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    • 11. 发明授权
    • Heat shielding member of silicon single crystal pulling system
    • 硅单晶拉制系统的隔热构件
    • US07294203B2
    • 2007-11-13
    • US10527566
    • 2003-09-12
    • Kazuhiro HaradaYoji SuzukiSenlin FuHisashi FuruyaHidenobu Abe
    • Kazuhiro HaradaYoji SuzukiSenlin FuHisashi FuruyaHidenobu Abe
    • C30B35/00
    • C30B29/06C30B15/14C30B15/203Y10T117/1068Y10T117/1072Y10T117/1076Y10T117/1088
    • A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H2) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W2) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.
    • 在从存储在石英坩埚中的硅熔体中拉出硅单晶棒的装置中设置有隔热构件,并且配备有将来自围绕硅单晶棒的外周面的加热器的辐射热屏蔽的管部 ,设置在管部的下部的隆起部,以及设置在隆起部的内侧的环状积蓄部。 蓄热部的热导率为5W /(m·℃)以下,其内周面为10mm以上且d / 2以上的高度(H <1),或 硅单晶棒的直径称为d,硅单晶棒的外周面与蓄热的内周面之间的最小距离(W 1> 1)较小 部分形成为10mm以上且0.2d以下,外周面的上缘和蓄热部的最下部之间的垂直距离(H 2 2 N)为 10mm以上且d以下,石英坩埚的内周面与蓄热部的外周面之间的最小距离(W 2 2 <2)为20mm以上,d / 4以下。
    • 12. 发明申请
    • Heat shielding member of silicon single crystal pulling system
    • 硅单晶拉制系统的隔热构件
    • US20060124052A1
    • 2006-06-15
    • US10527566
    • 2003-09-12
    • Kazuhiro HaradaYoji SuzukiSenlin FuHisashi FuruyaHidenobu Abe
    • Kazuhiro HaradaYoji SuzukiSenlin FuHisashi FuruyaHidenobu Abe
    • C30B15/00
    • C30B29/06C30B15/14C30B15/203Y10T117/1068Y10T117/1072Y10T117/1076Y10T117/1088
    • A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H2) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W2) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.
    • 在从存储在石英坩埚中的硅熔体中拉出硅单晶棒的装置中设置有隔热构件,并且配备有将来自围绕硅单晶棒的外周面的加热器的辐射热屏蔽的管部 ,设置在管部的下部的隆起部,以及设置在隆起部的内侧的环状积蓄部。 蓄热部的热导率为5W /(m·℃)以下,其内周面为10mm以上且d / 2以上的高度(H <1),或 硅单晶棒的直径称为d,硅单晶棒的外周面与蓄热的内周面之间的最小距离(W 1> 1)较小 部分形成为10mm以上且0.2d以下,外周面的上缘和蓄热部的最下部之间的垂直距离(H 2 2 N)为 10mm以上且d以下,石英坩埚的内周面与蓄热部的外周面之间的最小距离(W 2 2 <2)为20mm以上,d / 4以下。
    • 14. 发明授权
    • Method for producing an olefin type copolymer having a cyclic structure
    • 具有环状结构的烯烃类共聚物的制造方法
    • US06627714B2
    • 2003-09-30
    • US09985488
    • 2001-11-05
    • Shigeharu YamamotoSakae KamiyamaToshifumi TakemoriYoji SuzukiKazuhiko MizunoYoko FuruyamaHiroshi Yamazaki
    • Shigeharu YamamotoSakae KamiyamaToshifumi TakemoriYoji SuzukiKazuhiko MizunoYoko FuruyamaHiroshi Yamazaki
    • C08F444
    • C08F232/08C08F4/65912C08F210/02Y10S526/905Y10S526/916C08F4/65927C08F2500/03C08F232/04
    • An olefinic copolymer having a cyclic structure is prepared by copolymerizing a) ethylene (M1) and b) dicyclopentadiene or tricyclopentadiene (M2), and, optionally c) a cyclic olefin (M3), in the presence of a catalyst which contains a metallocene compound (A) having formula [1]: H2C(R′mCp)(R″nCp)MX2[1], wherein M is zirconium or hafnium, Cp has a cyclopentadienyl skeleton, each of R′ and R″ is a hydrocarbon group having 1 to 10 carbon atoms, each of two X's which may be the same or different from each other, is a halogen, a hydrogen, a hydrocarbon group having 1 to 20 carbon atoms, a halogenated hydrocarbon group, an alkylamino group, an alkoxy group, an aryloxy group of the formula —O—Ar—Yp, a thioalkyl group, or a thioaryl group of the formula —S—Ar—Yp; wherein Ar is an aromatic ring, Y is a halogen, a hydrogen, a hydrocarbon group having 1 to 20 carbon atoms, a halogenated hydrocarbon group, an alkoxy group, an alkylamino group, a cyano group or a nitro group, and p is an integer of from 1 to 5, and each of m and n is an integer of from 0 to 4, provided that m and n are not equal, and m+n is an integer of from 3 to 6, and an aluminoxane (B), is used.
    • 具有环状结构的烯烃共聚物通过在含有茂金属化合物的催化剂存在下共聚a)乙烯(M1)和b)二环戊二烯或三环戊二烯(M2),和任选地c)环状烯烃(M3) (A)具有式[1]:H2C(R'mCp)(R''nCp)MX2 [1]其中M为锆或铪,Cp为环戊二烯基骨架,R'和R“为烃 具有1至10个碳原子的基团可以彼此相同或不同的两个X是卤素,氢,具有1至20个碳原子的烃基,卤代烃基,烷基氨基, 烷氧基,式-O-Ar-Yp的芳氧基,式-S-Ar-Yp的硫代烷基或硫代芳基; 其中Ar为芳环,Y为卤素,氢,碳原子数1〜20的烃基,卤代烃基,烷氧基,烷基氨基,氰基或硝基,p为 m和n分别为1〜5,m和n为0〜4的整数,m和n不相等,m + n为3〜6的整数,铝氧烷(B) , 用来。
    • 18. 发明申请
    • NETWORK SYSTEM AND VLAN TAG DATA ACQUIRING METHOD
    • 网络系统和VLAN标签数据采集方法
    • US20140016647A1
    • 2014-01-16
    • US14007341
    • 2012-03-21
    • Hirokazu YoshidaYoji SuzukiMassanori Takashima
    • Hirokazu YoshidaYoji SuzukiMassanori Takashima
    • H04L12/801
    • H04L47/10H04L12/4641H04L12/465H04L12/4666H04L45/38
    • In the present situation, a switch cannot identify inner tag data (VLAN ID data before QinQed in the input of OF-NW) given to each of packets which flow in an open flow network (OF-NW). Therefore, OF-NW composed only one VLAN cannot handle a plurality of VLANs. Specifically, a controller handles a plurality of VLANs in the OF-NW in which there is only one VLAN, by mapping the inner tag data given to the packets which flow through the OF-NW, and flow cookie data showing the flow entry corresponding to the packets which flow through the OF-NW. Specifically, the flow flowing into the OF-NW is transferred from the switch to the controller, and the controller learns VLAN ID data in the input of the OF-NW, and handles the plurality of VLANs by mapping this VLAN ID and the flow cookie data showing the flow entry corresponding to the packet in the OF-NW.
    • 在目前情况下,交换机无法识别给定在开放流网络(OF-NW)中的每个分组的内部标签数据(在IN-NW的输入中的QinQed之前的VLAN ID数据)。 因此,仅组合一个VLAN的OF-NW不能处理多个VLAN。 具体来说,控制器通过映射给予流经OF-NW的分组的内部标签数据,并且显示对应于流量条目的流入口的流量cookie数据来处理其中仅存在一个VLAN的OF-NW中的多个VLAN 流经OF-NW的数据包。 具体来说,流入OF-NW的流量从交换机传送到控制器,控制器学习OF-NW输入端的VLAN ID数据,并通过映射该VLAN ID和流量cookie来处理多个VLAN 显示对应于OF-NW中的分组的流条目的数据。