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1. 发明授权

US09059142B2 Semiconductor device having vertical gates and fabrication thereof 有权
标题翻译：具有垂直栅极的半导体器件及其制造
公开(公告)号：US09059142B2
公开(公告)日：2015-06-16
申请号：US13555640
申请日：2012-07-23
申请人： Wen-Ping Liang , Chiang-Hung Lin , Kuo-Hui Su
发明人： Wen-Ping Liang , Chiang-Hung Lin , Kuo-Hui Su
IPC分类号： H01L29/66 , H01L21/336 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/51
CPC分类号： H01L29/4236 , H01L29/4966 , H01L29/517 , H01L29/66621 , H01L29/78
摘要： A method for forming a semiconductor device with a vertical gate is disclosed, including providing a substrate, forming a recess in the substrate, forming a gate dielectric layer on a sidewall and a bottom of the recess, forming an adhesion layer in the recess and on the gate dielectric layer, wherein the adhesion layer is a metal silicide nitride layer, and forming a gate layer in the recess and on the adhesion layer.
摘要翻译：公开了一种用于形成具有垂直栅极的半导体器件的方法，包括提供衬底，在衬底中形成凹槽，在凹槽的侧壁和底部上形成栅极电介质层，在凹部中形成粘附层，所述栅介电层，其中所述粘附层是金属硅化物氮化物层，并且在所述凹部中和所述粘合层上形成栅极层。

2. 发明授权

US09058383B2 Document processing method and system 有权
标题翻译：文件处理方法和系统
公开(公告)号：US09058383B2
公开(公告)日：2015-06-16
申请号：US13608438
申请日：2012-09-10
申请人： Sheng Hua Bao , Jie Cui , Hui Su , Zhong Su , Li Zhang
发明人： Sheng Hua Bao , Jie Cui , Hui Su , Zhong Su , Li Zhang
IPC分类号： G06F7/00 , G06F17/30
CPC分类号： G06F17/30716 , G06F17/30011
摘要： A method and system for filtering a candidate document in a candidate document set are provided. The method includes receiving one or more entity word—topic word pairs and identifying one or more entity words of the candidate document and topic words. The method also includes determining whether to add the candidate document into a filtered document set using the entity words and topic words in the given entity word—topic word pairs and the identified entity words and topic words in the candidate document. The method further includes adding the candidate document into a filtered document set in response to determining that the candidate document should be added into the filtered document set.
摘要翻译：提供了一种用于过滤候选文档集中候选文档的方法和系统。该方法包括接收一个或多个实体字主题词对并识别候选文档和主题词的一个或多个实体单词。该方法还包括使用给定实体字主题词对中的实体单词和主题词以及候选文档中所识别的实体单词和主题词来确定是否将候选文档添加到过滤文档集中。该方法还包括响应于确定候选文档应该被添加到经过滤的文档集中而将候选文档添加到经过过滤的文档集中。

3. 发明授权

US08760986B2 Read channel throughput management 有权
标题翻译：读取通道吞吐量管理
公开(公告)号：US08760986B2
公开(公告)日：2014-06-24
申请号：US13408849
申请日：2012-02-29
申请人： Prafulla Bollampalli Reddy , Hui Su , Michelle Elaine Blankenship , Eddie Wai Pun , John Marc Wright , Ara Patapoutian , Hieu V Nguyen
发明人： Prafulla Bollampalli Reddy , Hui Su , Michelle Elaine Blankenship , Eddie Wai Pun , John Marc Wright , Ara Patapoutian , Hieu V Nguyen
IPC分类号： G11B11/00
CPC分类号： G11B20/1217 , G11B5/09 , G11B20/10527 , G11B20/1833 , G11B2020/10759 , G11B2020/10916 , G11B2020/1232 , G11B2020/1295 , G11B2020/185
摘要： An implementation of a system disclosed herein provides a method of deferring decoding of a data sector received at a read channel of a storage device, in response to determining that a data sector cannot be decoded by a first decoder and storing the data sector for further processing by a second decoder.
摘要翻译：响应于确定数据扇区不能由第一解码器解码并存储数据扇区用于进一步处理的方法，本文公开的系统的实现提供了一种在存储设备的读取信道上推迟对数据扇区进行解码的方法通过第二解码器。

4. 发明申请

US20130328202A1 THROUGH-SILICON VIA AND FABRICATION METHOD THEREOF 有权
标题翻译：通过硅和其制造方法
公开(公告)号：US20130328202A1
公开(公告)日：2013-12-12
申请号：US13490472
申请日：2012-06-07
申请人： Chi-Wen Huang , Kuo-Hui Su
发明人： Chi-Wen Huang , Kuo-Hui Su
IPC分类号： H01L23/522
CPC分类号： H01L23/481 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： A through silicon via (TSV) structure including a semiconductor substrate; a first inter-metal dielectric (IMD) layer on the semiconductor substrate; a cap layer overlying the IMD layer; a conductive layer extending through the cap layer, the first IMD layer and into the semiconductor substrate; a tungsten film capping a top surface of the conductive layer; a second IMD layer overlying the cap layer and covering the tungsten film; and an interconnect feature in the second IMD layer.
摘要翻译：一种包括半导体衬底的硅通孔（TSV）结构; 半导体衬底上的第一金属间介电层（IMD）层; 覆盖IMD层的覆盖层; 延伸穿过盖层，第一IMD层并进入半导体衬底的导电层; 覆盖导电层的顶表面的钨膜; 覆盖覆盖层并覆盖钨膜的第二IMD层; 以及第二IMD层中的互连特征。

5. 发明授权

US08536056B2 Method of forming conductive pattern 有权
标题翻译：形成导电图案的方法
公开(公告)号：US08536056B2
公开(公告)日：2013-09-17
申请号：US13214244
申请日：2011-08-22
申请人： Kuo-Hui Su , Yi-Nan Chen , Hsien-Wen Liu
发明人： Kuo-Hui Su , Yi-Nan Chen , Hsien-Wen Liu
IPC分类号： H01L21/28
CPC分类号： H01L21/321 , H01L21/76856 , H01L21/76861 , H01L21/76876 , H01L21/76885
摘要： A method of forming conductive pattern is provided. A seeding layer is formed on an underlayer. By using an energy ray, an irradiation treatment is performed on a portion of a surface of the seeding layer. The seeding layer thus includes a plurality of irradiated regions and a plurality of unirradiated regions. A conversion treatment is performed on the irradiated regions of the seeding layer. A selective growth process is performed, so as to form a conductive pattern on each unirradiated region of the seeding layer. The irradiated regions of the seeding layer are removed, so that the conductive patterns are insulated from each other.
摘要翻译：提供形成导电图案的方法。在底层上形成接种层。通过使用能量射线，对接种层的表面的一部分进行照射处理。因此，接种层包括多个照射区域和多个未照射区域。对接种层的照射区域进行转化处理。进行选择性生长处理，以在接种层的每个未照射区域上形成导电图案。去除接种层的照射区域，使得导电图案彼此绝缘。

6. 发明申请

US20130207276A1 NOVEL PROCESS FOR FORMING A BIG VIA 有权
标题翻译：形成大威胁的新工艺
公开(公告)号：US20130207276A1
公开(公告)日：2013-08-15
申请号：US13397488
申请日：2012-02-15
申请人： Uway Tseng , Shu-Hui Su
发明人： Uway Tseng , Shu-Hui Su
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L24/05 , H01L21/76801 , H01L21/76816 , H01L21/76837 , H01L21/7684 , H01L21/76877 , H01L2224/02166 , H01L2224/04042 , H01L2224/45124 , H01L2224/45147 , H01L2224/48463 , H01L2924/01015 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2924/00014
摘要： The present disclosure provides a semiconductor device. The semiconductor device includes a first metal layer component formed over a substrate. The semiconductor device includes a via formed over the first metal layer component. The via has a recessed shape. The semiconductor device includes a second metal layer component formed over the via. The semiconductor device includes a first dielectric layer component formed over the substrate. The first dielectric layer component is located adjacent to, and partially over, the first metal layer component. The first dielectric layer component contains fluorine. The semiconductor device includes a second dielectric layer component formed over the first dielectric layer component. The first dielectric layer component and the second dielectric layer component are each located adjacent to the via. The second dielectric layer component is free of fluorine.
摘要翻译：本发明提供一种半导体器件。半导体器件包括形成在衬底上的第一金属层部件。半导体器件包括形成在第一金属层部件上的通孔。通孔具有凹陷形状。半导体器件包括在通孔上形成的第二金属层元件。半导体器件包括形成在衬底上的第一介电层组件。第一介电层组件位于第一金属层组件附近并部分地位于第一金属层组件上。第一介电层组分含氟。半导体器件包括形成在第一介电层部件上的第二介电层部件。第一电介质层组分和第二介电层组分各自位于与通孔相邻的位置。第二介电层组分不含氟。

7. 发明授权

US08410535B2 Capacitor and manufacturing method thereof 有权
标题翻译：电容器及其制造方法
公开(公告)号：US08410535B2
公开(公告)日：2013-04-02
申请号：US13093840
申请日：2011-04-25
申请人： Kuo-Hui Su , Yi-Nan Chen , Hsien-Wen Liu
发明人： Kuo-Hui Su , Yi-Nan Chen , Hsien-Wen Liu
IPC分类号： H01L27/108 , H01L29/76 , H01L21/8242
CPC分类号： H01L28/75
摘要： A capacitor and a manufacturing method thereof are provided. The capacitor includes a first electrode, a first metal layer, a dielectric layer and a second electrode. The first electrode is disposed on a substrate. The first metal layer is disposed on the first electrode. The dielectric layer is disposed on the first metal layer, wherein the material of the first metal layer does not react with the material of the dielectric layer. The second electrode is disposed on the dielectric layer.
摘要翻译：提供电容器及其制造方法。电容器包括第一电极，第一金属层，电介质层和第二电极。第一电极设置在基板上。第一金属层设置在第一电极上。电介质层设置在第一金属层上，其中第一金属层的材料不与电介质层的材料反应。第二电极设置在电介质层上。

8. 外观设计

USD657323S1 LCD television receiver 有权
标题翻译：液晶电视接收机
公开(公告)号：USD657323S1
公开(公告)日：2012-04-10
申请号：US29353558
申请日：2010-01-11
申请人： Yeon Jin Kim , Kyong Tae Han , Hui Su Yang
设计人： Yeon Jin Kim , Kyong Tae Han , Hui Su Yang

9. 发明授权

US07998414B2 System for high throughput GPCR functional assay 失效
标题翻译：高通量GPCR功能测定系统
公开(公告)号：US07998414B2
公开(公告)日：2011-08-16
申请号：US11893506
申请日：2007-08-16
申请人： Eric J. Mozdy , Hui Su , Qi Wu
发明人： Eric J. Mozdy , Hui Su , Qi Wu
IPC分类号： G01N21/64
CPC分类号： C40B60/12 , C40B30/10
摘要： A functional assay detection system for membrane bound proteins. The system comprises a biological array including a porous substrate having a plurality of membranes adhered thereto and a first side and a second side, a fluorescent labeling reagent configured to couple to the membrane bound proteins, a pulsed light assembly configured to excite the fluorescent labeling reagent, and a time-delayed imaging device configured to capture emitted fluorescence of the fluorescent labeling reagent. The pulsed light assembly is configured to excite the fluorescent labeling reagent from at least one of the first side and the second side of the porous substrate, and the fluorescent labeling reagent comprises a fluorophore that has an emission lifetime that is in the range of microseconds.
摘要翻译：膜结合蛋白的功能测定检测系统。该系统包括生物阵列，其包括多孔基底，其具有附着于其上的多个膜，第一侧和第二侧，构造成耦合到膜结合蛋白的荧光标记试剂;脉冲光组件，其被配置为激发荧光标记试剂以及被配置为捕获荧光标记试剂的发射荧光的时间延迟成像装置。脉冲光组件被配置为从多孔基底的第一侧和第二侧中的至少一个激发荧光标记试剂，并且荧光标记试剂包含具有在微秒范围内的发光寿命的荧光团。

10. 发明授权

US07962496B2 Migrating personality of computing environment from source platform to target platform 失效
标题翻译：将计算环境的个性从源平台迁移到目标平台
公开(公告)号：US07962496B2
公开(公告)日：2011-06-14
申请号：US11188371
申请日：2005-07-25
申请人： Guang Dao Gu , Hui Su , Zhe Peng Wang , Xiao Bing Guo
发明人： Guang Dao Gu , Hui Su , Zhe Peng Wang , Xiao Bing Guo
IPC分类号： G06F7/00 , G06F17/30
CPC分类号： H04L41/0846 , H04L41/0233 , H04L67/303
摘要： Methods, and systems for migrating personality of a computing environment from a source machine platform to a target machine platform through a CIM-based system management infrastructure. A system includes: database wherein migration rules of CIM objects between a plurality of platforms are recorded; and migration tool for implementing migration according to the migration rules in the database, which includes: migration rule extractor, CIM object extractor, migration task producer and migration task executor. The extractor extracts CIM objects related to personality of the computing environment from source machine platform according to migration rule extracted from the database by rule extractor, and extracts from the target machine platform objects corresponding to the extracted CIM objects of the source machine platform. The migration task producer generates the migration tasks according to extracted migration rules. The migration task executor executes generated migration tasks on the CIM objects of the target platform.
摘要翻译：通过基于CIM的系统管理基础设施，将计算环境的个性从源计算机平台迁移到目标计算机平台的方法和系统。系统包括：数据库，其中记录多个平台之间的CIM对象的迁移规则; 以及根据数据库迁移规则实现迁移的迁移工具，其中包括：迁移规则提取器，CIM对象提取器，迁移任务生成器和迁移任务执行器。提取器根据规则提取器从数据库提取的迁移规则，从源机平台提取与计算环境个性相关的CIM对象，并从目标机平台提取与源机平台提取的CIM对象相对应的对象。迁移任务生成器根据提取的迁移规则生成迁移任务。迁移任务执行程序在目标平台的CIM对象上执行生成的迁移任务。

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