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    • 16. 发明申请
    • Methods and systems for electroplating wafers
    • 电镀晶圆的方法和系统
    • US20060191784A1
    • 2006-08-31
    • US11069800
    • 2005-02-28
    • Robert HitzfeldJennifer LooMurali Ramasubramanian
    • Robert HitzfeldJennifer LooMurali Ramasubramanian
    • C25D17/00C25D5/20C25D5/02
    • C25D17/001C25D3/38C25D5/08C25D21/12H01L21/2885
    • Improved methods and systems for electroplating wafers are described herein. The method includes the acts of introducing a wafer which is coupled to an electrode into an electroplating cell having a counter electrode; maintaining a flow of a plating solution through the cell for electroplating the wafer; removing the wafer from the cell; stopping the flow of the plating solution through the cell; maintaining a volume of plating solution within the cell sufficient to keep the counter electrode submerged during stoppage of flow; removing the plating solution within the cell; and repeating the above steps for a subsequent wafer. By stopping the flow of plating solution after completion of plating one or more wafers, a consumption rate of additives enhancing electroplating properties is reduced, a production rate of breakdown products produced during electroplating is reduced, plating solution useable life is increased, and a need for plating solution analysis is reduced.
    • 本文描述了用于电镀晶片的改进的方法和系统。 该方法包括将与电极耦合的晶片引入具有对电极的电镀单元中的动作; 保持电镀溶液流过用于电镀晶片的电池; 从电池中取出晶片; 停止电镀溶液通过电池的流动; 保持电池内的电镀液体积足以使反电极在流动停止期间淹没; 去除细胞内的电镀液; 并重复上述步骤以用于随后的晶片。 通过在一个或多个晶片的电镀完成之后停止电镀溶液的流动,降低电镀性能的添加剂的消耗速率降低,电镀期间产生的击穿产物的生产率降低,电镀溶液的使用寿命增加, 电镀液分析减少。