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11. 发明授权

US6140226A Dual damascene processing for semiconductor chip interconnects 失效
公开(公告)号：US6140226A
公开(公告)日：2000-10-31
申请号：US126212
申请日：1998-07-30
申请人： Alfred Grill , John Patrick Hummel , Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel , Katherine Lynn Saenger
发明人： Alfred Grill , John Patrick Hummel , Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel , Katherine Lynn Saenger
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76811 , H01L21/76813 , H01L2221/1063 , Y10S438/945
摘要： The present invention relates to lithographic methods for forming a dual relief pattern in a substrate, and the application of such methods to fabricating multilevel interconnect structures in semiconductor chips by a Dual Damascene process in which dual relief cavities formed in a dielectric are filled with conductive material to form the wiring and via levels. The invention comprises a twice patterned single mask layer Dual Damascene process modified by the addition of an easy-to-integrate sidewall liner to protect organic interlevel and intralevel dielectrics from potential damage induced by photoresist stripping steps during lithographic rework. The invention further comprises a method for forming a dual pattern hard mask which may be used to form dual relief cavities for use in Dual Damascene processing, said dual pattern hard mask comprising a first set of one or more layers with a first pattern, and a second set of one or more layers with a second pattern.

12. 发明授权

US06759321B2 Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation 失效
标题翻译：通过紫外线照射使金属/绝缘体布线结构中的含氟低k电介质稳定化
公开(公告)号：US06759321B2
公开(公告)日：2004-07-06
申请号：US10205526
申请日：2002-07-25
申请人： Katherina Babich , Alessandro Callegari , Stephen Alan Cohen , Alfred Grill , Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel , Sampath Purushothaman , Katherine Lynn Saenger
发明人： Katherina Babich , Alessandro Callegari , Stephen Alan Cohen , Alfred Grill , Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel , Sampath Purushothaman , Katherine Lynn Saenger
IPC分类号： H01L214763
CPC分类号： H01L21/76825 , H01L21/0212 , H01L21/02274 , H01L21/02348 , H01L21/31058 , H01L21/3127 , H01L21/31629 , H01L21/76814 , H01L21/76828 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.
摘要翻译：描述了在含氟电介质中提供基本上较低氟含量的区域的方法，其包括将区域暴露于紫外线辐射并在升高的温度下退火以从该区域去除部分被破坏的氟。本发明克服了与含氟介质与其他材料反应的氟的问题，同时保持足够高或原始氟含量的体电介质材料，以保持半导体芯片布线互连结构中有效的低介电常数。

13. 发明授权

US5945155A Low dielectric constant amorphous fluorinated carbon and method of preparation 失效
公开(公告)号：US5945155A
公开(公告)日：1999-08-31
申请号：US972993
申请日：1997-11-19
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel
IPC分类号： C01B31/00 , C07C22/08 , C07C25/13 , C23C14/06 , C23C16/27 , C23C16/50 , H01B3/00 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , C23C16/00
CPC分类号： H01L21/312 , H01L21/0212 , H01L21/02274 , H01L21/3146 , H01L21/76801 , H01L21/76807 , Y10T428/24802 , Y10T428/30 , Y10T428/31678
摘要： An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400.degree. C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.

14. 发明授权

US5942769A Low dielectric constant amorphous fluorinated carbon and method of preparation 失效
标题翻译：低介电常数无定形氟化碳及其制备方法
公开(公告)号：US5942769A
公开(公告)日：1999-08-24
申请号：US974081
申请日：1997-11-19
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel
IPC分类号： C01B31/00 , C07C22/08 , C07C25/13 , C23C14/06 , C23C16/27 , C23C16/50 , H01B3/00 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L31/0312
CPC分类号： H01L21/312 , H01L21/0212 , H01L21/02274 , H01L21/3146 , H01L21/76801 , H01L21/76807 , Y10T428/24802 , Y10T428/30 , Y10T428/31678
摘要： An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400.degree. C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.
摘要翻译：用作电气装置中的介电绝缘层的无定形氟化碳膜由氟化环状烃前体形成。前体可以选自六氟苯，1,2-二乙炔基四氟苯和1,4-双（三氟甲基）苯。通过辐射或束辅助沉积技术如离子束辅助沉积法，激光辅助沉积法或等离子体辅助化学气相沉积法沉积膜。该膜在高达400℃的非氧化环境下是热稳定的，并具有小于3.0的低介电常数。该膜可以适用于互连结构中用于间隔开导体的绝缘体。

15. 发明授权

US5674355A Diamond-like carbon for use in VLSI and ULSI interconnect systems 失效
公开(公告)号：US5674355A
公开(公告)日：1997-10-07
申请号：US483682
申请日：1995-06-07
申请人： Stephan Alan Cohen , Daniel Charles Edelstein , Alfred Grill , Jurij Rostyslav Paraszczak , Vishnubhai Vitthalbhai Patel
发明人： Stephan Alan Cohen , Daniel Charles Edelstein , Alfred Grill , Jurij Rostyslav Paraszczak , Vishnubhai Vitthalbhai Patel
IPC分类号： H01L21/8238 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L27/092 , H01L21/306
CPC分类号： H01L21/3146 , H01L21/02115 , H01L21/0212 , H01L21/02274 , H01L23/5329 , H01L2924/0002
摘要： The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.

16. 发明授权

US5663854A Prebent ceramic suspension 失效
标题翻译：预浸陶瓷悬浮液
公开(公告)号：US5663854A
公开(公告)日：1997-09-02
申请号：US474616
申请日：1995-06-07
申请人： Alfred Grill , Michael Anthony Moser , Vishnubhai Vitthalbhai Patel , Clinton Davis Snyder , Celia E. Yeack-Scranton, deceased
发明人： Alfred Grill , Michael Anthony Moser , Vishnubhai Vitthalbhai Patel , Clinton Davis Snyder , Celia E. Yeack-Scranton, deceased
IPC分类号： G11B5/48
CPC分类号： G11B5/4833
摘要： The present invention provides a prebent ceramic suspension which includes a ceramic load beam which is bent by a stress patch. With thin film techniques the stress patch is formed on top of the load beam. In the preferred embodiment the patch is amorphous hydrogenated diamond-like carbon. When the suspension is on a wafer the carbon patch exerts a compressive stress on a top surface of the load beam just under the patch. When the suspension is released from the wafer the compressive patch exerts tensile forces on the top surface of the load beam causing an end of the load beam to bend toward the wafer. The amount of bending of the suspension can be accurately controlled by the cross sections of the load beam and the patch as well as the lateral dimensions of the patch. Further control can be achieved by controlling the hydrogen, nitrogen and other additive components of the carbon patch. After fabrication bending can be lessened by machining portions of the patch with a laser beam to effectively negate the stress of these portions. Still further, the patch can be laterally configured so that the suspension forms an arc when preloaded on a disk. During fabrication various layers can be formed by thin film deposition to form an integrated magnetic head-slider-suspension. A pair of prebent ceramic suspensions can be preloaded on adjacent magnetic disks by a single actuator arm.
摘要翻译：本发明提供了一种前置陶瓷悬架，其包括由应力块弯曲的陶瓷载荷梁。利用薄膜技术，应力贴片形成在负载梁的顶部。在优选的实施方案中，贴剂是无定形氢化金刚石样碳。当悬浮液在晶片上时，碳贴片在正好在补片下方的负载梁的顶表面上施加压应力。当悬浮液从晶片释放时，压片在载荷梁的顶表面上施加拉力，使载荷梁的一端向晶片弯曲。可以通过负载梁和贴片的横截面以及贴片的横向尺寸精确地控制悬架的弯曲量。通过控制碳补片的氢，氮和其他添加剂组分可以进一步控制。通过利用激光束加工贴片的部分可以减少制造弯曲之后，有效地消除这些部分的应力。此外，补片可以横向配置，使得悬挂在预先装载在盘上时形成弧。在制造期间，可以通过薄膜沉积形成各种层以形成集成的磁头 - 滑块 - 悬架。一对预制陶瓷悬架可以通过单个执行器臂预载在相邻的磁盘上。

17. 发明授权

US06337518B1 Low dielectric constant amorphous fluorinated carbon and method of preparation 失效
标题翻译：低介电常数无定形氟化碳及其制备方法
公开(公告)号：US06337518B1
公开(公告)日：2002-01-08
申请号：US09418273
申请日：1999-08-23
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel
IPC分类号： H01L23485
CPC分类号： H01L21/0212 , H01L21/02274 , H01L21/312 , H01L21/3146 , H01L21/76801 , H01L21/76807 , Y10T428/24802 , Y10T428/30 , Y10T428/31678
摘要： An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400° C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.
摘要翻译：用作电气装置中的介电绝缘层的无定形氟化碳膜由氟化环状烃前体形成。前体可以选自六氟苯，1,2-二乙炔基四氟苯和1,4-双（三氟甲基）苯。通过辐射或束辅助沉积技术如离子束辅助沉积法，激光辅助沉积法或等离子体辅助化学气相沉积法沉积膜。该膜在高达400℃的非氧化环境中是热稳定的，并具有小于3.0的低介电常数。该膜可以适用于互连结构中用于间隔开导体的绝缘体。

18. 发明授权

US5674638A Fluorinated diamond-like carbon protective coating for magnetic recording media devices 失效
标题翻译：用于磁记录介质装置的氟化金刚石类碳保护涂层
公开(公告)号：US5674638A
公开(公告)日：1997-10-07
申请号：US537497
申请日：1995-10-02
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel
IPC分类号： G11B5/255 , G11B5/31 , G11B5/72 , G11B5/84 , G11B5/85 , G11B5/851 , G11B5/66
CPC分类号： G11B5/3106 , G11B5/255 , G11B5/72 , G11B5/8408 , Y10S427/106 , Y10S428/90 , Y10T428/265
摘要： An improved wear-resistant protective coating for the surfaces of magnetic recording media devices that is formed of fluorinated diamond-like carbon and deposited by a plasma enhanced chemical vapor deposition process or other suitable methods to provide superior friction-reducing and stiction-reducing properties.
摘要翻译：用于由氟化类金刚石碳形成并通过等离子体增强化学气相沉积工艺或其它合适方法沉积的磁记录介质装置的表面的改进的耐磨保护涂层，以提供优异的减少摩擦和降低阻力的性能。

19. 发明授权

US06479110B2 Multiphase low dielectric constant material and method of deposition 有权
标题翻译：多相低介电常数材料及沉积方法
公开(公告)号：US06479110B2
公开(公告)日：2002-11-12
申请号：US09966836
申请日：2001-09-27
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel , Stephen McConnell Gates
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel , Stephen McConnell Gates
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/312 , H01L21/3122 , H01L21/31633 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/249953 , Y10T428/249954 , Y10T428/249969 , Y10T428/249976 , Y10T428/249978 , Y10T428/249994 , H01L2924/00
摘要： A low dielectric constant, multiphase material which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a multiphase low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of the multiphase low dielectric constant materials that are prepared by the method are further disclosed.
摘要翻译：公开了可用作IC芯片中的互连电介质的低介电常数多相材料。还公开了利用等离子体增强化学气相沉积技术制造多相低介电常数膜的方法。还公开了通过该方法制备的包含多相低介电常数材料的绝缘层的电子器件。

20. 发明授权

US06437443B1 Multiphase low dielectric constant material and method of deposition 有权
公开(公告)号：US06437443B1
公开(公告)日：2002-08-20
申请号：US09966834
申请日：2001-09-27
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel , Stephen McConnell Gates
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel , Stephen McConnell Gates
IPC分类号： H01L2348
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/312 , H01L21/3122 , H01L21/31633 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/249953 , Y10T428/249954 , Y10T428/249969 , Y10T428/249976 , Y10T428/249978 , Y10T428/249994 , H01L2924/00
摘要： A low dielectric constant, multiphase material which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a multiphase low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of the multiphase low dielectric constant materials that are prepared by the method are further disclosed.

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