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11. 发明授权

US06924997B2 Ferroelectric memory and method of operating same 有权
标题翻译：铁电存储器和操作方法相同
公开(公告)号：US06924997B2
公开(公告)日：2005-08-02
申请号：US10381235
申请日：2001-09-25
申请人： Zheng Chen , Vikram Joshi , Myoungho Lim , Carlos A. Paz de Araujo , Larry D. McMillan , Yoshihisa Kato , Tatsuo Otsuki , Yasuhiro Shimada
发明人： Zheng Chen , Vikram Joshi , Myoungho Lim , Carlos A. Paz de Araujo , Larry D. McMillan , Yoshihisa Kato , Tatsuo Otsuki , Yasuhiro Shimada
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric memory 636 includes a group of memory cells (645, 12, 201, 301, 401, 501), each cell having a ferroelectric memory element (44, 218, etc.), a drive line (122, 322, 422, 522 etc.) on which a voltage for writing information to the group of memory cells is placed, a bit line (25, 49, 125, 325, 425, 525, etc.) on which information to be read out of the group of memory cells is placed, a preamplifier (20, 42, 120, 320, 420, etc.) between the memory cells and the bit line, a set switch (14, 114, 314, 414, 514, etc.) connected between the drive line and the memory cells, and a reset switch (16, 116, 316, 416, 516, etc.) connected to the memory cells in parallel with the preamplifier. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.
摘要翻译：铁电存储器636包括一组存储单元（645,12,21,301,401,501），每个单元具有铁电存储元件（44,218等），驱动线（122,322,422， 522等），在其上放置用于将信息写入到存储器单元组的电压，位线（25,49,125,325,425,525等），其中要从该组存储器单元读出的信息放置存储器单元，在存储器单元和位线之间的前置放大器（20,42,120,320,420等），连接在存储器单元之间的设定开关（14,114,314,414,514等）驱动线和存储器单元，以及与前置放大器并联连接到存储器单元的复位开关（16,116,316,416,516等）。通过将小于铁电存储元件的矫顽电压的电压放置在存储元件上来读取存储器。在读取之前，通过使铁电存储元件的两个电极接地来放电来自该组电池的噪声。

12. 发明授权

US06830623B2 Method of liquid deposition by selection of liquid viscosity and other precursor properties 失效
标题翻译：通过选择液体粘度和其他前体性质进行液体沉积的方法
公开(公告)号：US06830623B2
公开(公告)日：2004-12-14
申请号：US10096893
申请日：2002-03-12
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B65G100
CPC分类号： C23C18/1216 , C23C18/1291 , C23C18/14 , H01L21/02197 , H01L21/02282 , H01L21/02348 , H01L21/31691
摘要： A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.
摘要翻译：将多个液体，每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。通过调节体积流量控制器来调节前体液体的物理性质，使得当将前体施加到基底并进行处理时，所得到的固体材料薄膜具有平滑和平坦的表面。通常物理性质是前体的粘度，其被选择为相对较低，在1-2厘泊的范围内。

13. 发明授权

US06781184B2 Barrier layers for protecting metal oxides from hydrogen degradation 有权
标题翻译：用于保护金属氧化物免受氢降解的阻挡层
公开(公告)号：US06781184B2
公开(公告)日：2004-08-24
申请号：US09998469
申请日：2001-11-29
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.
摘要翻译：集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到诸如铁电层状超晶格材料的金属氧化物的薄膜。氢扩散阻挡层包括以下化合物中的至少一种：钽酸锶，钽酸铋，氧化钽，氧化钛，氧化锆和氧化铝。氢阻挡层是无定形的，并且在450℃或更低的温度下通过MOCVD工艺制成。在与所述氢扩散阻挡层相邻的地方形成包括选自氮化硅和所述氢阻挡层材料之一的结晶形式的材料的补充氢阻挡层。

14. 发明授权

US06511718B1 Method and apparatus for fabrication of thin films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制造薄膜的方法和装置
公开(公告)号：US06511718B1
公开(公告)日：2003-01-28
申请号：US09446226
申请日：1999-12-17
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
IPC分类号： H05H124
CPC分类号： C23C16/45565 , B05D1/007 , B05D1/04 , C23C16/40 , C23C16/448 , C23C16/45561 , C23C18/12 , H01L21/31691 , H01L28/55
摘要： A venturi mist generator creates a mist comprising droplets having a mean diameter less than one micron from liquid precursors containing multi-metal polyalkoxide compounds. The mist is mixed and then passed into a gasifier where the mist droplets are gasified at a temperature of between 100° C. and 250° C., which is lower than the temperature at which the precursor compounds decompose. The gasified precursor compounds are transported by carrier gas through insulated tubing at ambient temperature to prevent both condensation and premature decomposition. The gasified precursors are mixed with oxidant gas, and the gaseous reactant mixture is injected through a showerhead inlet into a deposition reactor in which a substrate is heated at a temperature of from 300° C. to 600 ° C. The gasified precursors decompose at the substrate and form a thin film of solid material on the substrate. The thin film is treated at elevated temperatures of from 500° C. to 900° C. to form polycrystalline metal oxide material, in particular, ferroelectric layered superlattice material.
摘要翻译：文丘里雾发生器产生包含具有小于1微米的平均直径的液滴的雾，所述液体前体含有多金属聚烷氧化物。将雾混合，然后进入气化器，在气化器中雾滴在100℃和250℃之间的温度下气化，该温度低于前体化合物分解的温度。气化的前体化合物通过载气在环境温度下通过绝缘管输送，以防止冷凝和过早分解。将气化的前体与氧化剂气体混合，并将气态反应物混合物通过喷头入口注入沉积反应器中，在沉积反应器中将基底在300℃至600℃的温度下加热。气化的前体在衬底并在衬底上形成固体材料的薄膜。该薄膜在500℃至900℃的高温下进行处理以形成多晶金属氧化物材料，特别是铁电层状超晶格材料。

15. 发明授权

US06448190B1 Method and apparatus for fabrication of integrated circuit by selective deposition of precursor liquid 有权
标题翻译：通过选择性沉积前体液体制造集成电路的方法和装置
公开(公告)号：US06448190B1
公开(公告)日：2002-09-10
申请号：US09316917
申请日：1999-05-21
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L21/316 , H01L21/3144 , H01L2924/0002 , H01L2924/00
摘要： A thin film of solid material is selectively formed during fabrication of an integrated circuit by applying a liquid precursor to a substrate having a first surface and a second surface and treating the liquid precursor. The first surface has different physical properties than the second surface such that a solid thin film forms on the first surface but does not form on the second surface. The substrate is washed after formation of said solid thin film to remove any residues of said liquid from the second substrate surface.
摘要翻译：通过将液体前体施加到具有第一表面和第二表面的基底并处理液体前体，在制造集成电路期间选择性地形成固体材料薄膜。第一表面具有与第二表面不同的物理性质，使得在第一表面上形成固体薄膜，但不形成在第二表面上。在形成所述固体薄膜之后洗涤底物以从第二基材表面除去所述液体的任何残余物。

16. 发明授权

US06370056B1 Ferroelectric memory and method of operating same 失效
标题翻译：铁电存储器和操作方法相同
公开(公告)号：US06370056B1
公开(公告)日：2002-04-09
申请号：US09523492
申请日：2000-03-10
申请人： Zheng Chen , Vikram Joshi , Myoungho Lim , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Zheng Chen , Vikram Joshi , Myoungho Lim , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： A ferroelectric non-volatile memory comprising: a plurality of memory cells, each containing an FeFET and a MOSFET, each of said FeFETs having a source, a drain, a substrate, and a gate, and each MOSFET having a pair of source/drains and a gate. The cells are arranged in an array comprising a plurality of rows and a plurality of columns. A gate line and a bit line are associated with each column, and a word line, a drain line, and a substrate line are associated with each row. One source/drain of each MOSFET is connected to its corresponding gate line; the other source/drain is connected to the gate of the FeFET in the cell. The gate of the MOSFET is connected to its corresponding word line which provides a write and erase enable signal. The drain of the FeFET is connected to its corresponding drain line, and the source of the FeFET is connected to its corresponding bit line. The substrate of each FeFET is connected to its corresponding substrate line. A read MOSFET is connected between a drain input and the drain line associated with each row. The gate of the read MOSFET is connected to an input for the read enable signal.
摘要翻译：一种铁电非易失性存储器，包括：多个存储单元，每个存储单元包含FeFET和MOSFET，每个所述FeFET具有源极，漏极，衬底和栅极，并且每个MOSFET具有一对源极/漏极和一个门。单元被布置成包括多行和多列的阵列。栅极线和位线与每列相关联，并且字线，漏极线和衬底线与每一行相关联。每个MOSFET的一个源极/漏极连接到其对应的栅极线; 另一个源极/漏极连接到电池中的FeFET的栅极。 MOSFET的栅极连接到提供写和擦除使能信号的相应字线。 FeFET的漏极连接到其对应的漏极线，并且FeFET的源极连接到其对应的位线。每个FeFET的衬底连接到其相应的衬底线。读取MOSFET连接在与每行相关联的漏极输入和漏极线之间。读取MOSFET的栅极连接到读使能信号的输入端。

17. 发明授权

US5942376A Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films 失效
标题翻译：稳定的液态金属芳基酮醇化物溶液及其在薄膜光致化图案化中的应用
公开(公告)号：US5942376A
公开(公告)日：1999-08-24
申请号：US911098
申请日：1997-08-14
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C09D5/00 , G03F7/004 , G03F7/038 , H01L21/027 , B05D3/06
CPC分类号： G03F7/0042 , Y10S505/734
摘要： Solution films of a photosensitive metal arylketone alcoholate are micro-patterned by exposure to ultraviolet radiation under a mask. The resultant patterns are developed in an apolar solvent and annealed to provide thin film metal oxides for use in integrated circuits.
摘要翻译：光敏金属芳基酮醇化物的溶液膜通过在掩模下暴露于紫外线辐射而被微图案化。所得图案在非极性溶剂中显影并退火以提供用于集成电路的薄膜金属氧化物。

18. 发明授权

US5932295A Method and apparatus for misted liquid source deposition of thin films with increased yield 失效
标题翻译：用于雾化液体源沉积薄膜的方法和装置，其产率增加
公开(公告)号：US5932295A
公开(公告)日：1999-08-03
申请号：US963083
申请日：1997-11-03
申请人： Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/314 , B05D1/00 , B05D1/04 , C23C16/40 , H01L21/316 , H01L21/8242 , H01L27/108 , B05D7/24 , B05D3/02 , B05D5/12 , C23C16/00
CPC分类号： C23C18/14 , B05D1/007 , B05D1/04 , C23C16/45561 , C23C18/1216 , H01L21/31691
摘要： A mist generator produces a mist from a liquid precursor. The mist is charged and accelerated by a pair of charged electrodes in an acceleration chamber. The mist passes through a conduit charged to the same polarity of the mist particles, to a deposition chamber where they are deposited on a substrate having the opposite polarity as the particles. Infrared lamps heat the mist particles in the acceleration chamber to a temperature below the temperature at which the compounds and solvent in the liquid precursor decompose. In one embodiment the deposition chamber is tubular and a plurality of substrates are held within the chamber in a position substantially perpendicular to the direction of mist flow in the chamber. A heater and an electrical field generator in the tube add sufficient energy to the mist as it passes through the tube to provide uniform deposition of the mist on the plurality of substrates.
摘要翻译：雾发生器从液体前体产生雾。雾通过加速室中的一对充电电极进行充电和加速。雾气通过与雾颗粒相同极性的导管进入淀积室，在沉积室中沉积在具有与颗粒相反的极性的基底上。红外灯将加速室中的雾粒加热到低于液体前体中的化合物和溶剂分解的温度的温度。在一个实施例中，沉积室是管状的，并且多个基板被保持在室内大致垂直于室中雾流方向的位置。管中的加热器和电场发生器在雾通过管时向雾中增加足够的能量以提供雾在多个基板上的均匀沉积。

19. 发明授权

US5540772A Misted deposition apparatus for fabricating an integrated circuit 失效
标题翻译：用于制造集成电路的雾化沉积装置
公开(公告)号：US5540772A
公开(公告)日：1996-07-30
申请号：US320218
申请日：1994-10-11
申请人： Larry D. McMillan , Carlos A. Paz de Araujo , Tommy L. Roberts
发明人： Larry D. McMillan , Carlos A. Paz de Araujo , Tommy L. Roberts
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , C23C14/00
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/409 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/1295 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H05K3/105 , Y10S427/101
摘要： A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps of forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.
摘要翻译：公开了用于形成集成电路中使用的化学化合物的薄膜的方法和装置。该方法包括以下步骤：在溶剂中形成包含化合物的前体液体，在真空沉积室内提供基底，产生前体液体的雾，并将雾流入沉积室，同时将室保持在室温至在衬底上沉积一层前体液体。将液体干燥以在基板上形成固体材料的薄膜，然后完成集成电路以将集成电路的部件中的固体材料膜的至少一部分包括在内。

20. 发明授权

US5519234A Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current 失效
标题翻译：铁电介质存储单元可以至少切换千兆周期，并具有低疲劳 - 具有高介电常数和低漏电流
公开(公告)号：US5519234A
公开(公告)日：1996-05-21
申请号：US154927
申请日：1993-11-18
申请人： Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Michael C. Scott , Larry D. McMillan
发明人： Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Michael C. Scott , Larry D. McMillan
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L29/12 , H01L29/94 , H01L31/113
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C26/02 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： An integrated circuit includes a layered superlattice material having the formula A1.sub.w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+ak B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.
摘要翻译：集成电路包括具有公式A1w1 + a1A2w2 + a2的分层超晶格材料。。。 Ajwj + ajS1x1 + s1S2x2 + s2。。。 Skxk + ak B1y1 + b1B2y2 + b2。。。 Blyl + blQz-2，其中A1，A2。。。 Aj表示钙钛矿结构中的A位元素，S1，S2。。。 Sk代表超晶格发生器元件B1，B2。。。 B1表示钙钛矿结构中的B位元素，Q表示阴离子，上标表示各元素的化合价，下标表示单位元素中元素的原子数，并且至少w1和y1为非零。这些材料中的一些是非常低的疲劳铁电体，并且被应用在非易失性存储器中。其他的是高介电常数材料，它们在长期使用中不会降解或击穿，并且被应用在易失性存储器中。

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