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11. 发明申请

US20050272261A1 Plasma chemical vapor deposition method and plasma chemical vapor deposition device 有权
标题翻译：等离子体化学气相沉积法和等离子体化学气相沉积装置
公开(公告)号：US20050272261A1
公开(公告)日：2005-12-08
申请号：US10518371
申请日：2003-10-29
申请人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： C23C16/509 , H01J37/32 , H01L21/205 , H01J7/24 , H01L21/44 , H05B31/26
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32577
摘要： A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.
摘要翻译：提供了一种使膜厚分布特性均匀的方法，通过操纵传输高频电力的电缆的电气特性，避免了高频电力流之间的相位差的产生。同轴电缆（19 a至19 h和24 a至24 h）安装有标准长度和真空电缆（20 a至20 h和25 a至25 h），然后通过实际供电高度在基板上形成薄膜频率电力，然后观察气相沉积的条件，例如膜的厚度。基于这些观察，改变了与馈送点和电极相连的同轴电缆的全部长度，这些电极对应于需要调节的衬底上的位置。再次安装同轴电缆，提供与上次操作相同的高频电力，形成薄膜。通过重复上述操作，使形成在基板上的膜的分布均匀。

12. 发明申请

US20050241768A1 High frequency plasma generator and high frequency plasma generating method 失效
标题翻译：高频等离子体发生器和高频等离子体发生方法
公开(公告)号：US20050241768A1
公开(公告)日：2005-11-03
申请号：US10519553
申请日：2003-10-01
申请人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Yoshiaki Takeuchi
发明人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Yoshiaki Takeuchi
IPC分类号： H05H1/46 , C23C16/509 , C23F1/00 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32155 , H01J37/32091
摘要： An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.
摘要翻译：本发明的目的是提供一种高频等离子体发生装置和方法，与现有的装置相比，能够进一步提高基板上膜厚度的均匀性。在反应室（1）中设置接地电极（3），放电电极（2）与接地电极（3）相对设置。作为处理对象的基板（4）与接地电极（3）紧密接触。向放电电极（2）施加高频电压，以在接地电极和放电电极之间产生等离子体。 RF电源（15）产生第一高频电压，并且在放电电极（2）的侧面部分上的馈电点（9）上输出产生的电压。 RF电源（16）产生第二高频电压，并且在放电电极（2）的另一侧面部分上的馈电点（9）上输出产生的电压。这里，第二高频电压具有与第一高频电压相同的频率，并且具有随着由预定调制信号调制的低频信号而变化的相位。

13. 发明授权

US07319295B2 High-frequency power supply structure and plasma CVD device using the same 失效
标题翻译：高频电源结构和等离子体CVD装置使用相同
公开(公告)号：US07319295B2
公开(公告)日：2008-01-15
申请号：US10506544
申请日：2003-03-13
申请人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
发明人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
IPC分类号： H01J7/24
CPC分类号： H01J37/32577 , H01J37/32082
摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.
摘要翻译：提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

14. 发明申请

US20050127844A1 High-frequency power supply structure and plasma cvd device using the same 失效
标题翻译：高频电源结构和等离子cvd设备使用相同
公开(公告)号：US20050127844A1
公开(公告)日：2005-06-16
申请号：US10506544
申请日：2003-03-13
申请人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
发明人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
IPC分类号： C23C16/509 , H01J37/32 , H01L21/205 , H01J7/24
CPC分类号： H01J37/32577 , H01J37/32082
摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.
摘要翻译：提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

15. 发明申请

US20050223990A1 Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process 审中-公开
标题翻译：等离子体处理系统及其基板加工工艺，等离子体增强化学气相沉积系统及其薄膜沉积工艺
公开(公告)号：US20050223990A1
公开(公告)日：2005-10-13
申请号：US10519475
申请日：2003-10-01
申请人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： H05H1/46 , B01J19/08 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32183 , H01J37/32541
摘要： An object is to provide apparatuses for plasma processing which can make the distribution of the film thickness of a substance on a substrate uniform, methods of processing a substrate therewith, apparatuses for plasma-enhanced chemical vapor deposition, and methods for film formation therewith. When a desired substance is vapor deposited on the surface of a substrate (3), characteristics of the distribution of the thickness of a film on the substrate having a large area are improved by eliminating local imbalance in the distribution of the film thickness originating from deviation in the distribution of voltage on the ladder electrode (2), by way of adjusting impedance matching between each coaxial cable and corresponding feeding point for the ladder-shaped electrode (2) using branch cables provided to the coaxial cables for supplying high-frequency electric power to a ladder-shaped electrode (2) so as to make the film thickness uniform in the direction at right angles with the direction of fed electric power, whereby high-frequency electric power which is fed to each longitudinal electrode rod (2a) of the ladder-shaped electrode (2) can be adjusted, and distribution of voltage at a right or left part of the substrate and distribution of voltage at a central part of the substrate can be balanced, as well as by way of promoting uniformity in the distribution of the film thickness in the direction of fed electric power, by supplying streams of high-frequency electric power having the same frequency from two power supplies to the ladder-shaped electrode (2) with the phase difference between the high-frequency electric powers being varied over time.
摘要翻译：目的在于提供能够使基板上的物质的膜厚分布均匀的等离子体处理装置，用于处理基板的方法，等离子体增强化学气相沉积的装置及其成膜方法。当在基板（3）的表面上气相沉积所需物质时，通过消除由于偏差导致的膜厚度分布的局部不平衡，改善了具有大面积的基板上的膜的厚度分布特性在梯形电极（2）上的电压分配中，通过使用提供给用于提供高频电气的同轴电缆的分支电缆来调节每个同轴电缆与梯形电极（2）的相应馈电点之间的阻抗匹配向梯形电极（2）施加电力以使膜厚度与与馈送电力方向成直角的方向均匀，由此，供给到每个纵向电极棒（2a）的高频电力可以调节梯形电极（2），并且可以调整基板的右侧或左侧的电压分布以及中心部分的电压分布可以通过将来自两个电源的具有相同频率的高频电力的流提供给梯子，从而通过提高膜馈送电力方向上的膜厚分布的均匀性来平衡基板形状的电极（2），其中高频电功率之间的相位差随时间变化。

16. 发明授权

US5405447A Plasma CVD apparatus 失效
标题翻译：等离子体CVD装置
公开(公告)号：US5405447A
公开(公告)日：1995-04-11
申请号：US74738
申请日：1993-06-10
申请人： Masayoshi Murata , Yoshiaki Takeuchi , Masaru Kodama , Satoshi Uchida , Kazutoshi Hamamoto
发明人： Masayoshi Murata , Yoshiaki Takeuchi , Masaru Kodama , Satoshi Uchida , Kazutoshi Hamamoto
IPC分类号： C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32541
摘要： A plasma CVD apparatus whose discharge electrode is a single line member bent in a U shape in an alternating manner and in which a substrate to be processed is held substantially in parallel to the discharge electrode. The electric field around the electrode becomes stronger and the intensity distribution of this field becomes even. As a result, a product film formed on the substrate surface has a uniform thickness, and the film can be formed at high speeds.
摘要翻译：一种等离子体CVD装置，其放电电极是以交替的方式弯曲成U形的单线构件，并且其中待处理衬底基本上平行于放电电极保持。电极周围的电场变强，该场的强度分布变得均匀。结果，形成在基板表面上的产品膜具有均匀的厚度，并且可以高速地形成膜。

17. 发明授权

US5261962A Plasma-chemical vapor-phase epitaxy system comprising a planar antenna 失效
标题翻译：等离子体化学气相外延系统，包括平面天线
公开(公告)号：US5261962A
公开(公告)日：1993-11-16
申请号：US893010
申请日：1992-06-03
申请人： Kazutoshi Hamamoto , Satoshi Uchida , Masayoshi Murata , Yoshiaki Takeuchi , Masaru Kodama
发明人： Kazutoshi Hamamoto , Satoshi Uchida , Masayoshi Murata , Yoshiaki Takeuchi , Masaru Kodama
IPC分类号： C30B25/02 , C23C16/507 , C30B25/10 , H01J37/32 , H01L21/205 , C23C16/50
CPC分类号： H01J37/3222 , C23C16/507 , C30B25/105 , H01J37/32082 , H01J37/32165 , H01J37/32229
摘要： A plasma-chemical vapor-phase epitaxy system or a chemical vapor deposition (CVD) system can produce a large thin film of good quality. The CVD system includes a vacuum container having a quartz glass window, a substrate disposed within the vacuum container as opposed to the window, an antenna type discharge electrode disposed outside of the vacuum container as opposed to the window, and a high-frequency power supply for feeding electric power to the same electrode. In this way, by disposing an electrode outside of a container and exciting the reaction gas with high-frequency electromagnetic waves, a large thin film of good quality can be formed.

18. 发明授权

US5423915A Plasma CVD apparatus including rotating magnetic field generation means 失效
标题翻译：等离子CVD装置，包括旋转磁场产生装置
公开(公告)号：US5423915A
公开(公告)日：1995-06-13
申请号：US127377
申请日：1993-09-28
申请人： Masayoshi Murata , Yoshiaki Takeuchi
发明人： Masayoshi Murata , Yoshiaki Takeuchi
IPC分类号： C23C16/24 , C23C16/509 , H01J37/32 , C23C16/50
CPC分类号： H01J37/32082 , C23C16/24 , C23C16/5096 , H01J37/32623 , H01J37/3266 , H01J2237/3325 , H01J2237/3326
摘要： This invention provides a plasma CVD method aimed at forming an amorphous silicon thin film on a large-area substrate at a high speed and also an apparatus therefor. The method and apparatus are characterized by a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging the same, discharging electrodes accommodated in the reaction vessel, a source for supplying power for glow discharge to the discharging electrodes, two pairs of solenoid coils arranged on opposite sides of said reaction vessel and so disposed that the axes thereof perpendicularly intersect each other as well as perpendicularly the electric field formed between the discharging electrodes, and an AC source for supplying power to said solenoid coils for magnetic field generation, whereby an amorphous silicon thin film is formed on a substrate held to intersect perpendicularly the electric field between the discharging electrodes.
摘要翻译：本发明提供了一种旨在高速地在大面积基板上形成非晶硅薄膜的等离子体CVD方法及其装置。该方法和装置的特征在于反应容器，用于将反应气体送入反应容器并将其排出的装置，将容纳在反应容器中的电极放电，向放电电极供给辉光放电的电源，电磁线圈布置在所述反应容器的相对侧上并且被布置成使得其轴线垂直地彼此垂直地相交，并且垂直地形成在放电电极之间的电场;以及AC电源，用于向所述螺线管线圈供电用于产生磁场，由此在保持垂直于放电电极之间的电场的基板上形成非晶硅薄膜。

19. 发明授权

US07802649B2 Steering lock device for motorcycle 有权
标题翻译：摩托车转向锁装置
公开(公告)号：US07802649B2
公开(公告)日：2010-09-28
申请号：US11978725
申请日：2007-10-30
申请人： Takeshi Konno , Tadashi Onozuka , Yoshiaki Takeuchi
发明人： Takeshi Konno , Tadashi Onozuka , Yoshiaki Takeuchi
IPC分类号： B62H5/04 , B62H5/06
CPC分类号： B62H5/04 , B60R25/0221 , B60R2325/306 , E05B81/14 , G07C9/00309 , G07C2009/00769 , G07C2209/63 , Y10T70/5664 , Y10T70/5872
摘要： A steering lock device has a steering catch mechanism including a handlebar attached to a steering stem, and a locking arm attached to this handlebar and being equipped with a lock pin for engagement on the tip end portion thereof. The steering catch mechanism also includes a locking claw as an engaging portion that is engagable with the lock pin. The locking claw is usually biased in the unlocking direction. In this catch mechanism, the locking claw is disposed on a rotation track of the lock pin. Accordingly, when an external force is applied to the lock pin such that the lock pin is in contact with the locking claw of the catch mechanism, the locking claw is moved in the locking direction so that the locking claw can be engaged with the lock pin. Therefore, a steering-lock stand-by state is accomplished.
摘要翻译：转向锁定装置具有转向锁定机构，该转向锁定机构包括附接到转向杆的把手和连接到该把手的锁定臂，并且配备有用于在其末端部分上接合的锁定销。转向锁定机构还包括作为可与锁定销接合的接合部的锁定爪。锁定爪通常在解锁方向上偏置。在该止动机构中，锁定爪设置在锁定销的旋转轨道上。因此，当锁定销与锁定机构的锁定爪接触时，当锁定销被施加外力时，锁定爪在锁定方向上移动，使得锁定爪能够与锁定销接合。因此，完成了转向锁待机状态。

20. 发明授权

US07691362B2 Method for producing an α-alumina power 失效
标题翻译： α-氧化铝粉末的制造方法
公开(公告)号：US07691362B2
公开(公告)日：2010-04-06
申请号：US11211700
申请日：2005-08-26
申请人： Hajime Maki , Yoshiaki Takeuchi , Kazuhisa Kajihara
发明人： Hajime Maki , Yoshiaki Takeuchi , Kazuhisa Kajihara
IPC分类号： C01F7/02
CPC分类号： B82Y30/00 , C01F7/30 , C01F7/308 , C01P2004/64 , C01P2006/12
摘要： A method for producing an α-alumina powder is provided. T method for producing an α-alumina powder comprising steps of: (1) pulverizing a metal compound having a full width at half maximum (Ho) of a main peak in XRD pattern to obtain a seed crystal having a full width at half maximum (H) of the main peak in XRD pattern in the presence of pulverizing agent, (2) mixing the obtained seed crystal with an aluminum salt, (3) calcining the mixture, and wherein a ratio of H/Ho is 1.06 or more.
摘要翻译：提供了α-氧化铝粉末的制造方法。 T制造α-氧化铝粉末的方法，包括以下步骤：（1）以XRD图案粉碎主峰的半峰全宽（Ho）的金属化合物，得到半峰全宽的晶种（ H），（2）将得到的晶种与铝盐混合，（3）煅烧混合物，其中H / Ho比为1.06以上。

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