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1. 发明申请

US20110089444A1 LIGHT-EMITTING ELEMENT 有权
标题翻译：发光元件
公开(公告)号：US20110089444A1
公开(公告)日：2011-04-21
申请号：US12979281
申请日：2010-12-27
申请人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
发明人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
IPC分类号： H01L33/08
CPC分类号： H01L33/42 , F21K9/00 , H01L25/0753 , H01L27/153 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A light emitting element includes a carrier, a conductive connecting structure disposed on the carrier, an epitaxial stack structure including at least a first lighting stack and a second lighting stack disposed on the conductive connecting structure, an insulation section disposed between the epitaxial stack structure and the conductive connecting structure, and at least a metal line laid on the surface of the light emitting element, wherein the first light emitting stack further includes two electrodes having different polarity formed thereon; the second lighting stack is electrically connected to the conductive connecting structure at the bottom thereof and includes an electrode formed thereon. The insulation section is disposed below the first lighting stack to make the first lighting stack be insulated from the conductive connecting structure. The metal lines and the conductive connecting structure are electrically connected to each of the lighting stacks in parallel connection or series connection.
摘要翻译：发光元件包括载体，布置在载体上的导电连接结构，外延堆叠结构，至少包括设置在导电连接结构上的第一照明堆叠和第二照明堆叠;绝缘部分，设置在外延堆叠结构和所述导电连接结构和至少布置在所述发光元件表面上的金属线，其中所述第一发光层还包括形成在其上的具有不同极性的两个电极; 第二照明堆叠在其底部与导电连接结构电连接并且包括形成在其上的电极。绝缘部分设置在第一照明堆叠的下方，以使第一照明堆叠与导电连接结构绝缘。金属线和导电连接结构以并联或串联连接电连接到每个照明堆叠。

2. 发明授权

US07880182B2 Light-emitting element array 有权
标题翻译：发光元件阵列
公开(公告)号：US07880182B2
公开(公告)日：2011-02-01
申请号：US12482419
申请日：2009-06-10
申请人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
发明人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
IPC分类号： H01L29/88
CPC分类号： H01L25/0753 , F21K9/00 , H01L27/153 , H01L2224/24 , H01L2224/24137 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element array includes a conductive substrate; an adhesive layer disposed on the conductive substrate; a first epitaxial light-emitting stack layers disposed on the adhesive layer, the first epitaxial light-emitting stack layers including a first p-contact and an first n-contact, wherein the first p-contact and the first n-contact are disposed on the same side of the first epitaxial light-emitting stack layer; and a second epitaxial light-emitting stack layers disposed on the adhesive layer including a second p-contact and an second n-contact, wherein the second p-contact and the second n-contact are disposed on the opposite side of the epitaxial light-emitting stack layer; wherein the first epitaxial light-emitting stack layers and the second epitaxial light-emitting stack layers are electrically connected in anti-parallel.
摘要翻译：发光元件阵列包括导电基板; 设置在导电基板上的粘合剂层; 布置在所述粘合剂层上的第一外延发光堆叠层，所述第一外延发光堆叠层包括第一p型接触和第一n型接触，其中所述第一p型接触和所述第一n型接触设置在第一外延发光堆叠层的同一侧; 以及设置在所述粘合剂层上的第二外延发光叠层，包括第二p型接触和第二n型接触，其中所述第二p型接触和所述第二n型接触设置在所述外延发光层的相对侧上，发射堆叠层; 其中所述第一外延发光堆叠层和所述第二外延发光堆叠层以反并联方式电连接。

3. 发明授权

US08405107B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08405107B2
公开(公告)日：2013-03-26
申请号：US12979281
申请日：2010-12-27
申请人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
发明人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , F21K9/00 , H01L25/0753 , H01L27/153 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A light emitting element includes a carrier, a conductive connecting structure disposed on the carrier, an epitaxial stack structure including at least a first lighting stack and a second lighting stack disposed on the conductive connecting structure, an insulation section disposed between the epitaxial stack structure and the conductive connecting structure, and at least a metal line laid on the surface of the light emitting element, wherein the first light emitting stack further includes two electrodes having different polarity formed thereon; the second lighting stack is electrically connected to the conductive connecting structure at the bottom thereof and includes an electrode formed thereon. The insulation section is disposed below the first lighting stack to make the first lighting stack be insulated from the conductive connecting structure. The metal lines and the conductive connecting structure are electrically connected to each of the lighting stacks in parallel connection or series connection.
摘要翻译：发光元件包括载体，布置在载体上的导电连接结构，外延堆叠结构，至少包括设置在导电连接结构上的第一照明堆叠和第二照明堆叠;绝缘部分，设置在外延堆叠结构和所述导电连接结构和至少布置在所述发光元件表面上的金属线，其中所述第一发光层还包括形成在其上的具有不同极性的两个电极; 第二照明堆叠在其底部与导电连接结构电连接并且包括形成在其上的电极。绝缘部分设置在第一照明堆叠的下方，以使第一照明堆叠与导电连接结构绝缘。金属线和导电连接结构以并联或串联连接电连接到每个照明堆叠。

4. 发明申请

US20090302334A1 Light-emitting element array 有权
标题翻译：发光元件阵列
公开(公告)号：US20090302334A1
公开(公告)日：2009-12-10
申请号：US12482419
申请日：2009-06-10
申请人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
发明人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
IPC分类号： H01L33/00 , H01L29/88
CPC分类号： H01L25/0753 , F21K9/00 , H01L27/153 , H01L2224/24 , H01L2224/24137 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element array includes a conductive substrate; an adhesive layer disposed on the conductive substrate; a first epitaxial light-emitting stack layers disposed on the adhesive layer, the first epitaxial light-emitting stack layers including a first p-contact and an first n-contact, wherein the first p-contact and the first n-contact are disposed on the same side of the first epitaxial light-emitting stack layer; and a second epitaxial light-emitting stack layers disposed on the adhesive layer including a second p-contact and an second n-contact, wherein the second p-contact and the second n-contact are disposed on the opposite side of the epitaxial light-emitting stack layer; wherein the first epitaxial light-emitting stack layers and the second epitaxial light-emitting stack layers are electrically connected in anti-parallel.
摘要翻译：发光元件阵列包括导电基板; 设置在导电基板上的粘合剂层; 布置在所述粘合剂层上的第一外延发光堆叠层，所述第一外延发光堆叠层包括第一p型接触和第一n型接触，其中所述第一p型接触和所述第一n型接触设置在第一外延发光堆叠层的同一侧; 以及设置在所述粘合剂层上的第二外延发光叠层，包括第二p型接触和第二n型接触，其中所述第二p型接触和所述第二n型接触设置在所述外延发光层的相对侧上，发射堆叠层; 其中所述第一外延发光堆叠层和所述第二外延发光堆叠层以反并联方式电连接。

5. 发明授权

US08022425B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08022425B2
公开(公告)日：2011-09-20
申请号：US12314730
申请日：2008-12-16
申请人： Chiu-Lin Yao , Min-Hsun Hsieh , Tzer-Perng Chen
发明人： Chiu-Lin Yao , Min-Hsun Hsieh , Tzer-Perng Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/08 , H01L33/22 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.
摘要翻译：提供了示例性的半导体器件。半导体器件包括半导体堆叠层和导电结构。导电结构位于半导体堆叠层上。导电结构包括底部和在其相对侧上的顶部。底部与半导体堆叠层接触。顶部的顶部宽度与底部的底部宽度之比小于0.7。导电结构可以是导电点结构或导线结构。

6. 发明授权

US09455242B2 Semiconductor optoelectronic device 有权
标题翻译：半导体光电器件
公开(公告)号：US09455242B2
公开(公告)日：2016-09-27
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/042 , H01L33/00 , H01L25/075 , H01L31/18 , H01L23/00 , H01L33/44 , H01L33/62
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

7. 发明授权

US08791029B2 Stamp having nanoscale structure and applications therefore in light-emitting device 有权
标题翻译：因此具有纳米尺度结构和应用的印章在发光装置中
公开(公告)号：US08791029B2
公开(公告)日：2014-07-29
申请号：US12222548
申请日：2008-08-12
申请人： Chiu-Lin Yao , Ta-Cheng Hsu , Min-Hsun Hsieh
发明人： Chiu-Lin Yao , Ta-Cheng Hsu , Min-Hsun Hsieh
IPC分类号： H01L21/461
CPC分类号： H01L33/22 , H01L2933/0091
摘要： A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.
摘要翻译：公开了具有纳米级结构的印模及其制造方法。印模包括基板，缓冲层和纳米尺度印模层。该方法包括在衬底上形成缓冲层，并在缓冲层上形成具有纳米尺度结构的印模层。

8. 发明申请

US20120055532A1 SEMICONDUCTOR OPTOELECTRONIC DEVICE 有权
标题翻译：半导体光电器件
公开(公告)号：US20120055532A1
公开(公告)日：2012-03-08
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/0224 , H01L33/08 , H01L33/42
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

9. 发明申请

US20090166666A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20090166666A1
公开(公告)日：2009-07-02
申请号：US12314730
申请日：2008-12-16
申请人： Chiu-Lin Yao , Min-Hsun Hsieh , Tzer-Perng Chen
发明人： Chiu-Lin Yao , Min-Hsun Hsieh , Tzer-Perng Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/08 , H01L33/22 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.
摘要翻译：提供了示例性的半导体器件。半导体器件包括半导体堆叠层和导电结构。导电结构位于半导体堆叠层上。导电结构包括底部和在其相对侧上的顶部。底部与半导体堆叠层接触。顶部的顶部宽度与底部的底部宽度之比小于0.7。导电结构可以是导电点结构或导线结构。

10. 发明申请

US20090045435A1 Stamp having nanoscale structure and applications therefore in light-emitting device 有权
标题翻译：因此具有纳米尺度结构和应用的印章在发光装置中
公开(公告)号：US20090045435A1
公开(公告)日：2009-02-19
申请号：US12222548
申请日：2008-08-12
申请人： Chiu-Lin Yao , Ta-Cheng Hsu , Min-Hsun Hsieh
发明人： Chiu-Lin Yao , Ta-Cheng Hsu , Min-Hsun Hsieh
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/22 , H01L2933/0091
摘要： A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.
摘要翻译：公开了具有纳米级结构的印模及其制造方法。印模包括基板，缓冲层和纳米尺度印模层。该方法包括在衬底上形成缓冲层，并在缓冲层上形成具有纳米尺度结构的印模层。

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