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11. 发明申请

US20050258468A1 Dual work function metal gate integration in semiconductor devices 有权
标题翻译：双功能金属门集成在半导体器件中
公开(公告)号：US20050258468A1
公开(公告)日：2005-11-24
申请号：US10890365
申请日：2004-07-13
申请人： Luigi Colombo , James Chambers , Mark Visokay
发明人： Luigi Colombo , James Chambers , Mark Visokay
IPC分类号： H01L21/3205 , H01L21/8234 , H01L21/8238 , H01L29/49 , H01L29/76 , H01L29/78
CPC分类号： H01L21/823842 , H01L29/4958
摘要： The present invention provides, in one embodiment, a process for forming a dual work function metal gate semiconductor device (100). The process includes providing a semiconductor substrate (105) having a gate dielectric layer (110) thereon and a metal layer (205) on the gate dielectric layer. A work function of the metal layer is matched to a conduction band or a valence band of the semiconductor substrate. The process also includes forming a conductive barrier layer (210) on a portion (215) of the metal layer and a material layer (305) on the metal layer. The metal layer and the material layer are annealed to form a metal alloy layer (405) to thereby match a work function of the metal alloy layer to another of the conduction band or the valence band of the substrate. Other embodiments of the invention include a dual work function metal gate semiconductor device (900) and an integrated circuit (1000).
摘要翻译：本发明在一个实施例中提供了一种用于形成双功函数金属栅极半导体器件（100）的工艺。该方法包括提供其上具有栅极电介质层（110）的半导体衬底（105）和栅极电介质层上的金属层（205）。金属层的功函数与半导体衬底的导带或价带相匹配。该方法还包括在金属层的一部分（215）和金属层上的材料层（305）上形成导电阻挡层（210）。对金属层和材料层进行退火以形成金属合金层（405），从而将金属合金层的功函数与衬底的导带或价带中的另一个相匹配。本发明的其它实施例包括双功函数金属栅极半导体器件（900）和集成电路（1000）。

12. 发明申请

US20050059198A1 Metal gate MOS transistors and methods for making the same 有权
标题翻译：金属栅极MOS晶体管及其制造方法
公开(公告)号：US20050059198A1
公开(公告)日：2005-03-17
申请号：US10661130
申请日：2003-09-12
申请人： Mark Visokay , Luigi Colombo , James Chambers
发明人： Mark Visokay , Luigi Colombo , James Chambers
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8238 , H01L29/49 , H01L29/51 , H01L21/44 , H01L29/76
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823842 , H01L29/513 , H01L29/517 , H01L29/665
摘要： Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. Metal boride is formed above a gate dielectric to create PMOS gate structures and metal nitride is formed over a gate dielectric to provide NMOS gate structures. The metal portions of the gate structures are formed from an initial starting material that is either a metal boride or a metal nitride, after which the starting material is provided with boron or nitrogen in one of the PMOS and NMOS regions through implantation, diffusion, or other techniques, either before or after formation of the conductive upper material, and before or after gate patterning. The change in the boron or nitrogen content of the starting material provides adjustment of the material work function, thereby tuning the threshold voltage of the resulting PMOS or NMOS transistors.
摘要翻译：提供了半导体器件和制造方法，其中为MOS晶体管提供金属晶体管栅极。金属硼化物形成在栅极电介质上方以产生PMOS栅极结构，并且在栅极电介质上形成金属氮化物以提供NMOS栅极结构。栅极结构的金属部分由起始原料是金属硼化物或金属氮化物形成，之后起始材料通过注入，扩散或扩散形成在PMOS和NMOS区域之一中的硼或氮中。在形成导电上部材料之前或之后以及栅极图案化之前或之后的其它技术。起始材料的硼或氮含量的变化提供材料功函数的调整，从而调谐所得PMOS或NMOS晶体管的阈值电压。

13. 发明授权

US10906708B2 Systems and methods associated with a drinking container with a solid, integrated valve 有权
公开(公告)号：US10906708B2
公开(公告)日：2021-02-02
申请号：US16043948
申请日：2018-07-24
申请人： James Chambers , Anna Carin Cecilia Chambers
发明人： James Chambers , Anna Carin Cecilia Chambers
IPC分类号： B65D41/04 , B65D43/02 , B65D47/06 , B65D51/16 , A47G19/22 , B65D47/32 , B65D47/20
摘要： A drinking container with an integrated valve that uses surface tension to control the flow of fluid.

14. 发明申请

US20070134886A1 Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication 有权
标题翻译：用于减轻浅沟槽隔离制造的蚀刻停止限幅的方法和系统
公开(公告)号：US20070134886A1
公开(公告)日：2007-06-14
申请号：US11678107
申请日：2007-02-23
申请人： Manuel Quevedo-Lopez , James Chambers , Leif Olsen
发明人： Manuel Quevedo-Lopez , James Chambers , Leif Olsen
IPC分类号： H01L21/76
CPC分类号： H01L29/7842 , H01L21/76224 , H01L21/823807 , H01L21/823878
摘要： The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.
摘要翻译：本发明通过在沟槽填充操作期间保持蚀刻停止层（206）的形状和密度来促进半导体制造。通过在沟槽填充操作之前在蚀刻停止层（206）上形成保护合金衬垫层（310）来保持蚀刻停止层（206）的形状和密度。保护合金衬套（310）由对沟槽填充操作中使用的材料具有耐受性的合金构成。结果，减轻了对蚀刻停止层（206）的削波和/或损伤，从而有利于采用蚀刻停止层（206）的随后的平坦化工艺。此外，形成的保护合金（310）的厚度和组成（1706）的选择产生施加到未成形晶体管器件的沟道区域的应力量和类型（1704），最终提供了沟道迁移率的改善。

15. 发明申请

US20070072363A1 Method for fabricating transistor gate structures and gate dielectrics thereof 审中-公开
公开(公告)号：US20070072363A1
公开(公告)日：2007-03-29
申请号：US11549340
申请日：2006-10-13
申请人： Mark Visokay , Luigi Colombo , James Chambers , Antonio Rotondaro , Haowen Bu
发明人： Mark Visokay , Luigi Colombo , James Chambers , Antonio Rotondaro , Haowen Bu
IPC分类号： H01L21/8242
CPC分类号： H01L21/28185 , H01L21/02148 , H01L21/02271 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L21/3162 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L29/517 , H01L29/518
摘要： Methods are disclosed for treating deposited gate dielectric materials, in which the deposited dielectric is subjected to one or more non-oxidizing anneals to densify the material, one or more oxidizing anneals to mitigate material defects, and to a nitridation process to introduce nitrogen into the gate dielectric. The annealing may be performed before and/or after the nitridation to mitigate deposition and/or nitridation defects and to densify the material while mitigating formation of unwanted low dielectric constant oxides at the interface between the gate dielectric and the semiconductor substrate.

16. 发明申请

US20070037333A1 Work function separation for fully silicided gates 审中-公开
标题翻译：完全硅化栅的工作功能分离
公开(公告)号：US20070037333A1
公开(公告)日：2007-02-15
申请号：US11203716
申请日：2005-08-15
申请人： Luigi Colombo , James Chambers , Mark Visokay
发明人： Luigi Colombo , James Chambers , Mark Visokay
IPC分类号： H01L21/8234
CPC分类号： H01L21/823835 , H01L21/823842
摘要： Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal is added to a first region of polysilicon overlying a dielectric that is on a substrate, and a second metal is added to a second region of the polysilicon. A third metal is formed over the first and second regions and a silicidation process if performed to form a first alloy in the first region and a second alloy in the second region. First and second segregated regions are also established adjacent to the dielectric in the first and second regions, respectively. The first and second metals serve to shift or adjust respective values of first and second work functions in the first and second regions.
摘要翻译：公开了具有不同功函数的金属栅极晶体管。在一个示例中，将第一金属添加到覆盖在衬底上的电介质上的多晶硅的第一区域中，并且将第二金属添加到多晶硅的第二区域。在第一和第二区域上形成第三金属，如果在第一区域中形成第一合金并且在第二区域中形成第二合金，则形成硅化工艺。第一和第二分离区域也分别在第一和第二区域中的电介质附近建立。第一和第二金属用于移动或调整第一和第二区域中的第一和第二功函数的相应值。

17. 发明申请

US20060246647A1 Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS silicon oxynitride dielectric formation using direct nitridation of silicon 有权
标题翻译：半导体CMOS器件和方法与NMOS高k电介质之间形成核心PMOS氮氧化硅介质形成之前，采用直接氮化硅
公开(公告)号：US20060246647A1
公开(公告)日：2006-11-02
申请号：US11118842
申请日：2005-04-29
申请人： Mark Visokay , Luigi Colombo , James Chambers
发明人： Mark Visokay , Luigi Colombo , James Chambers
IPC分类号： H01L21/8238 , H01L21/8242
CPC分类号： H01L27/105 , H01L21/823842 , H01L21/823857 , H01L27/11 , H01L27/1116
摘要： The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively form high-k dielectric layers within NMOS regions. An oxide layer is formed in core and I/O regions of a semiconductor device (506). The oxide layer is removed (508) from the core region of the device. A high-k dielectric layer is formed (510) over the core and I/O regions. Then, the high-k dielectric layer is removed (512) from PMOS regions of the core and I/O regions. A silicon nitride layer is grown (516) within PMOS regions of the core and I/O regions by a low temperature thermal process. Subsequently, an oxidation process is performed (518) that oxidizes the silicon nitride into silicon oxynitride.
摘要翻译：本发明通过提供在NMOS区内选择性地形成高k电介质层的制造方法来促进半导体制造。在半导体器件（506）的芯和I / O区域中形成氧化物层。氧化物层从器件的核心区域移除（508）。在芯和I / O区域上形成高k电介质层（510）。然后，从芯和I / O区域的PMOS区域去除高k电介质层（512）。通过低温热处理在核心和I / O区域的PMOS区域内生长氮化硅层（516）。随后，进行氧化处理（518），其将氮化硅氧化成氮氧化硅。

18. 发明申请

US20060108119A1 Riser rotating control device 有权
公开(公告)号：US20060108119A1
公开(公告)日：2006-05-25
申请号：US10995980
申请日：2004-11-23
申请人： Thomas Bailey , James Chambers
发明人： Thomas Bailey , James Chambers
IPC分类号： E21B33/035
CPC分类号： E21B33/085 , Y10S285/92
摘要： A latch assembly is connectable to a riser. A rotating control device can be positioned with the riser, sealing the rotating control device with the latch assembly and removably latching the rotating control device to the latch assembly and to the riser. The latch assembly can be remotely actuated. The latch assembly can provide an auxiliary safety mechanism to provide a backup actuation mechanism to unlatch the rotating control device from the latch assembly. The latch assembly can be bolted to the riser. Alternately, the latch assembly can be latched with the riser using a similar latching mechanism as used to latch the latch assembly to the rotating control device. A pressure transducer protector assembly can protect a transducer for monitoring wellbore pressure in the riser. A remote indicator panel can indicate the status of the latch assembly.

19. 发明申请

US20060102387A1 Internal riser rotating control head 有权
标题翻译：内部提升管旋转控制头
公开(公告)号：US20060102387A1
公开(公告)日：2006-05-18
申请号：US11284308
申请日：2005-11-21
申请人： Darryl Bourgoyne , Don Hannegan , Thomas Bailey , James Chambers , Timothy Wilson
发明人： Darryl Bourgoyne , Don Hannegan , Thomas Bailey , James Chambers , Timothy Wilson
IPC分类号： E21B15/02
CPC分类号： E21B23/006 , E21B21/001 , E21B21/08 , E21B33/085 , E21B2021/006
摘要： A holding member provides for releasably positioning a rotating control head assembly in a subsea housing. The holding member engages an internal formation in the subsea housing to resist movement of the rotating control head assembly relative to the subsea housing. The rotating control head assembly is sealed with the subsea housing when the holding member engages the internal formation. An extendible portion of the holding member assembly extrudes an elastomer between an upper portion and a lower portion of the internal housing to seal the rotating control head assembly with the subsea housing. Pressure relief mechanisms release excess pressure in the subsea housing and a pressure compensation mechanism pressurize bearings in the bearing assembly at a predetermined pressure.
摘要翻译：保持构件用于将旋转的控制头组件可释放地定位在海底外壳中。保持构件接合海底外壳内的内部结构，以抵抗旋转控制头组件相对于海底外壳的移动。当保持构件接合内部结构时，旋转控制头组件被海底壳体密封。保持构件组件的可延伸部分在弹性体的内部壳体的上部和下部之间挤压弹性体，以与海底壳体密封旋转的控制头组件。压力释放机构释放海底外壳中的过压，并且压力补偿机构以预定的压力对轴承组件中的轴承加压。

20. 发明授权

US09074443B2 Apparatus and method for data transmission from a rotating control device 有权
标题翻译：用于从旋转控制装置进行数据传输的装置和方法
公开(公告)号：US09074443B2
公开(公告)日：2015-07-07
申请号：US12500566
申请日：2009-07-09
申请人： Kevin L. Gray , Thomas F. Bailey , James Chambers
发明人： Kevin L. Gray , Thomas F. Bailey , James Chambers
IPC分类号： E21B47/12 , E21B21/08 , E21B33/08 , E21B17/01
CPC分类号： E21B33/085 , E21B3/02 , E21B7/12 , E21B17/01 , E21B21/08 , E21B33/064 , E21B47/00 , E21B47/06 , E21B47/065 , E21B47/12 , E21B47/122 , G01V11/002
摘要： The present invention generally relates to an apparatus and a method of transmitting data from a rotating control device. In one aspect, a method of transmitting data from a rotating control device coupled to an offshore drilling unit is provided. The method includes the step of generating data relating to a parameter associated with the rotating control device. The method further includes the step of transmitting the data from a transmitting assembly coupled to the rotating control device to a receiving assembly positioned proximate the transmitting assembly. Additionally, the method includes the step of transmitting the data from the receiving assembly to the offshore drilling unit. In another aspect, a data gathering and transmitting system for use with a rotating control device coupled to an offshore drilling unit is provided. In a further aspect, a method for transmitting data generated in a rotating control device coupled to a riser is provided.
摘要翻译：本发明一般涉及从旋转控制装置发送数据的装置和方法。一方面，提供一种从耦合到海上钻井单元的旋转控制装置传送数据的方法。该方法包括生成与旋转控制装置相关的参数有关的数据的步骤。该方法还包括将数据从耦合到旋转控制装置的发送组件传送到靠近发射组件定位的接收组件的步骤。此外，该方法包括将数据从接收组件传送到海上钻井单元的步骤。在另一方面，提供了一种与耦合到海上钻井单元的旋转控制装置一起使用的数据收集和传送系统。在另一方面，提供一种用于传送在连接到提升管的旋转控制装置中产生的数据的方法。

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