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    • 11. 发明授权
    • Infrared light sensor having a high signal voltage and a high signal/noise ratio
    • 红外光传感器具有高信号电压和高信噪比
    • US08963087B2
    • 2015-02-24
    • US13264908
    • 2010-04-16
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • G01J5/34G01J5/08
    • G01J5/34G01J5/08G01J5/0846
    • An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements (11).
    • 一种用于红外光检测器(1)的红外光传感器,包括基板膜部分(2)和至少两个传感器芯片(7至10),它们在基板膜部分(2)上彼此紧固并且每个 包括由热敏材料制成并与基底电极(12)和头部电极(13)电接触的层元件(11),并且被布置成使得在每个情况下在头部电极之间存在电压差 (11)被红外线照射时,各层元件(11)的基极(13)和基极(12) 和连接线(14〜16),用于两个相邻布置的传感器芯片(7至10),耦合线将一个传感器芯片(7至9)的头部电极(13)和基极(12) )以使得传感器芯片(7至10)的层元件(11)连接在串联电路中,该串联电路具有一个基极电极 (17)和其另一端的头电极(18)中的一个,串联电路的总电压差可以抽头作为层元件(11)的各个电压差之和, 。
    • 13. 发明申请
    • INFRARED LIGHT SENSOR HAVING A HIGH SIGNAL VOLTAGE AND A HIGH SIGNAL/NOISE RATIO
    • 具有高信号电压和高信号/噪声比的红外光传感器
    • US20120132807A1
    • 2012-05-31
    • US13264908
    • 2010-04-16
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • G01J5/10
    • G01J5/34G01J5/08G01J5/0846
    • An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements (11).
    • 一种用于红外光检测器(1)的红外光传感器,包括基板膜部分(2)和至少两个传感器芯片(7至10),它们在基板膜部分(2)上彼此紧固并且每个 包括由热敏材料制成并与基底电极(12)和头部电极(13)电接触的层元件(11),并且被布置成使得在每个情况下在头部电极之间存在电压差 (11)被红外线照射时,各层元件(11)的基极(13)和基极(12) 和连接线(14〜16),用于两个相邻布置的传感器芯片(7至10),耦合线将一个传感器芯片(7至9)的头部电极(13)和基极(12) )以使得传感器芯片(7至10)的层元件(11)连接在串联电路中,该串联电路具有一个基极电极 (17)和其另一端的头电极(18)中的一个,串联电路的总电压差可以抽头作为层元件(11)的各个电压差之和, 。
    • 14. 发明授权
    • Infrared light detector and production thereof
    • 红外光检测器及其生产
    • US08637823B2
    • 2014-01-28
    • US13125527
    • 2009-09-29
    • Carsten Giebeler
    • Carsten Giebeler
    • G01J5/02
    • G01J5/0014G01J5/04G01J5/045G01J5/08G01J5/0803G01J5/0846G01J5/0862G01J5/10
    • An infrared light detector has a first substrate having a sensor chip thereon that has an exposure surface that can be irradiated with infrared light, the sensor chip converting the incident infrared light into an electrical signal. The infrared light detector also has a second substrate having a window therein that is located adjacent to the exposure surface of the sensor chip, the window masking infrared light of a predetermined wavelength. The size (dimensions) of the window and the distance of the window with respect to the exposure surface are dimensioned to cause infrared light passing through the window to completely strike the exposure area of the sensor chip.
    • 红外光检测器具有第一基板,其上具有可以被红外光照射的曝光表面的传感器芯片,传感器芯片将入射的红外光转换成电信号。 红外光检测器还具有其中具有窗口的第二基板,其位于与传感器芯片的曝光表面相邻的位置,掩模具有预定波长的红外光。 窗口的尺寸(尺寸)和窗口相对于曝光表面的距离的尺寸被设计成使得穿过窗口的红外光完全地撞击传感器芯片的曝光区域。