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11. 发明授权

US09111972B2 Substrate processing apparatus and manufacturing method for a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US09111972B2
公开(公告)日：2015-08-18
申请号：US10593282
申请日：2005-06-27
申请人： Mitsunori Takeshita , Tomoyuki Matsuda , Mitsuhiro Hirano , Akihiro Sato , Shinya Morita , Toshimitsu Miyata , Koji Shibata
发明人： Mitsunori Takeshita , Tomoyuki Matsuda , Mitsuhiro Hirano , Akihiro Sato , Shinya Morita , Toshimitsu Miyata , Koji Shibata
IPC分类号： C23C16/44 , H01L21/469 , H01L21/673 , H01L21/677 , C23C16/54 , H01L21/67
CPC分类号： H01L21/67303 , C23C16/4401 , C23C16/54 , H01L21/67196 , H01L21/67201 , H01L21/6773
摘要： The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamber 41 and a transfer chamber 24 respectively provided in order from the rear side within a case 11; and a processing chamber 53 provided above the load lock chamber 41 for processing wafers 1. An opening section 27A, and an opening and closing means 28A for opening and closing the opening section 27A are respectively provided in a location at the rear side of the transfer chamber 24 where the load lock chamber 41 is not arranged.
摘要翻译：维护所需的尺寸减少，占地面积减少。基板处理装置包括分别从壳体11内的后侧设置的负载锁定室41和传送室24; 以及设置在用于处理晶片1的负载锁定室41上方的处理室53.开口部分27A以及用于打开和关闭开口部分27A的打开和关闭装置28A分别设置在转印器后侧的位置不设置负载锁定室41的室24。

12. 发明授权

US07781483B2 Benzopyran compound 有权
标题翻译：苯并吡喃化合物
公开(公告)号：US07781483B2
公开(公告)日：2010-08-24
申请号：US10590207
申请日：2005-02-25
申请人： Toru Tsukagoshi , Takayuki Nagatsuka , Tomoyuki Matsuda , Norio Hashimoto
发明人： Toru Tsukagoshi , Takayuki Nagatsuka , Tomoyuki Matsuda , Norio Hashimoto
IPC分类号： A61K31/353 , C07D311/68 , C07D311/70
CPC分类号： C07D311/68 , C07D311/72
摘要： This invention relates to benzopyran compounds of formula (I) wherein X is NR6, Y is a bond, SO or SO2, Z is C1-4alkyl group or phenyl group, W is hydrogen atom, hydroxy group, C1-6 alkoxy group, a halogen atom, C1-4alkyl group or C1-6alkylsulfonylamino group, R1 and R2 are independently of each other C1-3alkyl group, R3 is hydrogen atom, hydroxy group or methoxy group, m is an integer of 0 to 4, n is an integer of 0 to 4, V is a single bond, CR7R8, NR9, O, S, SO or SO2, R4 is hydrogen atom or C1-6alkyl group, R5 is hydrogen atom, C1-6alkyl group, C3-8cycloalkyl group, C3-8cycloalkenyl group, C6-14aryl group or C2-9heteroaryl group. These compounds are useful as an anti-arrhythmic agent.
摘要翻译：本发明涉及式（I）的苯并吡喃化合物，其中X为NR6，Y为键，SO或SO2，Z为C1-4烷基或苯基，W为氢原子，羟基，C1-6烷氧基，卤素原子，C 1-4烷基或C 1-6烷基磺酰基氨基，R 1和R 2彼此独立地为C 1-3烷基，R 3为氢原子，羟基或甲氧基，m为0〜4的整数，n为整数 0〜4，V为单键，CR7R8，NR9，O，S，SO或SO2，R4为氢原子或C1-6烷基，R5为氢原子，C1-6烷基，C3-8环烷基，C3- 8环烯基，C6-14芳基或C2-9杂芳基。这些化合物可用作抗心律不齐剂。

13. 发明授权

US07652008B2 Tricyclic benzopyran compound as anti-arrhythmic agents 有权
标题翻译：三环苯并吡喃化合物作为抗心律不齐药
公开(公告)号：US07652008B2
公开(公告)日：2010-01-26
申请号：US10590975
申请日：2005-03-23
申请人： Kazuhiko Ohrai , Yukohiro Shigeta , Osamu Uesugi , Takumi Okada , Tomoyuki Matsuda
发明人： Kazuhiko Ohrai , Yukohiro Shigeta , Osamu Uesugi , Takumi Okada , Tomoyuki Matsuda
IPC分类号： A61K31/436 , A61K31/519 , A61K31/4365 , C07D265/38 , C07D491/06 , C07D498/06
CPC分类号： C07D513/04 , C07D491/04 , C07D515/04
摘要： This invention relates to benzopyran derivatives of formula (I) or (II), or pharmaceutically acceptable salts thereof wherein R1 and R2 are independently of each other hydrogen atom, C1-6alkyl group or C6-14aryl group, R3 is hydrogen atom or C1-6alkylcarbonyloxy group, or together with R4 forms a bond, R4 is hydrogen atom, or together with R3 forms a bond, m is an integer of 0 to 4, n is an integer of 0 to 4, V is a single bond, CR7R8, NR9, O, S, SO or SO2, R5 is hydrogen atom or C1-6alkyl group, R6 is hydrogen atom, C1-6alkyl group, C3-8cycloalkyl group, C3-8cycloalkenyl group, amino group, C1-6alkylamino group, di-C1-6alkylamino group, C6-14arylamino group, C2-9heteroarylamino group, C6-14aryl group, C2-9heteroaryl group or C2-9heterocyclyl group, A is 5-, 6- or 7-member ring fused with benzene ring, as constituent atom of the ring, oxygen atom, nitrogen atom or sulfur atom may be contained in the number of 1 to 3 alone or in a combination thereof, the number of unsaturated bond in the ring is 1, 2 or 3 including an unsaturated bond of the benzene ring to be fused, carbon atoms constituting the ring may be carbonyl or thiocarbonyl. These compounds are useful as an anti-arrhythmic agent.
摘要翻译：本发明涉及式（I）或（II）的苯并吡喃衍生物或其药学上可接受的盐，其中R1和R2彼此独立地为氢原子，C1-6烷基或C6-14芳基，R3为氢原子或C1- C 1-6烷基羰基氧基或与R 4一起形成键，R 4是氢原子，或与R 3一起形成键，m是0-4的整数，n是0-4的整数，V是单键，CR7R8， NR9，O，S，SO或SO2，R5是氢原子或C1-6烷基，R6是氢原子，C1-6烷基，C3-8环烷基，C3-8环烯基，氨基，C1-6烷基氨基， C 1-6烷基氨基，C 6-14芳基氨基，C 2-9杂芳基氨基，C 6-14芳基，C 2-9杂芳基或C 2-9杂环基，A是与苯环稠合的5-，6-或7-元环作为构成原子的环，氧原子，氮原子或硫原子可以单独或组合1〜3的数量包含在t中的不饱和键的数量环是1,2或3，包括待稠合的苯环的不饱和键，构成环的碳原子可以是羰基或硫代羰基。这些化合物可用作抗心律不齐剂。

14. 发明申请

US20080236488A1 Substrate Processing Apparatus and Manufacturing Method for a Semiconductor Device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20080236488A1
公开(公告)日：2008-10-02
申请号：US10593282
申请日：2005-06-27
申请人： Mitsunori Takeshita , Tomoyuki Matsuda , Mitsuhiro Hirano , Akihiro Sato , Shinya Morita , Toshimitsu Miyata , Koji Shibata
发明人： Mitsunori Takeshita , Tomoyuki Matsuda , Mitsuhiro Hirano , Akihiro Sato , Shinya Morita , Toshimitsu Miyata , Koji Shibata
IPC分类号： C23C16/44 , H01L21/469
CPC分类号： H01L21/67303 , C23C16/4401 , C23C16/54 , H01L21/67196 , H01L21/67201 , H01L21/6773
摘要： The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamber 41 and a transfer chamber 24 respectively provided in order from the rear side within a case 11; and a processing chamber 53 provided above the load lock chamber 41 for processing wafers 1. An opening section 27A, and an opening and closing means 28A for opening and closing the opening section 27A are respectively provided in a location at the rear side of the transfer chamber 24 where the load lock chamber 41 is not arranged.
摘要翻译：维护所需的尺寸减少，占地面积减少。基板处理装置包括分别从壳体11内的后侧设置的负载锁定室41和传送室24; 以及设置在加载锁定室41上方的用于处理晶片1的处理室53。开口部分27A和用于打开和关闭开口部分27A的打开和关闭装置28A分别设置在不设置负载锁定室41的传送室24的后侧的位置。

15. 发明授权

US08609261B2 Titanium oxide particles, manufacturing method thereof, magnetic memory, and charge storage type memory 有权
标题翻译：氧化钛粒子，其制造方法，磁存储器和电荷存储型存储器
公开(公告)号：US08609261B2
公开(公告)日：2013-12-17
申请号：US13127175
申请日：2009-11-26
申请人： Shin-ichi Ohkoshi , Tomoyuki Matsuda , Yoshihide Tsunobuchi , Kazuhito Hashimoto , Hiroko Tokoro
发明人： Shin-ichi Ohkoshi , Tomoyuki Matsuda , Yoshihide Tsunobuchi , Kazuhito Hashimoto , Hiroko Tokoro
IPC分类号： C01G23/04
CPC分类号： C01G23/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01P2002/72 , C01P2004/04 , C01P2004/64 , G11B5/70626 , G11B2007/24306 , G11B2007/2432 , H01L21/28273 , H01L21/28282 , Y10T428/25 , Y10T428/2982
摘要： There are provided titanium oxide particles capable of manifesting an unprecedented property, a manufacturing method thereof and a magnetic memory as well as a charge storage type memory employing the titanium oxide particles. Unlike-conventional bulk bodies phase-transited between nonmagnetic semiconductors and paramagnetic metals around about 460K, provided are titanium oxide particles 3 capable of manifesting an unprecedented property that Ti3O5 particles do not undergo phase transitions at room temperature and allow a paramagnetic metal property thereof to be consistently maintained in any temperature range.
摘要翻译：提供能够表现出前所未有的性质的氧化钛颗粒，其制造方法和磁存储器以及使用氧化钛颗粒的电荷存储型存储器。不同于在约460K之间在非磁性半导体和顺磁性金属之间相转变的常规体块体，提供了能够表现出Ti3O5颗粒在室温下不经历相变并允许其顺磁金属性质为前提的性能的氧化钛颗粒3 始终保持在任何温度范围内。

16. 发明授权

US08591657B2 Substrate processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08591657B2
公开(公告)日：2013-11-26
申请号：US12548752
申请日：2009-08-27
申请人： Takayuki Nakada , Tomoyuki Matsuda , Shinya Morita
发明人： Takayuki Nakada , Tomoyuki Matsuda , Shinya Morita
IPC分类号： C23C16/00
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/45519 , H01L21/68792
摘要： Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.
摘要翻译：可以抑制金属腐蚀和基材污染，并且可以提高工艺质量和产率。一种基板处理装置，包括：处理室; 衬底保持器; 关闭和打开处理室的盖部分; 衬底支架台; 旋转机构，旋转基板保持台; 插入所述盖部并连接到所述基板保持台和所述旋转机构的旋转轴，使得在其间形成有第一气体喷出口; 由旋转机构，盖部和旋转轴包围的第一气体滞留部; 形成在所述基板保持台上的第二气体喷出口; 第二气体停滞部，形成在所述旋转轴上并且经由所述第二气体喷出口与所述处理室连通; 以及形成在旋转轴处的流动端口，用于连接第一和第二气体停滞部分。

17. 发明授权

US08529701B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08529701B2
公开(公告)日：2013-09-10
申请号：US12537017
申请日：2009-08-06
申请人： Shinya Morita , Takayuki Nakada , Tomoyuki Matsuda , Keisuke Sakashita
发明人： Shinya Morita , Takayuki Nakada , Tomoyuki Matsuda , Keisuke Sakashita
IPC分类号： C23C16/455 , H01L21/306 , C23F1/00 , C23C16/06
CPC分类号： C23C16/4412
摘要： A substrate processing apparatus includes a reaction tube, the reaction tub including an inner tube made of quartz and an outer tube made of quartz; a manifold made of quartz disposed under the outer tube, a top surface of the manifold being in air-tight contact with a bottom surface of the outer tube via a sealing member; a seal cap cover made of quartz disposed under the manifold, a top surface of the seal cap cover being in air-tight contact with a bottom surface of the manifold via a sealing member; a seal cap covered by the seal cap cover, a top surface of the seal cap being in air-tight contact with a bottom surface of the seal cap cover via a sealing member; and at least one protrusion disposed at the bottom surface of one of the outer tube, the manifold, the seal cap cover, and combinations thereof.
摘要翻译：基板处理装置包括反应管，反应槽包括由石英制成的内管和由石英制成的外管; 设置在外管下方的由石英制成的歧管，歧管的顶表面通过密封构件与外管的底表面气密接触; 由石英制成的密封盖盖，设置在歧管下方，密封帽盖的顶表面通过密封件与歧管的底表面气密接触; 由密封帽盖覆盖的密封帽，密封盖的顶表面通过密封构件与密封盖盖的底表面气密接触; 以及设置在所述外管，所述歧管，所述密封盖罩及其组合之一的底表面处的至少一个突起。

18. 发明申请

US20110204278A1 TITANIUM OXIDE PARTICLES, MANUFACTURING METHOD THEREOF, MAGNETIC MEMORY, AND CHARGE STORAGE TYPE MEMORY 有权
标题翻译：氧化钛颗粒，其制造方法，磁记忆和电荷存储类型存储器
公开(公告)号：US20110204278A1
公开(公告)日：2011-08-25
申请号：US13127175
申请日：2009-11-26
申请人： Shin-ichi Ohkoshi , Tomoyuki Matsuda , Yoshihide Tsunobuchi , Kazuhito Hashimoto , Hiroko Tokoro
发明人： Shin-ichi Ohkoshi , Tomoyuki Matsuda , Yoshihide Tsunobuchi , Kazuhito Hashimoto , Hiroko Tokoro
IPC分类号： H01F1/01 , C01G23/04 , B05D5/12 , B82Y30/00
CPC分类号： C01G23/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01P2002/72 , C01P2004/04 , C01P2004/64 , G11B5/70626 , G11B2007/24306 , G11B2007/2432 , H01L21/28273 , H01L21/28282 , Y10T428/25 , Y10T428/2982
摘要： There are provided titanium oxide particles capable of manifesting an unprecedented property, a manufacturing method thereof and a magnetic memory as well as a charge storage type memory employing the titanium oxide particles. Unlike-conventional bulk bodies phase-transited between nonmagnetic semiconductors and paramagnetic metals around about 460K, provided are titanium oxide particles 3 capable of manifesting an unprecedented property that Ti3O5 particles do not undergo phase transitions at room temperature and allow a paramagnetic metal property thereof to be consistently maintained in any temperature range.
摘要翻译：提供能够表现出前所未有的性质的氧化钛颗粒，其制造方法和磁存储器以及使用氧化钛颗粒的电荷存储型存储器。不同于在约460K之间在非磁性半导体和顺磁性金属之间相转变的常规体块体，提供了能够表现出Ti3O5颗粒在室温下不经历相变并允许其顺磁金属性质为前提的性能的氧化钛颗粒3 始终保持在任何温度范围内。

19. 发明申请

US20100055918A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20100055918A1
公开(公告)日：2010-03-04
申请号：US12548752
申请日：2009-08-27
申请人： Takayuki Nakada , Tomoyuki Matsuda , Shinya Morita
发明人： Takayuki Nakada , Tomoyuki Matsuda , Shinya Morita
IPC分类号： H01L21/465
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/45519 , H01L21/68792
摘要： Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.
摘要翻译：可以抑制金属腐蚀和基材污染，并且可以提高工艺质量和产率。一种基板处理装置，包括：处理室; 衬底保持器; 关闭和打开处理室的盖部分; 衬底支架台; 旋转机构，旋转基板保持台; 插入所述盖部并连接到所述基板保持台和所述旋转机构的旋转轴，使得在其间形成有第一气体喷出口; 由旋转机构，盖部和旋转轴包围的第一气体滞留部; 形成在所述基板保持台上的第二气体喷出口; 第二气体停滞部，形成在所述旋转轴上并且经由所述第二气体喷出口与所述处理室连通; 以及形成在旋转轴处的流动端口，用于连接第一和第二气体停滞部分。

20. 发明申请

US20100051597A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20100051597A1
公开(公告)日：2010-03-04
申请号：US12548066
申请日：2009-08-26
申请人： Shinya Morita , Koichi Sada , Takayuki Nakada , Tomoyuki Matsuda
发明人： Shinya Morita , Koichi Sada , Takayuki Nakada , Tomoyuki Matsuda
IPC分类号： H01L21/477 , H05B1/00
CPC分类号： C23C16/4401 , H01L21/67109
摘要： A substrate processing apparatus comprises: an outer tube; a manifold connected to the outer tube and made of a non-metal material; an inner tube disposed in the manifold at a more inner side than the outer tube and configured to process a substrate therein; a heating device installed at a more outer side than the outer tube and configured to heat the inside of the outer tube; a lid configured to open and close an opening of the manifold, with a seal member intervened therebetween; and a heat absorption member installed in the manifold, with a bottom end of the inner tube intervened therebetween, and configured to absorb heat from the heating device, the heat absorption member being made of a non-metal material.
摘要翻译：一种基板处理装置，包括：外管; 连接到外管并由非金属材料制成的歧管; 内管，其设置在所述歧管中比所述外管更内侧并且构造成在其中处理基板; 加热装置，其安装在比所述外管更外侧并且构造成加热所述外管的内部; 盖，其构造成打开和关闭歧管的开口，密封构件插入其间; 以及安装在所述歧管中的吸热构件，所述内管的底端插入其中，并且构造成从所述加热装置吸收热量，所述吸热构件由非金属材料制成。

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