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    • 17. 发明申请
    • Method for controlling semiconductor device production process and a method for producing semiconductor devices
    • 半导体器件制造方法的控制方法以及半导体器件的制造方法
    • US20060183040A1
    • 2006-08-17
    • US11304778
    • 2005-12-16
    • Hideaki SasazawaYasuhiro Yoshitake
    • Hideaki SasazawaYasuhiro Yoshitake
    • G03C5/00
    • G03F7/70641
    • In order to realize individually and easily optimization of exposure conditions such as exposure dose and focus by photolithography in a production process of semiconductor devices, the present invention is such that: light is radiated onto a pattern on a semiconductor wafer; by an optical system that detects information on a pattern shape using scattered light by its reflection, waveforms of an FEM sample wafer having a plurality of shape deformation patterns prepared in advance are detected and stored; one or more characteristic points on a spectral waveform generated in association with a pattern change is recorded; and a variation model of the characteristic points is obtained. As to a pattern to be measured, a spectral waveform is detected in the same manner as that described above, and deviations (exposure dose deviation and focus deviation) of the formation conditions are estimated from a displacement of the characteristic points on the waveform using the variation model. Thereby, the exposure dose and focus can be independently fed back and the process control can be achieved with high accuracy.
    • 为了在半导体器件的生产过程中实现通过光刻的曝光量和曝光量等的曝光条件的单独和容易的优化,本发明使得:将光照射到半导体晶片上的图案上; 通过利用其反射检测使用散射光的图案形状的信息的光学系统,检测并存储具有预先准备的多个形状变形图案的FEM样品晶片的波形; 记录与图案变化相关联地生成的光谱波形上的一个或多个特征点; 并获得特征点的变化模型。 对于要测量的图案,以与上述相同的方式检测光谱波形,并且使用波形的波形上的特征点的位移来估计形成条件的偏差(曝光剂量偏差和聚焦偏差) 变异模型。 因此,可以独立地反馈曝光剂量和聚焦,并且可以以高精度实现过程控制。