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11. 发明授权

US08138577B2 Pulse-laser bonding method for through-silicon-via based stacking of electronic components 有权
标题翻译：脉冲激光焊接方法，用于电子元件的基于硅通孔的堆叠
公开(公告)号：US08138577B2
公开(公告)日：2012-03-20
申请号：US12057241
申请日：2008-03-27
申请人： Xunqing Shi , Wei Ma , Bin Xie , Chang Hwa Chung
发明人： Xunqing Shi , Wei Ma , Bin Xie , Chang Hwa Chung
IPC分类号： H01L23/538 , H01L21/44
CPC分类号： H01L21/76898 , H01L21/6835 , H01L24/13 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2221/68359 , H01L2224/0401 , H01L2224/05166 , H01L2224/05171 , H01L2224/0557 , H01L2224/056 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2224/16 , H01L2224/274 , H01L2224/29101 , H01L2224/2919 , H01L2224/8182 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/351 , H01L2924/00 , H01L2224/05552 , H01L2924/00014 , H01L2924/013
摘要： There is described a method of forming a through-silicon-via to form an interconnect between two stacked semiconductor components using pulsed laser energy. A hole is formed in each component, and each hole is filled with a plug formed of a first metal. One component is then stacked on another component such that the holes are in alignment, and a pulse of laser energy is applied to form a bond between the metal plugs.
摘要翻译：描述了形成穿硅通孔以形成使用脉冲激光能量的两个堆叠的半导体部件之间的互连的方法。在每个部件中形成孔，并且每个孔填充有由第一金属形成的塞子。然后将一个部件堆叠在另一部件上，使得孔对准，并且施加激光能量的脉冲以在金属插塞之间形成结合。

12. 发明授权

US06727381B2 Process for producing vitamin A ester 有权
标题翻译：生产维生素A酯的方法
公开(公告)号：US06727381B2
公开(公告)日：2004-04-27
申请号：US10039056
申请日：2002-01-03
申请人： Runpu Shen , Shiqing Pi , Bin Xie , Hongjun Huang
发明人： Runpu Shen , Shiqing Pi , Bin Xie , Hongjun Huang
IPC分类号： C07C6702
CPC分类号： C07C403/12 , C07C2601/16 , C07F9/4018
摘要： The invention relates to a process for producing all trans-vitamin A ester (I). According to the present invention, vitamin A ester (I) can simply be synthesized in good yields and high purity by the reaction of phosphonate compound (IV) with aldehyde (II) in an organic solvent in the presence of a base.
摘要翻译：本发明涉及一种生产全部维生素A酯（I）的方法。根据本发明，通过膦酸酯化合物（IV）与醛（II）在有机溶剂中在碱的存在下的反应，可以简单地以高产率和高纯度合成维生素A酯（I）。

13. 发明授权

US08754507B2 Forming through-silicon-vias for multi-wafer integrated circuits 有权
标题翻译：形成多晶硅集成电路的硅通孔
公开(公告)号：US08754507B2
公开(公告)日：2014-06-17
申请号：US13008845
申请日：2011-01-18
申请人： Bin Xie , Pui Chung Simon Law , Yat Kit Tsui
发明人： Bin Xie , Pui Chung Simon Law , Yat Kit Tsui
IPC分类号： H01L29/40
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/24 , H01L24/80 , H01L24/82 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/0345 , H01L2224/05558 , H01L2224/05666 , H01L2224/08145 , H01L2224/24145 , H01L2224/73217 , H01L2224/80896 , H01L2224/82101 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2225/06551 , H01L2924/01029 , H01L2924/10253 , H01L2924/14 , H01L2224/03 , H01L2924/01074 , H01L2224/80 , H01L2224/82 , H01L2924/00
摘要： The present invention provides a method for forming a three-dimensional wafer stack having a single metallized stack via with a variable cross-sectional shape. The method uses at least first and silicon wafers. Each wafer has one or more integrated circuits formed thereon. One or more through-vias are formed in each silicon wafer followed by oxide formation on at least an upper and lower surface of the silicon wafer. The wafers are aligned such that each wafer through via is aligned with a corresponding through via in adjacent stacked wafers. Wafers are bonded to form a three-dimensional wafer stack having one or more stack vias formed from the alignment of individual wafer vias. Via metallization is performed by depositing a seed layer in each of the stack vias followed by copper electroplating to form a continuous and homogeneous metallization path through the three-dimensional wafer stack.
摘要翻译：本发明提供一种用于形成具有可变横截面形状的具有单个金属化叠层通孔的三维晶片叠层的方法。该方法至少使用第一和第二硅片。每个晶片具有形成在其上的一个或多个集成电路。在每个硅晶片中形成一个或多个通孔，随后在硅晶片的至少上表面和下表面上形成氧化物。将晶片对准，使得通过通孔的每个晶片与相邻堆叠的晶片中的相应通孔对准。晶片被结合以形成具有由单个晶片通孔的对准形成的一个或多个堆叠通孔的三维晶片堆叠。通过金属化通过在每个堆叠通孔中沉积种子层，然后进行铜电镀来形成通过三维晶片堆叠的连续且均匀的金属化路径来进行。

14. 发明授权

US08733266B2 Integrative deep draft floating production platform with unconditional stability and offshore installation method thereof 有权
标题翻译：一体化深层浮选生产平台，具有无条件稳定性和海上安装方式
公开(公告)号：US08733266B2
公开(公告)日：2014-05-27
申请号：US13702302
申请日：2010-12-02
申请人： Bin Xie , Wenhui Xie , Hengyi Zeng , Wei Zhang , Junrong Wang , Zhe Jiang
发明人： Bin Xie , Wenhui Xie , Hengyi Zeng , Wei Zhang , Junrong Wang , Zhe Jiang
IPC分类号： B63B35/44
CPC分类号： B63B35/4413 , B63B1/107 , B63B39/005 , B63B2001/128 , B63B2001/145 , B63B2039/067 , Y10T29/49826
摘要： An integrative deep draft floating production platform with unconditional stability and an offshore installation method thereof are disclosed. The platform comprises an ring ballast tank at the bottom, some columns with small cross sections, an ring buoyancy tank at the middle part, some columns with large cross sections, and an upper drilling equipment and oil gas processing module. The ballast tank adopts a permanently fixed ballast, and the tank is internally filled with weights to ensure that the center of buoyancy of the platform is higher than the center of gravity. The drilling equipment and oil gas processing module is installed in the construction site, and the platform is transported to the installation site by a dry tow or wet tow as a whole and then is installed. The platform can be applied to deepwater oil and gas exploitation under harsh marine environment.
摘要翻译：公开了一种具有无条件稳定性的综合深层浮选生产平台及其海上安装方法。该平台包括底部的环形压载舱，一些截面小的柱，中部有一个环形浮力罐，一些具有大截面的柱，以及一个上钻井设备和油气处理模块。压载舱采用永久固定的镇流器，内部填充有重物，以确保平台的浮力中心高于重心。钻井设备和油气处理模块安装在施工现场，平台通过干丝或湿拖带整体运输到安装地点，然后安装。该平台可应用于严酷的海洋环境下的深层油气开采。

15. 发明授权

US08544165B2 Apparatus for aligning electronic components 有权
标题翻译：用于对准电子部件的装置
公开(公告)号：US08544165B2
公开(公告)日：2013-10-01
申请号：US12748997
申请日：2010-03-29
申请人： Chi Kuen Vincent Leung , Bin Xie , Xunqing Shi
发明人： Chi Kuen Vincent Leung , Bin Xie , Xunqing Shi
IPC分类号： B23P19/00
CPC分类号： H01L21/67333 , H01L25/105 , H01L25/50 , H01L2224/16145 , H01L2224/16146 , H01L2225/1058 , Y10T29/49133 , Y10T29/53174 , Y10T29/53178 , Y10T29/53183
摘要： A method of aligning electronic components comprising providing a positioning member 110 having at least one formation 120 for receiving an electronic component; said at least one formation having lateral boundaries 35, 36 for constraining movement of an electronic component; placing a first electronic component 10a in said at least one formation; and providing a force for actively aligning said first electronic component with a lateral boundary of said at least one formation. The force may, for example, be provided by tilting the positioning member, by providing suction or by using an actuator. An apparatus for aligning electronic components and a 3D system of stacked electronic components is also disclosed.
摘要翻译：一种对准电子部件的方法，包括提供具有至少一个结构120的定位部件110，用于接收电子部件; 所述至少一个结构具有用于限制电子部件的运动的横向边界35,36; 将第一电子部件10a放置在所述至少一个结构中; 并且提供用于使所述第一电子部件与所述至少一个结构的横向边界主动对准的力。例如，可以通过倾斜定位构件，通过提供抽吸或通过使用致动器来提供力。还公开了一种用于对准电子部件的装置和堆叠的电子部件的3D系统。

16. 发明申请

US20130180851A1 MAGNETIC FIELD GENERATOR, MAGNETRON CATHODE AND SPATTERING APPARATUS 有权
标题翻译：磁场发生器，MAGNETRON CATHODE和散热装置
公开(公告)号：US20130180851A1
公开(公告)日：2013-07-18
申请号：US13698884
申请日：2011-08-30
申请人： Wei Kong , Zijing Lin , Ming Li , Bin Xie , Haiqian Wang , Yousong Jiang , Ekishu Nagae
发明人： Wei Kong , Zijing Lin , Ming Li , Bin Xie , Haiqian Wang , Yousong Jiang , Ekishu Nagae
IPC分类号： C23C14/35 , H01J25/50 , H01F7/08
CPC分类号： C23C14/351 , C23C14/35 , H01F7/081 , H01J25/50 , H01J37/3405 , H01J37/3452 , H01J37/3461
摘要： A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind.
摘要翻译：布置在目标之后并且用于基于磁力线在目标的前表面上产生磁场的磁场发生器可以包括一个环形外磁体，其具有平行方向（X方向）的极轴，相对于设置在外磁体的内侧并具有与外磁性体的磁极轴方向平行（X方向）的极轴的中心磁体的目标表面的磁轭，用于从后面支撑外磁体和中心磁体，以及用于改变靶的前表面的磁场分布的磁导透板。磁导透镜板被布置成从后面被轭板支撑。

17. 发明申请

US20130092069A1 INTEGRALLY EQUIPPED HEAVY DRAUGHT FLOATING TYPE OIL PRODUCTION PLATFORM WITH UNCONDITIONAL STABILITY AND OFFSHORE INSTALLATION METHOD THEREOF 有权
标题翻译：具有无条件稳定性的浮选式油生产平台的整体设备及其海上安装方法
公开(公告)号：US20130092069A1
公开(公告)日：2013-04-18
申请号：US13702302
申请日：2010-12-02
申请人： Bin Xie , Wenhui Xie , Hengyi Zeng , Wei Zhang , Junrong Wang , Zhe Jiang
发明人： Bin Xie , Wenhui Xie , Hengyi Zeng , Wei Zhang , Junrong Wang , Zhe Jiang
IPC分类号： B63B35/44
CPC分类号： B63B35/4413 , B63B1/107 , B63B39/005 , B63B2001/128 , B63B2001/145 , B63B2039/067 , Y10T29/49826
摘要： An integrative deep draft floating production platform with unconditional stability and an offshore installation method thereof are disclosed. The platform comprises an ring ballast tank (1) at the bottom, some columns with small cross sections (2), an ring buoyancy tank (3) at the middle part, some columns with large cross sections (4), and an upper drilling rig and oil gas processing module (5). The ballast tank adopts a permanently fixed ballast, and the tank is internally filled with weights to ensure that the center of buoyancy of the platform is higher than the center of gravity. The columns with large and small cross sections are uniformly arranged on the buoyancy tank and the ballast tank respectively, and the lower parts thereof are respectively integrated with the buoyancy tank and the ballast tank. Each column with a large cross section is provided with a central pore canal (7) axially, a lower part in the central pore canal is provided with a chopping board connection structure (8) with a groove. After the construction is completed, the columns with small cross sections are inserted into and pass through the central pore canals of the columns with large cross sections correspondingly, and the platform is in a folded state. Each column with a large cross section is provided with a group of mooring lines (15). The drilling rig and oil gas processing module is installed in the construction site, and the platform is transported to the installation site by a dry tow or wet tow as a whole and then is installed. The platform can be applied to deepwater oil and gas exploitation under harsh marine environment.
摘要翻译：公开了一种具有无条件稳定性的综合深层浮选生产平台及其海上安装方法。该平台包括底部的环形压载舱（1），一些具有小截面的柱（2），中部有一个环形浮力槽（3），一些具有大截面的柱（4）钻机和油气处理模块（5）。压载舱采用永久固定的镇流器，内部填充有重物，以确保平台的浮力中心高于重心。具有大小截面的柱体分别均匀地布置在浮力罐和压载舱上，其下部分别与浮力罐和压载舱一体化。具有大截面的每个柱轴向设置有中心孔道（7），中心孔道中的下部设置有具有凹槽的砧板连接结构（8）。施工完成后，将具有小截面的柱插入并通过相应的横截面较大的塔的中心孔道，平台处于折叠状态。具有大横截面的每列具有一组系泊线（15）。钻机和油气处理模块安装在施工现场，平台通过干丝或湿丝整体运输到安装地点，然后安装。该平台可应用于严酷的海洋环境下的深层油气开采。

18. 发明申请

US20100244195A1 HOST SUBSTRATE FOR NITRIDE BASED LIGHT EMITTING DEVICES 审中-公开
标题翻译：用于基于氮化物的发光装置的主体基板
公开(公告)号：US20100244195A1
公开(公告)日：2010-09-30
申请号：US12412702
申请日：2009-03-27
申请人： Limin Lin , Bin Xie , Shu Yuan
发明人： Limin Lin , Bin Xie , Shu Yuan
IPC分类号： H01L29/20 , H01L21/302
CPC分类号： H01L33/0079
摘要： A host substrate and method of making a host substrate for nitride based thin-film semiconductor devices are provided. According to one embodiment, the method includes the steps of providing a silicon layer; etching a pattern of holes in the silicon layer; plating the silicon layer with copper to fill the holes etched in the silicon layer; bonding the silicon layer to a gallium nitride (GaN) layer, the GaN layer attached to a sapphire substrate; and removing the sapphire substrate. The host substrate is configured to address the coefficient of thermal expansion (CTE) mismatch problem and reduce the amount of stress resulting from such CTE mismatch. A combination of metal and semiconductor materials provide for the desired thermal and electrical conductivity while providing for subsequent dicing and incorporation of the finished semiconductor devices into other circuits.
摘要翻译：提供了一种主衬底和制造用于氮化物基薄膜半导体器件的主衬底的方法。根据一个实施例，该方法包括提供硅层的步骤; 蚀刻硅层中的孔的图案; 用铜电镀硅层以填充蚀刻在硅层中的孔; 将所述硅层与氮化镓（GaN）层接合，所述GaN层附着在蓝宝石衬底上; 并去除蓝宝石衬底。主机基板被配置为解决热膨胀系数（CTE）失配问题，并减少由这种CTE失配引起的应力的量。金属和半导体材料的组合提供期望的热导电性和导电性，同时提供随后的切割和将成品半导体器件并入其它电路中。

19. 发明申请

US20100123241A1 SEMICONDUCTOR CHIP WITH THROUGH-SILICON-VIA AND SIDEWALL PAD 有权
标题翻译：半导体芯片，通过硅和透明片
公开(公告)号：US20100123241A1
公开(公告)日：2010-05-20
申请号：US12273434
申请日：2008-11-18
申请人： Xunqing Shi , Bin Xie , Chang Hwa Chung
发明人： Xunqing Shi , Bin Xie , Chang Hwa Chung
IPC分类号： H01L23/04 , H01L21/00
CPC分类号： H01L23/16 , H01L21/76898 , H01L23/3128 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05009 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06551 , H01L2225/06579 , H01L2924/00014 , H01L2924/1433 , H01L2224/05599 , H01L2224/05099 , H01L2224/0555 , H01L2224/0556
摘要： Subject matter disclosed herein may relate to packaging for multi-chip semiconductor devices as may be used, for example, in flash memory devices. In an example embodiment, a semiconductor chip may comprise a through-silicon via and a sidewall pad.
摘要翻译：本文公开的主题可涉及可用于例如闪存设备中的多芯片半导体器件的封装。在示例性实施例中，半导体芯片可以包括穿硅通孔和侧壁衬垫。

20. 发明授权

US07879438B2 Substrate warpage-reducing structure 有权
标题翻译：基体翘曲缩小结构
公开(公告)号：US07879438B2
公开(公告)日：2011-02-01
申请号：US12412114
申请日：2009-03-26
申请人： Jyh-Rong Lin , Bin Xie , Yeung Yeung , Xunqing Shi , Chang Hwa Chung
发明人： Jyh-Rong Lin , Bin Xie , Yeung Yeung , Xunqing Shi , Chang Hwa Chung
IPC分类号： B32B9/00
CPC分类号： C04B35/62218 , C04B41/009 , C04B41/4574 , C04B41/81 , C04B2111/00844 , C04B2235/9638 , H05K1/0271 , H05K1/0306 , H05K2201/068 , H05K2201/09136 , H05K2201/09909 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926 , Y10T428/252 , C04B41/4539 , C04B41/53 , C04B35/00
摘要： The subject matter disclosed herein relates to methods to reduce warpage of a substrate.
摘要翻译：本文公开的主题涉及减少基底翘曲的方法。

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