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11. 发明申请

US20110093215A1 Reactive Gas Detection In Complex Backgrounds 有权
标题翻译：复杂背景下的活性气体检测
公开(公告)号：US20110093215A1
公开(公告)日：2011-04-21
申请号：US12911666
申请日：2010-10-25
申请人： Xin Zhou , Xiang Liu , Alfred Feitisch , Gregory M. Sanger
发明人： Xin Zhou , Xiang Liu , Alfred Feitisch , Gregory M. Sanger
IPC分类号： G06F19/00 , G01N21/25
CPC分类号： G01N21/3504 , G01N2021/3545 , G01N2021/399 , G01N2201/1215
摘要： A differential absorption spectrum for a reactive gas in a gas mixture can be generated for sample absorption data by subtracting background absorption data set from the sample absorption data. The background absorption data can be characteristic of absorption characteristics of the background composition in a laser light scan range that includes a target wavelength. The differential absorption spectrum can be converted to a measured concentration of the reactive gas using calibration data. A determination can be made whether the background composition has substantially changed relative to the background absorption data, and new background absorption data can be used if the background composition has substantially changed. Related systems, apparatus, methods, and/or articles are also described.
摘要翻译：可以通过从样品吸收数据中减去设置的背景吸收数据，为样品吸收数据产生气体混合物中的反应气体的差分吸收光谱。背景吸收数据可以是包括目标波长的激光扫描范围中背景组合物的吸收特性的特征。使用校准数据可以将差示吸收光谱转换为测量的反应气体浓度。可以确定背景组合物是否相对于背景吸收数据基本上改变，并且如果背景组合物已经基本上改变，则可以使用新的背景吸收数据。还描述了相关系统，装置，方法和/或制品。

12. 发明申请

US20100169027A1 Analytical Equipment Enclosure Incorporating Phase Changing Materials 有权
标题翻译：分析设备外壳并入相变材料
公开(公告)号：US20100169027A1
公开(公告)日：2010-07-01
申请号：US12347368
申请日：2008-12-31
申请人： Xuejiao Hu , Alfred Feitisch
发明人： Xuejiao Hu , Alfred Feitisch
IPC分类号： G01N21/59 , G01K11/30
CPC分类号： G01N21/39 , G01N2201/022 , G01N2201/023 , G01N2201/0231
摘要： Thermally controlled enclosures that can be used with gas analyzers are described. The enclosures incorporate one or more phase changing materials that buffer ambient and internal heat loads to reduce the power consumption demand of mechanical or electronic heating apparatus. Maintenance of gas analyzer equipment at a consistent temperature can be important to achieving stable and reproducible results. Related systems, apparatus, methods, and/or articles are also described.
摘要翻译：描述了可用于气体分析仪的热控制外壳。外壳采用缓冲环境和内部热负荷的一种或多种相变材料，以减少机械或电子加热设备的功耗需求。在一致的温度下维护气体分析仪设备对于获得稳定和可重现的结果是重要的。还描述了相关系统，装置，方法和/或制品。

13. 发明授权

US07586094B2 Background compensation by multiple-peak measurements for absorption spectroscopy-based gas sensing 有权
标题翻译：基于吸收光谱法的气体感测的多峰测量的背景补偿
公开(公告)号：US07586094B2
公开(公告)日：2009-09-08
申请号：US11929525
申请日：2007-10-30
申请人： Xiang Liu , Xin Zhou , Alfred Feitisch , Gregory M. Sanger
发明人： Xiang Liu , Xin Zhou , Alfred Feitisch , Gregory M. Sanger
IPC分类号： G01J5/02
CPC分类号： G01N21/3504 , G01N21/274 , G01N21/314 , G01N21/39 , G01N2201/1215
摘要： Concentrations of a target analyte in a gas mixture containing one or more background analytes having potentially interfering spectral absorption features can be calculated by compensating for background analyte absorption at a target wavelength used to quantify the target analyte. Absorption can be measured at a reference wavelength chosen to quantify the concentration of the background analyte. Using a background gas adjustment factor or function, the absorption measured at the reference wavelength can be used to calculate absorption due to the background analyte at the target wavelength and thereby compensate for this background absorption to more accurately calculate the target analyte concentration in real or near real time. Additional background analytes can optionally be compensated for by using one or more additional reference wavelengths.
摘要翻译：含有具有潜在干扰光谱吸收特征的一种或多种背景分析物的气体混合物中的目标分析物的浓度可以通过补偿用于量化目标分析物的目标波长的背景分析物吸收来计算。可以在选择的参考波长处测量吸光度，以量化背景分析物的浓度。使用背景气体调节因子或功能，可以使用在参考波长处测量的吸收来计算由于目标波长的背景分析物引起的吸收，从而补偿该背景吸收，以更精确地计算实际或近似的目标分析物浓度即时的。可以通过使用一个或多个另外的参考波长来可选地补偿附加的背景分析物。

14. 发明授权

US09166364B2 Semiconductor laser mounting with intact diffusion barrier layer 有权
标题翻译：具有完整扩散阻挡层的半导体激光器安装
公开(公告)号：US09166364B2
公开(公告)日：2015-10-20
申请号：US13212085
申请日：2011-08-17
申请人： Alfred Feitisch , Gabi Neubauer , Mathias Schrempel
发明人： Alfred Feitisch , Gabi Neubauer , Mathias Schrempel
IPC分类号： H01S3/04 , H01S5/022 , H01L23/00 , H01S5/042
CPC分类号： H01S5/02272 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/0383 , H01L2224/04026 , H01L2224/05573 , H01L2224/05624 , H01L2224/05663 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/0567 , H01L2224/0568 , H01L2224/05681 , H01L2224/05684 , H01L2224/05686 , H01L2224/29109 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/32245 , H01L2224/83801 , H01L2924/12042 , H01L2924/15747 , H01S5/02212 , H01S5/0425 , H01L2924/04941 , H01L2924/01022 , H01L2924/053 , H01L2924/049 , H01L2924/00014 , H01L2924/01032 , H01L2924/01014 , H01L2924/014 , H01L2924/0105 , H01L2924/01029 , H01L2924/01082 , H01L2924/00
摘要： A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
摘要翻译：可以将半导体激光器芯片的第一接触表面形成为选择为具有基本上小于阻挡层厚度的最大峰谷高度的目标表面粗糙度。包含非金属导电性化合物并且具有阻挡层厚度的阻挡层可以施加到第一接触表面，并且可以使用焊料将半导体激光器芯片焊接到沿着第一接触表面安装的载体上通过将焊料组合物加热到低于阻挡层溶入焊料组合物的阈值温度的组合物。还描述了相关系统，方法，制品等。

15. 发明授权

US08953165B2 Validation and correction of spectrometer performance using a validation cell 有权
标题翻译：使用验证单元验证和校正光谱仪性能
公开(公告)号：US08953165B2
公开(公告)日：2015-02-10
申请号：US13027000
申请日：2011-02-14
申请人： Alfred Feitisch , Lutz Keller , Xiang Liu , Mathias Schrempel , Keith Benjamin Helbley
发明人： Alfred Feitisch , Lutz Keller , Xiang Liu , Mathias Schrempel , Keith Benjamin Helbley
IPC分类号： G01N21/27 , G01J3/28 , G01J3/42 , G01N21/03 , G01N21/31 , G01N21/3504 , G01N21/3518 , G01N21/39
CPC分类号： G01J3/28 , G01J3/42 , G01N21/031 , G01N21/274 , G01N21/31 , G01N21/3504 , G01N21/3518 , G01N21/39 , G01N2021/399
摘要： Light intensity data quantifying intensity of light generated by a light source and received at a detector during a validation mode of an absorption spectrometer can be compared with a stored data set representing at least one previous measurement in a validation mode of an analytical system. The validation mode can include causing the light to pass at least once through each of a zero gas and a reference gas contained within a validation cell and including a known amount of a target analyte. The zero gas can have at least one of known and negligible first light absorbance characteristics within a range of wavelengths produced by the light source. A validation failure can be determined to have occurred if the first light intensity data and the stored data set are out of agreement by more than a predefined threshold amount. Related systems, methods, and articles of manufacture are also described.
摘要翻译：在吸收光谱仪的验证模式期间，由光源产生并在检测器处接收的光的光强度数据的量化可以与在分析系统的验证模式中表示至少一个先前测量的存储的数据集进行比较。验证模式可以包括使光通过至少一次通过包含在验证单元内的零气体和参考气体中的每一个，并且包括已知量的目标分析物。零气体可以具有由光源产生的波长范围内的已知和可忽略的第一光吸收特性中的至少一种。如果第一光强度数据和存储的数据集超出预定义的阈值量，则可以确定已经发生验证失败。还描述了相关系统，方法和制品。

16. 发明申请

US20140112363A1 SOLDERLESS MOUNTING FOR SEMICONDUCTOR LASERS 有权
标题翻译：半导体激光器的无焊接安装
公开(公告)号：US20140112363A1
公开(公告)日：2014-04-24
申请号：US13659019
申请日：2012-10-24
申请人： Alfred Feitisch , Gabi Neubauer , Mathias Schrempel
发明人： Alfred Feitisch , Gabi Neubauer , Mathias Schrempel
IPC分类号： H01L33/62
CPC分类号： H01L24/83 , B23K20/023 , B23K20/24 , B23K2101/42 , H01L33/62 , H01L2224/73265 , H01L2224/83201 , H01L2224/8385 , H01L2924/12042 , H01S5/02212 , H01S5/02256 , H01S5/0226 , H01S5/02264 , H01S5/02476 , H01S5/0425
摘要： A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.
摘要翻译：可以将半导体激光器芯片的第一接触表面形成为第一目标表面粗糙度，并且可以将载体安装的第二接触表面形成为第二目标表面粗糙度。包含第一金属的第一粘合制备层可以任选地施加到所形成的第一接触表面，并且包括第二金属的第二接合制备层可任选地施加到形成的第二接触表面。第一接触表面可以与第二接触表面接触，并且无焊接固定工艺可以将半导体激光器芯片固定到载体安装。还描述了相关系统，方法，制品等。

17. 发明申请

US20130044322A1 SEMICONDUCTOR LASER MOUNTING WITH INTACT DIFFUSION BARRIER LAYER 有权
标题翻译：半导体激光器安装与INTIF扩散障碍层
公开(公告)号：US20130044322A1
公开(公告)日：2013-02-21
申请号：US13212085
申请日：2011-08-17
申请人： Alfred Feitisch , Gabi Neubauer , Mathias Schrempel
发明人： Alfred Feitisch , Gabi Neubauer , Mathias Schrempel
IPC分类号： G01N21/59 , H01S5/022 , H01L21/60
CPC分类号： H01S5/02272 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/0383 , H01L2224/04026 , H01L2224/05573 , H01L2224/05624 , H01L2224/05663 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/0567 , H01L2224/0568 , H01L2224/05681 , H01L2224/05684 , H01L2224/05686 , H01L2224/29109 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/32245 , H01L2224/83801 , H01L2924/12042 , H01L2924/15747 , H01S5/02212 , H01S5/0425 , H01L2924/04941 , H01L2924/01022 , H01L2924/053 , H01L2924/049 , H01L2924/00014 , H01L2924/01032 , H01L2924/01014 , H01L2924/014 , H01L2924/0105 , H01L2924/01029 , H01L2924/01082 , H01L2924/00
摘要： A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
摘要翻译：可以将半导体激光器芯片的第一接触表面形成为选择为具有基本上小于阻挡层厚度的最大峰谷高度的目标表面粗糙度。包含非金属导电性化合物并且具有阻挡层厚度的阻挡层可以施加到第一接触表面，并且可以使用焊料将半导体激光器芯片焊接到沿着第一接触表面安装的载体上通过将焊料组合物加热到低于阻挡层溶入焊料组合物的阈值温度的组合物。还描述了相关系统，方法，制品等。

18. 发明申请

US20120236893A1 Semiconductor Laser Mounting for Improved Frequency Stability 有权
标题翻译：用于提高频率稳定性的半导体激光器安装
公开(公告)号：US20120236893A1
公开(公告)日：2012-09-20
申请号：US13212075
申请日：2011-08-17
申请人： Gabi Neubauer , Alfred Feitisch , Mathias Schrempel
发明人： Gabi Neubauer , Alfred Feitisch , Mathias Schrempel
IPC分类号： H01S5/026 , H01L33/48
CPC分类号： H01S5/02272 , G01N21/39 , G01N21/718 , G01N2021/399 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/32501 , H01L2224/48091 , H01L2224/4823 , H01L2224/73265 , H01L2224/83065 , H01L2224/83075 , H01L2224/83801 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01061 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/15747 , H01L2924/19107 , H01S5/02212 , H01S5/0425 , H01L2924/01007 , H01L2924/01001 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
摘要翻译：可以将半导体激光器芯片的第一接触表面形成为被选择为具有基本上小于施加到第一接触表面的金属阻挡层的阻挡层厚度的最大峰谷高度的目标表面粗糙度。可以将具有阻挡层厚度的金属阻挡层施加到第一接触表面，并且可以使用焊料组合物将半导体激光器芯片焊接到沿着第一接触表面安装的载体上，通过将焊接组合物加热到小于阈值温度发生金属阻挡层溶入焊料组合物的过程。还描述了相关系统，方法，制品等。

19. 发明申请

US20120099109A1 DYNAMIC RECONSTRUCTION OF A CALIBRATION STATE OF AN ABSORPTION SPECTROMETER 有权
标题翻译：吸收光谱仪校准状态的动态重建
公开(公告)号：US20120099109A1
公开(公告)日：2012-04-26
申请号：US13235105
申请日：2011-09-16
申请人： Xiang Liu , John Lewison , Wenhai Ji , Alfred Feitisch
发明人： Xiang Liu , John Lewison , Wenhai Ji , Alfred Feitisch
IPC分类号： G01N21/00
CPC分类号： G01J3/28 , G01J3/42 , G01N21/031 , G01N21/274 , G01N21/31 , G01N21/3504 , G01N21/3518 , G01N21/39 , G01N2021/399
摘要： A reference harmonic absorption curve of a laser absorption spectrometer, which can include a tunable or scannable laser light source and a detector, can have a reference curve shape and can include a first, second, or higher order harmonic signal of a reference signal generated by the detector in response to light passing from the laser light source through a reference gas or gas mixture. The reference gas or gas mixture can include one or more of a target analyte and a background gas expected to be present during analysis of the target analyte. The reference harmonic absorption curve can have been determined for the laser absorption spectrometer in a known or calibrated state. A test harmonic absorption curve having a test curve shape is compared with the reference harmonic absorption curve to detect a difference between the test curve shape and the reference curve shape that exceeds a predefined allowed deviation and therefore indicates a change in an output of the laser light source relative to the known or calibrated state. One or more operating and/or analytical parameters of the laser absorption spectrometer are adjusted to correct the test curve shape to reduce the difference between the test curve shape and the reference curve shape.
摘要翻译：可以包括可调谐或可扫描的激光光源和检测器的激光吸收光谱仪的参考谐波吸收曲线可以具有参考曲线形状，并且可以包括由第一，第二或更高次谐波信号产生的参考信号检测器响应于从激光源通过参考气体或气体混合物的光。参考气体或气体混合物可以包括目标分析物和预期在目标分析物的分析期间存在的背景气体中的一种或多种。参考谐波吸收曲线可以在已知或校准状态下为激光吸收光谱仪确定。将具有测试曲线形状的测试谐波吸收曲线与参考谐波吸收曲线进行比较，以检测超过预定义的允许偏差的测试曲线形状和参考曲线形状之间的差异，因此表示激光输出的变化源相对于已知或校准状态。调整激光吸收光谱仪的一个或多个操作和/或分析参数以校正测试曲线形状，以减小测试曲线形状与参考曲线形状之间的差异。

20. 发明授权

US07829046B2 Scrubber for reactive gases 有权
标题翻译：反应气体的洗涤器
公开(公告)号：US07829046B2
公开(公告)日：2010-11-09
申请号：US12202098
申请日：2008-08-29
申请人： Marc M. Baum , John Moss , Xin Zhou , Alex Kwan , Alfred Feitisch , Xiang Liu
发明人： Marc M. Baum , John Moss , Xin Zhou , Alex Kwan , Alfred Feitisch , Xiang Liu
IPC分类号： B01D47/00 , B01J38/12
CPC分类号： B01D53/685 , B01D53/42 , B01D53/52 , B01D53/58 , B01D2251/512 , B01D2251/602 , B01D2251/606 , B01D2259/40
摘要： Scrubber media for reactive gases, that can include but are not necessarily limited to hydrogen chloride (HCl), hydrogen sulfide (H2S), hydrogen fluoride (HF), and ammonia (NH3), can include reactive particles, potentially as small as nano-scale, that can optionally be suspended on macro-scale carrier particles. Reactive gases can be converted to non-volatile compounds by being passed through a bed of such scrubber media. Such scrubber media can be used to remove reactive gases from gas mixtures. Potential applications include differential absorption spectroscopy, air pollutant emission controls, and the like. Methods of preparing scrubber media are also described.
摘要翻译：可以包括但不限于氯化氢（HCl），硫化氢（H 2 S），氟化氢（HF）和氨（NH 3））的反应性气体的洗涤介质可以包括可能小至纳米级的反应性颗粒，可以任选地悬浮在大规模载体颗粒上。反应性气体可以通过穿过这种洗涤介质的床而转化为不挥发性化合物。这种洗涤介质可用于从气体混合物中除去反应性气体。潜在应用包括差示吸收光谱，空气污染物排放控制等。还描述了制备洗涤介质的方法。

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