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11. 发明申请

US20050156212A1 CMOS pixel with dual gate PMOS 有权
标题翻译：具有双栅极PMOS的CMOS像素
公开(公告)号：US20050156212A1
公开(公告)日：2005-07-21
申请号：US11068283
申请日：2005-02-28
申请人： Taner Dosluoglu , Nathaniel McCaffrey
发明人： Taner Dosluoglu , Nathaniel McCaffrey
IPC分类号： H01L21/8238 , H01L27/092 , H01L27/146 , H01L29/10 , H01L29/76 , H01L31/036 , H01L31/10 , H01L31/112 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L31/112
摘要： A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N− well potential so that they remain reverse biased with respect to the N− well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N− well forms a second gate for the dual gate PMOS transistor since the potential of the N− well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N− well.
摘要翻译：具有双栅极PMOS的像素电路通过在N阱中形成两个P + +区形成。 N＆lt;＆gt; - 孔是在P + - SUP型衬底中。两个P + SUP区域形成PMOS晶体管的源极和漏极。形成在N阱内的PMOS晶体管不会影响光电荷的收集，只要PMOS晶体管的源极和漏极电位被设置在比N - 阱电位，使得它们相对于N 阱保持反向偏置。用于形成源极和漏极区域的一个P + SUP区域可用于在读取该像素以准备下一个累积光电荷循环之后复位像素。由于NΩ阱12的电位影响PMOS晶体管的沟道的导电性，因此N阱构成了双栅极PMOS晶体管的第二栅极。添加两个NMOS晶体管使读出信号能够存储在NMOS晶体管之一的栅极处，从而使快照成像器成为可能。该电路可以扩展以形成在N阱中共享一个共同漏极的两个PMOS晶体管。

12. 发明授权

US06911712B2 CMOS pixel using vertical structure and sub-micron CMOS process 失效
标题翻译： CMOS像素使用垂直结构和亚微米CMOS工艺
公开(公告)号：US06911712B2
公开(公告)日：2005-06-28
申请号：US10439925
申请日：2003-05-16
申请人： Taner Dosluoglu , Nathaniel Joseph McCaffrey
发明人： Taner Dosluoglu , Nathaniel Joseph McCaffrey
IPC分类号： H01L27/146 , H01L31/10
CPC分类号： H01L27/14609 , H01L27/14647
摘要： A CMOS pixel responsive to different colors of optical radiation without the use of color filters is described. A deep N well is formed in a P type silicon substrate. An N well is then formed at the outer periphery of the deep N well to form a P well within an N well structure. Two N+ regions are formed in the P well and at least one P+ region is formed in the N well. A layer of gate oxide and a polysilicon electrode is then formed over one of the N+ regions. The PN junction between the deep N well and the P type silicon substrate is responsive to red light. The PN junction between the deep N well and the P well is responsive to red light. The PN junction between the P well and the N+ region which is not covered by polysilicon and the PN junction formed by the N well and the P+ region are responsive to green or blue light. The PN junction formed by the junction between the P well and the N+ region which is covered by polysilicon is responsive to green light. The green signal is subtracted from the blue/green signal to produce a blue signal.
摘要翻译：描述了响应不同颜色的光辐射而不使用滤色器的CMOS像素。在P型硅衬底中形成深N阱。然后在深N阱的外周形成N阱，以在N阱结构内形成P阱。在P阱中形成两个N + +区域，并且在N阱中形成至少一个P + +区域。然后在N + +区域之一上形成一层栅极氧化物和多晶硅电极。深N阱和P型硅衬底之间的PN结对红光有响应。深N井和P井之间的PN结对红光有反应。未被多晶硅覆盖的P阱和N + +区域之间的PN结以及由N阱和P + +区形成的PN结对绿色或蓝光。由P阱和由多晶硅覆盖的N + +区之间的结形成的PN结响应于绿光。从蓝色/绿色信号中减去绿色信号以产生蓝色信号。

13. 发明授权

US06410905B1 CCD with enhanced output dynamic range 失效
标题翻译： CCD具有增强的输出动态范围
公开(公告)号：US06410905B1
公开(公告)日：2002-06-25
申请号：US09466420
申请日：1999-12-17
申请人： Denis L Heidtmann , Morley M Blouke , Taner Dosluoglu
发明人： Denis L Heidtmann , Morley M Blouke , Taner Dosluoglu
IPC分类号： H01L3100
CPC分类号： H01L29/76883 , H01L29/76866
摘要： A CCD has a floating diffusion for receiving charge packets to be sensed, a reset diffusion connected to a reference potential level and a reset channel region between the floating diffusion and the reset diffusion. A first reset gate is positioned over a first segment of the reset channel region for controlling the conductivity of the first segment in accordance with the potential of the first reset gate, and a second reset gate is positioned over a second segment of the reset channel region between the first reset gate and the reset diffusion for controlling the conductivity of the second segment in accordance with the potential of the second reset gate. Each reset gate has a first state in which the respective segment of the reset channel region is conductive and a second state in which the respective segment of the reset channel region is not conductive, whereby a charge packet entering the floating diffusion sees a relatively small effective capacitance when the first reset gate is in the second state and sees a relatively large effective capacitance when the first reset gate is in the first state and the second reset gate is in the second state. A reset gate controller controls dynamically the states of the first and second reset gates in accordance with predicted size of a charge packet entering the floating diffusion.
摘要翻译： CCD具有用于接收要感测的电荷分组的浮动扩散，连接到参考电位电平的复位扩散和浮置扩散与复位扩散之间的复位通道区域。第一复位门位于复位沟道区的第一段之上，用于根据第一复位栅的电位控制第一段的导电性，并且第二复位栅位于复位沟道区的第二段上在第一复位栅极和复位扩散之间，用于根据第二复位栅极的电位来控制第二段的电导率。每个复位栅极具有第一状态，其中复位沟道区域的各个区段是导通的，并且第二状态，其中复位沟道区域的各个区段不导电，由此进入浮动扩散的电荷分组看起来相对较小的有效当第一复位栅极处于第二状态时，当第一复位栅极处于第一状态并且第二复位栅极处于第二状态时，其具有相对较大的有效电容。复位门控制器根据进入浮动扩散的电荷分组的预测大小动态地控制第一和第二复位门的状态。

14. 发明授权

US06218211B1 Method of fabricating a thinned CCD 失效
标题翻译：制造薄膜CCD的方法
公开(公告)号：US06218211B1
公开(公告)日：2001-04-17
申请号：US09539407
申请日：2000-03-31
申请人： Morley M. Blouke , Taner Dosluoglu
发明人： Morley M. Blouke , Taner Dosluoglu
IPC分类号： H01L2100
CPC分类号： H01L27/14806
摘要： An integrated circuit device structure comprises a semiconductor plateau containing an active region subjacent its front side, an electrode structure at the front side of the plateau, and an insulating layer surrounding the semiconductor plateau. A front side bus at the front side of the insulating layer is connected to the electrode structure. The front side bus extends over an elongate aperture in the insulating layer and is connected through the aperture to a back side bus over substantially the entire length of the front side bus.
摘要翻译：集成电路器件结构包括半导体平台，其中包含位于其前侧的有源区，在平台前侧的电极结构以及围绕半导体平台的绝缘层。绝缘层前侧的前侧母线与电极结构连接。前侧总线延伸在绝缘层中的细长孔上，并通过孔径连接到背面总线上，在前端总线的基本上整个长度上。

15. 发明申请

US20190265769A1 METHOD AND APPARATUS FOR IMPROVING INTEGRITY OF PROCESSOR VOLTAGE SUPPLY WITH SUPPORT FOR DVFS 审中-公开
公开(公告)号：US20190265769A1
公开(公告)日：2019-08-29
申请号：US16286041
申请日：2019-02-26
申请人： Anatoly Gelman , Taner Dosluoglu
发明人： Anatoly Gelman , Taner Dosluoglu
IPC分类号： G06F1/30 , H03K5/01 , H03H7/06
摘要： Dedicated circuitry may monitor a processor supply voltage and provide additional power on a temporary nano-second scale basis to the processor when the supply voltage drops below predetermined levels. This may be done without explicit knowledge of a commanded supply voltage level for the processor.

16. 发明授权

US08213710B2 Apparatus and method for shift invariant differential (SID) image data interpolation in non-fully populated shift invariant matrix 有权
标题翻译：非完全填充移位不变矩阵中移位不变差分（SID）图像数据插值的装置和方法
公开(公告)号：US08213710B2
公开(公告)日：2012-07-03
申请号：US11998127
申请日：2007-11-28
申请人： Taner Dosluoglu
发明人： Taner Dosluoglu
IPC分类号： G06K9/00
CPC分类号： G06T3/4015
摘要： An image processing system interpolates image data of an image array by ascertaining shift invariant points and non-shift invariant points within the array. The average illumination and the second order derivative are determined for the shift invariant locations. The second order derivative and the intensity at the non-shift invariant locations for each of the non-shift invariant points are estimated. The color data for each color element is determined from the image data and second order derivative. The second order derivative is multiplied by a scaling factor for selectively smoothing and sharpening the second order derivative. The color data values of adjacent color element to enhance a resolution of the image data.
摘要翻译：图像处理系统通过确定阵列内的位移不变点和非移位不变点来内插图像阵列的图像数据。为移位不变位置确定平均照度和二阶导数。估计每个非移位不变点的二阶导数和非移位不变位置处的强度。根据图像数据和二阶导数确定每个颜色元素的颜色数据。将二阶导数乘以缩放因子，以选择性地平滑和锐化二阶导数。相邻颜色元素的颜色数据值，以增强图像数据的分辨率。

17. 发明授权

US08184190B2 Simultaneous global shutter and correlated double sampling read out in multiple photosensor pixels 失效
标题翻译：在多个光电传感器像素中同时读取全局快门和相关双采样
公开(公告)号：US08184190B2
公开(公告)日：2012-05-22
申请号：US11998126
申请日：2007-11-28
申请人： Taner Dosluoglu
发明人： Taner Dosluoglu
IPC分类号： H04N3/14 , H01L27/00
CPC分类号： H04N5/3575 , H04N5/353 , H04N5/3532
摘要： An apparatus controls operation of an array of color multiple sensor pixel image sensors to provide a global shuttering for one half of the color multiple sensor pixel image sensors and a rolling shuttering for all color multiple sensor pixel image sensors of the array. The apparatus includes a row control circuit and a column clamp, sample, and hold circuit. The row control circuit generates the necessary reset control signals, transfer gating signals, and row selecting signals for providing the global shuttering and the rolling shuttering color multiple sensor pixel image sensors. The column clamp, sample and hold circuit generates an output signal representative of a number of photons impinging upon each color multiple sensor pixel image sensor of the row of selected color multiple sensor pixel image sensors. The control apparatus further includes an analog to digital converter which converts the read out signal to a digital image signal.
摘要翻译：一种设备控制彩色多传感器像素图像传感器阵列的操作，以为彩色多传感器像素图像传感器的一半提供全局快门，以及用于阵列的所有彩色多传感器像素图像传感器的滚动快门。该装置包括行控制电路和列钳，采样保持电路。行控制电路产生必要的复位控制信号，传送选通信号和行选择信号，以提供全局快门和滚动快门彩色多传感器像素图像传感器。列夹，采样和保持电路产生表示入射到所选择的彩色多传感器像素图像传感器行中的每个彩色多传感器像素图像传感器的光子数量的输出信号。控制装置还包括将读出的信号转换为数字图像信号的模数转换器。

18. 发明申请

US20120002874A1 APPARATUS AND METHOD FOR SHIFT INVARIANT DIFFERENTIAL (SID) IMAGE DATA INTERPOLATION IN FULLY POPULATED SHIFT INVARIANT MATRIX 有权
标题翻译：用于在完全人口转移不变矩阵中移位不确定差异（SID）图像数据插值的装置和方法
公开(公告)号：US20120002874A1
公开(公告)日：2012-01-05
申请号：US13231897
申请日：2011-09-13
申请人： Taner Dosluoglu
发明人： Taner Dosluoglu
IPC分类号： G06K9/00
CPC分类号： G06T3/4015 , H04N9/045
摘要： An image processing system for interpolating image data is comprised of a shift invariant point determining device, an illumination averager, a second order differentiator, and color data calculator. The shift invariant point determining device ascertains shift invariant points within the mosaic color element array pattern. The illumination averager determines average illumination values of clusters of a plurality of pixels. The second order differentiator determines a second order derivative of the average illumination values of the clusters of the plurality of pixels. The color data calculator determines color data for each of the plurality of pixels from the image data and second order derivative. A second order derivative scaler multiplies the second order derivative by a scaling factor for selectively smoothing and sharpening the second order derivative. A color data averager averages color data values of adjacent pixels to a resolution of the image data.
摘要翻译：用于内插图像数据的图像处理系统包括移位不变点确定装置，照明平均器，二阶微分器和彩色数据计算器。移位不变点确定装置确定马赛克色彩元素阵列图案内的移位不变点。照明平均器确定多个像素的簇的平均照明值。第二阶微分器确定多个像素的簇的平均照明值的二阶导数。颜色数据计算器根据图像数据和二阶导数确定多个像素中的每一个的颜色数据。二阶导数定标器将二阶导数乘以缩放因子，以选择性地平滑和锐化二阶导数。颜色数据平均器将相邻像素的颜色数据值平均为图像数据的分辨率。

19. 发明申请

US20090042331A1 Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor 有权
标题翻译：针对快照操作CMOS传感器具有高快门抑制比的固定光电二极管（PPD）像素
公开(公告)号：US20090042331A1
公开(公告)日：2009-02-12
申请号：US12229749
申请日：2008-08-26
申请人： Taner Dosluoglu , Guang Yang
发明人： Taner Dosluoglu , Guang Yang
IPC分类号： H01L31/18
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14689
摘要： A method for forming a pixel image sensor that has a high shutter rejection ratio for preventing substrate charge leakage and prevents generation of photoelectrons within a floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.
摘要翻译：一种形成像素图像传感器的方法，该像素图像传感器具有高的遮光率以防止基板电荷泄漏并且防止浮动扩散存储节点内的光电子产生和像素图像传感器的存储节点控制晶体管开关。像素图像传感器，其防止来自与像素图像传感器相邻的像素图像传感器的光电子的基板电荷泄漏。像素图像传感器被制造在具有隔离屏障和载流子传导阱的衬底上。形成在浮动扩散存储节点下面的隔离屏障允许通过排出杂散载流子并防止它们到达浮动扩散存储节点而进行有效的隔离。与深N阱隔离屏障结合的载流子传导将被钉扎的光电二极管区域与浮动扩散存储节点下方的深N阱隔离屏障分开。

20. 发明授权

US07479995B2 On chip real time FPN correction without imager size memory 有权
标题翻译：片上实时FPN校正，无需成像器大小记忆
公开(公告)号：US07479995B2
公开(公告)日：2009-01-20
申请号：US11132769
申请日：2005-05-19
申请人： Taner Dosluoglu
发明人： Taner Dosluoglu
IPC分类号： H04N5/217 , H04N9/64
CPC分类号： H04N5/3658 , H04N5/3575
摘要： A circuit and method for correcting pixel output signals for fixed pattern noise. Pixels in a selected row of pixels are read after an integration period and the resulting signals are stored in a first sample and hold circuit for each column. The pixels in the selected row are then reset and immediately read again and the resulting signals are stored in a second sample and hold circuit for each column. The signals in the second sample and hold circuits are subtracted from the signals in the first sample and hold circuits to produce signals related to the light seen by the pixels in the selected row corrected for fixed pattern noise. The output of the first sample and hold circuits and second sample and hold circuits can be connected to a subtraction unit and sequentially activated so that a single subtraction unit is required for the entire imager. The output of the subtraction unit can connected to a buffer thereby storing signals corrected for fixed pattern noise in the buffer using only a single subtraction unit and avoiding the need for a large memory to store dark pixel signals.
摘要翻译：用于校正固定图案噪声的像素输出信号的电路和方法。在积分周期之后读取所选行像素中的像素，并将所得到的信号存储在每列的第一采样和保持电路中。然后，所选行中的像素被复位，并立即再次读取，并且将所得到的信号存储在每列的第二采样和保持电路中。从第一采样和保持电路中的信号中减去第二采样和保持电路中的信号，以产生与针对固定模式噪声校正的所选行中的像素所见的光相关的信号。第一采样保持电路和第二采样和保持电路的输出可以连接到减法单元并被顺序地激活，使整个成像器需要单个减法单元。减法单元的输出可以连接到缓冲器，从而仅使用单个减法单元将针对固定模式噪声校正的信号存储在缓冲器中，并避免需要大量存储器来存储暗像素信号。

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