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    • 12. 发明申请
    • METHOD FOR DETECTING MICROORGANISMS, DEVICE FOR DETECTING MICROORGANISMS AND PROGRAM
    • 检测微生物的方法,用于检测微生物和程序的装置
    • US20130109051A1
    • 2013-05-02
    • US13805631
    • 2011-06-20
    • Shenglan LiTakashi NishidaChizuka KaiKunimitsu Toyoshima
    • Shenglan LiTakashi NishidaChizuka KaiKunimitsu Toyoshima
    • C12Q1/04
    • C12Q1/04C12M41/46C12Q1/02G06K9/0014G06K9/6269G06T7/0012G06T2207/10024G06T2207/20081G06T2207/30024
    • A method for detecting microorganisms, which comprises: a training step for forming, by a classifier, feature vectors based on color data on individual points within a subject region of training in a culture medium, mapping the points in the culture medium, that are specified by the feature vectors, on a high-dimensional feature space, and linearly separating a set of the points ψ (x1), that are specified by the high-dimensional feature vectors thus obtained, to thereby color-classify the class (C1) of the culture medium; and a identifying step for forming, by a classifier, feature vectors based on color data on individual inspection points within a region in the culture medium using image data obtained by capturing an image of the culture medium under cultivation, mapping the inspection points (xj), that are specified by the feature vectors, on a high-dimensional feature space, and determining whether or not the mapped points ψ (xj), that are specified by the high-dimensional feature vectors thus obtained, belong to the class (C1) of the culture medium, thereby identifying a colony based on inspection points not belonging to the class (C1) of the culture medium.
    • 一种用于检测微生物的方法,其特征在于包括:训练步骤,用于通过分类器基于培养基中训练对象区域内的各个点上的颜色数据形成特征向量,对培养基中指定的点进行映射 通过特征向量在高维特征空间上,并且由这样获得的高维特征向量线性分离由所获得的高维特征向量指定的一组点psi(x1),从而对类别(C1)进行颜色分类 培养基; 以及识别步骤,通过使用通过捕获培养下的培养基的图像获得的图像数据,在分类器中形成基于在培养基中的区域内的各个检查点上的颜色数据的特征向量,将检查点(xj) 由特征向量指定,在高维特征空间上,并且确定由如此获得的高维特征向量指定的映射点psi(xj)是否属于类(C1) 的培养基,从而根据不属于培养基类(C1)的检查点来鉴定菌落。
    • 15. 发明授权
    • Semiconductor device including arrangement for reducing junction
degradation
    • 半导体器件包括用于减少结退化的装置
    • US5426326A
    • 1995-06-20
    • US103206
    • 1993-08-09
    • Kiyonori OhyuKozo WatanabeOsamu TsuchiyaKazuyoshi OshimaYoshifumi KawamotoAtsushi HiraiwaTakashi Nishida
    • Kiyonori OhyuKozo WatanabeOsamu TsuchiyaKazuyoshi OshimaYoshifumi KawamotoAtsushi HiraiwaTakashi Nishida
    • H01L27/10H01L29/08H01L29/36H01L29/78H01L29/165
    • H01L29/0847H01L29/08H01L29/36
    • An arrangement is provided to decrease the junction degradation caused by the leakage current at a p-n junction in semiconductor devices. This arrangement can be useful for a variety of devices, and is especially effective for reducing junction degradation at the source or drain region of a MOSFET. To achieve such a reduction, a p-n junction layer is provided at a p-n junction of a semiconductor region and a substrate. Carrier concentration distributions of a p-type layer and an n-type layer of the p-n junction layer are set so that an electric field which tends to be increased by a local electric field enhancement in a depletion layer of the p-n junction due to a precipitate introduced from a semiconductor surface will not exceed 1 MV/cm. When the depth of a depletion layer of the p-type layer or the n-type layer is referred to as Xp or Xn, and the slope of the carrier concentration, Ap or An, the following relation is provided:4.3.times.10.sup.12 (/cm.sup.2).gtoreq.An.multidot.Xn.sup.2 =Ap.multidot.Xp.sup.2Preferably, the p-n junction layer is formed under a contact hole of a source or drain region if the device in question is a MOSFET. As a result of using this arrangement, the leakage current caused by a local Zener effect decreases so that the electric field locally increased by the precipitate will not be greater than 1 MV/cm.
    • 提供了一种布置,以减少由半导体器件中的p-n结处的漏电流引起的结劣化。 这种布置对于各种器件可能是有用的,并且对于降低MOSFET的源极或漏极区域处的结退化特别有效。 为了实现这种减少,在半导体区域和衬底的p-n结处提供p-n结层。 pn结层的p型层和n型层的载流子浓度分布被设定为使得由于沉淀引起的在pn结的耗尽层中的局部电场增强倾向于增加的电场 从半导体表面引入的电流不超过1MV / cm。 当p型层或n型层的耗尽层的深度被称为Xp或Xn以及载流子浓度Ap或An的斜率时,提供以下关系:4.3×10 12(/ cm 2) )> / = AnxXn2 = ApxXp2如果所讨论的器件是MOSFET,则优选地,在源极或漏极区域的接触孔下方形成pn结层。 作为使用这种布置的结果,由局部齐纳效应引起的漏电流减小,使得由沉淀物局部增加的电场将不会大于1MV / cm。
    • 18. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US4710398A
    • 1987-12-01
    • US900523
    • 1986-08-26
    • Yoshio HommaTakashi Nishida
    • Yoshio HommaTakashi Nishida
    • H01L23/522H01L21/3205H01L21/768H01L23/532H01L21/285
    • H01L21/76877H01L23/53223H01L2924/0002
    • A method of manufacturing a semiconductor device. An insulation film having an opening is formed on a semiconductor substrate. The opening is filled with an electrically conductive material so as to substantially flatten the top surface of the opening filled with an electrically conductive material, an intermediate layer of an electrically conductive material having a greater allowable current density than that of a wiring layer to be formed thereon is formed so as to cover at least their surface of the electrically condictive material deposited in the opening. Subsequently, the wiring layer is formed so as to extend from the surface of the intermediate layer onto the surface of the insulation film. A semiconductor device incorporating the wiring layer having an extremely high reliability can be easily realized.
    • 一种制造半导体器件的方法。 在半导体衬底上形成具有开口的绝缘膜。 开口填充有导电材料,以便使填充有导电材料的开口的顶表面基本平坦化,导电材料的中间层具有比待形成的布线层的电流密度更大的容许电流密度 其上形成为至少覆盖沉积在开口中的电气性条件材料的表面。 随后,布线层形成为从中间层的表面延伸到绝缘膜的表面上。 结合具有极高可靠性的布线层的半导体器件可以容易地实现。