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    • 14. 发明申请
    • METHOD AND SYSTEM FOR DETERMINING NODE TO BE MATERIALIZED
    • 用于确定要素材的节点的方法和系统
    • US20110106843A1
    • 2011-05-05
    • US12913570
    • 2010-10-27
    • Yue PanXing Zhi SunLin Hao Xu
    • Yue PanXing Zhi SunLin Hao Xu
    • G06F17/30
    • G06F17/30457
    • A dependency graph of rule predicates without strongly connected sub-graph is obtained. The dependency graph indicates the dependency among the rule predicates. An update frequency of node in the dependency graph is calculated, and a query frequency of node in the dependency graph is also calculated. Furthermore, a runtime query cost value and a materialization cost value of the node are calculated based on the query frequency and update frequency. Node to be materialized are determined based on the runtime query cost value and the materialization cost value. A rule predicate corresponding to the node to be materialized is the rule predicate to be materialized. In at least some instances, an exemplary technical effect is that the return time of result of runtime query is saved and the affect by the data update is reduced when a query is performed in relation data reasoning system constructed with rule predicates.
    • 获得没有强连接子图的规则谓词的依赖图。 依赖图表示规则谓词之间的依赖关系。 计算依赖图中节点的更新频率,并计算依赖图中节点的查询频率。 此外,基于查询频率和更新频率来计算节点的运行时查询成本值和实现成本值。 基于运行时查询成本值和实现成本值确定要实现的节点。 与要实现的节点相对应的规则谓词是要实现的规则谓词。 在至少一些情况下,示例性的技术效果是,当在关系数据推理系统构造的规则谓词中执行查询时,保存运行时查询的结果的返回时间,并且减少数据更新的影响。
    • 15. 发明授权
    • Path-based ranking of unvisited web pages
    • 基于路径的未访问网页排名
    • US07424484B2
    • 2008-09-09
    • US10358941
    • 2003-02-05
    • Xiaochuan MaYue PanHui Su
    • Xiaochuan MaYue PanHui Su
    • G06F17/30
    • G06F17/30864Y10S707/99933Y10S707/99936Y10S707/99943
    • Path-based ranking of unvisited Web pages for WWW crawling is provided, via identifying all the paths beginning with a “seed” URL and leading to visited relevant web pages as “good-path set”, and for each unvisited web page, identifying the paths beginning from the “seed” URL leading to it as “partial-path set”; classifying all the visited web pages and labeling each web Page with the labels of a class or classes it belongs to; training a statistic model for generalizing the common patterns among all ones of “good-path set”; and evaluating the “partial-path set” with the statistic model and ranking the unvisited web pages with the evaluation results.
    • 通过识别从“种子”URL开始的所有路径,并将访问过的相关网页导向为“良好路径集”,并为每个未访问的网页标识,以提供用于WWW抓取的未访问网页的基于路径的排名 从“种子”URL开始的路径导致它作为“部分路径集”; 对所有访问的网页进行分类,并使用所属类别的标签将每个网页标注; 培养统一模式,推广“好路径”的共同模式; 并用统计模型评估“部分路径集”,并通过评估结果对未访问的网页进行排序。
    • 18. 发明授权
    • Resistive memory with small electrode and method for fabricating the same
    • 具有小电极的电阻记忆及其制造方法
    • US09142768B2
    • 2015-09-22
    • US13698799
    • 2012-05-02
    • Yimao CaiJun MaoRu HuangShenghu TanYinglong HuangYue Pan
    • Yimao CaiJun MaoRu HuangShenghu TanYinglong HuangYue Pan
    • H01L45/00
    • H01L45/1253H01L45/04H01L45/122H01L45/1233H01L45/1273H01L45/146H01L45/1608H01L45/1616H01L45/1625
    • Systems and methods are disclosed involving a resistive memory with a small electrode, relating to the field of semiconductor resistive memory in ULSI. An illustrative resistive memory may include an Al electrode layer, a SiO2 layer, a Si layer, a resistive material layer and a lower electrode layer in sequence, wherein the Al electrode layer and the resistive material layer are electrically connected through one or more conductive channel and the conductive channel is formed by penetrating Al material into the Si layer via defects in the SiO2 layer and dissolving Si material into the Al material. Methods may include forming a lower electrode layer, a resistive layer, a Si layer and a SiO2 layer over a substrate; fabricating a Al electrode layer over the SiO2 layer; and performing an anneal process to the resultant structure. Consistent with innovations herein, a small electrode may be obtained via a conventional process.
    • 公开了涉及具有与ULSI中的半导体电阻性存储器的领域相关的具有小电极的电阻性存储器的系统和方法。 示例性电阻存储器可以依次包括Al电极层,SiO 2层,Si层,电阻材料层和下电极层,其中Al电极层和电阻材料层通过一个或多个导电沟道电连接 并且通过SiO 2层中的缺陷将Al材料穿过Si层而将Si材料溶解到Al材料中而形成导电通道。 方法可以包括在衬底上形成下电极层,电阻层,Si层和SiO 2层; 在SiO 2层上制造Al电极层; 对所得到的结构进行退火处理。 与本文的创新一致,可以通过常规方法获得小电极。