing and has an inner end thereof to face the optical element to perform transmission and reception of light between the optical fiber and the optical element, one or a plurality of electronic parts fixed to the leads in the inside of the package casing, and conductive wires which electrically connect electrodes of the optical element, electrodes of the electronic parts, the conductive layer of the support substrate and the leads to each other when necessary, wherein the electronic part includes one or a plurality of upper electrodes on an upper surface thereof and the upper electrodes are connected to other conductive portions through conductive wires. Due to such a constitution, the reliability of mounting electronic parts can be enhanced.

13. 发明授权

US07029936B2 Semiconductor laser, device having reduced contact resistance and manufacturing method thereof 有权
标题翻译：半导体激光器，具有降低的接触电阻的器件及其制造方法
公开(公告)号：US07029936B2
公开(公告)日：2006-04-18
申请号：US10616923
申请日：2003-07-11
申请人： Haruki Fukai , Hidetaka Karita , Atsushi Nakamura , Shigeo Yamashita
发明人： Haruki Fukai , Hidetaka Karita , Atsushi Nakamura , Shigeo Yamashita
IPC分类号： H01L21/00
CPC分类号： H01S5/2231 , H01L2224/48091 , H01S5/02216 , H01S5/02248 , H01S5/02284 , H01S5/0421 , H01S5/0425 , H01S5/0683 , H01S5/2214 , H01S2301/173 , H01S2301/176 , H01L2924/00014
摘要： A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.
摘要翻译：提供能够降低接触电阻和热阻并实现高可靠性的半导体激光元件。半导体激光元件包括：半导体衬底，形成在半导体衬底上的有源层，在有源层上形成有覆层的脊和形成在覆盖层上的接触层，覆盖覆层侧表面的绝缘膜层和连接到所述接触层的电极，其中所述绝缘层具有位于所述接触层的上表面和下表面之间的脊厚度方向上的端部。

14. 发明授权

US5754015A Horizontal deflection circuit for multiscan type display devices 失效
标题翻译：用于多尺寸型显示装置的水平偏转电路
公开(公告)号：US5754015A
公开(公告)日：1998-05-19
申请号：US603973
申请日：1996-02-20
申请人： Shiro Nagaoka , Shigeo Yamashita
发明人： Shiro Nagaoka , Shigeo Yamashita
IPC分类号： G09G1/00 , G09G1/04 , G09G1/16 , H03K4/64 , H04N3/27 , H01J29/70
CPC分类号： H03K4/64 , H04N3/27
摘要： A multiscan compatible horizontal deflection driving circuit prevents the flow of an excessive current through a transistor in a horizontal deflecting circuit when the frequency of a horizontal synchronization signal is switched. In the horizontal deflection driving circuit according to the invention, when a frequency of an H sync pulse of an input composite video signal decreases, a driving power source voltage is reduced earlier than a reduction of a frequency of a horizontal driving pulse, thereby preventing an excessive collector current from flowing in the transistor in the horizontal deflecting circuit.
摘要翻译：当水平同步信号的频率被切换时，多尺寸兼容的水平偏转驱动电路防止过度电流流过水平偏转电路中的晶体管。在根据本发明的水平偏转驱动电路中，当输入的复合视频信号的H同步脉冲的频率降低时，驱动电源电压比水平驱动脉冲的频率的降低更早地降低，从而防止在水平偏转电路中晶体管中流过的集电极电流过大。

15. 发明授权

US4426702A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4426702A
公开(公告)日：1984-01-17
申请号：US283791
申请日：1981-07-15
申请人： Shigeo Yamashita , Hiroshi Matsuda , Uichiroo Kobayashi , Masayoshi Kobayashi , Hisao Nakashima
发明人： Shigeo Yamashita , Hiroshi Matsuda , Uichiroo Kobayashi , Masayoshi Kobayashi , Hisao Nakashima
IPC分类号： H01S5/00 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2275
摘要： This invention consists in improvements in a buried-heterostructure laser with buried optical guide, and facilitates the oscillation of the laser in the fundamental mode thereof and also enhances the available percentage of production of the laser. An active layer and an optical guide layer are sandwiched between two cladding layers, to form an optical confinement region. The width of the semiconductor material assembly varies in the direction of the stacked layers, and the narrowest part thereof is located on a side opposite to the optical guide layer with reference to the position of the active layer. The side surface of said semiconductor material assembly parallel to the traveling direction of laser radiation is buried by a burying layer.
摘要翻译：本发明在于利用掩埋光导的掩埋异质结构激光器的改进，并且促进了激光器在其基本模式下的振荡，并且还提高了激光器的可用生产百分比。有源层和光导层夹在两个包覆层之间，以形成光限制区域。半导体材料组件的宽度在堆叠层的方向上变化，并且其最窄部分参照有源层的位置位于与光导层相反的一侧。与激光辐射的行进方向平行的所述半导体材料组件的侧表面被掩埋层掩埋。

16. 发明授权

US4361887A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US4361887A
公开(公告)日：1982-11-30
申请号：US125779
申请日：1980-02-29
申请人： Michiharu Nakamura , Motohisa Hirao , Shigeo Yamashita , Tadashi Fukuzawa , Junichi Umeda
发明人： Michiharu Nakamura , Motohisa Hirao , Shigeo Yamashita , Tadashi Fukuzawa , Junichi Umeda
IPC分类号： H01L29/80 , H01L21/338 , H01L27/095 , H01L27/15 , H01L29/812 , H01S5/00 , H01S5/026 , H01S5/042 , H01S3/19
CPC分类号： H01S5/0265
摘要： A semiconductor laser light emitting element comprises a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein. The first and third semiconductor layers have smaller refractive indices and greater forbidden band gaps than the second semiconductor layer and are opposite in conductivity type to each other. Provided are on the substrate a field effect transistor section having first and second electrodes and a gate electrode disposed between the first and second electrodes, a means for serving as an optical resonator for emitting light in the lengthwise direction of the p-n junction. A means is formed on one surface of the laminate region for injecting current into the third semiconductor layer, the current injection means is short-circuited with the first electrode of the field transistor section and a means is formed on the substrate for receiving the current injected from the current injecting means.
摘要翻译：半导体激光发光元件包括半导体衬底，半导体层的层叠区域，其至少形成在衬底上并具有限定在其中的p-n结的第一，第二和第三半导体层。第一和第三半导体层具有比第二半导体层更小的折射率和更大的禁带宽度，并且与导电类型相反。在基板上设置有具有第一和第二电极的场效应晶体管部分和设置在第一和第二电极之间的栅电极，用作用于在p-n结的长度方向上发光的光谐振器的装置。在层叠区域的一个表面上形成用于将电流注入到第三半导体层中的装置，电流注入装置与场晶体管部分的第一电极短路，并且在基板上形成用于接收注入电流的装置从目前的注射手段。

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