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11. 发明申请

US20110090704A1 Molded Fluorescent Glass Lens and Manufacturing Method Thereof 审中-公开
标题翻译：模制荧光玻璃透镜及其制造方法
公开(公告)号：US20110090704A1
公开(公告)日：2011-04-21
申请号：US12199266
申请日：2008-08-27
申请人： San-Woei Shyu , Chien-Yi Huang , Ching-Wei Sun , Wen-Huang Liu
发明人： San-Woei Shyu , Chien-Yi Huang , Ching-Wei Sun , Wen-Huang Liu
IPC分类号： F21V5/00 , C03B23/00 , C03C17/00
CPC分类号： C03C14/006 , C03B2215/406 , C03C2214/04 , F21V9/30 , Y02P40/57
摘要： A molded fluorescent glass lens and a manufacturing method thereof are disclosed. Firstly, coat fluorescent material on surface of a glass preform or a cavity of a mold core. Then by glass precision molding, the mold core is heated and pressured for casting the glass preform into a molded fluorescent glass lens. The fluorescent glass lens not only has shape and optical properties of the molded forming lens, but also has fluorescent properties from a fluorescent surface layer formed by fluorescent material inserted into the glass. Thus the produced molded fluorescent glass lens is applied to road reflectors, white light LED or other optical elements for use.
摘要翻译：公开了一种模制荧光玻璃透镜及其制造方法。首先，在玻璃预制件或模芯的空腔的表面上涂覆荧光材料。然后通过玻璃精密成型，将模芯加热并加压以将玻璃预成型件铸造成模制的荧光玻璃透镜。荧光玻璃透镜不仅具有成型透镜的形状和光学特性，而且还具有从插入玻璃中的荧光材料形成的荧光表面层的荧光特性。因此，生产的模制荧光玻璃透镜被应用于道路反射器，白光LED或其他用于使用的光学元件。

12. 发明授权

US07897420B2 Light emitting diodes (LEDs) with improved light extraction by roughening 有权
标题翻译：发光二极管（LED）通过粗糙化改进光提取
公开(公告)号：US07897420B2
公开(公告)日：2011-03-01
申请号：US11956962
申请日：2007-12-14
申请人： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
发明人： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0095 , H01L33/08 , H01L33/22
摘要： Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
摘要翻译：公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

13. 发明授权

US07880182B2 Light-emitting element array 有权
标题翻译：发光元件阵列
公开(公告)号：US07880182B2
公开(公告)日：2011-02-01
申请号：US12482419
申请日：2009-06-10
申请人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
发明人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
IPC分类号： H01L29/88
CPC分类号： H01L25/0753 , F21K9/00 , H01L27/153 , H01L2224/24 , H01L2224/24137 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element array includes a conductive substrate; an adhesive layer disposed on the conductive substrate; a first epitaxial light-emitting stack layers disposed on the adhesive layer, the first epitaxial light-emitting stack layers including a first p-contact and an first n-contact, wherein the first p-contact and the first n-contact are disposed on the same side of the first epitaxial light-emitting stack layer; and a second epitaxial light-emitting stack layers disposed on the adhesive layer including a second p-contact and an second n-contact, wherein the second p-contact and the second n-contact are disposed on the opposite side of the epitaxial light-emitting stack layer; wherein the first epitaxial light-emitting stack layers and the second epitaxial light-emitting stack layers are electrically connected in anti-parallel.
摘要翻译：发光元件阵列包括导电基板; 设置在导电基板上的粘合剂层; 布置在所述粘合剂层上的第一外延发光堆叠层，所述第一外延发光堆叠层包括第一p型接触和第一n型接触，其中所述第一p型接触和所述第一n型接触设置在第一外延发光堆叠层的同一侧; 以及设置在所述粘合剂层上的第二外延发光叠层，包括第二p型接触和第二n型接触，其中所述第二p型接触和所述第二n型接触设置在所述外延发光层的相对侧上，发射堆叠层; 其中所述第一外延发光堆叠层和所述第二外延发光堆叠层以反并联方式电连接。

14. 发明申请

US20090321758A1 LED WITH IMPROVED EXTERNAL LIGHT EXTRACTION EFFICIENCY 审中-公开
标题翻译： LED具有改进的外部光提取效率
公开(公告)号：US20090321758A1
公开(公告)日：2009-12-31
申请号：US12146142
申请日：2008-06-25
申请人： WEN-HUANG LIU , Chung-Che Dan
发明人： WEN-HUANG LIU , Chung-Che Dan
IPC分类号： H01L33/00
CPC分类号： H01L33/505 , H01L33/507 , H01L33/54 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Light-emitting semiconductor devices are provided with certain layers in an effort to produce increased luminous intensity when compared to conventional light-emitting devices. The light-emitting semiconductor device includes a light-emitting semiconductor; a first transparent layer disposed over the light-emitting semiconductor; a first wavelength-converting layer disposed over the first transparent layer, wherein an upper surface of the wavelength-converting layer is curved; and a second transparent layer disposed over the wavelength-converting layer, wherein an upper surface of the second transparent layer is curved or tapered.
摘要翻译：与传统的发光器件相比，发光半导体器件设置有某些层以努力产生增加的发光强度。发光半导体器件包括发光半导体; 设置在所述发光半导体上的第一透明层; 设置在所述第一透明层上的第一波长转换层，其中所述波长转换层的上表面是弯曲的; 以及设置在所述波长转换层上的第二透明层，其中所述第二透明层的上表面是弯曲的或锥形的。

15. 外观设计

USD604256S1 Light emitting diode device 有权
公开(公告)号：USD604256S1
公开(公告)日：2009-11-17
申请号：US29319680
申请日：2008-06-12
申请人： Wen-Huang Liu
设计人： Wen-Huang Liu

16. 发明申请

US20080142814A1 LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING 有权
标题翻译：发光二极管（LED），通过粗化改进光提取
公开(公告)号：US20080142814A1
公开(公告)日：2008-06-19
申请号：US11956962
申请日：2007-12-14
申请人： CHEN-FU CHU , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
发明人： CHEN-FU CHU , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0095 , H01L33/08 , H01L33/22
摘要： Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
摘要翻译：公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

17. 发明申请

US20080087875A1 PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
标题翻译：金属器件外延结构的保护
公开(公告)号：US20080087875A1
公开(公告)日：2008-04-17
申请号：US11548642
申请日：2006-10-11
申请人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
发明人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
IPC分类号： H01L29/06
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/64
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

18. 发明申请

US20070190676A1 LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING 有权
标题翻译：发光二极管（LED），通过粗化改进光提取
公开(公告)号：US20070190676A1
公开(公告)日：2007-08-16
申请号：US11690443
申请日：2007-03-23
申请人： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
发明人： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/08 , H01L33/20
摘要： Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
摘要翻译：公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

19. 发明申请

US20060081857A1 Light emitting device having circuit protection unit 有权
标题翻译：具有电路保护单元的发光装置
公开(公告)号：US20060081857A1
公开(公告)日：2006-04-20
申请号：US11222922
申请日：2005-09-08
申请人： Steve Hong , Jen-Shui Wang , Tzu-Feng Tseng , Ching-San Tao , Wen-Huang Liu , Min-Hsun Hsieh
发明人： Steve Hong , Jen-Shui Wang , Tzu-Feng Tseng , Ching-San Tao , Wen-Huang Liu , Min-Hsun Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L27/15 , H01L33/32 , H01L33/38 , H01L2224/16145 , H01L2224/48145 , H01S5/0421 , H01S5/06825
摘要： A light emitting device having a circuit protection unit is provided. The circuit protection unit has a low-resistance layer and a potential barrier layer, wherein a barrier potential exists at the interface between the low-resistance layer and the potential barrier layer. The circuit protection unit is electrically connected with the light emitting device. When an electrostatic discharge or excessive forward current is occurred in the light emitting device, the circuit protection unit provides a rectifying function for preventing damages caused by static electricity or excessive forward current to the light emitting device.
摘要翻译：提供具有电路保护单元的发光装置。电路保护单元具有低电阻层和势垒层，其中势垒电位存在于低电阻层和势垒层之间的界面处。电路保护单元与发光装置电连接。当在发光装置中发生静电放电或过大的正向电流时，电路保护单元提供整流功能，用于防止由静电引起的损坏或向发光器件产生过大的正向电流。

20. 发明授权

US07009217B2 Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof 有权
公开(公告)号：US07009217B2
公开(公告)日：2006-03-07
申请号：US10904176
申请日：2004-10-27
申请人： Wen-Huang Liu , Tzu-Feng Tseng , Min-Hsun Hsieh , Ting-Wei Yeh , Jen-Shui Wang
发明人： Wen-Huang Liu , Tzu-Feng Tseng , Min-Hsun Hsieh , Ting-Wei Yeh , Jen-Shui Wang
IPC分类号： H01L33/00 , H01L27/15 , H01L31/12
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/42 , H01L33/46
摘要： A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.

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