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11. 发明申请

US20130119349A1 GRAPHENE TRANSISTOR HAVING AIR GAP, HYBRID TRANSISTOR HAVING THE SAME, AND METHODS OF FABRICATING THE SAME 有权
标题翻译：具有空气隙的石墨晶体管，具有该气隙的混合晶体管及其制造方法
公开(公告)号：US20130119349A1
公开(公告)日：2013-05-16
申请号：US13667097
申请日：2012-11-02
申请人： Hyun-jong CHUNG , U-in CHUNG , Ki-nam KIM
发明人： Hyun-jong CHUNG , U-in CHUNG , Ki-nam KIM
IPC分类号： H01L29/772 , H01L21/8232
CPC分类号： H01L29/772 , B82Y40/00 , H01L21/8232 , H01L27/0688 , H01L29/1606 , H01L29/41758 , H01L29/518 , H01L29/778 , H01L29/78606 , H01L29/78684 , Y10S977/734 , Y10S977/842 , Y10S977/938
摘要： A graphene transistor includes: a gate electrode on a substrate; a gate insulating layer on the gate electrode; a graphene channel on the gate insulating layer; a source electrode and a drain electrode on the graphene channel, the source and drain electrode being separate from each other; and a cover that covers upper surfaces of the source electrode and the drain electrode and forms an air gap above the graphene channel between the source electrode and the drain electrode.
摘要翻译：石墨烯晶体管包括：基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的石墨烯通道; 在石墨烯通道上的源极和漏极，源极和漏极彼此分离; 以及覆盖源电极和漏电极的上表面并在源电极和漏电极之间的石墨烯通道上方形成气隙的盖。

12. 发明申请

US20110212582A1 Method Of Manufacturing High Electron Mobility Transistor 有权
标题翻译：制造高电子迁移率晶体管的方法
公开(公告)号：US20110212582A1
公开(公告)日：2011-09-01
申请号：US13017361
申请日：2011-01-31
申请人： Ki-ha Hong , U-in Chung , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , In-jun Hwang
发明人： Ki-ha Hong , U-in Chung , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , In-jun Hwang
IPC分类号： H01L21/335
CPC分类号： H01L29/402 , H01L29/0891 , H01L29/66462 , H01L29/7786
摘要： A method of manufacturing a High Electron Mobility Transistor (HEMT) may include forming first and second material layers having different lattice constants on a substrate, forming a source, a drain, and a gate on the second material layer, and changing the second material layer between the gate and the drain into a different material layer, or changing a thickness of the second material layer, or forming a p-type semiconductor layer on the second material layer. The change in the second material layer may occur in an entire region of the second material layer between the gate and the drain, or only in a partial region of the second material layer adjacent to the gate. The p-type semiconductor layer may be formed on an entire top surface of the second material layer between the gate and the drain, or only on a partial region of the top surface adjacent to the gate.
摘要翻译：制造高电子迁移率晶体管（HEMT）的方法可以包括在衬底上形成具有不同晶格常数的第一和第二材料层，在第二材料层上形成源极，漏极和栅极，以及改变第二材料层在栅极和漏极之间形成不同的材料层，或改变第二材料层的厚度，或在第二材料层上形成p型半导体层。第二材料层的变化可以在栅极和漏极之间的第二材料层的整个区域中发生，或者仅在与栅极相邻的第二材料层的部分区域中发生。 p型半导体层可以形成在栅极和漏极之间的第二材料层的整个顶表面上，或者仅形成在与栅极相邻的顶表面的部分区域上。

13. 发明申请

US20070215959A1 Semiconductor structures including accumulations of silicon boronide and related methods 审中-公开
标题翻译：半导体结构包括硅化硼的积累和相关方法
公开(公告)号：US20070215959A1
公开(公告)日：2007-09-20
申请号：US11713877
申请日：2007-03-05
申请人： Jin-Wook Lee , Chang-Woo Ryoo , Tai-Su Park , U-In Chung , Yu-Gyun Shin
发明人： Jin-Wook Lee , Chang-Woo Ryoo , Tai-Su Park , U-In Chung , Yu-Gyun Shin
IPC分类号： H01L29/94
CPC分类号： H01L29/4941 , H01L21/28061
摘要： A semiconductor device may include a semiconductor substrate, first and second source/drain regions on a surface of the semiconductor substrate, and a channel region on the surface of the semiconductor substrate with the channel region between the first and second source/drain regions. An insulating layer pattern may be on the channel region, a first conductive layer pattern may be on the insulating layer, and a second conductive layer pattern may be on the first conductive layer pattern. The insulating layer pattern may be between the first conductive layer pattern and the channel region, and the first conductive layer pattern may include boron doped polysilicon with a surface portion having an accumulation of silicon boronide. The first conductive layer pattern may be between the second conductive layer pattern and the insulating layer pattern, and the second conductive layer pattern may include tungsten. Related methods are also discussed.
摘要翻译：半导体器件可以包括半导体衬底，半导体衬底的表面上的第一和第二源极/漏极区域以及在第一和第二源极/漏极区域之间具有沟道区域的半导体衬底的表面上的沟道区域。绝缘层图案可以在沟道区上，第一导电层图案可以在绝缘层上，并且第二导电层图案可以在第一导电层图案上。绝缘层图案可以在第一导电层图案和沟道区之间，并且第一导电层图案可以包括硼掺杂多晶硅，表面部分具有硅化硼的积累。第一导电层图案可以在第二导电层图案和绝缘层图案之间，并且第二导电层图案可以包括钨。还讨论了相关方法。

14. 发明授权

US07153750B2 Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes 有权
标题翻译：形成包括硅 - 锗和金属电极的半导体器件的电容器的方法
公开(公告)号：US07153750B2
公开(公告)日：2006-12-26
申请号：US10823352
申请日：2004-04-13
申请人： Eun-ae Chung , Ki-hyun Hwang , Jung-hwan Oh , Hyo-jung Kim , Seok-woo Nam , Won-sik Shin , U-in Chung , Young-sun Kim , Hee-seok Kim , Beom-jun Jin
发明人： Eun-ae Chung , Ki-hyun Hwang , Jung-hwan Oh , Hyo-jung Kim , Seok-woo Nam , Won-sik Shin , U-in Chung , Young-sun Kim , Hee-seok Kim , Beom-jun Jin
IPC分类号： H01L21/20
CPC分类号： H01L28/75 , H01L27/10852
摘要： A capacitor of a semiconductor device includes a cylinder type capacitor lower electrode, a dielectric layer, and an upper electrode. The upper electrode includes a metallic layer on the dielectric layer and a doped polySi1-xGex layer stacked on the metallic layer. Methods of forming these capacitors also are provided.
摘要翻译：半导体器件的电容器包括圆筒型电容器下电极，电介质层和上电极。上电极包括介于电介质层上的金属层和层叠在金属层上的掺杂多晶硅层1-x N层。还提供了形成这些电容器的方法。

15. 发明授权

US07148541B2 Vertical channel field effect transistors having insulating layers thereon 有权
标题翻译：其上具有绝缘层的垂直沟道场效应晶体管
公开(公告)号：US07148541B2
公开(公告)日：2006-12-12
申请号：US10780067
申请日：2004-02-17
申请人： Tai-su Park , Eui-Joon Yoon , U-In Chung , Si-Young Choi , Jong-Ho Lee
发明人： Tai-su Park , Eui-Joon Yoon , U-In Chung , Si-Young Choi , Jong-Ho Lee
IPC分类号： H01L27/01
CPC分类号： H01L29/7851 , H01L29/66795 , H01L29/7854
摘要： A field effect transistor can include a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The transistor can also include a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction. Related methods are also disclosed.
摘要翻译：场效应晶体管可以包括从包括垂直沟道和衬底之间的源极/漏极区域的衬底突出的垂直沟道，以及在垂直沟道的侧壁上朝向衬底延伸到源极/漏极区域交界处晶体管还可以包括在离开衬底的侧壁上延伸超过绝缘层的氮化物层，在侧壁上延伸的第二绝缘层，其通过氮化物层与沟道分离，以及栅电极侧壁朝向衬底以超出源/漏区结。还公开了相关方法。

16. 发明授权

US08975568B2 Image sensors having variable voltage-current characteristics and methods of operating the same 有权
公开(公告)号：US08975568B2
公开(公告)日：2015-03-10
申请号：US12805723
申请日：2010-08-17
申请人： Ho-jung Kim , U-in Chung , Jai-kwang Shin , Sun-il Kim , I-hun Song , Chang-jung Kim , Sang-hun Jeon
发明人： Ho-jung Kim , U-in Chung , Jai-kwang Shin , Sun-il Kim , I-hun Song , Chang-jung Kim , Sang-hun Jeon
IPC分类号： H01J27/00 , H04N9/04 , H04N5/3745 , H01L27/146
摘要： Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

17. 发明授权

US08263449B2 Method of manufacturing high electron mobility transistor 有权
标题翻译：制造高电子迁移率晶体管的方法
公开(公告)号：US08263449B2
公开(公告)日：2012-09-11
申请号：US13017361
申请日：2011-01-31
申请人： Ki-ha Hong , U-In Chung , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , In-jun Hwang
发明人： Ki-ha Hong , U-In Chung , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , In-jun Hwang
IPC分类号： H01L21/338
CPC分类号： H01L29/402 , H01L29/0891 , H01L29/66462 , H01L29/7786
摘要： A method of manufacturing a High Electron Mobility Transistor (HEMT) may include forming first and second material layers having different lattice constants on a substrate, forming a source, a drain, and a gate on the second material layer, and changing the second material layer between the gate and the drain into a different material layer, or changing a thickness of the second material layer, or forming a p-type semiconductor layer on the second material layer. The change in the second material layer may occur in an entire region of the second material layer between the gate and the drain, or only in a partial region of the second material layer adjacent to the gate. The p-type semiconductor layer may be formed on an entire top surface of the second material layer between the gate and the drain, or only on a partial region of the top surface adjacent to the gate.
摘要翻译：制造高电子迁移率晶体管（HEMT）的方法可以包括在衬底上形成具有不同晶格常数的第一和第二材料层，在第二材料层上形成源极，漏极和栅极，以及改变第二材料层在栅极和漏极之间形成不同的材料层，或改变第二材料层的厚度，或在第二材料层上形成p型半导体层。第二材料层的变化可以在栅极和漏极之间的第二材料层的整个区域中发生，或者仅在与栅极相邻的第二材料层的部分区域中发生。 p型半导体层可以形成在栅极和漏极之间的第二材料层的整个顶表面上，或者仅形成在与栅极相邻的顶表面的部分区域上。

18. 发明申请

US20120139069A1 STORAGE NODES, MAGNETIC MEMORY DEVICES, AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：存储编号，磁记录装置及其制造方法
公开(公告)号：US20120139069A1
公开(公告)日：2012-06-07
申请号：US13313361
申请日：2011-12-07
申请人： Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
发明人： Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
IPC分类号： H01L29/82 , H01L21/04
CPC分类号： H01L27/228 , G11C11/161 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.
摘要翻译：磁存储器件的存储节点包括：下磁层，形成在下磁层上的隧道势垒层和形成在隧道势垒上的自由磁层。自由磁性层具有响应于自旋电流而可切换的磁化方向。自由磁性层具有围绕形成有自由磁性层的至少一个材料层的盖结构。

19. 发明授权

US07459359B2 Methods of fabricating vertical channel field effect transistors having insulating layers thereon 有权
标题翻译：制造其上具有绝缘层的垂直沟道场效应晶体管的方法
公开(公告)号：US07459359B2
公开(公告)日：2008-12-02
申请号：US11556804
申请日：2006-11-06
申请人： Tai-Su Park , Eui-Joon Yoon , U-In Chung , Si-Young Choi , Jong-Ho Lee
发明人： Tai-Su Park , Eui-Joon Yoon , U-In Chung , Si-Young Choi , Jong-Ho Lee
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/7851 , H01L29/66795 , H01L29/7854
摘要： A method of forming a field effect transistor includes forming a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and forming an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The method may also include forming a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, forming a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and forming a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction.
摘要翻译：形成场效应晶体管的方法包括形成从包括垂直沟道和衬底之间的源极/漏极区域的衬底突出的垂直沟道，并且形成在垂直沟道的侧壁上朝向衬底延伸的绝缘层，超出源/漏区结。该方法还可以包括在侧壁上形成远离衬底延伸到绝缘层的氮化物层，形成在侧壁上延伸的第二绝缘层，所述第二绝缘层通过氮化物层从沟道分离，并形成栅电极在侧壁上朝向衬底延伸超过源/漏区结。

20. 发明申请

US20070134415A1 Oxidation Treatment Apparatus and Method 审中-公开
标题翻译：氧化处理装置及方法
公开(公告)号：US20070134415A1
公开(公告)日：2007-06-14
申请号：US11563980
申请日：2006-11-28
申请人： Ki-Hyun Hwang , U-In Chung , Yu-Gyun Shin , Jae-Young Ahn , Jin-Gyun Kim
发明人： Ki-Hyun Hwang , U-In Chung , Yu-Gyun Shin , Jae-Young Ahn , Jin-Gyun Kim
IPC分类号： C23C16/00 , B05D3/04 , B05D7/00 , B05D1/02
CPC分类号： H01L21/02233 , H01L21/31654
摘要： An oxidation treatment apparatus for oxidizing a surface of a substrate includes a process chamber for performing a process, a boat supporting the substrate and disposed in the process chamber during the process and a first ozone supply unit supplying ozone to the process chamber. The first ozone supply unit includes an ozone generator disposed at an exterior of the process chamber and an ozone spray nozzle disposed in the process chamber to spray the ozone supplied from the ozone generator into the process chamber.
摘要翻译：用于氧化基板表面的氧化处理装置包括处理过程的处理室，支撑基板的船，并且在处理过程中设置在处理室中，以及向处理室供应臭氧的第一臭氧供给单元。第一臭氧供应单元包括设置在处理室外部的臭氧发生器和设置在处理室中的臭氧喷嘴，以将从臭氧发生器供应的臭氧喷射到处理室中。

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