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11. 发明申请

US20040069651A1 Oxide treatment and pressure control for electrodeposition 审中-公开
标题翻译：氧化物处理和电沉积压力控制
公开(公告)号：US20040069651A1
公开(公告)日：2004-04-15
申请号：US10273044
申请日：2002-10-15
申请人： Applied Materials, Inc.
发明人： Harald Herchen , Henan Hao , Timothy R. Webb , Quyen Pham , Son N. Trinh , Deenesh Padhi
IPC分类号： C25D005/34
CPC分类号： C25D7/123 , C25D5/34
摘要： Method and apparatus for electrodepositing a metal onto a substrate. An oxide treatment process is performed on a substrate prior to making electrical contact between a seed layer of the substrate and a conductive contact element which provides a current. In one embodiment, the pressure at the interface between the seed layer and the conductive contact element is controlled to avoid detrimentally affecting a material(s) of the substrate.
摘要翻译：将金属电沉积到基底上的方法和装置。在衬底的晶种层和提供电流的导电接触元件之间进行电接触之前，在衬底上进行氧化物处理工艺。在一个实施例中，控制种子层和导电接触元件之间的界面处的压力，以避免不利地影响衬底的材料。

12. 发明申请

US20030188974A1 Homogeneous copper-tin alloy plating for enhancement of electro-migration resistance in interconnects 审中-公开
标题翻译：均匀的铜 - 锡合金电镀，用于增强互连中的电迁移电阻
公开(公告)号：US20030188974A1
公开(公告)日：2003-10-09
申请号：US10351227
申请日：2003-01-24
申请人： Applied Materials, Inc.
发明人： Deenesh Padhi , Sivakami Ramanathan , Chris R. McGuirk , Srinivas Gandikota , Girish Dixit
IPC分类号： C25D003/58 , C25D003/60
CPC分类号： H01L21/2885 , C25D3/58 , C25D5/50 , C25D7/123
摘要： Embodiments of the invention may generally provide a method for plating a homogenous copper tin alloy onto a semiconductor substrate. The method generally includes providing a plating solution to a plating cell, wherein the plating solution contains an acid, a copper ion source, and a tin ion source, the copper ion source including up to about 98.5% of the metal ions and the tin ions including up to about 1.5% of the metal ions, providing a plating bias to a conductive layer formed on the semiconductor substrate while the conductive layer is in fluid contact with the plating solution, the plating bias being configured to overlap a plating potential range of both copper and tin, and simultaneously plating copper and tin ions onto the conductive layer from the plating solution to form a homogenous copper tin alloy layer on the conductive layer.
摘要翻译：本发明的实施方案通常可以提供将均匀的铜锡合金电镀到半导体衬底上的方法。该方法通常包括向镀覆电池提供镀液，其中电镀溶液含有酸，铜离子源和锡离子源，所述铜离子源包括高达98.5％的金属离子和锡离子包括高达约1.5％的金属离子，当导电层与电镀液体流体接触时，对形成在半导体衬底上的导电层提供电镀偏压，镀层偏压被配置为与两者的电镀电位范围重叠铜和锡，并且同时从电镀液将铜和锡离子镀在导电层上，以在导电层上形成均匀的铜锡合金层。

13. 发明申请

US20030159937A1 Method to reduce the depletion of organics in electroplating baths 审中-公开
标题翻译：减少电镀浴中有机物消耗的方法
公开(公告)号：US20030159937A1
公开(公告)日：2003-08-28
申请号：US10085822
申请日：2002-02-27
申请人： Applied Materials, Inc.
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Sivakami Ramanathan , Muhammad Atif Malik , Girish A. Dixit
IPC分类号： C25D021/18
CPC分类号： C25D21/14 , C25D21/18
摘要： Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods. The apparatus generally includes a selectively actuated valve in communicaiton with a fluid delivery line, wherein the valve is configured to fluidly isolate a plating cell during a non-processing time period. The valve may be controlled by a system controller, and thus, the fluid level in the cell may be controlled during a non-processing time period.
摘要翻译：本发明的实施方案通常提供用于在电镀浴中补充有机分子的装置和方法。本发明的补充方法可以在实时的基础上进行，因此有机物的浓度最小化从期望的浓度水平变化。补充方法通常包括进行预处理耗尽测量，以便确定在电镀系统中施加的每个电流密度的有机耗尽率。一旦确定了每个电流密度的有机耗尽率，则这些耗尽率可以应用于电镀处理配方以计算每个配方步骤的有机耗尽量。然后可以使用每个配方步骤的计算的有机耗尽体积来确定每个配方步骤所需的每单位时间的有机分子补充体积，以维持电镀溶液中所需的有机物浓度。计算的补充量然后可以被添加到处理配方中，使得补货过程可以在处理时段期间实时发生。该装置通常包括与流体输送管线通信的选择性致动的阀，其中阀被配置为在非处理时间段期间流体地隔离电镀槽。阀可以由系统控制器控制，因此，可以在非处理时间段期间控制单元中的液位。

14. 发明申请

US20030143837A1 Method of depositing a catalytic layer 审中-公开
标题翻译：沉积催化层的方法
公开(公告)号：US20030143837A1
公开(公告)日：2003-07-31
申请号：US10059851
申请日：2002-01-28
申请人： APPLIED MATERIALS, INC.
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Muhammad Atif Malik , Sivakami Ramanathan , Girish A. Dixit , Robin Cheung
IPC分类号： H01L021/44 , H01L021/4763
CPC分类号： H01L21/76843 , C23C18/165 , C23C18/1651 , C23C18/1653 , C23C18/1671 , C23C18/1696 , C23C18/1879 , C23C18/38 , C25D5/10 , H01L21/288 , H01L21/2885 , H01L21/76864 , H01L21/76868 , H01L21/76871 , H01L21/76874 , H01L21/76877 , H01L2221/1089
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a nullpatchnull of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

15. 发明申请

US20020112964A1 Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths 审中-公开
标题翻译：在低酸性铜浴中使用添加剂的非常高的纵横比结构上的间隙填充的工艺窗口
公开(公告)号：US20020112964A1
公开(公告)日：2002-08-22
申请号：US10109560
申请日：2002-03-26
申请人： Applied Materials, Inc.
发明人： Srinivas Gandikota , Chris McGuirk , Deenesh Padhi , Sivakami Ramanathan , Girish Dixit
IPC分类号： C25D005/02 , H01L021/288 , H01L021/445 , C25D003/00 , C25D003/38
CPC分类号： C25D7/123 , C25D3/38 , H05K3/423
摘要： The present invention provides a composition and method for void-free plating of a metal into high aspect ratio features. The plating process is carried out in a plating solution containing metal at a molar concentration of between about 0.4 M and about 0.9 M, an acid at a concentration of between about 4 mg/L and about 40 mg/L, a suppressor at a concentration of between about 2 mL/L and about 15 mL/L, an accelerator at a concentration of between about 1.5 mL/L and about 8 mL/L, and a leveler at a concentration of between about 4 mL/L and about 11 mL/L.
摘要翻译：本发明提供了将金属无孔镀覆成高纵横比特征的组合物和方法。电镀方法在含有摩尔浓度为约0.4M至约0.9M的金属的镀液中，浓度为约4mg / L至约40mg / L的酸，浓度为的抑制剂约2mL / L至约15mL / L的浓度为约1.5mL / L至约8mL / L的加速剂，浓度为约4mL / L至约11mL / L。

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