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    • 12. 发明申请
    • METHOD OF MANUFACTURING CAPACITOR
    • 制造电容器的方法
    • US20080072409A1
    • 2008-03-27
    • US11779597
    • 2007-07-18
    • Tomohiko KATOYuko SayaOsamu Shinoura
    • Tomohiko KATOYuko SayaOsamu Shinoura
    • H01G4/008
    • H01G4/005H01G4/33Y10T29/417Y10T29/435
    • One capacitor fabrication process of the invention comprises a noble metal layer formation step of forming a noble metal layer on one surface of a substrate, a dielectric layer formation step of forming a dielectric layer on the noble metal layer, a metal foil formation step of forming a metal foil of 10 μm or greater in thickness on the dielectric layer, a separation step of separating the noble metal layer from the dielectric layer at an interface, and an electrode layer formation step of forming an electrode layer on the second surface of the dielectric layer separated off by the separation step, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil formed thereon. Another capacitor fabrication process of the invention comprises a separation layer formation step of forming a separation layer on one surface of a substrate, a dielectric layer formation step of forming a dielectric layer on the separation layer, a metal foil formation step of forming a metal foil of 10 μm or more in thickness on the dielectric layer, a separation step of separating the substrate from the separation layer at an interface, and an electrode layer formation step of forming an electrode layer on the second surface of the dielectric layer separated off by said separation step via the separation layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil formed thereon. It is thus possible to obtain a thin-film capacitor at low costs and high yields that has an ever higher capacity, is so slimmed down in its entirety that it has a form well fit for being buried in a base board, and can be used even at high frequencies.
    • 本发明的一个电容器制造方法包括在基板的一个表面上形成贵金属层的贵金属层形成步骤,在贵金属层上形成电介质层的介电层形成步骤,形成金属箔的金属箔形成步骤 在电介质层上的厚度为10μm或更大的金属箔,在界面处将贵金属层与电介质层分离的分离步骤和在电介质的第二表面上形成电极层的电极层形成步骤 通过分离步骤分离的层,其中第二表面背面与金属箔形成在介质层的第一表面之间。 本发明的另一种电容器制造方法包括在基板的一个表面上形成分离层的分离层形成步骤,在分离层上形成电介质层的介电层形成步骤,形成金属箔的金属箔形成步骤 在电介质层上具有10μm以上的厚度的分离步骤,在界面处分离衬底与分离层的分离步骤,以及电极层形成步骤,在由所述电介质层分离的电介质层的第二表面上形成电极层 分离步骤,其中所述第二表面背离所述电介质层的所述第一表面,其中形成有所述金属箔。 因此,可以以低成本和高产率获得具有更高容量的薄膜电容器,其整体尺寸如此薄弱,使得其具有适合埋入基板中的形状,并且可以使用 即使在高频。
    • 13. 发明授权
    • Absorption type refrigerating apparatus
    • 吸收式制冷装置
    • US5799502A
    • 1998-09-01
    • US688711
    • 1996-07-31
    • Kazuo NomuraTomohiko KatoTomonori TamuraShigeru Murayama
    • Kazuo NomuraTomohiko KatoTomonori TamuraShigeru Murayama
    • F25B15/02F25B29/00F25B37/00
    • F25B37/00F25B15/02F25B29/006F25B2315/002F25B2315/006Y02B30/62
    • An absorption type refrigerating apparatus which has a high performance coefficient as an entire apparatus by improving the cooling capacities of the condensation function portion and the absorption function portion and can be reduced in size is constituted such that the cooling function portion 1 for cooling the absorption function portion (absorber) 1 by means of the first heat operation fluid (cooling water) 35a is divided into a plurality of sub-portions such as the cooling pipe 201A, cooling pipe 201H and absorption/heat exchanger 234, the flow passages of the first heat operation fluid 35a are connected to these cooling function sub-portions 201A, 201H and 234 in parallel/series like a route formed by the pipe lines 20, 20A, 20D and 21 and a route formed by the pipe lines 20, 20B, 20C and 21, and the cooling capacity of the cooling pipe 201H is increased by forming a continuous irregular surface 1C on the inner wall of the outer shell 1A of the absorber 1. The above apparatus may be modified such that the cooling pipe 201H is provided inside the absorber 1 and a cooling pipe is replaced for the absorption/heat exchanger 234 and installed inside the absorber 1.
    • 通过改善冷凝功能部分和吸收功能部分的冷却能力并可以减小尺寸的具有作为整个装置的整个装置的高性能系数的吸收式制冷装置被构成为使得用于冷却吸收功能的冷却功能部分1 通过第一热作用流体(冷却水)35a的部分(吸收体)1被分成多个子部分,例如冷却管201A,冷却管201H和吸收/热交换器234,第一 热作业流体35a与管路20,20A,20D,21D所形成的路径并行/串联连接到这些冷却功能子部201A,201H,234以及由管路20,20B,20C形成的路径 并且冷却管201H的冷却能力通过在吸收器1的外壳1A的内壁上形成连续的不规则表面1C来增加。上述装置可以 将冷却管201H设置在吸收体1的内部,冷却管更换为吸收/热交换器234并安装在吸收体1的内部。
    • 19. 发明申请
    • LIQUID LEVEL DETECTION APPARATUS
    • 液位检测装置
    • US20110290014A1
    • 2011-12-01
    • US13077185
    • 2011-03-31
    • Tomohiko KATODaisuke Osaki
    • Tomohiko KATODaisuke Osaki
    • G01F23/00
    • F01P11/18G05D9/12
    • A liquid level detection apparatus detecting a liquid level of a coolant stored in a coolant tank for an internal combustion engine, includes first and second electrodes immersed in the coolant and electrically connected to each other via the coolant when the liquid level of the coolant is higher than a predetermined position, a transmitter generating a sine wave including a specific frequency and equal amplitudes at positive and negative frequencies, the specific frequency being below a predetermined frequency, the transmitter sending the sine wave to one of the first and second electrodes, and a receiver including a band-pass filter receiving the sine wave outputted from the transmitter, via the other of the first and second electrodes to allow passage of the sine wave having the specific frequency, and a determination portion determining the liquid level of the coolant in accordance with the sine wave passed through the band-pass filter.
    • 液面检测装置,其检测存储在用于内燃机的冷却剂罐中的冷却剂的液面的液面,包括浸入冷却剂中的第一和第二电极,当冷却剂的液位高时,通过冷却剂彼此电连接 发送器将正弦波发送到第一和第二电极之一,发送器将正弦波发送到第一和第二电极之一,该正弦波包括特定频率和正和负频率处的相等幅度,该特定频率低于预定频率, 接收机,其包括经由所述第一和第二电极中的另一个接收从所述发射器输出的正弦波的带通滤波器,以允许具有所述特定频率的正弦波的通过;以及确定部分,其根据所述确定部分确定所述冷却剂的液面 正弦波通过带通滤波器。