专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110021036A1 METHOD OF SEALING AN AIR GAP IN A LAYER OF A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE 有权
标题翻译：在半导体结构和半导体结构层中密封空气隙的方法
公开(公告)号：US20110021036A1
公开(公告)日：2011-01-27
申请号：US12936113
申请日：2008-04-17
申请人： Greg Braecklmann , Marius Orlowski , Andreas Wild
发明人： Greg Braecklmann , Marius Orlowski , Andreas Wild
IPC分类号： H01L21/312
CPC分类号： H01L21/7682 , H01L21/76829 , H01L21/76834
摘要： A method of sealing an air gap in a layer of a semiconductor structure comprises providing a first layer of the semiconductor structure having at least one air gap for providing isolation between at least two conductive lines formed in the first layer. The at least one air gap extends into the first layer from a first surface of the first layer. The method further comprises forming a barrier layer of a barrier dielectric material over the first surface of the first layer and the at least one air gap. The barrier dielectric material is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap. In another embodiment, the at least one air gap extends from a first surface of the first layer to at least a portion of side surfaces of the at least two conductive lines to expose at least a portion of the side surfaces, and a barrier layer of a barrier dielectric material is formed over the exposed portions of the side surfaces of each of the at least two conductive lines.
摘要翻译：密封半导体结构层中的气隙的方法包括提供具有至少一个气隙的半导体结构的第一层，用于在形成在第一层中的至少两个导电线之间提供隔离。所述至少一个气隙从所述第一层的第一表面延伸到所述第一层中。该方法还包括在第一层的第一表面和至少一个气隙上形成阻挡介电材料的阻挡层。阻挡介电材料被选择为具有小于3.5的介电常数并且提供屏障以防止化学品进入至少一个气隙。在另一个实施例中，至少一个空气间隙从第一层的第一表面延伸到至少两个导电线的侧表面的至少一部分以暴露至少一部分侧表面，并且阻挡层在所述至少两根导电线中的每一个的侧表面的暴露部分上形成阻挡介电材料。

IPRDB

热门服务

关于我们

友情链接

联系方式