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11. 发明授权

US09890230B2 Tetracyanoanthraquinodimethane polymers and use thereof 有权
公开(公告)号：US09890230B2
公开(公告)日：2018-02-13
申请号：US15123071
申请日：2015-03-06
申请人： Bernhard Haeupler , Ulrich Schubert , Andreas Wild
发明人： Bernhard Haeupler , Ulrich Schubert , Andreas Wild
IPC分类号： C09D125/18 , H01M4/60 , H01M10/0525 , C08F112/32 , C08G61/12 , C08G65/22 , C07C50/20
CPC分类号： C08F112/32 , C08G61/08 , C08G2261/418 , C09D125/18 , H01M4/137 , H01M4/1399 , H01M4/602 , H01M4/606 , H01M10/052 , H01M10/0525
摘要： Novel tetracyanoanthraquinodimethane polymers and use thereof. The problem addressed was that of providing novel polymers which are preparable with a low level of complexity, with the possibility of controlled influence on the physicochemical properties thereof within wide limits in the course of synthesis, and which are usable as active media in electrical charge storage elements for high storage capacity, long lifetime and stable charging/discharging plateaus. Tetracyanoanthraquinodimethane polymers consisting of an oligomeric or polymeric compound of the general formula I have been found.

12. 发明申请

US20120126413A1 METHOD OF SEALING AN AIR GAP IN A LAYER OF A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE 有权
标题翻译：在半导体结构和半导体结构层中密封空气隙的方法
公开(公告)号：US20120126413A1
公开(公告)日：2012-05-24
申请号：US13300953
申请日：2011-11-21
申请人： Greg Braeckelmann , Marius Orlowski , Andreas Wild
发明人： Greg Braeckelmann , Marius Orlowski , Andreas Wild
IPC分类号： H01L23/48
CPC分类号： H01L21/7682 , H01L21/76829 , H01L21/76834
摘要： Providing a first layer of a semiconductor structure having at least one air gap between conductive lines formed in the first layer. The air gap extends into the first layer from a first surface of the first layer. A barrier dielectric material over the first surface and the air gap is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap. An air gap can extend from a first surface of the first layer to at least a portion of side surfaces of the at least two conductive lines to expose at least a portion of the side surfaces.
摘要翻译：提供在第一层中形成的导线之间具有至少一个气隙的半导体结构的第一层。气隙从第一层的第一表面延伸到第一层。选择第一表面和空气间隙上的阻挡介电材料以具有小于3.5的介电常数并提供屏障以防止化学品进入至少一个气隙。气隙可以从第一层的第一表面延伸到至少两个导电线的侧表面的至少一部分，以暴露侧表面的至少一部分。

13. 发明申请

US20110021036A1 METHOD OF SEALING AN AIR GAP IN A LAYER OF A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE 有权
标题翻译：在半导体结构和半导体结构层中密封空气隙的方法
公开(公告)号：US20110021036A1
公开(公告)日：2011-01-27
申请号：US12936113
申请日：2008-04-17
申请人： Greg Braecklmann , Marius Orlowski , Andreas Wild
发明人： Greg Braecklmann , Marius Orlowski , Andreas Wild
IPC分类号： H01L21/312
CPC分类号： H01L21/7682 , H01L21/76829 , H01L21/76834
摘要： A method of sealing an air gap in a layer of a semiconductor structure comprises providing a first layer of the semiconductor structure having at least one air gap for providing isolation between at least two conductive lines formed in the first layer. The at least one air gap extends into the first layer from a first surface of the first layer. The method further comprises forming a barrier layer of a barrier dielectric material over the first surface of the first layer and the at least one air gap. The barrier dielectric material is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap. In another embodiment, the at least one air gap extends from a first surface of the first layer to at least a portion of side surfaces of the at least two conductive lines to expose at least a portion of the side surfaces, and a barrier layer of a barrier dielectric material is formed over the exposed portions of the side surfaces of each of the at least two conductive lines.
摘要翻译：密封半导体结构层中的气隙的方法包括提供具有至少一个气隙的半导体结构的第一层，用于在形成在第一层中的至少两个导电线之间提供隔离。所述至少一个气隙从所述第一层的第一表面延伸到所述第一层中。该方法还包括在第一层的第一表面和至少一个气隙上形成阻挡介电材料的阻挡层。阻挡介电材料被选择为具有小于3.5的介电常数并且提供屏障以防止化学品进入至少一个气隙。在另一个实施例中，至少一个空气间隙从第一层的第一表面延伸到至少两个导电线的侧表面的至少一部分以暴露至少一部分侧表面，并且阻挡层在所述至少两根导电线中的每一个的侧表面的暴露部分上形成阻挡介电材料。

14. 发明申请

US20110003451A1 INTERMEDIATE PRODUCT FOR A MULTICHANNEL FET AND PROCESS FOR OBTAINING AN INTERMEDIATE PRODUCT 有权
标题翻译：用于多通道FET的中间产品和获得中间产品的过程
公开(公告)号：US20110003451A1
公开(公告)日：2011-01-06
申请号：US12865517
申请日：2008-02-08
申请人： Marius Orlowski , Andreas Wild
发明人： Marius Orlowski , Andreas Wild
IPC分类号： H01L21/336 , H01L29/165 , H01L21/20
CPC分类号： H01L29/78696 , H01L29/42392 , H01L29/66772 , H01L29/78687
摘要： An intermediate product in the manufacture of a vertical multiple-channel FET device containing alternating —Si—[(SiGe)—Si]u- stacked layers is shown, as well as a process for selectively etching the SiGe layers in such a stacked layer system, and products obtained from such selective etching. Differential Ge content is added to the successive layers to provide uniform removal of the sacrificial SiGe layers.
摘要翻译：示出了制造包含交替的-Si - [（SiGe）-Si]层叠层的垂直多通道FET器件的中间产品，以及用于在这种堆叠层系统中选择性蚀刻SiGe层的工艺，以及从这种选择性蚀刻获得的产品。将差分Ge含量添加到连续层中以提供牺牲SiGe层的均匀去除。

15. 发明授权

US07138954B2 Antenna assembly comprising a surface dipole 有权
标题翻译：包括表面偶极子的天线组件
公开(公告)号：US07138954B2
公开(公告)日：2006-11-21
申请号：US10528105
申请日：2003-09-11
申请人： Gerald Schillmeier , Gerhard Stadler , Ralf Exler , Andreas Wild
发明人： Gerald Schillmeier , Gerhard Stadler , Ralf Exler , Andreas Wild
IPC分类号： H01Q9/28
CPC分类号： H01Q9/285 , H01Q23/00
摘要： An improved antenna assembly, wherein: the opposing end regions of the dipole halves are each electrically connected to a respective connection line; the connection lines lead to two amplifiers; the outputs of both amplifiers are connected to the two inputs of a transform, whose output is at least indirectly electrically connected to a connector, a coaxial connector; one or more filters are provided; the filters are positioned between the connection lines and the connector terminal; the filter or filters is/are designed to suppress mobile radio frequency ranges and/or to protect broadcasting signals.
摘要翻译：一种改进的天线组件，其中：偶极子半部的相对端部区域各自电连接到相应的连接线; 连接线通向两个放大器; 两个放大器的输出连接到变换的两个输入，其输出至少间接地电连接到连接器，同轴连接器; 提供一个或多个过滤器; 过滤器位于连接线和连接器端子之间; 滤波器或滤波器被设计为抑制移动射频范围和/或保护广播信号。

16. 发明授权

US06626056B2 Electronic-hydraulic control device for transmission of vehicles, preferably of motor vehicles 失效
标题翻译：用于车辆传输的电子液压控制装置，优选机动车辆
公开(公告)号：US06626056B2
公开(公告)日：2003-09-30
申请号：US10010001
申请日：2001-11-13
申请人： Roland Albert , Roland Meyer , Karl Smirra , Michael Ulm , Andreas Wild
发明人： Roland Albert , Roland Meyer , Karl Smirra , Michael Ulm , Andreas Wild
IPC分类号： F16H5702
CPC分类号： F16H61/30 , F16H59/70 , F16H61/0009 , F16H63/3023 , F16H2061/308 , F16H2063/3093 , Y10T74/19251 , Y10T74/2186
摘要： An electronic-hydraulic control device for gearboxes of vehicles, preferably motor vehicles, includes a housing in which an electronic unit for controlling magnetic valves is accommodated. The valves are supplied with a pressure medium. The housing has a magnetic housing part in which magnetic parts of the magnetic valves and the electronic unit of the control device are accommodated and which lies outside the gearbox, and a hydraulic housing part in which hydraulic parts of the magnetic valves are located and which is positioned at least partially inside the gearbox housing.
摘要翻译：用于车辆，优选机动车辆的齿轮箱的电子液压控制装置包括容纳用于控制电磁阀的电子单元的壳体。阀门配有压力介质。壳体具有磁性壳体部分，磁性阀的磁性部分和控制装置的电子单元被容纳在齿轮箱的外部，以及液压壳体部分，其中电磁阀的液压部分位于其中至少部分地位于变速箱壳体内。

17. 发明授权

US06474749B2 Hydraulic system for actuating at least two operating systems of a motor vehicle 失效
标题翻译：用于驱动机动车辆的至少两个操作系统的液压系统
公开(公告)号：US06474749B2
公开(公告)日：2002-11-05
申请号：US09874871
申请日：2001-06-04
申请人： Alfred Trzmiel , Wolfgang Stephan , Roland Meyer , Andreas Wild
发明人： Alfred Trzmiel , Wolfgang Stephan , Roland Meyer , Andreas Wild
IPC分类号： B60T834
CPC分类号： B60T8/328 , B60T13/68 , B60W10/10 , B60W10/18 , B60W10/20 , B60W30/18 , B60W2710/18 , B62D5/07 , Y10T137/265 , Y10T137/7761
摘要： A hydraulic system for actuating at least two operating systems of a motor vehicle has a first hydraulic medium reservoir for storing a hydraulic medium. A distribution valve is connected to the first hydraulic medium reservoir and to the operating systems of the motor vehicle. A control unit is connected to the distribution valve which is configured to distribute the hydraulic medium from the first hydraulic medium reservoir to the operating systems of the motor vehicle and to control flow of the hydraulic medium to the operating systems of the motor vehicle such that one of the operating systems has priority with regard to supply of the hydraulic medium. A first one of the operating systems is a brake device having a brake power assist unit, a brake valve, and a master brake cylinder. The brake power assist unit is connected via the brake valve to the control unit.
摘要翻译：用于致动机动车辆的至少两个操作系统的液压系统具有用于存储液压介质的第一液压介质储存器。分配阀连接到第一液压介质储存器和机动车辆的操作系统。控制单元连接到分配阀，其被配置为将液压介质从第一液压介质储存器分配到机动车辆的操作系统并且控制液压介质到机动车辆的操作系统的流动，使得一个的操作系统在液压介质的供给方面具有优先权。操作系统中的第一个是具有制动助力单元，制动阀和主制动缸的制动装置。制动助力单元经由制动阀连接到控制单元。

18. 发明公开

US20230259749A1 CONIC PROGRAMMING BASED ON NEURAL NETWORK WITH SPIKING NEUROMORPHIC ARCHITECTURE 审中-公开
公开(公告)号：US20230259749A1
公开(公告)日：2023-08-17
申请号：US18308152
申请日：2023-04-27
申请人： Ashish Rao Mangalore , Gabriel Andres Fonseca Guerra , Sumedh Risbud , Philipp Stratmann , Andreas Wild
发明人： Ashish Rao Mangalore , Gabriel Andres Fonseca Guerra , Sumedh Risbud , Philipp Stratmann , Andreas Wild
IPC分类号： G06N3/063
CPC分类号： G06N3/063
摘要： A neural network, which can solve conic optimization problems may include a first layer, a second layer, and a third layer. The first layer includes first neurons encoding constraint coefficients of the conic optimization problem. The second layer includes second neurons encoding decision variables of the conic optimization problem. The third layer includes an integrator neuron. Data may be sent from a first neuron to a second neuron or from the second neuron to the first neuron. A neuron, after receiving data from another neuron, may update its internal state parameter based on the data and the weight of the connection between the two neurons. The communication may be triggered by the internal state parameter of the neuron sending the data meets a criterion. After the internal state parameter of the integrator neuron meets a criterion, the integrator neuron may output a solution to the conic optimization problem.

19. 发明授权

US10263280B2 9,10-Bis(1,3-dithiol-2-ylidene)-9,10-dihydroanthracene polymers and use thereof 有权
公开(公告)号：US10263280B2
公开(公告)日：2019-04-16
申请号：US15129910
申请日：2015-03-26
申请人： Bernhard Haeupler , Ulrich Schubert , Andreas Wild
发明人： Bernhard Haeupler , Ulrich Schubert , Andreas Wild
IPC分类号： C08F12/30 , H01M10/0565 , C08F12/34 , C08G65/22 , H01M4/60 , C07D409/04 , C08F134/04
摘要： The problem addressed was that of providing novel polymers which are preparable with a low level of complexity, with the possibility of controlled influence on the physicochemical properties thereof within wide limits in the course of synthesis, and which are usable as active media in electrical charge storage elements for high storage capacity, long lifetime and stable charging/discharging plateaus.9,10-Bis(1,3-dithiol-2-ylidene)-9,10-dihydroanthracene polymers consisting of an oligomeric or polymeric compound of the general formula I have been found.

20. 发明授权

US08158484B2 Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device 有权
标题翻译：形成用于反向T沟道场效应晶体管器件的反相T形沟道结构的方法
公开(公告)号：US08158484B2
公开(公告)日：2012-04-17
申请号：US12679385
申请日：2007-10-03
申请人： Marius Orlowski , Andreas Wild
发明人： Marius Orlowski , Andreas Wild
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L29/7854 , H01L29/66795 , H01L29/78687
摘要： A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a first semiconductor material over the semiconductor substrate, and providing a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. The method further comprises removing a portion of the first layer and a portion of the second layer selectively according to the different rates of removal so as to provide a lateral layer and the vertical channel portion of the inverted T shaped channel structure and removing a portion of the lateral layer so as to provide the horizontal channel portion of the inverted T shaped channel structure.
摘要翻译：一种形成具有用于反向T沟道场效应晶体管ITFET器件的垂直沟道部分和水平沟道部分的反向T形沟道结构的方法包括提供半导体衬底，在半导体衬底上提供第一半导体材料的第一层，以及在所述第一层上提供第二半导体材料层。选择第一和第二半导体材料，使得第一半导体材料具有小于除去第二半导体材料的速率的去除速率。该方法还包括根据不同的去除速率选择性地去除第一层的一部分和第二层的一部分，以便提供倒置的T形沟道结构的横向层和垂直沟道部分，并且去除横向层，以提供倒置的T形通道结构的水平通道部分。

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